Lin YT, Shi JB, Chen YC, Chen CJ, Wu PF. Synthesis and Characterization of Tin Disulfide (SnS(2)) Nanowires.
NANOSCALE RESEARCH LETTERS 2009;
4:694-698. [PMID:
20596366 PMCID:
PMC2894233 DOI:
10.1007/s11671-009-9299-5]
[Citation(s) in RCA: 23] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2008] [Accepted: 03/24/2009] [Indexed: 05/28/2023]
Abstract
The ordered tin disulfide (SnS(2)) nanowire arrays were first fabricated by sulfurizing the Sn nanowires, which are embedded in the nanochannels of anodic aluminum oxide (AAO) template. SnS(2) nanowire arrays are highly ordered and highly dense. X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrate the SnS(2) nanowire is hexagonal polycrystalline. The study of UV/Visible/NIR absorption shows the SnS(2) nanowire is a wide-band semiconductor with three band gap energies (3.3, 4.4, and 5.8 eV).
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