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Chen X, Mu W, Xu Y, Fu B, Jia Z, Ren FF, Gu S, Zhang R, Zheng Y, Tao X, Ye J. Highly Narrow-Band Polarization-Sensitive Solar-Blind Photodetectors Based on β-Ga 2O 3 Single Crystals. ACS APPLIED MATERIALS & INTERFACES 2019; 11:7131-7137. [PMID: 30676013 DOI: 10.1021/acsami.8b19524] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
To suppress noise from full daylight background or environmental radiation, a spectrally selective solar-blind photodetector is widely required in many applications that need detection of light within a specific spectral range. Here, we present highly narrow-band solar-blind photodetectors by light polarization engineering of the anisotropic transitions in β-Ga2O3 single crystals. The polarized transmittance characteristics reveal that direct transitions from valance subbands to the conduction band minimum are tuned between 4.53 and 4.76 eV for the light polarized E// c and E// b. The polarization-dependent photoresponsivity verifies that the order of fundamental band-to-band transitions obeys well the selection rules in terms of the valence-band splitting in the β-Ga2O3 monoclinic crystal band structure. By combining an orthogonally aligned identical β-Ga2O3 (100) single crystal filter with a detector measured at a chopper frequency of 17 Hz, a highly narrow-band detection is produced with a peak responsivity of 0.23 A/W at 262 nm, an EQE of 110%, a bandwidth of 10 nm, a light rejection ratio over 800, and a response time of 0.86 ms. This provides a new paradigm for a narrow-band solar-blind photodetector with broad applications where background noise emission needs to be suppressed.
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Affiliation(s)
- Xuanhu Chen
- School of Electronic Science and Engineering , Nanjing University , Nanjing 210023 , China
- Research Institute of Shenzhen , Nanjing University , Shenzhen 518057 , China
| | - Wenxiang Mu
- State Key Laboratory of Crystal Materials and the Key Laboratory of Functional Crystal Materials and Device , Shandong University , Jinan 250100 , China
| | - Yang Xu
- School of Electronic Science and Engineering , Nanjing University , Nanjing 210023 , China
| | - Bo Fu
- State Key Laboratory of Crystal Materials and the Key Laboratory of Functional Crystal Materials and Device , Shandong University , Jinan 250100 , China
| | - Zhitai Jia
- State Key Laboratory of Crystal Materials and the Key Laboratory of Functional Crystal Materials and Device , Shandong University , Jinan 250100 , China
| | - Fang-Fang Ren
- School of Electronic Science and Engineering , Nanjing University , Nanjing 210023 , China
| | - Shulin Gu
- School of Electronic Science and Engineering , Nanjing University , Nanjing 210023 , China
| | - Rong Zhang
- School of Electronic Science and Engineering , Nanjing University , Nanjing 210023 , China
| | - Youdou Zheng
- School of Electronic Science and Engineering , Nanjing University , Nanjing 210023 , China
| | - Xutang Tao
- State Key Laboratory of Crystal Materials and the Key Laboratory of Functional Crystal Materials and Device , Shandong University , Jinan 250100 , China
| | - Jiandong Ye
- School of Electronic Science and Engineering , Nanjing University , Nanjing 210023 , China
- Research Institute of Shenzhen , Nanjing University , Shenzhen 518057 , China
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