Ultralarge Bending Strain and Fracture-Resistance Investigation of Tungsten Carbide Nanowires

Tunable Mechanics and Micromechanism in Close-Knit Silicide-in-SiO2 Core-Shell Nanowires

Bending/tension mechanics is one of the core issues for nanowires in flexible free-standing transport and sensor applications, but it remains a challenge to tailor the mechanical performance beyond the inherent properties. Herein, based on structure engineering, silicon-based Mn₅Si₃@SiO₂ nanocables are proposed and demonstrated as versatile nanosystems. Except for outstanding toughness, large ultimate strain, and great strength, they display diverse mechanical behaviors such as simplex elasticity, plasticity, and viscoelasticity under different external conditions. The tunable performances originate from synergetic effects between the core and shell components, like the atomic bonding transitional interface and space confinement, which induce optimizing internal stress distribution and the dislocation evolution mechanism in the core. The related mechanical performance is revealed carefully. The bending and tension dynamic picture, quantitative force curve, stress-strain dependence, and the corresponding lattice evolution are acquired by in/ex situ characterizations and measurements. These results contribute to nanowire mechanical design and also expand to strain-regulated three-dimensional multifunctional nanosystems.

Exceptional Deformability of Wurtzite Zinc Oxide Nanowires with Growth Axial Stacking Faults

To ensure reliability and facilitate the strain engineering of zinc oxide (ZnO) nanowires (NWs), it is significant to understand their flexibility thoroughly. In this study, single-crystalline ZnO NWs with rich axial pyramidal I (π₁) and prismatic stacking faults (SFs) are synthesized by a metal oxidation method. Bending properties of the as-synthesized ZnO NWs are investigated at the atomic scale using an in situ high-resolution transmission electron microscopy (HRTEM) technique. It is revealed that the SF-rich structures can foster multiple inelastic deformation mechanisms near room temperature, including active axial SFs' migration, deformation twinning and detwinning process in the NWs with growth π₁ SFs, and prevalent nucleation and slip of perfect dislocations with a continuous increased bending strain, leading to tremendous bending strains up to 20% of the NWs. Our results record ultralarge bending deformations and provide insights into the deformation mechanisms of single-crystalline ZnO NWs with rich axial SFs.

Effect of Fe-doping on bending elastic properties of single-crystalline rutile TiO2 nanowires

Transition-metal-doping can improve some physical properties of titanium dioxide (TiO₂) nanowires (NWs), which leads to important applications in miniature devices. Here, we investigated the elastic moduli of single-crystalline pristine and Fe-doped rutile TiO₂ NWs using the three-point bending method, which is taken as a case study of impacts on the elastic properties of TiO₂ NWs caused by transition-metal-doping. The Young's modulus of the pristine rutile TiO₂ NWs decreases when the cross-sectional area increases (changing from 246 GPa to 93.2 GPa). However, the elastic modulus of the Fe-doped rutile NWs was found to increase with the cross-sectional area (changing from 91.8 GPa to 200 GPa). For NWs with similar geometrical size, the elastic modulus (156.8 GPa) for Fe-doped rutile NWs is 24% smaller than that (194.5 GPa) of the pristine rutile TiO₂ NWs. The vacancies generated by Fe-doping are supposed to cause the reduction of elastic modulus of rutile TiO₂ NWs. This work provides a fundamental understanding of the effects of transition-metal-doping on the elastic properties of TiO₂ NWs.

Millimeters long super flexible Mn5Si3@SiO2 electrical nanocables applicable in harsh environments

Providing high performance electrical nano-interconnects for micro-nano electronics that are robust in harsh environments is highly demanded. Today, electrical nano-interconnects based on metallic nanowires, e.g. Ag and Cu, are limited by their positive physicochemical reactivity and ductility under large strain (i.e. irreversible dislocations and local necking-down elongation) at high temperatures or in strong oxidizing and acidic environments. Herein, to overcome these limitations, high-quality millimetre-sized soft manganese-based silicide (Mn₅Si₃@SiO₂) nanowire nanocables are designed via a glassy Si–Mn–O matrix assisted growth. The proposed nanocables exhibit good electrical performance (resistivity of 1.28 to 3.84×10^-6 Ωm and maximum current density 1.22 to 3.54×10⁷ A cm⁻²) at temperatures higher than 317°C in air atmosphere, strongly acidic (HCl, PH=1.0) and oxidizing (H₂O₂, 10%) ambient, and under complex electric field. The proposed Mn₅Si₃@SiO₂ nanocables, which withstand a strain of 16.7% free of failure, could be exploited for diverse applications in flexible electronics and complex wiring configurations.

Though high performance electrical interconnects are required for micro/nano electronics, existing metallic nanowires lack structural and electrical stability. Here, the authors report soft manganese-based silicide nanowires with high electrical and structural performance in harsh environments.

In Situ Atomic-Scale Study on the Ultralarge Bending Behaviors of TiO2-B/Anatase Dual-Phase Nanowires

It is challenging but important to understand the mechanical properties of one-dimensional (1D) nanomaterials for their design and integration into nanodevices. Generally, brittle ceramic nanowires (NWs) cannot withstand a large bending strain. Herein, in situ bending deformation of titanium dioxide (TiO₂) NWs with a bronze/anatase dual-phase was carried out inside a transmission electron microscopy (TEM) system. An ultralarge bending strain up to 20.3% was observed on individual NWs. Through an in situ atomic-scale study, the large bending behavior for a dual-phase TiO₂ NW was found to be related to a continuous crystalline-structure evolution including phase transition, small deformation twinning, and dislocation nucleation and movements. Additionally, no amorphization or crack occurred in the dual-phase TiO₂ NW even under an ultralarge bending strain. These results revealed that an individual ceramic NW can undergo a large bending strain with rich defect activities.

Atomic-scale investigation on the ultra-large bending behaviours of layered sodium titanate nanowires

A study on the mechanical properties of one-dimensional layered titanate nanomaterials is crucial since they demonstrate important applications in various fields. Here, we conducted ex situ and in situ atomic-scale investigation on the bending properties of a kind of ceramic-layered titanate (Na2Ti2O4(OH)2) nanowire using transmission electron microscopy. The nanowires showed flexibility along the 100 direction and could obtain a maximum bending strain of nearly 37%. By analysing the defect behaviours, the unique bending properties of this ceramic material were found to correlate with a novel arrangement of dislocations, an active dislocation nucleation and movement along the axial direction resulting from the weak electrostatic interaction between the TiO6 layers and the low b/a ratio. These results provide a pioneering and key understanding on the bending behaviours of layered titanate nanowire families and potentially other one-dimensional nanomaterials with layered crystalline structures.

Flexible Transparent and Free-Standing SiC Nanowires Fabric: Stretchable UV Absorber and Fast-Response UV-A Detector

Transparent and flexible materials are desired for the construction of photoelectric multifunctional integrated devices and portable electronics. Herein, 2H-SiC nanowires are assembled into a flexible, transparent, self-standing nanowire fabric (FTS-NWsF). The as-synthesized ultralong nanowires form high-quality crystals with a few stacking faults. The optical transmission spectra reveal that FTS-NWsF absorbs most incident 200-400 nm light, but remains transparent to visible light. A polydimethylsiloxane (PDMS)-SiC fabric-PDMS sandwich film device exhibits stable electrical output even when repeatedly stretched by up to 50%. Unlike previous SiC nanowires in which stacking faults are prevalent, the transparent, stretchable SiC fabric shows considerable photoelectric activity and exhibits a rapid photoresponse (rise and decay time < 30 ms) to 340-400 nm light, covering most of the UV-A spectral region. These advances represent significant progress in the design of functional optoelectronic SiC nanowires and transparent and stretchable optoelectronic systems.

Anisotropic electrical transport of flexible tungsten carbide nanostructures: towards nanoscale interconnects and electron emitters

Due to the coexistence of metal- and ionic-bonds in a hexagonal tungsten carbide (WC) lattice, disparate electron behaviors were found in the basal plane and along the c-axial direction, which may create an interesting anisotropic mechanical and electrical performance. To demonstrate this, low-dimensional nanostructures such as nanowires and nanosheets are suitable for investigation because they usually grow in single crystals with special orientations. Herein, we report the experimental research regarding the anisotropic conductivity of [0001] grown WC nanowires and basal plane-expanded nanosheets, which resulted in a conductivity of 7.86 × 10³ Ω^-1 · m^-1 and 7.68 × 10⁴ Ω^-1 · m^-1 respectively. This conforms to the fact that the highly localized W d state aligns along the c direction, while there is little intraplanar directional bonding in the W planes. With advanced micro-manipulation technology, the conductivity of a nanowire was tested to be approximately constant, even under a considerable bending state. Moreover, the field electron emission of WC was evaluated based on large area emission and single nanowire (nanosheet) emission. A single nanowire exhibits a stable electron emission performance, which can output emission currents >3 uA before fusing. These results provide useful references to assess low-dimensional WC nanostructures as electronic materials in flexible devices, such as nanoscale interconnects and electron emitters.