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Wang L, Xu S, Yang J, Huang H, Huo Z, Li J, Xu X, Ren F, He Y, Ma Y, Zhang W, Xiao X. Recent Progress in Solar-Blind Photodetectors Based on Ultrawide Bandgap Semiconductors. ACS OMEGA 2024; 9:25429-25447. [PMID: 38911814 PMCID: PMC11191133 DOI: 10.1021/acsomega.4c02897] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/26/2024] [Revised: 05/17/2024] [Accepted: 05/28/2024] [Indexed: 06/25/2024]
Abstract
Ultrawide bandgap (UWBG) semiconductors, including Ga2O3, diamond, Al x Ga1-x N/AlN, featuring bandgaps greater than 4.4 eV, hold significant promise for solar-blind ultraviolet photodetection, with applications spanning in environmental monitoring, chemical/biological analysis, industrial processes, and military technologies. Over recent decades, substantial strides in synthesizing high-quality UWBG semiconductors have facilitated the development of diverse high-performance solar-blind photodetectors (SBPDs). This review comprehensively examines recent advancements in UWBG semiconductor-based SBPDs across various device architectures, encompassing photoconductors, metal-semiconductor-metal photodetectors, Schottky photodiodes, p-n (p-i-n) photodiodes, phototransistors, etc., with a systematic introduction and discussion of their operational principles. The current state of device performance for SBPDs employing these UWBG semiconductors is evaluated across different device configurations. Finally, this review outlines key challenges to be addressed, aiming to steer future research endeavors in this critical domain.
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Affiliation(s)
- Lixia Wang
- School
of Future Technology, Henan Key Laboratory of Quantum Materials and
Quantum Energy, Henan University, Zhengzhou 450046, P. R. China
- School
of Physical Science and Technology and Key Laboratory of Artificial
Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, P. R. China
| | - Shengming Xu
- School
of Future Technology, Henan Key Laboratory of Quantum Materials and
Quantum Energy, Henan University, Zhengzhou 450046, P. R. China
| | - Jiangang Yang
- School
of Physical Science and Technology and Key Laboratory of Artificial
Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, P. R. China
| | - Hui Huang
- School
of Physical Science and Technology and Key Laboratory of Artificial
Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, P. R. China
- School
of Materials Science & Engineering, Hubei University, Wuhan 430062, P. R. China
| | - Zhe Huo
- School
of Future Technology, Henan Key Laboratory of Quantum Materials and
Quantum Energy, Henan University, Zhengzhou 450046, P. R. China
- Key
Laboratory of Bio-inspired Smart Interfacial Science and Technology
of Ministry of Education, School of Chemistry, Beihang University, Beijing 100191, P. R. China
| | - Jing Li
- Key
Laboratory of Bio-inspired Smart Interfacial Science and Technology
of Ministry of Education, School of Chemistry, Beihang University, Beijing 100191, P. R. China
| | - Xin Xu
- School
of Physical Science and Technology and Key Laboratory of Artificial
Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, P. R. China
- State
Key Lab of Optoelectronic Materials and Technologies, Guangdong Province
Key Laboratory of Display Material and Technology and School of Electronics
and Information Technology, Sun Yat-sen
University, Guangzhou 510275, P. R. China
| | - Feng Ren
- School
of Physical Science and Technology and Key Laboratory of Artificial
Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, P. R. China
| | - Yunbin He
- School
of Materials Science & Engineering, Hubei University, Wuhan 430062, P. R. China
| | - Yaping Ma
- School
of Future Technology, Henan Key Laboratory of Quantum Materials and
Quantum Energy, Henan University, Zhengzhou 450046, P. R. China
- School
of Physical Science and Technology and Key Laboratory of Artificial
Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, P. R. China
- Institute
of Quantum Materials and Physics, Henan
Academy of Sciences, Zhengzhou 450046, P. R. China
| | - Weifeng Zhang
- School
of Future Technology, Henan Key Laboratory of Quantum Materials and
Quantum Energy, Henan University, Zhengzhou 450046, P. R. China
- Institute
of Quantum Materials and Physics, Henan
Academy of Sciences, Zhengzhou 450046, P. R. China
| | - Xudong Xiao
- School
of Future Technology, Henan Key Laboratory of Quantum Materials and
Quantum Energy, Henan University, Zhengzhou 450046, P. R. China
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Cai Q, You H, Guo H, Wang J, Liu B, Xie Z, Chen D, Lu H, Zheng Y, Zhang R. Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays. LIGHT, SCIENCE & APPLICATIONS 2021; 10:94. [PMID: 33931580 PMCID: PMC8087770 DOI: 10.1038/s41377-021-00527-4] [Citation(s) in RCA: 53] [Impact Index Per Article: 17.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2020] [Revised: 03/30/2021] [Accepted: 03/31/2021] [Indexed: 05/22/2023]
Abstract
Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. As a representative III-nitride material, AlGaN alloys have broad development prospects in the field of solar-blind detection due to their superior properties, such as tunable wide bandgaps for intrinsic UV detection. In recent decades, a variety of AlGaN-based PDs have been developed to achieve high-precision solar-blind UV detection. As integrated optoelectronic technology advances, AlGaN-based focal plane arrays (FPAs) are manufactured and exhibit outstanding solar-blind imaging capability. Considering the rapid development of AlGaN detection techniques, this paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and FPAs. First, the basic physical properties of AlGaN are presented. The epitaxy and p-type doping problems of AlGaN alloys are then discussed. Diverse PDs, including photoconductors and Schottky, metal-semiconductor-metal (MSM), p-i-n, and avalanche photodiodes (APDs), are demonstrated, and the physical mechanisms are analyzed to improve device performance. Additionally, this paper summarizes imaging technologies used with AlGaN FPAs in recent years. Benefiting from the development of AlGaN materials and optoelectronic devices, solar-blind UV detection technology is greeted with significant revolutions. Summarizing recent advances in the processing and properties of AlGaN-based solar-blind UV PDs and FPAs as well as AlGaN growth and doping techniques.
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Affiliation(s)
- Qing Cai
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Haifan You
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Hui Guo
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Jin Wang
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Bin Liu
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Zili Xie
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Dunjun Chen
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Hai Lu
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Youdou Zheng
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
| | - Rong Zhang
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
- Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, 361005, China.
- Institute of Future Display Technology, Tan Kah Kee Innovation Laboratory, Xiamen, 361102, China.
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