Ferroelectric BiFeO3 as an Oxide Dye in Highly Tunable Mesoporous All-Oxide Photovoltaic Heterojunctions

Colossal Ferroelectric Photovoltaic Effect in Inequivalent Double-Perovskite Bi2FeMnO6 Thin Films

Double perovskite films have been extensively studied for ferroelectric order, ferromagnetic order, and photovoltaic effects. The customized ion combinations and ordered ionic arrangements provide unique opportunities for bandgap engineering. Here, a synergistic strategy to induce chemical strain and charge compensation through inequivalent element substitution is proposed. A-site substitution of the barium ion is used to modify the chemical valence and defect density of the two B-site elements in Bi2FeMnO6 double perovskite epitaxial thin films. We dramatically increased the ferroelectric photovoltaic effect to ∼135.67 μA/cm2 from 30.62 μA/cm2, which is the highest in ferroelectric thin films with a thickness of less than 100 nm under white-light LED irradiation. More importantly, the ferroelectric polarization can effectively improve the photovoltaic efficiency of more than 5 times. High-resolution HAADF-STEM, synchrotron-based X-ray diffraction and absorption spectroscopy, and DFT calculations collectively demonstrate that inequivalent ion plays a dual role of chemical strain (+1.92 and -1.04 GPa) and charge balance, thereby introducing lattice distortion effects. The reduction of the oxygen vacancy density and the competing Jahn-Teller distortion of the oxygen octahedron are the main phenomena of the change in electron-orbital hybridization, which also leads to enhanced ferroelectric polarization values and optical absorption. The inequivalent strategy can be extended to other double perovskite systems and applied to other functional materials, such as photocatalysis for efficient defect control.

Self-Powered Bipolar Photodetector Based on a Ce-BaTiO3 PTCR Semiconductor for Logic Gates

Ferroelectric materials bring new opportunities for self-powdered photodetectors, taking advantage of their anomalous bulk photovoltaic effect. However, ferroelectric-based photodetectors suffer from relatively poor responsivity and detectivity due to obstacles of low electrical conductivity and low photoelectric conversion ability. The present work proposes a strategy based on heterovalent ion Ce-doping into BaTiO₃ (Ce-BTO) that gives rise to a good room temperature conductivity combined with a significant PTCR (positive temperature coefficient of resistivity) effect. By utilizing a Ce-BTO PTCR semiconductor, a high-performance self-powered photodetector ITO/Ce-BTO/Ag is fabricated, demonstrating a polarity-switchable photoresponse with the change of wavelength due to the competition between hot electrons induced by the Ag plasmonic effect and electron-hole pairs separated by a Schottky barrier. Moreover, benefiting from the reduced bandgap and the introduced impurity states, good responsivity (9.85 × 10^-5 A/W) and detectivity (1.25 × 10¹⁰ Jones) as well as fast response/recovery time (83/47 ms) is achieved under 450 nm illumination. Finally, four representative logic gates ("OR", "AND", "NOR", and "NAND") are demonstrated with one photodetector via the bipolar photoresponse. This work opens an avenue to promote the application of PTCR semiconductors in optoelectronics, offering a conceivable means toward high-performance self-powered photodetectors.

Piezoelectric effect enhanced photocatalysis in environmental remediation: State-of-the-art techniques and future scenarios

Photocatalysis has been widely used as an advanced oxidation process to control pollutants effectively. However, environmental photocatalysis' decontamination efficiency is restricted to the photogenerated electron-hole pairs' rapid recombination. Recently, emerging investigations have been directed to generate internal electric field by piezoelectric effect to enhance the separation efficiency of photogenerated charge carriers for better photocatalytic performance; however, there are still huge knowledge gaps on the rational application of piezo-photocatalysis in environmental remediation and disinfection. Thus, we have conducted a comprehensive review to better understand the physicochemical properties of piezoelectric materials (non-centrosymmetric crystal structures, piezoelectric coefficient, Young's modulus, and etc.) and current study states. We also elucidated the strategy of piezo-photo catalysis system constructions (mono-component, core-shell structure, and etc.) and underlying mechanisms of enhanced remediation performance. Addressing the current challenges and future scenarios (degradation of organic pollutants, disinfection, and etc.), the present review would shed light on the advanced wastewater treatment development towards sustainable control of emerging containments.

Approaching Charge Separation Efficiency to Unity without Charge Recombination

Improving the efficiency of charge separation (CS) and charge transport (CT) is essential for almost all optoelectronic applications, yet its maximization remains a big challenge. Here we propose a conceptual strategy to achieve CS efficiency close to unity and simultaneously avoid charge recombination (CR) during CT in a ferroelectric polar-discontinuity (PD) superlattice structure, as demonstrated in (BaTiO_{3})_{m}/(BiFeO_{3})_{n}, which is fundamentally different from the existing mechanisms. The competition of interfacial dipole and ferroelectric PD induces opposite band bending in BiFeO_{3} and BaTiO_{3} sublattices. Consequently, the photoexcited electrons (e) and holes (h) in individual sublattices move forward to the opposite interfaces forming electrically isolated e and h channels, leading to a CS efficiency close to unity. Importantly, the spatial isolation of conduction channels in (BaTiO_{3})_{m}/(BiFeO_{3})_{n} enable suppression of CR during CT, thus realizing a unique band diagram for spatially orthogonal CS and CT. Remarkably, (BaTiO_{3})_{m}/(BiFeO_{3})_{n} can maintain a high photocurrent and large band gap simultaneously. Our results provide a fascinating illumination for designing artificial heterostructures toward ideal CS and CT in optoelectronic applications.

Enhanced photovoltaic response of lead-free ferroelectric solar cells based on (K,Bi)(Nb,Yb)O3 films

Herein, we firstly present the (K,Bi)(Nb,Yb)O₃ inorganic ferroelectric photovoltaic (FPV) film, in which a nearly ideal bandgap of ∼1.45 eV in the center of the solar spectrum and the co-existence of oxygen vacancies as well as ferroelectric polarization were confirmed. Furthermore, a novel cell structure is successfully fabricated by combining charge-transporting TiO₂ nanoparticles, the perovskite sensitizer and a light-absorbing oxide hole p-type NiO conductor to realize a 1 V open circuit voltage, which can be increased to 1.56 V by adjusting the test bias near the coercive voltage. Additionally, under simulated standard AM 1.5G illumination, a fill factor of 86% and a power conversion efficiency of 0.85% are achieved via oxygen vacancy electromigration and polarization switching modulation. It is shown that the obtained power conversion efficiency is one to three orders of magnitude higher than those of pure BiFeO₃ and Pb(Zr,Ti)O₃. The enhanced PV effects are well elucidated using the transformation from a Schottky-like barrier to Ohmic contacts caused by polarization switching and oxygen vacancies. Building upon the above studies, deep insights into the bandgap tunability and PV effects in ferroelectric films with high oxygen vacancy concentration are provided and will facilitate a new versatile route for exploring high PV performance based on inorganic ferroelectric films.

Progress in BiFeO3-based heterostructures: materials, properties and applications

BiFeO3-based heterostructures have attracted much attention for potential applications due to their room-temperature multiferroic properties, proper band gaps and ultrahigh ferroelectric polarization of BiFeO3, such as data storage, optical utilization in visible light regions and synapse-like function. Here, this work aims to offer a systematic review on the progress of BiFeO3-based heterostructures. In the first part, the optical, electric, magnetic, and valley properties and their interactions in BiFeO3-based heterostructures are briefly reviewed. In the second part, the morphologies of BiFeO3 and medium materials in the heterostructures are discussed. Particularly, in the third part, the physical properties and underlying mechanism in BiFeO3-based heterostructures are discussed thoroughly, such as the photovoltaic effect, electric field control of magnetism, resistance switching, and two-dimensional electron gas and valley characteristics. The fourth part illustrates the applications of BiFeO3-based heterostructures based on the materials and physical properties discussed in the second and third parts. This review also includes a future prospect, which can provide guidance for exploring novel physical properties and designing multifunctional devices.

Tuning Photovoltaic Performance of Perovskite Nickelates Heterostructures by Changing the A-Site Rare-Earth Element

Perovskite rare-earth nickelates (RNiO₃) have attracted much attention because of their exotic physical properties and rich potential applications. Here, we report systematic tuning of the electronic structures of RNiO₃ (R = Nd, Sm, Gd, and Lu) by isovalent A-site substitution. By integrating RNiO₃ thin films with Nb-doped SrTiO₃ (NSTO), p-n heterojunction photovoltaic cells have been prepared and their performance has been investigated. The open-circuit voltage increases monotonically with decreasing A-site cation radius. This change results in a downward shift of the Fermi level and induces an increase in the built-in potential at the RNiO₃/NSTO heterojunction, with LuNiO₃/NSTO showing the largest open-circuit voltage. At the same time, the short-circuit current initially increases upon changing the A-site element from Nd to Sm. However, the larger bandgaps of GdNiO₃ and LuNiO₃ reduce light absorption which in turn induces a decrease in the short-circuit current. A power conversion efficiency of 1.13% has been achieved by inserting an ultrathin insulating SrTiO₃ layer at the SmNiO₃/NSTO interface. Our study illustrates how changing the A-site cation is an effective strategy for tuning photovoltaic performance and sheds light on which A-site element is the best for photovoltaic applications, which can significantly increase the applicability of nickelates in optoelectric devices.

Epitaxial Bi2FeCrO6 Multiferroic Thin-Film Photoanodes with Ultrathin p-Type NiO Layers for Improved Solar Water Oxidation

The photoelectric properties of multiferroic double-perovskite Bi₂FeCrO₆ (BFCO), such as above-band gap photovoltages, switchable photocurrents, and bulk photovoltaic effects, have recently been explored for potential applications in solar technology. Here, we report the fabrication of photoelectrodes based on n-type ferroelectric (FE) semiconductor BFCO heterojunctions coated with p-type transparent conducting oxides (TCOs) by pulsed laser deposition and their application for photoelectrochemical (PEC) water oxidation. The photocatalytic properties of the bare BFCO photoanodes can be improved by controlling the FE polarization state. However, the charge recombination as well as the limited charge transfer kinetics in the photoanode/electrolyte cause major energy loss and thus hinder the PEC performance. We show that this problem may be addressed by the deposition of an ultrathin p-type NiO layer on the photoanode to enhance the charge transport kinetics and reduce charge recombination at surface-trapped states for increased surface band bending. A fourfold enhancement of photocurrent density, up to 0.4 mA cm^-2 (at +1.23 V vs RHE), a best performance of stability over 4 h, and a high incident photon-to-current efficiency (∼3.7%) were achieved under 1 sun illumination in such p-NiO/n-BFCO heterojunction photoanodes. These studies reveal the optimization of PEC performance by polarization switching of BFCO and the successful achievement of p-TCOs/n-FE heterojunction photoanodes that are able to sustain water oxidation that is stable for many hours.

Band Gap Tuning of Solution-Processed Ferroelectric Perovskite BiFe1-x Co x O3 Thin Films

Ferroelectric perovskite oxides are emerging as a promising photoactive layer for photovoltaic applications because of their very high stability and their alternative ferroelectricity-related mechanism for solar energy conversion that could lead to extraordinarily high efficiencies. One of the biggest challenges so far is to reduce their band gap toward the visible region while simultaneously retaining ferroelectricity. To address these two issues, herein an elemental composition engineering of BiFeO₃ is performed by substituting Fe by Co cations, as a means to tune the characteristics of the transition metal-oxygen bond. We demonstrate by solution processing the formation of epitaxial, pure phase, and stable BiFe_1-x Co _x O₃ thin films for x ≤ 0.3 and film thickness up to 100 nm. Importantly, the band gap can be tuned from 2.7 to 2.3 eV upon cobalt substitution while simultaneously enhancing ferroelectricity. As a proof of concept, nonoptimized vertical devices have been fabricated and, reassuringly, the electrical photoresponse in the visible region of the Co-substituted phase is improved with respect to the unsubstituted oxide.

Photovoltaic Effect of a Ferroelectric-Luminescent Heterostructure under Infrared Light Illumination

In this report, a ferroelectric-luminescent heterostructure is designed to convert infrared light into electric power. We use BiFeO₃ (BFO) as the ferroelectric layer and Y₂O₃:Yb,Tm (YOT) as the upconversion layer. Different from conventional ferroelectric materials, this heterostructure exhibits switchable and stable photovoltaic effects under 980 nm illumination, whose energy is much lower than the band gap of BFO. The energy transfer mechanism in this heterostructure is therefore studied carefully. It is found that a highly efficient nonradiative energy transfer process from YOT to BFO plays a critical role in achieving the below-band-gap photon-excited photovoltaic effects in this heterostructure. Our results also indicate that by introducing asymmetric electrodes, both the photovoltage and photocurrent are further enhanced when the built-in field and the depolarization field are aligned. The construction of ferroelectric-luminescent heterostructure is consequently proposed as a promising route to enhance the photovoltaic effects of ferroelectric materials by extending the absorption of the solar spectrum.

Highly Sensitive Switchable Heterojunction Photodiode Based on Epitaxial Bi2FeCrO6 Multiferroic Thin Films

Perovskite multiferroic oxides are promising materials for the realization of sensitive and switchable photodiodes because of their favorable band gap (<3.0 eV), high absorption coefficient, and tunable internal ferroelectric (FE) polarization. A high-speed switchable photodiode based on multiferroic Bi₂FeCrO₆ (BFCO)/SrRuO₃ (SRO)-layered heterojunction was fabricated by pulsed laser deposition. The heterojunction photodiode exhibits a large ideality factor ( n = ∼5.0) and a response time as fast as 68 ms, thanks to the effective charge carrier transport and collection at the BFCO/SRO interface. The diode can switch direction when the electric polarization is reversed by an external voltage pulse. The time-resolved photoluminescence decay of the device measured at ∼500 nm demonstrates an ultrafast charge transfer (lifetime = ∼6.4 ns) in BFCO/SRO heteroepitaxial structures. The estimated responsivity value at 500 nm and zero bias is 0.38 mA W^-1, which is so far the highest reported for any FE thin film photodiode. Our work highlights the huge potential for using multiferroic oxides to fabricate highly sensitive and switchable photodiodes.

Heterostructured TiO2/NiTiO3 Nanorod Arrays for Inorganic Sensitized Solar Cells with Significantly Enhanced Photovoltaic Performance and Stability

Organic dyes used in the conventional dye-sensitized solar cells (DSSCs) suffer from poor light stability and high cost. In this work, we demonstrate a new inorganic sensitized solar cell based on ordered one-dimensional semiconductor nanorod arrays of TiO₂/NiTiO₃ (NTO) heterostructures prepared via a facile two-step hydrothermal approach. The semiconductor heterostructure arrays are highly desirable and promising for DSSCs because of their direct charge transport capability and slow charge recombination rate. The low-cost NTO inorganic semiconductor possesses an appropriate band gap that matches well with TiO₂, which behaves like a "dye" to enable efficient light harvesting and fast electron-hole separation. The solar cells constructed by the ordered TiO₂/NTO heterostructure photoanodes show a significantly improved power conversion efficiency, high fill factor, and more promising, outstanding life stability. The present work will open up an avenue to design heterostructured inorganics for high-performance solar cells.

Tunable Valley and Spin Polarizations in BiXO3/BiIrO3 (X = Fe, Mn) Ferroelectric Superlattices

The generation and modulation on valley and spin degrees of freedom are essential for multifunctional electronic devices. Herewith, the electronic structures in BiXO₃/BiIrO₃ (X = Fe, Mn) ferroelectric superlattices are studied by first-principles calculations with spin-orbital coupling. Different from the previous BiAlO₃/BiIrO₃ system, both valley and spin polarizations in bilayered BiIrO₃ are achieved in BiXO₃/BiIrO₃ superlattices, where the spin polarization in the valley can be engineered by the spin orientation of Fe or Mn owing to the xy-plane orbitals. Especially, the relatively parallel and antiparallel directions of ferroelectric polarization in BiFeO₃ and BiIrO₃ can switch the valley injection in BiFeO₃/BiIrO₃ superlattices. Overall, the tunable valley and spin polarizations in BiFeO₃/BiIrO₃ ferroelectric superlattices pave a way for developing nonvolatile data memories and valley-spin devices.

Toward Switchable Photovoltaic Effect via Tailoring Mobile Oxygen Vacancies in Perovskite Oxide Films

The defect chemistry of perovskite oxides involves the cause to most of their abundant functional properties, including interface magnetism, charge transport, ionic exchange, and catalytic activity. The possibility to achieve dynamic control over oxygen anion vacancies offers a unique opportunity for the development of appealing switchable devices, which at present are commonly based on ferroelectric materials. Herein, we report the discovery of a switchable photovoltaic effect, that the sign of the open voltage and the short circuit current can be reversed by inverting the polarity of the applied field, upon electrically tailoring the distribution of oxygen vacancies in perovskite oxide films. This phenomenon is demonstrated in lateral photovoltaic devices based on both ferroelectric BiFeO₃ and paraelectric SrTiO₃ films, under a reversed applied field whose magnitude is much smaller than the coercivity value of BiFeO₃. The migration of oxygen vacancies was directly observed by employing an advanced annular bright-field scanning transmission electron microscopy technique with in situ biasing equipment. We conclude that the band bending induced by the motion of oxygen vacancies is the driving force for the reversible switching between two photovoltaic states. The present work can provide an active path for the design of novel switchable photovoltaic devices with a wide range of transition metal oxides in terms of the ionic degrees of freedom.