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Cong X, Yin H, Zheng Y, He W. Recent progress of group III-V materials-based nanostructures for photodetection. NANOTECHNOLOGY 2024; 35:382002. [PMID: 38759630 DOI: 10.1088/1361-6528/ad4cf0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2023] [Accepted: 05/17/2024] [Indexed: 05/19/2024]
Abstract
Due to the suitable bandgap structure, efficient conversion rates of photon to electron, adjustable optical bandgap, high electron mobility/aspect ratio, low defects, and outstanding optical and electrical properties for device design, III-V semiconductors have shown excellent properties for optoelectronic applications, including photodiodes, photodetectors, solar cells, photocatalysis, etc. In particular, III-V nanostructures have attracted considerable interest as a promising photodetector platform, where high-performance photodetectors can be achieved based on the geometry-related light absorption and carrier transport properties of III-V materials. However, the detection ranges from Ultraviolet to Terahertz including broadband photodetectors of III-V semiconductors still have not been more broadly development despite significant efforts to obtain the high performance of III-V semiconductors. Therefore, the recent development of III-V photodetectors in a broad detection range from Ultraviolet to Terahertz, and future requirements are highly desired. In this review, the recent development of photodetectors based on III-V semiconductor with different detection range is discussed. First, the bandgap of III-V materials and synthesis methods of III-V nanostructures are explored, subsequently, the detection mechanism and key figures-of-merit for the photodetectors are introduced, and then the device performance and emerging applications of photodetectors are provided. Lastly, the challenges and future research directions of III-V materials for photodetectors are presented.
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Affiliation(s)
- Xiangna Cong
- College of Electronics and Information Engineering, Institute of Microelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Huabi Yin
- College of Electronics and Information Engineering, Institute of Microelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Yue Zheng
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Wenlong He
- College of Electronics and Information Engineering, Institute of Microelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
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Giang DN, Nguyen NM, Ngo DA, Tran TT, Duy LT, Tran CK, Tran TTV, La PPH, Dang VQ. A visible-light photodetector based on heterojunctions between CuO nanoparticles and ZnO nanorods. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2023; 14:1018-1027. [PMID: 37915311 PMCID: PMC10616698 DOI: 10.3762/bjnano.14.84] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/15/2023] [Accepted: 09/25/2023] [Indexed: 11/03/2023]
Abstract
Optoelectronic devices have various applications in medical equipment, sensors, and communication systems. Photodetectors, which convert light into electrical signals, have gained much attention from many research teams. This study describes a low-cost photodetector based on CuO nanoparticles and ZnO nanorods operating in a wide range of light wavelengths (395, 464, 532, and 640 nm). Particularly, under 395 nm excitation, the heterostructure device exhibits high responsivity, photoconductive gain, detectivity, and sensitivity with maximum values of 1.38 A·W-1, 4.33, 2.58 × 1011 Jones, and 1934.5% at a bias of 2 V, respectively. The sensing mechanism of the p-n heterojunction of CuO/ZnO is also explored. Overall, this study indicates that the heterostructure of CuO nanoparticles and ZnO nanorods obtained via a simple and cost-effective synthesis process has great potential for optoelectronic applications.
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Affiliation(s)
- Doan Nhat Giang
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City 70000, Vietnam
- Vietnam National University (VNU-HCM), Ho Chi Minh City 70000, Vietnam
| | - Nhat Minh Nguyen
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City 70000, Vietnam
- Vietnam National University (VNU-HCM), Ho Chi Minh City 70000, Vietnam
| | - Duc Anh Ngo
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City 70000, Vietnam
- Vietnam National University (VNU-HCM), Ho Chi Minh City 70000, Vietnam
| | - Thanh Trang Tran
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City 70000, Vietnam
- Vietnam National University (VNU-HCM), Ho Chi Minh City 70000, Vietnam
| | - Le Thai Duy
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City 70000, Vietnam
- Vietnam National University (VNU-HCM), Ho Chi Minh City 70000, Vietnam
| | - Cong Khanh Tran
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City 70000, Vietnam
- Vietnam National University (VNU-HCM), Ho Chi Minh City 70000, Vietnam
| | - Thi Thanh Van Tran
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City 70000, Vietnam
- Vietnam National University (VNU-HCM), Ho Chi Minh City 70000, Vietnam
| | - Phan Phuong Ha La
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City 70000, Vietnam
- Vietnam National University (VNU-HCM), Ho Chi Minh City 70000, Vietnam
| | - Vinh Quang Dang
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City 70000, Vietnam
- Vietnam National University (VNU-HCM), Ho Chi Minh City 70000, Vietnam
- Center for Innovative Materials and Architectures (INOMAR), Ho Chi Minh City 70000, Vietnam
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Nguyen NM, Ngo DA, Thu Nguyen LN, Luong HN, Duy Huynh HN, Man Nguyen BG, Doan NG, Duy LT, Tran AV, Tran CK, Pham KN, Dang VQ. Developing low-cost nanohybrids of ZnO nanorods and multi-shaped silver nanoparticles for broadband photodetectors. RSC Adv 2023; 13:21703-21709. [PMID: 37476039 PMCID: PMC10354500 DOI: 10.1039/d3ra03485b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/25/2023] [Accepted: 07/13/2023] [Indexed: 07/22/2023] Open
Abstract
Photodetectors are essential elements for various applications like fiber optic communication systems, biomedical imaging, and so on. Thus, improving the performance and reducing the material costs of photodetectors would act as a motivation toward the future advancement of those applications. This study introduces the development of a nanohybrid of zinc oxide nanorods (ZnONRs) and multi-shaped silver nanoparticles MAgNPs through a simple solution process; in which ZnONRs are hybridized with MAgNPs to enable visible absorption through the surface plasmon resonance (SPR) effect. The photodetector based on ZnONRs/MAgNPs is responsive to visible light with representative wavelengths of 395, 464, 532 and 640 nm, and it exhibits high responsivity (R), photoconductive gain (G) and detectivity (D). The maximum R is calculated from the fitting curve of the responsivity-power relation with the value of 5.35 × 103 (mA W-1) at 395 nm excitation. The highest G and D reach 8.984 and 3.71 × 1010 Jones at that wavelength. This reveals the promise of our innovative broadband photodetector for practical usage.
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Affiliation(s)
- Nhat Minh Nguyen
- Faculty of Physics and Engineering Physics, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University Ho Chi Minh City 700000 Vietnam
| | - Duc Anh Ngo
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University Ho Chi Minh City 700000 Vietnam
| | - Le Ngoc Thu Nguyen
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University Ho Chi Minh City 700000 Vietnam
| | - Hoai Nhan Luong
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University Ho Chi Minh City 700000 Vietnam
| | - Ha Ngoc Duy Huynh
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University Ho Chi Minh City 700000 Vietnam
| | - Bui Gia Man Nguyen
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University Ho Chi Minh City 700000 Vietnam
| | - Nhat Giang Doan
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University Ho Chi Minh City 700000 Vietnam
| | - Le Thai Duy
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University Ho Chi Minh City 700000 Vietnam
| | - Anh Vy Tran
- Institute of Applied Technology and Sustainable Development, Nguyen Tat Thanh University Ho Chi Minh City 700000 Vietnam
- Faculty of Environmental and Food Engineering, Nguyen Tat Thanh University Ho Chi Minh City 700000 Vietnam
| | - Cong Khanh Tran
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University Ho Chi Minh City 700000 Vietnam
| | - Kim Ngoc Pham
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Center for Innovative Materials and Architectures (INOMAR) Ho Chi Minh City 700000 Vietnam
- Vietnam National University Ho Chi Minh City 700000 Vietnam
| | - Vinh Quang Dang
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Center for Innovative Materials and Architectures (INOMAR) Ho Chi Minh City 700000 Vietnam
- Vietnam National University Ho Chi Minh City 700000 Vietnam
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Aftab S, Hegazy HH. Emerging Trends in 2D TMDs Photodetectors and Piezo-Phototronic Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205778. [PMID: 36732842 DOI: 10.1002/smll.202205778] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Revised: 01/20/2023] [Indexed: 05/04/2023]
Abstract
The piezo-phototronic effect shows promise with regards to improving the performance of 2D semiconductor-based flexible optoelectronics, which will potentially open up new opportunities in the electronics field. Mechanical exfoliation and chemical vapor deposition (CVD) influence the piezo-phototronic effect on a transparent, ultrasensitive, and flexible van der Waals (vdW) heterostructure, which allows the use of intrinsic semiconductors, such as 2D transition metal dichalcogenides (TMD). The latest and most promising 2D TMD-based photodetectors and piezo-phototronic devices are discussed in this review article. As a result, it is possible to make flexible piezo-phototronic photodetectors, self-powered sensors, and higher strain tolerance wearable and implantable electronics for health monitoring and generation of piezoelectricity using just a single semiconductor or vdW heterostructures of various nanomaterials. A comparison is also made between the functionality and distinctive properties of 2D flexible electronic devices with a range of applications made from 2D TMDs materials. The current state of the research about 2D TMDs can be applied in a variety of ways in order to aid in the development of new types of nanoscale optoelectronic devices. Last, it summarizes the problems that are currently being faced, along with potential solutions and future prospects.
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Affiliation(s)
- Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul, 05006, South Korea
| | - Hosameldin Helmy Hegazy
- Department of Physics, Faculty of Science, King Khalid University, Abha, P.O. Box 9004, Saudi Arabia
- 2Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha, 61413, P. O. Box 9004, Saudi Arabia
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Wang G, Han B, Mak CH, Liu J, Liu B, Liu P, Hao X, Wang H, Ma S, Xu B, Hsu HY. Mixed-Dimensional van der Waals Heterostructure for High-Performance and Air-Stable Perovskite Nanowire Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:55183-55191. [PMID: 36469437 DOI: 10.1021/acsami.2c15139] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
An organic-inorganic hybrid perovskite nanowire (NW), CH3NH3PbI3, shows great potential for high-performance photodetectors due to its excellent photoresponse. However, the inefficient carrier collection between the one-dimensional (1D) NWs and metallic electrodes, as well as degradation of the perovskite, limits the viability of the CH3NH3PbI3 NWs for commercial production. Here, we demonstrate a photodetector with a mixed-dimensional van der Waals heterostructure of hexagonal boron nitride (hBN)/graphene (Gr)/1D CH3NH3PbI3, which exhibits excellent responsivity and specific detectivity of up to 558 A/W and 2.3 × 1012 Jones, owing to the improved carrier extraction at the electrical contact between Gr and the NW. As for the atomic encapsulation of hBN, the device is extremely robust and maintains its outstanding performance for more than 2 months when exposed to air. Moreover, benefitting from the 1D geometry of the CH3NH3PbI3 NW, our device is highly sensitive to polarized light. The mixed-dimensional van der Waals heterostructure, hBN/Gr/1D CH3NH3PbI3, would provide a novel idea and protocol for fabricating high-performance and air-stable photoelectronic devices based on organic-inorganic hybrid perovskite NWs.
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Affiliation(s)
- Guanghui Wang
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
- School of Materials Science and Engineering, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Bin Han
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Chun Hong Mak
- School of Energy and Environment, Department of Materials Science and Engineering, City University of Hong Kong, Kowloon Tong999077, Hong Kong, China
- Shenzhen Research Institute of City University of Hong Kong, Shenzhen518057, China
| | - Jialong Liu
- School of Materials Science and Engineering, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Bo Liu
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
- School of Materials Science and Engineering, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Peng Liu
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene, Xi'an710072, Shaanxi, China
| | - Xiaodong Hao
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Hongyue Wang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene, Xi'an710072, Shaanxi, China
| | - Shufang Ma
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Bingshe Xu
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an710021, Shaanxi, China
| | - Hsien-Yi Hsu
- School of Energy and Environment, Department of Materials Science and Engineering, City University of Hong Kong, Kowloon Tong999077, Hong Kong, China
- Shenzhen Research Institute of City University of Hong Kong, Shenzhen518057, China
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Dai C, Liu Y, Wei D. Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization. Chem Rev 2022; 122:10319-10392. [PMID: 35412802 DOI: 10.1021/acs.chemrev.1c00924] [Citation(s) in RCA: 57] [Impact Index Per Article: 28.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.
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Affiliation(s)
- Changhao Dai
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Yunqi Liu
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Dacheng Wei
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
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Huang PY, Qin JK, Zhu CY, Zhen L, Xu CY. 2D-1D mixed-dimensional heterostructures: progress, device applications and perspectives. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:493001. [PMID: 34479213 DOI: 10.1088/1361-648x/ac2388] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2021] [Accepted: 09/03/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have attracted broad interests and been extensively exploited for a variety of functional applications. Moreover, one-dimensional (1D) atomic crystals can also be integrated into 2D templates to create mixed-dimensional heterostructures, and the versatility of combinations provides 2D-1D heterostructures plenty of intriguing physical properties, making them promising candidate to construct novel electronic and optoelectronic nanodevices. In this review, we first briefly present an introduction of relevant fabrication methods and structural configurations for 2D-1D heterostructures integration. We then discuss the emerged intriguing physics, including high optical absorption, efficient carrier separation, fast charge transfer and plasmon-exciton interconversion. Their potential applications such as electronic/optoelectronic devices, photonic devices, spintronic devices and gas sensors, are also discussed. Finally, we provide a brief perspective for the future opportunities and challenges in this emerging field.
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Affiliation(s)
- Pei-Yu Huang
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
| | - Jing-Kai Qin
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
| | - Cheng-Yi Zhu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
| | - Liang Zhen
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, People's Republic of China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China
| | - Cheng-Yan Xu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, People's Republic of China
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Han L, Yang M, Wen P, Gao W, Huo N, Li J. A high performance self-powered photodetector based on a 1D Te-2D WS 2 mixed-dimensional heterostructure. NANOSCALE ADVANCES 2021; 3:2657-2665. [PMID: 36134149 PMCID: PMC9419060 DOI: 10.1039/d1na00073j] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2021] [Accepted: 03/14/2021] [Indexed: 05/21/2023]
Abstract
One-dimensional (1D)-two-dimensional (2D) van der Waals (vdWs) mixed-dimensional heterostructures with advantages of an atomically sharp interface, high quality and good compatibility have attracted tremendous attention in recent years. Herein, a mixed-dimensional vertical heterostructure is constructed by transferring mechanically exfoliated 2D WS2 nanosheets on epitaxially grown 1D tellurium (Te) microwires. According to the theoretical type-II band alignment, the device exhibits a photovoltaic effect and serves as an excellent self-powered photodetector with a maximum open-circuit voltage (V oc) up to ∼0.2 V. Upon 635 nm light illumination, the photoresponsivity, external quantum efficiency and detectivity of the self-powered photodetector (SPPD) are calculated to be 471 mA W-1, 91% and 1.24 × 1012 Jones, respectively. Moreover, the dark current of the SPPD is highly suppressed to the sub-pA level due to the large lateral built-in electric field, which leads to a high I light/I dark ratio of 104 with a rise time of 25 ms and decay time of 14.7 ms. The abovementioned properties can be further enhanced under a negative bias of -2 V. In brief, the 1D Te-2D WS2 mixed-dimensional heterostructures have great application potential in high performance photodetectors and photovoltaics.
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Affiliation(s)
- Lixiang Han
- School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Mengmeng Yang
- School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Peiting Wen
- Institute of Semiconductors, South China Normal University Guangzhou 510631 P.R. China
| | - Wei Gao
- Institute of Semiconductors, South China Normal University Guangzhou 510631 P.R. China
| | - Nengjie Huo
- Institute of Semiconductors, South China Normal University Guangzhou 510631 P.R. China
| | - Jingbo Li
- Institute of Semiconductors, South China Normal University Guangzhou 510631 P.R. China
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Nalwa HS. A review of molybdenum disulfide (MoS 2) based photodetectors: from ultra-broadband, self-powered to flexible devices. RSC Adv 2020; 10:30529-30602. [PMID: 35516069 PMCID: PMC9056353 DOI: 10.1039/d0ra03183f] [Citation(s) in RCA: 47] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2020] [Accepted: 07/17/2020] [Indexed: 12/23/2022] Open
Abstract
Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.
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Affiliation(s)
- Hari Singh Nalwa
- Advanced Technology Research 26650 The Old Road Valencia California 91381 USA
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