Shape Controlled Plasmonic Sn Doped CdO Colloidal Nanocrystals: A Synthetic Route to Maximize the Figure of Merit of Transparent Conducting Oxide

Degenerately doped metal oxide nanocrystals for infrared light harvesting: insight into their plasmonic properties and future perspectives

The tuneability of the localized surface plasmon resonance (LSPR) of degenerately doped metal oxide (MOX) nanocrystals (NCs) over a wide range of the infrared (IR) region by controlling NC size and doping content offers a unique opportunity to develop a future generation of optoelectronic and photonic devices like IR photodetectors and sensors. The central aim of this review article is to highlight the distinctive and remarkable plasmonic properties of degenerately or heavily doped MOX nanocrystals by reviewing the comprehensive literature reported so far. In particular, the literature of each MOX NC, i.e. ZnO, CdO, In2O3, and WO3 doped with different dopants, is discussed separately. In addition to discussion of the most commonly used colloidal synthesis approaches, the ultrafast dynamics of charge carriers in NCs and the extraction of LSPR-assisted hot-carriers are also discussed in detail. Finally, future prospective applications of MOX NCs in IR photodetectors and photovoltaic (PV) self-powered chemical sensors are also presented.

Full-spectrum plasmonic semiconductors for photocatalysis

Localized surface plasmon resonance (LSPR) of noble metal nanoparticles can focus surrounding light onto the particle surface to boost photochemical reactions and solar energy utilization. However, the rarity and high cost of noble metals limit their applications in plasmonic photocatalysis, forcing researchers to seek low-cost alternatives. Recently, some heavily doped semiconductors with high free carrier density have garnered attention due to their metal-like LSPR properties. However, plasmonic semiconductors have complex surface structures characterized by the presence of a depletion layer, which poses challenges for active site exposure and hot carrier transfer, resulting in low photocatalytic activity. In this review, we introduce the essential characteristics and types, synthesis methods, and characterization techniques of full-spectrum plasmonic semiconductors, elucidate the mechanism of full-spectrum nonmetallic plasmonic photocatalysis, including the local electromagnetic field, hot carrier generation and transfer, the photothermal effect, and the solutions for the surface depletion layer, and summarize the applications of plasmonic semiconductors in photocatalytic environmental remediation, CO2 reduction, H2 generation, and organic transformations. Finally, we provide a perspective on full-spectrum plasmonic photocatalysis, aiming to guide the design and development of plasmonic photocatalysts.

Novel Mg- and Ga-doped ZnO/Li-Doped Graphene Oxide Transparent Electrode/Electron-Transporting Layer Combinations for High-Performance Thin-Film Solar Cells

Herein, a novel combination of Mg- and Ga-co-doped ZnO (MGZO)/Li-doped graphene oxide (LGO) transparent electrode (TE)/electron-transporting layer (ETL) has been applied for the first time in Cu₂ ZnSn(S,Se)₄ (CZTSSe) thin-film solar cells (TFSCs). MGZO has a wide optical spectrum with high transmittance compared to that with conventional Al-doped ZnO (AZO), enabling additional photon harvesting, and has a low electrical resistance that increases electron collection rate. These excellent optoelectronic properties significantly improved the short-circuit current density and fill factor of the TFSCs. Additionally, the solution-processable alternative LGO ETL prevented plasma-induced damage to chemical bath deposited cadmium sulfide (CdS) buffer, thereby enabling the maintenance of high-quality junctions using a thin CdS buffer layer (≈30 nm). Interfacial engineering with LGO improved the V_oc of the CZTSSe TFSCs from 466 to 502 mV. Furthermore, the tunable work function obtained through Li doping generated a more favorable band offset in CdS/LGO/MGZO interfaces, thereby, improving the electron collection. The MGZO/LGO TE/ETL combination achieved a power conversion efficiency of 10.67%, which is considerably higher than that of conventional AZO/intrinsic ZnO (8.33%).

Properties, fabrication and applications of plasmonic semiconductor nanocrystals

We highlight three widely explored oxide-based plasmonic materials, including H_xMoO_3−y, H_xWO_3−y, and Mo_xW_1−xO_3−y, and their applications in catalysis.

Instantaneous Semiconductor-to-Conductor Transformation of a Transparent Oxide Semiconductor a-InGaZnO at 45 °C

The emphasis on ubiquitous technology means that future technological applications will depend heavily on transparent conducting materials. To facilitate truly ubiquitous applications, transparent conductors should be fabricated at low temperatures (<50 °C). Here, we demonstrate an instantaneous (<100 ns) and low-temperature (<45 °C at the substrate) method, excimer laser irradiation, for the transformation of an a-InGaZnO semiconductor into a transparent highly conductive oxide with performance rivaling traditional and emerging transparent conductors. Our analysis shows that the instantaneous and substantial conductivity enhancement is due to the generation of a large amount of oxygen vacancies in a-InGaZnO after irradiation. The method's combination of low temperature, extremely rapid process, and applicability to other materials will create a new class of transparent conductors for the high-throughput roll-to-roll fabrication of future flexible devices.

Efficient Charge Separation in Plasmonic ZnS@Sn:ZnO Nanoheterostructure: Nanoscale Kirkendall Effect and Enhanced Photophysical Properties

Tetravalent Sn doped ZnO nanocrystals show excellent plasmonic absorbance in the visible region. Plasmonic ZnS@Sn:ZnO core-shell heterostructures have been synthesized by the anion exchange process where the O^2- is exchanged by S^2- anion. An increase of sulfur concentration induces interior hollow structures arising from the different diffusion rates of O^2- and S^2- ions. Gradual transformation of wurtztie ZnO nanocrystals in the anion exchange process stabilizes the wurtzite crystalline phase of ZnS. Carrier concentration and various types of intrinsic defect states in both ZnO and ZnS result in ultraviolet, blue, and green emissions. The coexistence of exciton-plasmon coupling in the same nanoparticle and efficient electron-hole separation in type II heterostructure increases the photocatalytic activity and photo current gain.

Localized Surface Plasmon Resonance in Semiconductor Nanocrystals

Localized surface plasmon resonance (LSPR) in semiconductor nanocrystals (NCs) that results in resonant absorption, scattering, and near field enhancement around the NC can be tuned across a wide optical spectral range from visible to far-infrared by synthetically varying doping level, and post synthetically via chemical oxidation and reduction, photochemical control, and electrochemical control. In this review, we will discuss the fundamental electromagnetic dynamics governing light matter interaction in plasmonic semiconductor NCs and the realization of various distinctive physical properties made possible by the advancement of colloidal synthesis routes to such NCs. Here, we will illustrate how free carrier dielectric properties are induced in various semiconductor materials including metal oxides, metal chalcogenides, metal nitrides, silicon, and other materials. We will highlight the applicability and limitations of the Drude model as applied to semiconductors considering the complex band structures and crystal structures that predominate and quantum effects that emerge at nonclassical sizes. We will also emphasize the impact of dopant hybridization with bands of the host lattice as well as the interplay of shape and crystal structure in determining the LSPR characteristics of semiconductor NCs. To illustrate the discussion regarding both physical and synthetic aspects of LSPR-active NCs, we will focus on metal oxides with substantial consideration also of copper chalcogenide NCs, with select examples drawn from the literature on other doped semiconductor materials. Furthermore, we will discuss the promise that LSPR in doped semiconductor NCs holds for a wide range of applications such as infrared spectroscopy, energy-saving technologies like smart windows and waste heat management, biomedical applications including therapy and imaging, and optical applications like two photon upconversion, enhanced luminesence, and infrared metasurfaces.

Modulation of quantum dots and clearance of Helicobacter pylori with synergy of cell autophagy

Helicobacter pylori (Hp) is one type of Gram-negative pathogenic bacterium that colonizes and causes a wide range of gastric diseases. Once Hp penetrates into cells, the currently recognized triple or quadruple therapy often loses effectiveness. Recent evidence suggests that autophagy is closely associated with Hp infection, and can play an important role in the eradication of Hp. More importantly, certain types of quantum dots (QDs) can induce and modulate cellular autophagy, and can be developed into conjugates making QDs potential candidates as new anti-Hp agents.

Triangle-, tripod-, and tetrapod-branched ITO nanocrystals for anisotropic infrared plasmonics

While many sophisticated geometries of metallic nanoparticles have been explored for plasmon resonance in the visible light waveband, similar structures for infrared plasmonics have seldom been studied. Herein, for the first time, we report branched colloidal Sn-doped In₂O₃ (ITO) NCs prepared through heating metal organic precursors in a high boiling solvent and surfactants via a simple one-pot method and their interesting anisotropic infrared plasmonics. Shaped ITO NCs were anisotropically grown into triangles, tripods, and tetrapods from spherical particles by tuning the composition of the surfactants. Interestingly, such anisotropic ITO NCs exhibit shape-dependent localized surface plasmon resonances. A new peak emerged at a low energy band, and the peak intensity increases when the particles become more anisotropic. Meanwhile, a redshift of this newly emerging peak and a blueshift of the original peak can also be observed. The proposed overlapping spheroid model successfully explained those features and the calculated extinction spectra matched excellently with the experimental data. Moreover, the origins of those peaks were also revealed and assigned to in-plane longitudinal and out-of-plane transverse modes, respectively. This work may help design more sophisticated structures for infrared plasmonics and broaden its applications in various areas.