Leite MS, Warmann EC, Kimball GM, Burgos SP, Callahan DM, Atwater HA. Wafer-scale strain engineering of ultrathin semiconductor crystalline layers.
ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2011;
23:3801-3807. [PMID:
21769949 DOI:
10.1002/adma.201101309]
[Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2011] [Revised: 06/10/2011] [Indexed: 05/31/2023]
Abstract
The fabrication of a wafer-scale dislocation-free, fully relaxed single crystalline template for epitaxial growth is demonstrated. Transferring biaxially-strained Inx Ga1-x As ultrathin films from InP substrates to a handle support results in full strain relaxation and the Inx Ga1-x As unit cell assumes its bulk value. Our realization demonstrates the ability to control the lattice parameter and energy band structure of single layer crystalline compound semiconductors in an unprecedented way.
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