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For: Kong S, Wilson S, Kimpton D, Guichard E. P-4: TCAD Simulation of Hydrogen Diffusion Induced Bias Temperature Instability in a-IGZO Thin-Film Transistors. ACTA ACUST UNITED AC 2017. [DOI: 10.1002/sdtp.11875] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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