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Jang JS, Kang HJ, Kim KJ. Mechanism of abnormal interface artifacts in SIMS depth profiling of a Si/Ge multilayer by oxygen ions. SURF INTERFACE ANAL 2014. [DOI: 10.1002/sia.5422] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Jong Shik Jang
- Division of Industrial Metrology; Korea Research Institute of Standards and Science; 267 Gajeon-ro, Yuseong-gu Daejeon 305-600 Korea
- Department of Physics; Chungbuk National University; 410 Seongbong-ro, Heungdeok-gu Cheongju 361-763 Korea
| | - Hee Jae Kang
- Department of Physics; Chungbuk National University; 410 Seongbong-ro, Heungdeok-gu Cheongju 361-763 Korea
| | - Kyung Joong Kim
- Division of Industrial Metrology; Korea Research Institute of Standards and Science; 267 Gajeon-ro, Yuseong-gu Daejeon 305-600 Korea
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Ultrahigh resolution secondary ion mass spectrometry profiling with oblique O[sub 2][sup +] beams below 200 eV. ACTA ACUST UNITED AC 2004. [DOI: 10.1116/1.1667510] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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Dong G, Liangzhen C, Rong L, Wee ATS. SIMS quantification of Si1?xGex alloys using polyatomic secondary ions. SURF INTERFACE ANAL 2001. [DOI: 10.1002/sia.1030] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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Jiang ZX, Alkemade PFA. A Novel Approach for the Determination of the Actual Incidence Angle in a Magnetic-sector SIMS Instrument. SURF INTERFACE ANAL 1997. [DOI: 10.1002/(sici)1096-9918(199709)25:10<817::aid-sia305>3.0.co;2-o] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
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Comment on the possibility of partial deconvolution of SIMS depth profiles in ‘an analytic form for the SIMS response function measured from ultra-thin impurity layers’ by M. G. Dowsettet al. [Surf. Interface Anal. 21, 310 (1994)]. SURF INTERFACE ANAL 1995. [DOI: 10.1002/sia.740231308] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Herion J, Siekmann H, Voigtländer B, Vescan L. Secondary ion mass spectrometry of SiGe structures grown by surfactant-mediated epitaxy and by low pressure chemical vapour deposition. SURF INTERFACE ANAL 1994. [DOI: 10.1002/sia.740220174] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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Wittmaack K. Towards the ultimate limits of depth resolution in sputter profiling: Beam-induced chemical changes and the importance of sample quality. SURF INTERFACE ANAL 1994. [DOI: 10.1002/sia.740210602] [Citation(s) in RCA: 38] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
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Carter G, Nobes MJ. Ion-beam-induced topography and compositional changes in depth profiling. SURF INTERFACE ANAL 1992. [DOI: 10.1002/sia.740190111] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
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