Gayathri R, Angela VM, Devibala P, Imran PM, Nagarajan S. Tailoring the Resistive Switching WORM Memory Behavior of Functionalized Bis(triphenylamine).
ACS APPLIED MATERIALS & INTERFACES 2023;
15:23546-23556. [PMID:
37130268 DOI:
10.1021/acsami.3c00439]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
To better understand the structure-property relationship and the significance of the donor-acceptor (D-A) system in resistive memory devices, a series of new organic small molecules with A-π-D-π-A- and D-π-D-π-D-based architecture comprising a bis(triphenylamine) core unit and ethynyl-linked electron donor/acceptor arms were designed and synthesized. The devices with A-π-D-π-A structures exhibited write-once-read-many memory behavior with a good retention time of 1000 s while those based on D-π-D-π-D molecules presented only conductor property. The compound with nitrophenyl substitution resulted in a higher ON/OFF current ratio of 104, and the fluorophenyl substitution exhibited the lowest threshold voltage of -1.19 V. Solubility of the compounds in common organic solvents suggests that they are promising candidates for economic solution-processable techniques. Density functional theory calculations were used to envision the frontier molecular orbitals and to support the proposed resistive switching mechanisms. It is inferred that the presence of donor/acceptor substituents has a significant impact on the highest occupied molecular orbital-lowest unoccupied molecular orbital energy levels of the molecules, which affects their memory-switching behavior and thus suggests that a D-A architecture is ideal for memory device resistance switching characteristics.
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