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For: Dannefaer S. Defects and Oxygen in Silicon Studied by Positrons. ACTA ACUST UNITED AC 1987. [DOI: 10.1002/pssa.2211020203] [Citation(s) in RCA: 92] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Number Cited by Other Article(s)
1
Murakami H, Ohtsu Y, Ichikawa K, Sano M, Jin C, Yonehara Y, Ichimura K. Positron annihilation in hydrogen-doped alkali-metal fullerides. RADIOCHIM ACTA 2009. [DOI: 10.1524/ract.2001.89.1.051] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
2
Grafutin VI, Zaluzhnyi AG, Kalugin VV, Ilyukhina OV, Myasishcheva GG, Prokop’ev EP, Timoshenkov SP, Funtikov YV, Khmelevskii NO. On the feasibility of investigation of some defect and porous systems by means of positron annihilation spectroscopy. HIGH ENERGY CHEMISTRY 2008. [DOI: 10.1134/s0018143908060118] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
3
Knights AP, Carlow GR, Zinke-Allmang M, Simpson PJ. Defect evolution in Co-implanted Si during annealing at 1000 degreesC studied using variable-energy positrons and Rutherford backscattering. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;54:13955-13961. [PMID: 9985314 DOI: 10.1103/physrevb.54.13955] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
4
Brauer G, Anwand W, Coleman PG, Knights AP, Plazaola F, Pacaud Y, Skorupa W, Störmer J, Willutzki P. Positron studies of defects in ion-implanted SiC. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;54:3084-3092. [PMID: 9986206 DOI: 10.1103/physrevb.54.3084] [Citation(s) in RCA: 36] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
5
Fujinami M. Oxygen-related defects in Si studied by variable-energy positron annihilation spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:13047-13050. [PMID: 9982983 DOI: 10.1103/physrevb.53.13047] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
6
Dannefaer S, Craigen D, Kerr D. Carbon and silicon vacancies in electron-irradiated 6H-SiC. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;51:1928-1930. [PMID: 9978918 DOI: 10.1103/physrevb.51.1928] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
7
Brusa RS, Zecca A, Nobili C, Ottaviani G, Tonini R, Dupasquier A. Vacancy-hydrogen interaction in H-implanted Si studied by positron annihilation. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;49:7271-7280. [PMID: 10009465 DOI: 10.1103/physrevb.49.7271] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
8
Smith CD, Rice-Evans P, Shaw N. Observation of vacancy charge states in Cd0.2Hg0.8Te by positron annihilation. PHYSICAL REVIEW LETTERS 1994;72:1108-1111. [PMID: 10056619 DOI: 10.1103/physrevlett.72.1108] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
9
Krause-Rehberg R, Brohl M, Leipner HS, Drost T, Polity A, Beyer U, Alexander H. Defects in plastically deformed semiconductors studied by positron annihilation: Silicon and germanium. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;47:13266-13276. [PMID: 10005631 DOI: 10.1103/physrevb.47.13266] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
10
Simpson PJ, Vos M, Mitchell IV, Wu C, Schultz PJ. Ion-beam-induced damage in silicon studied using variable-energy positrons, Rutherford backscattering, and infrared absorption. PHYSICAL REVIEW. B, CONDENSED MATTER 1991;44:12180-12188. [PMID: 9999374 DOI: 10.1103/physrevb.44.12180] [Citation(s) in RCA: 25] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
11
Saito M, Oshiyama A, Tanigawa S. Anisotropic momentum distribution of positron-annihilation radiation in semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1991;44:10601-10609. [PMID: 9999085 DOI: 10.1103/physrevb.44.10601] [Citation(s) in RCA: 23] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
12
Xu H. Electronic structure of the isolated vacancies and divacancy in InP. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;42:11295-11302. [PMID: 9995417 DOI: 10.1103/physrevb.42.11295] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
13
Mäkinen J, Corbel C, Hautojärvi P, Vehanen A, Mathiot D. Positron mobility in Si at 300 K. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;42:1750-1758. [PMID: 9995607 DOI: 10.1103/physrevb.42.1750] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
14
Puska MJ, Corbel C, Nieminen RM. Positron trapping in semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;41:9980-9993. [PMID: 9993382 DOI: 10.1103/physrevb.41.9980] [Citation(s) in RCA: 96] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
15
Mäkinen S, Puska MJ. Positron states at vacancy-impurity pairs in semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;40:12523-12526. [PMID: 9991893 DOI: 10.1103/physrevb.40.12523] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
16
Mascher P, Dannefaer S, Kerr D. Positron trapping rates and their temperature dependencies in electron-irradiated silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;40:11764-11771. [PMID: 9991781 DOI: 10.1103/physrevb.40.11764] [Citation(s) in RCA: 57] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
17
Mäkinen J, Corbel C, Hautojärvi P, Moser P, Pierre F. Positron trapping at vacancies in electron-irradiated Si at low temperatures. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;39:10162-10173. [PMID: 9947795 DOI: 10.1103/physrevb.39.10162] [Citation(s) in RCA: 39] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
18
Puska MJ, Mäkinen S, Manninen M, Nieminen RM. Screening of positrons in semiconductors and insulators. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;39:7666-7679. [PMID: 9947448 DOI: 10.1103/physrevb.39.7666] [Citation(s) in RCA: 99] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
19
Puska MJ, Corbel C. Positron states in Si and GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1988;38:9874-9880. [PMID: 9945810 DOI: 10.1103/physrevb.38.9874] [Citation(s) in RCA: 52] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
20
Corbel C, Stucky M, Hautojärvi P, Saarinen K, Moser P. Positron-annihilation spectroscopy of native vacancies in as-grown GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1988;38:8192-8208. [PMID: 9945571 DOI: 10.1103/physrevb.38.8192] [Citation(s) in RCA: 57] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
21
Schultz PJ, Tandberg E, Lynn KG, Nielsen B, Jackman TE, Denhoff MW, Aers GC. Defects and impurities at the Si/Si(100) interface studied with monoenergetic positrons. PHYSICAL REVIEW LETTERS 1988;61:187-190. [PMID: 10039055 DOI: 10.1103/physrevlett.61.187] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
22
Dlubek G, Krause R. Positron Studies of Defects in III–V Semiconductor Compounds. ACTA ACUST UNITED AC 1987. [DOI: 10.1002/pssa.2211020202] [Citation(s) in RCA: 110] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
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