Native point defects at ZnO surfaces, interfaces and bulk films

ZnO Transducers for Photoluminescence-Based Biosensors: A Review

Zinc oxide (ZnO) is a wide bandgap semiconductor material that has been widely explored for countless applications, including in biosensing. Among its interesting properties, its remarkable photoluminescence (PL), which typically exhibits an intense signal at room temperature (RT), arises as an extremely appealing alternative transduction approach due to the high sensitivity of its surface properties, providing high sensitivity and selectivity to the sensors relying on luminescence output. Therefore, even though not widely explored, in recent years some studies have been devoted to the use of the PL features of ZnO as an optical transducer for detection and quantification of specific analytes. Hence, in the present paper, we revised the works that have been published in the last few years concerning the use of ZnO nanostructures as the transducer element in different types of PL-based biosensors, namely enzymatic and immunosensors, towards the detection of analytes relevant for health and environment, like antibiotics, glucose, bacteria, virus or even tumor biomarkers. A comprehensive discussion on the possible physical mechanisms that rule the optical sensing response is also provided, as well as a warning regarding the effect that the buffer solution may play on the sensing experiments, as it was seen that the use of phosphate-containing solutions significantly affects the stability of the ZnO nanostructures, which may conduct to misleading interpretations of the sensing results and unreliable conclusions.

ZnO decorated laser-induced graphene produced by direct laser scribing

A scalable laser scribing approach to produce zinc oxide (ZnO) decorated laser-induced graphene (LIG) in a unique laser-processing step was developed by irradiating a polyimide sheet covered with a Zn/ZnO precursor with a CO₂ laser (10.6 μm) under ambient conditions. The laser scribing parameters revealed a strong impact on the surface morphology of the formed LIG, on ZnO microparticles' formation and distribution, as well as on the physical properties of the fashioned composites. The ZnO microparticles were seen to be randomly distributed along the LIG surface, with the amount and dimensions depending on the used laser processing conditions. Besides the synthesis conditions, the use of different precursors also resulted in distinct ZnO growth's yields and morphologies. Raman spectroscopy revealed the existence of both wurtzite-ZnO and sp² carbon in the majority of the produced samples. Broad emission bands in the visible range and the typical ZnO near band edge (NBE) emission were detected by photoluminescence studies. The spectral shape of the luminescence signal was seen to be extremely sensitive to the employed processing parameters and precursors, highlighting their influence on the composites' optical defect distribution. The sample produced from the ZnO-based precursor evidenced the highest luminescence signal, with a dominant NBE recombination. Electrochemical measurements pointed to the existence of charge transfer processes between LIG and the ZnO particles.

Spectroscopy and control of near-surface defects in conductive thin film ZnO

The electronic structure of inorganic semiconductor interfaces functionalized with extended π-conjugated organic molecules can be strongly influenced by localized gap states or point defects, often present at low concentrations and hard to identify spectroscopically. At the same time, in transparent conductive oxides such as ZnO, the presence of these gap states conveys the desirable high conductivity necessary for function as electron-selective interlayer or electron collection electrode in organic optoelectronic devices. Here, we report on the direct spectroscopic detection of a donor state within the band gap of highly conductive zinc oxide by two-photon photoemission spectroscopy. We show that adsorption of the prototypical organic acceptor C60 quenches this state by ground-state charge transfer, with immediate consequences on the interfacial energy level alignment. Comparison with computational results suggests the identity of the gap state as a near-surface-confined oxygen vacancy.

Enhanced wetting of Cu on ZnO by migration of subsurface oxygen vacancies

Metal adhesion on metal oxides is strongly controlled by the oxide surface structure and composition, but lack of control over the surface conditions often limits the possibilities to exploit this in opto- and micro-electronics applications and heterogeneous catalysis where nanostructural control is of utmost importance. The Cu/ZnO system is among the most investigated of such systems in model studies, but the presence of subsurface ZnO defects and their important role for adhesion on ZnO have been unappreciated so far. Here we reveal that the surface-directed migration of subsurface defects affects the Cu adhesion on polar ZnO(0001) in the technologically interesting temperature range up to 550 K. This leads to enhanced adhesion and ultimately complete wetting of ZnO(0001) by a Cu overlayer. On the basis of our experimental and computational results we demonstrate a mechanism which implies that defect concentrations in the bulk are an important, and possibly controllable, parameter for the metal-on-oxide growth.

Comprehensive elucidation of metal-support interactions is important for controlling and improving their performances in a range of pertinent technologies. Here, the authors reveal how subsurface defects influence the adhesion and wetting of a metal on the surface of a metal oxide.

Defect-driven interfacial electronic structures at an organic/metal-oxide semiconductor heterojunction

The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties.