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Wang Y, Xie W, Peng W, Li F, He Y. Fundamentals and Applications of ZnO-Nanowire-Based Piezotronics and Piezo-Phototronics. MICROMACHINES 2022; 14:mi14010047. [PMID: 36677109 PMCID: PMC9860666 DOI: 10.3390/mi14010047] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Revised: 12/20/2022] [Accepted: 12/22/2022] [Indexed: 06/02/2023]
Abstract
The piezotronic effect is a coupling effect of semiconductor and piezoelectric properties. The piezoelectric potential is used to adjust the p-n junction barrier width and Schottky barrier height to control carrier transportation. At present, it has been applied in the fields of sensors, human-machine interaction, and active flexible electronic devices. The piezo-phototronic effect is a three-field coupling effect of semiconductor, photoexcitation, and piezoelectric properties. The piezoelectric potential generated by the applied strain in the piezoelectric semiconductor controls the generation, transport, separation, and recombination of carriers at the metal-semiconductor contact or p-n junction interface, thereby improving optoelectronic devices performance, such as photodetectors, solar cells, and light-emitting diodes (LED). Since then, the piezotronics and piezo-phototronic effects have attracted vast research interest due to their ability to remarkably enhance the performance of electronic and optoelectronic devices. Meanwhile, ZnO has become an ideal material for studying the piezotronic and piezo-phototronic effects due to its simple preparation process and better biocompatibility. In this review, first, the preparation methods and structural characteristics of ZnO nanowires (NWs) with different doping types were summarized. Then, the theoretical basis of the piezotronic effect and its application in the fields of sensors, biochemistry, energy harvesting, and logic operations (based on piezoelectric transistors) were reviewed. Next, the piezo-phototronic effect in the performance of photodetectors, solar cells, and LEDs was also summarized and analyzed. In addition, modulation of the piezotronic and piezo-phototronic effects was compared and summarized for different materials, structural designs, performance characteristics, and working mechanisms' analysis. This comprehensive review provides fundamental theoretical and applied guidance for future research directions in piezotronics and piezo-phototronics for optoelectronic devices and energy harvesting.
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Affiliation(s)
- Yitong Wang
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Wanli Xie
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Wenbo Peng
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Fangpei Li
- State Key Laboratory of Solidification Processing, Key Laboratory of Radiation Detection Materials and Devices, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China
| | - Yongning He
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
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2
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Dai B, Biesold GM, Zhang M, Zou H, Ding Y, Wang ZL, Lin Z. Piezo-phototronic effect on photocatalysis, solar cells, photodetectors and light-emitting diodes. Chem Soc Rev 2021; 50:13646-13691. [PMID: 34821246 DOI: 10.1039/d1cs00506e] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The piezo-phototronic effect (a coupling effect of piezoelectric, photoexcitation and semiconducting properties, coined in 2010) has been demonstrated to be an ingenious and robust strategy to manipulate optoelectronic processes by tuning the energy band structure and photoinduced carrier behavior. The piezo-phototronic effect exhibits great potential in improving the quantum yield efficiencies of optoelectronic materials and devices and thus could help increase the energy conversion efficiency, thus alleviating the energy shortage crisis. In this review, the fundamental principles and challenges of representative optoelectronic materials and devices are presented, including photocatalysts (converting solar energy into chemical energy), solar cells (generating electricity directly under light illumination), photodetectors (converting light into electrical signals) and light-emitting diodes (LEDs, converting electric current into emitted light signals). Importantly, the mechanisms of how the piezo-phototronic effect controls the optoelectronic processes and the recent progress and applications in the above-mentioned materials and devices are highlighted and summarized. Only photocatalysts, solar cells, photodetectors, and LEDs that display piezo-phototronic behavior are reviewed. Material and structural design, property characterization, theoretical simulation calculations, and mechanism analysis are then examined as strategies to further enhance the quantum yield efficiency of optoelectronic devices via the piezo-phototronic effect. This comprehensive overview will guide future fundamental and applied studies that capitalize on the piezo-phototronic effect for energy conversion and storage.
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Affiliation(s)
- Baoying Dai
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Gill M Biesold
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Meng Zhang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Haiyang Zou
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Yong Ding
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Zhong Lin Wang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Zhiqun Lin
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
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3
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Yang L, Wang Y, Xu H, Liu W, Zhang C, Wang C, Wang Z, Ma J, Liu Y. Color-Tunable ZnO/GaN Heterojunction LEDs Achieved by Coupling with Ag Nanowire Surface Plasmons. ACS APPLIED MATERIALS & INTERFACES 2018; 10:15812-15819. [PMID: 29671573 DOI: 10.1021/acsami.8b00940] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Color-tunable light-emitting devices (LEDs) have a great impact on our daily life. Herein, LEDs with tunable electroluminescence (EL) color were achieved via introducing Ag nanowires surface plasmons into p-GaN/n-ZnO film heterostructures. By optimizing the surface coverage density of coated Ag nanowires, the EL color was changed continuously from yellow-green to blue-violet. Transient-state and temperature-variable fluorescence emission characterizations uncovered that the spontaneous emission rate and the internal quantum efficiency of the near-UV emission were increased as a consequence of the resonance coupling interaction between Ag nanowires surface plasmons and ZnO excitons. This effect induces the selective enhancement of the blue-violet EL component but suppresses the defect-related yellow-green emission, leading to the observed tunable EL color. The proposed strategy of introducing surface plasmons can be further applied to many other kinds of LEDs for their selective enhancement of EL intensity and effective adjustment of the emission color.
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Li S, Gao Y, Chen X, Qin L, Cheng B, Wang S, Wang S, Zhao G, Liu K, Zhang N. Highly efficient isolation and release of circulating tumor cells based on size-dependent filtration and degradable ZnO nanorods substrate in a wedge-shaped microfluidic chip. Biomed Microdevices 2017; 19:93. [PMID: 29071494 DOI: 10.1007/s10544-017-0235-7] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
Abstract
Circulating tumor cells (CTCs) have been regarded as the major cause of metastasis, holding significant insights for tumor diagnosis and treatment. Although many efforts have been made to develop methods for CTC isolation and release in microfluidic system, it remains significant challenges to realize highly efficient isolation and gentle release of CTCs for further cellular and bio-molecular analyses. In this study, we demonstrate a novel method for CTC isolation and release using a simple wedge-shaped microfluidic chip embedding degradable znic oxide nanorods (ZnNRs) substrate. By integrating size-dependent filtration with degradable nanostructured substrate, the capture efficiencies over 87.5% were achieved for SKBR3, PC3, HepG2 and A549 cancer cells spiked in healthy blood sample with the flow rate of 100 μL min-1. By dissolving ZnNRs substrate with an extremely low concentration of phosphoric acid (12.5 mM), up to 85.6% of the captured SKBR3 cells were released after reverse injection with flow rate of 100 μL min-1 for 15 min, which exhibited around 73.6% cell viability within 1 h after release to around 93.9% after re-cultured for 3 days. It is conceivable that our microfluidic device has great potentials in carrying on cell-based biomedical studies and guiding individualized treatment in the future.
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Affiliation(s)
- Songzhan Li
- College of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan, Hubei, 430200, People's Republic of China
| | - Yifan Gao
- College of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan, Hubei, 430200, People's Republic of China
| | - Xiran Chen
- College of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan, Hubei, 430200, People's Republic of China
| | - Luman Qin
- College of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan, Hubei, 430200, People's Republic of China
| | - Boran Cheng
- Department of Oncology, Peking University Shenzhen Hospital, Shenzhen, Guangdong, 518036, People's Republic of China
| | - Shubin Wang
- Department of Oncology, Peking University Shenzhen Hospital, Shenzhen, Guangdong, 518036, People's Republic of China
| | - Shengxiang Wang
- College of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan, Hubei, 430200, People's Republic of China
| | - Guangxin Zhao
- College of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan, Hubei, 430200, People's Republic of China
| | - Kan Liu
- School of Life Science and Technology, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, People's Republic of China.
| | - Nangang Zhang
- College of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan, Hubei, 430200, People's Republic of China.
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Yang M, Hong SB, Yoon JH, Kim DS, Jeong SW, Yoo DE, Lee TJ, Lee KG, Lee SJ, Choi BG. Fabrication of Flexible, Redoxable, and Conductive Nanopillar Arrays with Enhanced Electrochemical Performance. ACS APPLIED MATERIALS & INTERFACES 2016; 8:22220-22226. [PMID: 27548355 DOI: 10.1021/acsami.6b06579] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Highly ordered and flexible nanopillar arrays have received considerable interest for many applications of electrochemical devices because of their unique mechanical and structural properties. Here, we report on highly ordered polyoxometalate (POM)-doped polypyrrole (Ppy) nanopillar arrays produced by soft lithography and subsequent electrodeposition. As-prepared POM-Ppy/nanopillar films show superior electrochemical performances for pseudocapacitor and enzymeless electrochemical sensor applications and good mechanical properties, which allowed them to be easily bent and twisted. Regarding electrochemical characteristics for pseudocapacitive electrodes, the POM-Ppy/nanopillar electrodes are capable of delivering high areal capacitance of 77.0 mF cm(-2), high rate performance, and good cycle life of ∼100% retention over 3500 cycles even when bent. Moreover, the study suggests that the POM-Ppy/nanopillar electrodes have an excellent electrocatalytic activity toward hydrogen.
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Affiliation(s)
- MinHo Yang
- Department of Materials Science and Engineering and Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign , Urbana, Illinois 61801, United States
| | - Seok Bok Hong
- Department of Chemical Engineering, Kangwon National University , Samcheok 25913, Republic of Korea
| | - Jo Hee Yoon
- Department of Chemical Engineering, Kangwon National University , Samcheok 25913, Republic of Korea
| | - Dong Seok Kim
- Department of Chemical Engineering, Kangwon National University , Samcheok 25913, Republic of Korea
| | | | | | | | | | | | - Bong Gill Choi
- Department of Chemical Engineering, Kangwon National University , Samcheok 25913, Republic of Korea
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Ren X, Hou H, Liu Z, Gao F, Zheng J, Wang L, Li W, Ying P, Yang W, Wu T. Shape-Enhanced Photocatalytic Activities of Thoroughly Mesoporous ZnO Nanofibers. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2016; 12:4007-4017. [PMID: 27337544 DOI: 10.1002/smll.201600991] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2016] [Revised: 05/26/2016] [Indexed: 06/06/2023]
Abstract
1D mesoporous materials have attracted extensive interest recently, owning to their fascinating properties and versatile applications. However, it remains as a grand challenge to develop a simple and efficient technique to produce oxide nanofibers with mesoporous architectures, controlled morphologies, large surface areas, and optimal performances. In this work, a facile foaming-assisted electrospinning strategy with foaming agent of tea saponin is used to produce thoroughly mesoporous ZnO nanofibers with high purity and controlled morphology. Interestingly, mesoporous fibers with elliptical cross-section exhibit the significantly enhanced photocatalytic activity for hydrogen production, as compared to the counterparts with circular and rectangular cross-sections, and they also perform better than the commercial ZnO nanopowders. The unexpected shape dependence of photocatalytic activities is attributed to the different stacking modes of the mesoporous fibers, and a geometrical model is developed to account for the shape dependence. This work represents an important step toward producing thoroughly mesoporous ZnO nanofibers with tailored morphologies, and the discovery that fibers with elliptical cross-section render the best performance provides a valuable guideline for improving the photocatalytic performance of such mesoporous nanomaterials.
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Affiliation(s)
- Xiaolong Ren
- Institute of Materials, Ningbo University of Technology, Ningbo, 315016, P. R. China
- School of Material Science and Engineering, China University of Mining and Technology, Xuzhou, 221116, P. R. China
| | - Huilin Hou
- Institute of Materials, Ningbo University of Technology, Ningbo, 315016, P. R. China
| | - Zhixiong Liu
- Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Fengmei Gao
- Institute of Materials, Ningbo University of Technology, Ningbo, 315016, P. R. China
| | - Jinju Zheng
- Institute of Materials, Ningbo University of Technology, Ningbo, 315016, P. R. China
| | - Lin Wang
- Institute of Materials, Ningbo University of Technology, Ningbo, 315016, P. R. China
| | - Wenge Li
- Merchant Marine College, Shanghai Maritime University, Shanghai, 201306, P. R. China
| | - Pengzhan Ying
- School of Material Science and Engineering, China University of Mining and Technology, Xuzhou, 221116, P. R. China
| | - Weiyou Yang
- Institute of Materials, Ningbo University of Technology, Ningbo, 315016, P. R. China
| | - Tom Wu
- Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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7
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Fang X, Wei Z, Yang Y, Chen R, Li Y, Tang J, Fang D, Jia H, Wang D, Fan J, Ma X, Yao B, Wang X. Ultraviolet Electroluminescence from ZnS@ZnO Core-Shell Nanowires/p-GaN Introduced by Exciton Localization. ACS APPLIED MATERIALS & INTERFACES 2016; 8:1661-1666. [PMID: 26710654 DOI: 10.1021/acsami.5b08961] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We investigate the electroluminescence (EL) from light emitting diodes (LEDs) of ZnO nanowires/p-GaN structure and ZnS@ZnO core-shell nanowires/p-GaN structure. With the increase of forward bias, the emission peak of ZnO nanowires/p-GaN structure heterojunction shows a blue-shift, while the ZnS@ZnO core-shell nanowires/p-GaN structure demonstrates a changing EL emission; the ultraviolet (UV) emission at 378 nm can be observed. This discrepancy is related to the localized states introduced by ZnS particles, which results in a different carrier recombination process near the interfaces of the heterojunction. The localized states capture the carriers in ZnO nanowires and convert them to localized excitons under high forward bias. A strong UV emission due to localized excitons can be observed. Our results indicated that utilizing localized excitons should be a new route toward ZnO-based ultraviolet LEDs with high efficiency.
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Affiliation(s)
- Xuan Fang
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology , 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology , 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Yahui Yang
- Department of Electrical and Electronic Engineering, South University of Science and Technology of China , Shenzhen, Guangdong 518055, P. R. China
| | - Rui Chen
- Department of Electrical and Electronic Engineering, South University of Science and Technology of China , Shenzhen, Guangdong 518055, P. R. China
| | - Yongfeng Li
- Key Laboratory of Physics and Technology for Advanced Batteries, Ministry of Education, College of Physics, JilinUniversity , Changchun 130012, P. R. China
| | - Jilong Tang
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology , 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Dan Fang
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology , 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Huimin Jia
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology , 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Dengkui Wang
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology , 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Jie Fan
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology , 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Xiaohui Ma
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology , 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Bin Yao
- Key Laboratory of Physics and Technology for Advanced Batteries, Ministry of Education, College of Physics, JilinUniversity , Changchun 130012, P. R. China
| | - Xiaohua Wang
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology , 7089 Wei-Xing Road, Changchun 130022, P. R. China
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Guo X, Tripp CP, Chen C, Wang Y, Yin S, Qin W. Temperature dependence of the photoluminescence from ZnO microrods prepared by a float zone method. CrystEngComm 2016. [DOI: 10.1039/c6ce00349d] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
ZnO microrods were grown with a high c-axis orientation. The PL spectra of the ZnO microrods at temperatures between 15 and 150 K were monitored to verify the peak assignments.
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Affiliation(s)
- Xingyuan Guo
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education)
- College of Physics
- Jilin University
- Changchun 130012, China
| | - Carl P. Tripp
- Laboratory for Surface Science and Technology and
- Department of Chemistry
- University of Maine
- Orono, USA
| | - Changfeng Chen
- Laboratory for Surface Science and Technology and
- Department of Chemistry
- University of Maine
- Orono, USA
| | - Yan Wang
- College of Chemistry
- Jilin University
- Changchun 130012, China
| | - Shengyan Yin
- State Key Laboratory on Integrated Optoelectronics
- College of Electronic Science and Engineering
- Jilin University
- Changchun, China
| | - Weiping Qin
- State Key Laboratory on Integrated Optoelectronics
- College of Electronic Science and Engineering
- Jilin University
- Changchun, China
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Fang X, Wei Z, Chen R, Tang J, Zhao H, Zhang L, Zhao D, Fang D, Li J, Fang F, Chu X, Wang X. Influence of Exciton Localization on the Emission and Ultraviolet Photoresponse of ZnO/ZnS Core-Shell Nanowires. ACS APPLIED MATERIALS & INTERFACES 2015; 7:10331-10336. [PMID: 25918945 DOI: 10.1021/acsami.5b01100] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
The structural and optical properties of ZnO and ZnO/ZnS core-shell nanowires grown by a wet chemical method are investigated. The near-bandgap ultraviolet (UV) emission of the ZnO nanowires was enhanced by four times after coating with ZnS. The enhanced emission was attributed to surface passivation of the ZnO nanowires and localized states introduced during ZnS growth. The emission of the ZnO and ZnO/ZnS core-shell nanowires was attributed to neutral donor-bound excitons and localized excitons, respectively. Localized states prevented excitons from diffusing to nonradiative recombination centers, so therefore contributed to the enhanced emission. Emission from the localized exciton was not sensitive to temperature, so emission from the ZnO/ZnS core-shell nanowires was more stable at higher temperature. UV photodetectors based on the ZnO and ZnO/ZnS core-shell nanowires were fabricated. Under UV excitation, the device based on the ZnO/ZnS core-shell nanowires exhibited a photocurrent approximately 40 times higher than that of the device based on the ZnO nanowires. The differing photoresponse of the detectors was consistent with the existence of surface passivation and localized states. This study provides a means for modifying the optical properties of ZnO materials, and demonstrates the potential of ZnO/ZnS core-shell nanowires in UV excitonic emission and detection.
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Affiliation(s)
- Xuan Fang
- †State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China
| | - Zhipeng Wei
- †State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China
| | - Rui Chen
- ‡Department of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055, People's Republic of China
| | - Jilong Tang
- †State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China
| | - Haifeng Zhao
- §Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, People's Republic of China
| | - Ligong Zhang
- §Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, People's Republic of China
| | - Dongxu Zhao
- §Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, People's Republic of China
| | - Dan Fang
- †State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China
| | - Jinhua Li
- †State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China
| | - Fang Fang
- †State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China
| | - Xueying Chu
- †State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China
| | - Xiaohua Wang
- †State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China
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