Miranda-Durán A, Cartoixà X, Cruz Irisson M, Rurali R. Molecular doping and subsurface dopant reactivation in si nanowires.
NANO LETTERS 2010;
10:3590-3595. [PMID:
20734978 DOI:
10.1021/nl101894q]
[Citation(s) in RCA: 7] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Abstract
Impurity doping in semiconductor nanowires, while increasingly well understood, is not yet controllable at a satisfactory degree. The large surface-to-volume area of these systems, however, suggests that adsorption of the appropriate molecular complexes on the wire sidewalls could be a viable alternative to conventional impurity doping. We perform first-principles electronic structure calculations to assess the possibility of n- and p-type doping of Si nanowires by exposure to NH(3) and NO(2). Besides providing a full rationalization of the experimental results recently obtained in mesoporous Si, our calculations show that while NH(3) is a shallow donor, NO(2) yields p-doping only when passive surface segregated B atoms are present.
Collapse