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Yunin P, Drozdov Y, Drozdov M, Khrykin O, Shashkin V. Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer-thin layers. SURF INTERFACE ANAL 2016. [DOI: 10.1002/sia.6068] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- P.A. Yunin
- Institute for Physics of Microstructures of the Russian Academy of Sciences; Nizhny Novgorod Russia
- Lobachevsky State University of Nizhny Novgorod; Nizhny Novgorod Russia
| | - Yu.N. Drozdov
- Institute for Physics of Microstructures of the Russian Academy of Sciences; Nizhny Novgorod Russia
- Lobachevsky State University of Nizhny Novgorod; Nizhny Novgorod Russia
| | - M.N. Drozdov
- Institute for Physics of Microstructures of the Russian Academy of Sciences; Nizhny Novgorod Russia
- Lobachevsky State University of Nizhny Novgorod; Nizhny Novgorod Russia
| | - O.I. Khrykin
- Institute for Physics of Microstructures of the Russian Academy of Sciences; Nizhny Novgorod Russia
| | - V.I. Shashkin
- Institute for Physics of Microstructures of the Russian Academy of Sciences; Nizhny Novgorod Russia
- Lobachevsky State University of Nizhny Novgorod; Nizhny Novgorod Russia
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