1
|
Zhao G, Zhao X, Zhang H, Lian Z, Zhao Y, Ming A, Lin Y. Silicon flower structures by maskless plasma etching. Heliyon 2023; 9:e22792. [PMID: 38125487 PMCID: PMC10730588 DOI: 10.1016/j.heliyon.2023.e22792] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/14/2023] [Revised: 10/17/2023] [Accepted: 11/20/2023] [Indexed: 12/23/2023] Open
Abstract
Silicon nano/microstructures are widely utilized in the semiconductor industry, and plasma etching is the most prominent method for fabricating silicon nano/microstructures. Among the variety of silicon nano/microstructures, black silicon with light-trapping properties has garnered broad interest from both the scientific and industrial communities. However, the fabrication mechanism of black silicon remains unclear, and the light absorption of black silicon only focuses on the near-infrared region thus far. Herein, we demonstrate that black silicon can be fabricated from individual flower-like silicon microstructures. Using fluorocarbon gases as etchants, silicon flower microstructures have been formed via maskless plasma etching. Black silicon forming from silicon flower microstructures exhibits strong absorption with wavelength from 0.25 μm to 20 μm. The result provides novel insight into the understanding of the plasma etching mechanism in addition to offering further significant practical applications for device manufacturing.
Collapse
Affiliation(s)
- Geng Zhao
- Institute of Solid State Physics, College of Physics and Electronic Science, Shanxi Province Key Laboratory of Microstructure Electromagnetic Functional Materials, Datong University, Datong, 037054, Shanxi Province, China
- Department of Physics, Fudan University, Shanghai, 200433, China
- Laboratory of Micro-Nano Optoelectronic Materials and Devices, Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
| | - Xiaoyan Zhao
- Department of Semiconductor Etching, NAURA Technology Group Co., Ltd., Beijing, 100176, China
| | - Haimiao Zhang
- Department of Semiconductor Etching, NAURA Technology Group Co., Ltd., Beijing, 100176, China
| | - Ziwei Lian
- State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing, 101402, China
| | - Yongmin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing, 101402, China
| | - Anjie Ming
- State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing, 101402, China
| | - Yuanwei Lin
- Department of Semiconductor Etching, NAURA Technology Group Co., Ltd., Beijing, 100176, China
| |
Collapse
|
2
|
Cao Y, Xu X, Shen L, Zhang D, Zheng J, Gong X. Origins of the Photocurrent Multiplication Effect in the Polythiophene-Based Photodetectors. Macromol Rapid Commun 2023; 44:e2100928. [PMID: 35170120 DOI: 10.1002/marc.202100928] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/29/2021] [Revised: 02/02/2022] [Indexed: 01/11/2023]
Abstract
The photocurrent multiplication (PM) effect has been used to boost the device performance of polymer-based photodetectors (PDs), but its origin is rarely addressed. In this study, the origins of the PM effect in polymer PDs based on the P3HT:PC71 BM bulk heterojunction (BHJ) composite thin film, where P3HT is poly(3-hexylthiophene), and PC71 BM is [6,6]phenyl-C71 -butyric acid methyl ester, through both computational simulation and experimental investigation are reported. Systematic studies indicate that two key factors play an important role in the realization of the PM effect in polymer PDs. One factor is the work function of the metal electrode, and the other is the PC71 BM aggregations at the interface between the P3HT:PC71 BM BHJ composite thin film and the metal electrode. Moreover, the results from both experimental and computational simulation indicate that the values of the current density under light illumination minus the current density in the dark of polymer PDs are increased simultaneously along with the reduction of the thickness of the P3HT:PC71 BM BHJ composite thin film. The results provide an understanding of the PM effect in polymer PDs and guidance for the development of high-performance polymer PDs based on BHJ composite thin film.
Collapse
Affiliation(s)
- Yu Cao
- School of Polymer Science and Polymer Engineering and 2) Department of Chemical, Biomolecular and Corrosion Engineering, College of Engineering and Polymer Science, The University of Akron, Akron, OH, 44325, USA
| | - Xinjian Xu
- School of Polymer Science and Polymer Engineering and 2) Department of Chemical, Biomolecular and Corrosion Engineering, College of Engineering and Polymer Science, The University of Akron, Akron, OH, 44325, USA
| | - Lening Shen
- School of Polymer Science and Polymer Engineering and 2) Department of Chemical, Biomolecular and Corrosion Engineering, College of Engineering and Polymer Science, The University of Akron, Akron, OH, 44325, USA
| | - Dong Zhang
- Department of Chemical, Biomolecular and Corrosion Engineering, College of Engineering and Polymer Science, The University of Akron, Akron, OH, 44325, USA
| | - Jie Zheng
- Department of Chemical, Biomolecular and Corrosion Engineering, College of Engineering and Polymer Science, The University of Akron, Akron, OH, 44325, USA
| | - Xiong Gong
- School of Polymer Science and Polymer Engineering and 2) Department of Chemical, Biomolecular and Corrosion Engineering, College of Engineering and Polymer Science, The University of Akron, Akron, OH, 44325, USA.,Department of Chemical, Biomolecular and Corrosion Engineering, College of Engineering and Polymer Science, The University of Akron, Akron, OH, 44325, USA
| |
Collapse
|
3
|
Lin G, Lin Y, Sun B. Transparent graphene electrodes based hybrid perovskites photodetectors with broad spectral response from UV-visible to near-infrared. NANOTECHNOLOGY 2021; 33:085204. [PMID: 34788747 DOI: 10.1088/1361-6528/ac3aaa] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2021] [Accepted: 11/17/2021] [Indexed: 06/13/2023]
Abstract
A new class of transparent graphene electrode based organic-inorganic halide perovskite photodetectors with broad spectral response is developed. These ultrasensitive devices exhibit high ON/OFF current ratio, high linear dynamic range, broad spectral range, excellent detection for weak light and easy fabrication with low-cost. Their semi-transparent feature and distinct photodetecting function for both sides would provide new applications affecting our daily lives.
Collapse
Affiliation(s)
- Guoming Lin
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS), Fuzhou, Fujian 350002, People's Republic of China
- Department of Physics, National University of Singapore, 117551, Singapore
- Center for Biosensing Sciences, Department of Biological Sciences, National University of Singapore, 117557, Singapore
| | - Yuanwei Lin
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
- Center for Nanoscience and Nanotechnology, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Baoyun Sun
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| |
Collapse
|
4
|
Lin Y, Yuan R, Zhou C, Dong Z, Su Z, Zhang H, Chen Z, Li Y, Wang C. The application of the scallop nanostructure in deep silicon etching. NANOTECHNOLOGY 2020; 31:315301. [PMID: 32289763 DOI: 10.1088/1361-6528/ab88f0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Micro/nanostructures with high aspect ratios in silicon wafers obtained by plasma etching are of great significance in device fabrication. In most cases, the scallop nanostructure in deep silicon etching should be suppressed. However, the scallop nanostructure could be applied in electronic device fabrication as characteristic information, which indicates the balance between deposition and etching. In this work, the applications of scallop nanostructures in etching process optimization and environmental protection are demonstrated. In addition, the minimum effect of the cycle time on the scallop size is reported for the first time. These results could bring new thoughts to the electronic devices related fields, such as micro-electro-mechanical systems (MEMS), silicon capacitors and advanced packaging.
Collapse
Affiliation(s)
- Yuanwei Lin
- College of Resources and Environment, Fujian Agriculture and Forestry University, Fuzhou 350002, Fujian, People's Republic of China. Department of Semiconductor Etching, NAURA Technology Group Co., Ltd, Beijing 100176, People's Republic of China
| | | | | | | | | | | | | | | | | |
Collapse
|
5
|
Kim H, Kim W, Park J, Lim N, Lee R, Cho SJ, Kumaresan Y, Oh MK, Jung GY. Surface conversion of ZnO nanorods to ZIF-8 to suppress surface defects for a visible-blind UV photodetector. NANOSCALE 2018; 10:21168-21177. [PMID: 30411778 DOI: 10.1039/c8nr06701e] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
ZnO nanomaterials are promising building blocks for an efficient UV photodetector; however, their slow sensing behavior and undesired response to visible light, which are attributed to surface defects, such as oxygen or zinc vacancies, are challenges that remain to be addressed. Here, we transformed the ZnO nanorod surface into a zeolitic imidazolate framework-8 (ZIF-8) to eliminate ZnO surface defects. Vertical-type photodetectors were fabricated incorporating a Schottky junction at the ZIF-8/gold (Au) top electrode and could respond to UV light with a rapid response and recovery (1-2 s) and demonstrated a UV-to-visible rejection ratio in the order of 103, qualifying them as efficient visible-blind UV photodetectors. It is noteworthy that the ZIF-8 layer effectively separated the photogenerated electron-hole pairs, and thus reduced their recombination probability. The enhanced photodetector displayed excellent figures-of-merit: a responsivity of 291 A W-1 and a detectivity of 5.9 × 1013 cm Hz1/2 W-1 under illumination at 295 nm.
Collapse
Affiliation(s)
- Hyeonghun Kim
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea.
| | | | | | | | | | | | | | | | | |
Collapse
|
6
|
Jia C, Ma B, Xin N, Guo X. Carbon Electrode-Molecule Junctions: A Reliable Platform for Molecular Electronics. Acc Chem Res 2015; 48:2565-75. [PMID: 26190024 DOI: 10.1021/acs.accounts.5b00133] [Citation(s) in RCA: 86] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
The development of reliable approaches to integrate individual or a small collection of molecules into electrical nanocircuits, often termed "molecular electronics", is currently a research focus because it can not only overcome the increasing difficulties and fundamental limitations of miniaturization of current silicon-based electronic devices, but can also enable us to probe and understand the intrinsic properties of materials at the atomic- and/or molecular-length scale. This development might also lead to direct observation of novel effects and fundamental discovery of physical phenomena that are not accessible by traditional materials or approaches. Therefore, researchers from a variety of backgrounds have been devoting great effort to this objective, which has started to move beyond simple descriptions of charge transport and branch out in different directions, reflecting the interdisciplinarity. This Account exemplifies our ongoing interest and great effort in developing efficient lithographic methodologies capable of creating molecular electronic devices through the combination of top-down micro/nanofabrication with bottom-up molecular assembly. These devices use nanogapped carbon nanomaterials (such as single-walled carbon nanotubes (SWCNTs) and graphene), with a particular focus on graphene, as point contacts formed by electron beam lithography and precise oxygen plasma etching. Through robust amide linkages, functional molecular bridges terminated with diamine moieties are covalently wired into the carboxylic acid-functionalized nanogaps to form stable carbon electrode-molecule junctions with desired functionalities. At the macroscopic level, to improve the contact interface between electrodes and organic semiconductors and lower Schottky barriers, we used SWCNTs and graphene as efficient electrodes to explore the intrinsic properties of organic thin films, and then build functional high-performance organic nanotransistors with ultrahigh responsivities. At the molecular level, to form robust covalent bonds between electrodes and molecules and improve device stability, we developed a reliable system to immobilize individual molecules within a nanoscale gap of either SWCNTs or graphene through covalent amide bond formation, thus affording two classes of carbon electrode-molecule single-molecule junctions. One unique feature of these devices is the fact that they contain only one or two molecules as conductive elements, thus forming the basis for building new classes of chemo/biosensors with ultrahigh sensitivity. We have used these approaches to reveal the dependence of the charge transport of individual metallo-DNA duplexes on π-stacking integrity, and fabricate molecular devices capable of realizing label-free, real-time electrical detection of biological interactions at the single-event level, or switching their molecular conductance upon exposure to external stimuli, such as ion, pH, and light. These investigations highlight the unique advantages and importance of these universal methodologies to produce functional carbon electrode-molecule junctions in current and future researches toward the development of practical molecular devices, thus offering a reliable platform for molecular electronics and the promise of a new generation of multifunctional integrated circuits and sensors.
Collapse
Affiliation(s)
- Chuancheng Jia
- Center
for Nanochemistry, Beijing National Laboratory for Molecular Sciences,
State Key Laboratory for Structural Chemistry of Unstable and Stable
Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Bangjun Ma
- Center
for Nanochemistry, Beijing National Laboratory for Molecular Sciences,
State Key Laboratory for Structural Chemistry of Unstable and Stable
Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Na Xin
- Center
for Nanochemistry, Beijing National Laboratory for Molecular Sciences,
State Key Laboratory for Structural Chemistry of Unstable and Stable
Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Xuefeng Guo
- Center
for Nanochemistry, Beijing National Laboratory for Molecular Sciences,
State Key Laboratory for Structural Chemistry of Unstable and Stable
Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Department
of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, P. R. China
| |
Collapse
|