Spin-polarized semiconductors: tuning the electronic structure of graphene by introducing a regular pattern of sp3 carbons on the graphene plane

Current and future directions in electron transfer chemistry of graphene

The participation of graphene in electron transfer chemistry, where an electron is transferred between graphene and other species, encompasses many important processes that have shown versatility and potential for use in important applications.

Covalent nitrophenyl diazonium functionalized silicene for spintronics: a first-principles study

We predict some novel electronic and magnetic properties of a functionalized silicene sheet by nitrophenyl diazonium (NPD) using first-principles calculations in the framework of density functional theory with dispersion corrections. Our calculations at the HSE06 level show that for the three coverage ratios of NPD considered in this work (i.e., NPD : Si = 1 : 8, 1 : 18 and 1 : 32), spin-polarized electronic structures can be always realized with NPD adsorption although the bandgap decreases upon reducing the NPD coverage ratio. The quasi-localized pz electrons of Si are identified to be responsible for the ferrimagnetism in these two-dimensional systems. Remarkably, the system with the NPD : Si = 1 : 8 ratio is predicted to be a bipolar magnetic semiconductor. As such, half-metallicity can be realized by applying a gate voltage with reversible spin polarization, making NPD-1/8 a potential candidate for future spintronic applications. This work offers a new tailor-made functionalization approach to realize magnetic semiconducting silicene.

Dielectric environment as a factor to enhance the production yield of solvent exfoliated graphene

High yield production of high quality graphene is essential for its application in electronics, optoelectronics and energy storage devices.

Controlling the spatial arrangement of organic magnetic anions adsorbed on epitaxial graphene on Ru(0001)

Achieving control over the self-organization of functional molecules on graphene is critical for the development of graphene technology in organic electronic and spintronic. Here, by using a scanning tunneling microscope (STM), we show that the electron acceptor molecule 7,7',8,8'-tetracyano-p-quinodimethane (TCNQ) and its fluorinated derivative 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyano-p-quinodimethane (F4-TCNQ), co-deposited on the surface of epitaxial graphene on Ru(0001), transform spontaneously into their corresponding magnetic anions and self-organize in two remarkably different structures. TCNQ forms densely packed linear magnetic arrays, while F4-TCNQ molecules remain as isolated non interacting magnets. With the help of density functional theory (DFT) calculations, we trace back the origin of this behavior in the competition between the intermolecular repulsion experienced by the individual charged anions, which tends to separate the molecules, and the delocalization of the electrons transferred from the surface to the molecules, which promotes the formation of molecular oligomers. Our results demonstrate that it is possible to control the spatial arrangement of organic magnetic anions co-adsorbed on a surface by means of chemical substitution, paving the way for the design of two-dimensional fully organic magnetic structures on graphene and on other surfaces.

On the addition of aryl radicals to graphene: the importance of nonbonded interactions

Dispersion-corrected density functional theory is utilized to study the addition of aryl radicals to perfect and defective graphene. Although the perfect sheet shows a low reactivity against aryl diazonium salts, the agglomeration of these groups and the addition onto defect sites improves the feasibility of the reaction by increasing binding energies per aryl group up to 27 kcal mol(-1). It is found that if a single phenyl radical interacts with graphene, the covalent and noncovalent additions have similar binding energies, but in the particular case of the nitrophenyl group, the adsorption is stronger than the chemisorption. The single vacancy shows the largest reactivity, increasing the binding energy per aryl group by about 80 kcal mol(-1). The zigzag edge ranks second, enhancing the reactivity 5.4 times with respect to the perfect sheet. The less reactive defect site is the Stone-Wales type, but even in this case the addition of an isolated aryl radical is exergonic. The arylation process is favored if the groups are attached nearby and on different sublattices. This is particularly true for the ortho and para positions. However, the enhancement of the binding energies decreases quickly if the distance between the two aryl radicals is increased, thereby making the addition on the perfect sheet difficult. A bandgap of 1-2 eV can be opened on functionalization of the graphene sheets with aryl radicals, but for certain configurations the sheet can maintain its semimetallic character even if there is one aryl radical per eight carbon atoms. At the highest level of functionalization achieved, that is, one aryl group per five carbon atoms, the bandgap is 1.9 eV. Regarding the effect of using aryl groups with different substituents, it is found that they all induce the same bandgap and thus the presence of NO(2), H, or Br is not relevant for the alteration of the electronic properties. Finally, it is observed that the presence of tetrafluoroborate can induce metallic character in graphene.

Diazonium functionalized graphene: microstructure, electric, and magnetic properties

The unique honeycomb lattice structure of graphene gives rise to its outstanding electronic properties such as ultrahigh carrier mobility, ballistic transport, and more. However, a crucial obstacle to its use in the electronics industry is its lack of an energy bandgap. A covalent chemistry strategy could overcome this problem, and would have the benefits of being highly controllable and stable in the ambient environment. One possible approach is aryl diazonium functionalization. In this Account, we investigate the micromolecular/lattice structure, electronic structure, and electron-transport properties of nitrophenyl-diazonium-functionalized graphene. We find that nitrophenyl groups mainly adopt random and inhomogeneous configurations on the graphene basal plane, and that their bonding with graphene carbon atoms leads to slight elongation of the graphene lattice spacing. By contrast, hydrogenated graphene has a compressed lattice. Low levels of functionalization suppressed the electric conductivity of the resulting functionalized graphene, while highly functionalized graphene showed the opposite effect. This difference arises from the competition between the charge transfer effect and the scattering enhancement effect introduced by nitrophenyl groups bonding with graphene carbon atoms. Detailed electron transport measurements revealed that the nitrophenyl diazonium functionalization locally breaks the symmetry of graphene lattice, which leads to an increase in the density of state near the Fermi level, thus increasing the carrier density. On the other hand, the bonded nitrophenyl groups act as scattering centers, lowering the mean free path of the charge carriers and suppressing the carrier mobility. In rare cases, we observed ordered configurations of nitrophenyl groups in local domains on graphene flakes due to fluctuations in the reaction processes. We describe one example of such a superlattice, with a lattice constant nearly twice of that of pristine graphene. We performed comprehensive theoretical calculations to investigate the lattice and the electronic structure of the superlattice structure. Our results reveal that it is a thermodynamically stable, spin-polarized semiconductor with a bandgap of ∼0.5 eV. Our results demonstrate the possibility of controlling graphene's electronic properties using aryl diazonium functionalization. Asymmetric addition of aryl groups to different sublattices of graphene is a promising approach for producing ferromagnetic, semiconductive graphene, which will have broad applications in the electronic industry.