Optical properties of vacancy related defects in diamond

A route to hierarchical assembly of colloidal diamond

Photonic crystals, appealing for their ability to control light, are constructed from periodic regions of different dielectric constants. Yet, the structural holy grail in photonic materials, diamond, remains challenging to synthesize at the colloidal length scale. Here we explore new ways to assemble diamond using modified gyrobifastigial (mGBF) nanoparticles, a shape that resembles two anti-aligned triangular prisms. We investigate the parameter space that leads to the self-assembly of diamond, and we compare the likelihood of defects in diamond self-assembled via mGBF vs. the nanoparticle shape that is the current focus for assembling diamond, the truncated tetrahedra. We introduce a potential route for realizing mGBF particles by dimerizing triangular prisms using attractive patches, and we report the impact of this superstructure on the photonic properties.

Luminescence lifetimes of neutral nitrogen-vacancy centres in synthetic diamond containing nitrogen

The decay time of luminescence from neutral nitrogen-vacancy (NV(0)) centres in synthetic diamond is reported. The intrinsic luminescence lifetime of NV (0) is measured as τ(r) = 19 ± 2 ns. Neutral substitutional nitrogen atoms (N(S)(0)) are shown to quench luminescence from NV(0) by dipole-dipole resonant energy transfer at a rate such that the transfer time would equal τ(r) if one (N(S)(0)) atom was ~3 nm from the NV(0). In chemical-vapour-deposited diamonds grown with a small nitrogen content, that are brown as a result of vacancy-cluster defects, the decay time of NV(0) equals τ(r) in the as-grown material. However, after annealing at ≥1700 °C to remove the brown colour, luminescence from the NV(0) centres is severely quenched. This effect is suggested to be a result of the destruction of NV(0) centres and the creation of new NV(0) centres localized in vacancy-rich regions of the crystals.

Spin S = 1 centers: a universal type of paramagnetic defects in nanodiamonds of dynamic synthesis

Intrinsic paramagnetic defects in ∼5 nm sized nanodiamonds, produced by various dynamic synthesis (DySND) techniques (detonation, shock-wave, pulsed laser ablation of solid carbon containing targets), have been studied by multi-frequency electron paramagnetic resonance (EPR). X-band (9-10 GHz) EPR spectra of DySND, in addition to the main intensive singlet Lorentzian-like EPR signal, reveal a low intensity doublet pattern within the half-field (HF) region (g ∼ 4). On transferring spectra to the Q-band (34 GHz) the shape of the HF pattern changes and splitting between doublet components is reduced from 10.4 to 2.6 mT. The HF patterns observed are attributed to the 'forbidden' ΔM(S) = 2 transitions between the Zeeman levels of some spin-triplet (S = 1) centers. The model of two triplet centers with g ∼ 2.003 and zero-field splitting parameters D(1) = 0.095 cm(-1) (TR1) and D(2) = 0.030 cm(-1) (TR2) satisfactorily describes experimental results at both microwave frequencies. The spin-triplet-type defects are observed in a wide variety of DySND samples irrespective of industrial supplier, cooling and carbon soot refinement methods, initial purity, disintegration, or subsequent targeted chemical modification. This indicates that the intrinsic defects with S = 1 in DySND systems are of universal origin.

Vacancy clusters, dislocations and brown colouration in diamond

Following on from the idea that clusters of vacancies are the origin of the featureless absorption and brown colouration in natural diamond, dislocations are shown to exhibit sub-bandgap absorption also. The vacancy cluster idea has arisen from theoretical predictions of π-bonded chains reconstructing the cluster surfaces and has been confirmed by energy loss studies. In contrast, bandgap states at dislocations are observed in brown and colourless diamonds alike, giving rise to weak absorption, which resembles that theoretically predicted from shuffle dislocation segments. This, however, would not account for the degrees of brownness in the diamonds, but it suggests that if such shuffle segments exist, vacancies must have been present and moved to dislocations to create these configurations in the first place. The question arises, what happens to the vast number of vacancy clusters upon high pressure high temperature (HPHT) annealing, which renders the diamonds colourless. Our observations on natural brown diamonds after HPHT treatment suggest that vacancy clusters, trapped in the strain fields of dislocations, grow in size accompanied by a decrease in their numbers; this leads to much reduced optical absorption.

Brown colour in natural diamond and interaction between the brown related and other colour-inducing defects

Absorption spectroscopy results on a range of type II diamonds are presented which enable the electronic states associated with them to be mapped out. High pressure, high temperature treatment of brown type IIa diamonds has enabled an activation energy for the removal of the brown colour of 8.0 ± 0.3 eV to be determined and this is consistent with expectations associated with the currently accepted vacancy cluster model for the defect. Theoretical calculations suggest that this defect will generate partially filled gap states about 1 eV above the valence band. Data on the photochromic behaviour of bands producing pink colour and their relation to brown colour are presented; these suggest that the pink bands are produced from two independent transitions with ground states close to each other just below the middle of the band gap. Compensation of neutral boron by charge transfer from states associated with brown colour is demonstrated via the correlated increase in neutral boron and decrease in brown colour on high pressure, high temperature treatment to remove the defects causing the brown colour.

Defects in electron irradiated boron-doped diamonds investigated by positron annihilation and optical absorption

Synthetic boron-doped single-crystal diamonds were irradiated by a pulsed electron beam at 2.2 MeV to various accumulated fluences from 0.7 × 10(18) to 10 × 10(18) e(-) cm(-2). The samples were then subjected to isochronal annealing up to 1260 °C and characterized by positron annihilation (PA) and optical absorption (OA) spectroscopies after each annealing step. PA combined with in situ monochromatic illumination gave an estimate for the positive/neutral energy level in the band gap for the monovacancy as ∼0.6 eV above the valence band-edge. From the analysis of PA and OA results, a dominant OA line at 0.552 eV was associated with a neutral boron-interstitial complex, and the annealing temperature of the positive monovacancy was deduced as ∼700 °C.