1
|
Jiang C, Jing L, Huang X, Liu M, Du C, Liu T, Pu X, Hu W, Wang ZL. Enhanced Solar Cell Conversion Efficiency of InGaN/GaN Multiple Quantum Wells by Piezo-Phototronic Effect. ACS NANO 2017; 11:9405-9412. [PMID: 28872837 DOI: 10.1021/acsnano.7b04935] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The piezo-phototronic effect is the tuning of piezoelectric polarization charges at the interface to largely enhance the efficiency of optoelectronic processes related to carrier separation or recombination. Here, we demonstrated the enhanced short-circuit current density and the conversion efficiency of InGaN/GaN multiple quantum well solar cells with an external stress applied on the device. The external-stress-induced piezoelectric charges generated at the interfaces of InGaN and GaN compensate the piezoelectric charges induced by lattice mismatch stress in the InGaN wells. The energy band realignment is calculated with a self-consistent numerical model to clarify the enhancement mechanism of optical-generated carriers. This research not only theoretically and experimentally proves the piezo-phototronic effect modulated the quantum photovoltaic device but also provides a great promise to maximize the use of solar energy in the current energy revolution.
Collapse
Affiliation(s)
- Chunyan Jiang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology (NCNST) , Beijing 100190, China
- University of Chinese Academy of Sciences , Beijing 100049, China
| | - Liang Jing
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology (NCNST) , Beijing 100190, China
- University of Chinese Academy of Sciences , Beijing 100049, China
| | - Xin Huang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology (NCNST) , Beijing 100190, China
- University of Chinese Academy of Sciences , Beijing 100049, China
| | - Mengmeng Liu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology (NCNST) , Beijing 100190, China
- University of Chinese Academy of Sciences , Beijing 100049, China
| | - Chunhua Du
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology (NCNST) , Beijing 100190, China
| | - Ting Liu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology (NCNST) , Beijing 100190, China
- University of Chinese Academy of Sciences , Beijing 100049, China
| | - Xiong Pu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology (NCNST) , Beijing 100190, China
| | - Weiguo Hu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology (NCNST) , Beijing 100190, China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology (NCNST) , Beijing 100190, China
- School of Material Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332, United States
| |
Collapse
|