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Dae KS, Jang KS, Choi CM, Jang JH. Spatially Resolved Functional Group Analysis of OLED Materials Using EELS and ToF-SIMS. Anal Chem 2024; 96:12616-12621. [PMID: 38967042 PMCID: PMC11307249 DOI: 10.1021/acs.analchem.4c00742] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/06/2024] [Revised: 05/24/2024] [Accepted: 06/13/2024] [Indexed: 07/06/2024]
Abstract
Electron energy-loss spectroscopy (EELS) is widely used in analyzing the electronic structure of inorganic materials at high spatial resolution. In this study, we use a monochromator to improve the energy resolution, allowing us to analyze the electronic structure of organic light-emitting diode (OLED) materials with greater precision. This study demonstrates the use of the energy-loss near-edge structure to map the nitrogen content of organic molecules and identify the distinct bonding characteristics of aromatic carbon and pyridinic nitrogen. Furthermore, we integrate EELS with time-of-flight secondary ion mass spectrometry for molecular mapping of three different bilayers composed of OLED materials. This approach allows us to successfully map functional groups in the by-layer OLED and measure the thickness of two OLED layers. This study introduces spatially resolved functional group analysis using electron beam spectroscopy and contributes to the development of methods for complete nanoscale analysis of organic multilayer architectures.
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Affiliation(s)
- Kyun Seong Dae
- Center
for Research Equipment, Korea Basic Science
Institute, Daejeon 34133, Republic
of Korea
| | - Kyoung-Soon Jang
- Center
for Research Equipment, Korea Basic Science
Institute, Daejeon 34133, Republic
of Korea
| | - Chang Min Choi
- Center
for Scientific Instrumentation, Korea Basic
Science Institute, Cheongju 28119, Republic
of Korea
| | - Jae Hyuck Jang
- Center
for Research Equipment, Korea Basic Science
Institute, Daejeon 34133, Republic
of Korea
- Graduate
School of Analysis Science and Technology, Chungnam National University, Daejeon 34134, Republic of Korea
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Shen Y, Howard L, Yu XY. Secondary Ion Mass Spectral Imaging of Metals and Alloys. MATERIALS (BASEL, SWITZERLAND) 2024; 17:528. [PMID: 38276468 PMCID: PMC10820874 DOI: 10.3390/ma17020528] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/27/2023] [Revised: 01/18/2024] [Accepted: 01/20/2024] [Indexed: 01/27/2024]
Abstract
Secondary Ion Mass Spectrometry (SIMS) is an outstanding technique for Mass Spectral Imaging (MSI) due to its notable advantages, including high sensitivity, selectivity, and high dynamic range. As a result, SIMS has been employed across many domains of science. In this review, we provide an in-depth overview of the fundamental principles underlying SIMS, followed by an account of the recent development of SIMS instruments. The review encompasses various applications of specific SIMS instruments, notably static SIMS with time-of-flight SIMS (ToF-SIMS) as a widely used platform and dynamic SIMS with Nano SIMS and large geometry SIMS as successful instruments. We particularly focus on SIMS utility in microanalysis and imaging of metals and alloys as materials of interest. Additionally, we discuss the challenges in big SIMS data analysis and give examples of machine leaning (ML) and Artificial Intelligence (AI) for effective MSI data analysis. Finally, we recommend the outlook of SIMS development. It is anticipated that in situ and operando SIMS has the potential to significantly enhance the investigation of metals and alloys by enabling real-time examinations of material surfaces and interfaces during dynamic transformations.
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Affiliation(s)
- Yanjie Shen
- College of Biology and Oceanography, Weifang University, 5147 Dongfeng East Street, Weifang 261061, China
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA
| | - Logan Howard
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA
- The Bredesen Center, 310 Ferris Hall, 1508 Middle Drive, Knoxville, TN 37996, USA
| | - Xiao-Ying Yu
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA
- The Bredesen Center, 310 Ferris Hall, 1508 Middle Drive, Knoxville, TN 37996, USA
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Trindade GF, Sul S, Kim J, Havelund R, Eyres A, Park S, Shin Y, Bae HJ, Sung YM, Matjacic L, Jung Y, Won J, Jeon WS, Choi H, Lee HS, Lee JC, Kim JH, Gilmore IS. Direct identification of interfacial degradation in blue OLEDs using nanoscale chemical depth profiling. Nat Commun 2023; 14:8066. [PMID: 38052834 DOI: 10.1038/s41467-023-43840-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Accepted: 11/21/2023] [Indexed: 12/07/2023] Open
Abstract
Understanding the degradation mechanism of organic light-emitting diodes (OLED) is essential to improve device performance and stability. OLED failure, if not process-related, arises mostly from chemical instability. However, the challenges of sampling from nanoscale organic layers and interfaces with enough analytical information has hampered identification of degradation products and mechanisms. Here, we present a high-resolution diagnostic method of OLED degradation using an Orbitrap mass spectrometer equipped with a gas cluster ion beam to gently desorb nanometre levels of materials, providing unambiguous molecular information with 7-nm depth resolution. We chemically depth profile and analyse blue phosphorescent and thermally-activated delayed fluorescent (TADF) OLED devices at different degradation levels. For OLED devices with short operational lifetimes, dominant chemical degradation mainly relate to oxygen loss of molecules that occur at the interface between emission and electron transport layers (EML/ETL) where exciton distribution is maximised, confirmed by emission zone measurements. We also show approximately one order of magnitude increase in lifetime of devices with slightly modified host materials, which present minimal EML/ETL interfacial degradation and show the method can provide insight for future material and device architecture development.
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Affiliation(s)
| | - Soohwan Sul
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea
| | - Joonghyuk Kim
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea
| | - Rasmus Havelund
- National Physical Laboratory, NiCE-MSI, Teddington, TW11 0LW, UK
| | - Anya Eyres
- National Physical Laboratory, NiCE-MSI, Teddington, TW11 0LW, UK
| | - Sungjun Park
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea
| | - Youngsik Shin
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea
| | - Hye Jin Bae
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea
| | - Young Mo Sung
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea
| | - Lidija Matjacic
- National Physical Laboratory, NiCE-MSI, Teddington, TW11 0LW, UK
| | - Yongsik Jung
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea
| | - Jungyeon Won
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea
| | - Woo Sung Jeon
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea
| | - Hyeonho Choi
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea
| | - Hyo Sug Lee
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea
| | - Jae-Cheol Lee
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea
- Korea Research Institute of Material Property Analysis (KRIMPA), 712, Nongseo-dong 455, Yongin, 17111, Republic of Korea
| | - Jung-Hwa Kim
- Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
| | - Ian S Gilmore
- National Physical Laboratory, NiCE-MSI, Teddington, TW11 0LW, UK.
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Finšgar M. Time-of-flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy study of 2-phenylimidazole on brass. RAPID COMMUNICATIONS IN MASS SPECTROMETRY : RCM 2021; 35:e8974. [PMID: 33053255 DOI: 10.1002/rcm.8974] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2020] [Revised: 09/23/2020] [Accepted: 10/08/2020] [Indexed: 06/11/2023]
Abstract
RATIONALE This work presents the first surface analysis investigation of 2-phenylimidazole (PhI) as a corrosion inhibitor for brass in a 3 wt.% NaCl solution using time-of-flight secondary ion mass spectrometry (TOF-SIMS) and X-ray photoelectron spectroscopy (XPS). METHODS A time-of-flight secondary ion mass spectrometer was used to describe the elemental and molecular specific signals on the brass surface. Gas cluster/monoatomic ion beam depth profiling and two-dimensional (2D) imaging showed the surface properties of the PhI surface layer. In addition, detailed XPS was used to describe the element-specific signals on the brass surface. Furthermore, principal component analysis demonstrated the distribution of the different phases of the surface. Finally, the applicability of PhI in hot corrosion studies was suggested by a thermal stability experiment. RESULTS TOF-SIMS measurements showed an intense positive-ion TOF-SIMS signal for protonated PhI, i.e. C9 H9 N2 + at m/z 145.07. Moreover, there was an intense negative-ion TOF-SIMS signal for deprotonated PhI, i.e. C9 H7 N2 ¯ at m/z 143.06. Gas cluster ion beam sputtering associated with the analysis of the XPS-excited Cu L3 M4,5 M4,5 revealed a connection between Cu(I) and PhI to form organometallic complexes. CONCLUSIONS The formation of the organometallic complexes with Cu and Zn metal atoms/ions was identified using TOF-SIMS in positive and negative polarity mode: PhI-Cu, PhI-Cu2 , PhI-Zn, and PhI-Zn2 complexes were present on the brass surface. The TOF-SIMS measurements were supported by XPS measurements.
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Affiliation(s)
- Matjaž Finšgar
- Faculty of Chemistry and Chemical Engineering, University of Maribor, Smetanova ulica 17, Maribor, 2000, Slovenia
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