II3 V2 (II: Zn, Cd; V: P, As) Semiconductors: From Bulk Solids to Colloidal Nanocrystals

Acceleration of Near-IR Emission through Efficient Surface Passivation in Cd3P2 Quantum Dots

Fast near-IR (NIR) emitters are highly valuable in telecommunications and biological imaging. The most established NIR emitters are epitaxially grown InxGa1-xAs quantum dots (QDs), but epitaxial growth has several disadvantages. Colloidal synthesis is a viable alternative that produces a few NIR-emitting materials, but they suffer from long photoluminescence (PL) times. These long PL times are intrinsic in some NIR materials (PbS, PbSe) but are attributed to emission from bright trapped carrier states in others. We show that Cd3P2 QDs possess substantial trap emission with radiative times >101 ns. Surface passivation through shell growth or coordination of Lewis acids is shown to accelerate the NIR emission from Cd3P2 QDs by decreasing the amount of trap emission. This finding brings us one step closer to the application of colloidally synthesized QDs as quantum emitters.

Cd3P2/Zn3P2 Core-Shell Nanocrystals: Synthesis and Optical Properties

II-V semiconductor nanocrystals such as Cd₃P₂ and Zn₃P₂ have enormous potential as materials in next-generation optoelectronic devices requiring active optical properties across the visible and infrared range. To date, this potential has been unfulfilled due to their inherent instability with respect to air and moisture. Core-shell system Cd₃P₂/Zn₃P₂ is synthesized and studied from structural (morphology, crystallinity, shell diameter), chemical (composition of core, shell, and ligand sphere), and optical perspectives (absorbance, emission-steady state and time resolved, quantum yield, and air stability). The improvements achieved by coating with Zn₃P₂ are likely due to its identical crystal structure to Cd₃P₂ (tetragonal), highlighting the key role crystallographic concerns play in creating cutting edge core-shell NCs.

Stoichiometry modulates the optoelectronic functionality of Zinc Phosphide (Zn3-xP2+x)

Predictive synthesis–structure–property relationships are at the core of materials design for novel applications. In this regard, correlations between the compositional stoichiometry variations and functional properties are essential for enhancing the performance of devices based on these materials. In this work, we investigate the effect of stoichiometry variations and defects on the structural and optoelectronic properties of monocrystalline zinc phosphide (Zn₃P₂), a promising compound for photovoltaic applications. We use experimental methods, such as electron and X-ray diffraction and Raman spectroscopy, along with density functional theory calculations, to showcase the favorable creation of P interstitial defects over Zn vacancies in P-rich and Zn-poor compositional regions. Photoluminescence and absorption measurements show that these defects create additional energy levels at about 180 meV above the valence band. Furthermore, they lead to the narrowing of the bandgap, due to the creation of band tails in the region of around 10–20 meV above the valence and below the conduction band. The ability of zinc phosphide to form off-stoichiometric compounds provides a new promising opportunity for tunable functionality that benefits applications. In that regard, this study is crucial for the further development of zinc phosphide and its application in optoelectronic and photovoltaic devices, and should pave the way for defect engineering in this kind of material.

Zinc phosphide (Zn₃P₂) is a promising material for photovoltaic applications. Here, we investigate the effect of stoichiometry variations and defects on the structural and optoelectronic properties of monocrystalline Zn₃P₂.

Raman tensor of zinc-phosphide (Zn3P2): from polarization measurements to simulation of Raman spectra

Zinc phosphide (Zn3P2) is a II-V compound semiconductor with promising photovoltaic and thermoelectric applications. Its complex structure is susceptible to facile defect formation, which plays a key role in further optimization of the material. Raman spectroscopy can be effectively used for defect characterization. However, the Raman tensor of Zn3P2, which determines the intensity of Raman peaks and anisotropy of inelastic light scattering, is still unknown. In this paper, we use angle-resolved polarization Raman measurements on stoichiometric monocrystalline Zn3P2 thin films to obtain the Raman tensor of Zn3P2. This has allowed determination of the Raman tensor elements characteristic for the A1g, B1g and B2g vibrational modes. These results have been compared with the theoretically obtained Raman tensor elements and simulated Raman spectra from the lattice-dynamics calculations using first-principles force constants. Excellent agreement is found between the experimental and simulated Raman spectra of Zn3P2 for various polarization configurations, providing a platform for future characterization of the defects in this material.

Ternary ACd4P3 (A = Na, K) Nanostructures via a Hydride Solution-Phase Route

Complex pnictides such as I-II₄-V₃ compounds (I = alkali metal; II = divalent transition metal; V = pnictide element) display rich structural chemistry and interesting optoelectronic properties, but can be challenging to synthesize using traditional high-temperature solid-state synthesis. Soft chemistry methods can offer control over particle size, morphology, and properties. However, the synthesis of multinary pnictides from solution remains underdeveloped. Here, we report the colloidal hot-injection synthesis of ACd₄P₃ (A = Na, K) nanostructures from their alkali metal hydrides (AH). Control studies indicate that NaCd₄P₃ forms from monometallic Cd⁰ seeds and not from binary Cd₃P₂ nanocrystals. IR and ssNMR spectroscopy reveal tri-n-octylphosphine oxide (TOPO) and related ligands are coordinated to the ternary surface. Computational studies show that competing phases with space group symmetries R3̅m and Cm differ by only 30 meV/formula unit, indicating that synthetic access to either of these polymorphs is possible. Our synthesis unlocks a new family of nanoscale multinary pnictide materials that could find use in optoelectronic and energy conversion devices.

Synthesis of luminescent core/shell α-Zn3P2/ZnS quantum dots

Metal chalcogenide nanoparticles offer vast control over their optoelectronic properties via size, shape, composition, and morphology which has led to their use across fields including optoelectronics, energy storage, and catalysis. While cadmium and lead-based nanocrystals are prevalent in applications, concerns over their toxicity have motivated researchers to explore alternate classes of nanomaterials based on environmentally benign metals such as zinc and tin. The goal of this research is to identify material systems that offer comparable performance to existing metal chalcogenide systems from abundant, recyclable, and environmentally benign materials. With band gaps that span the visible through the infrared, II-V direct band gap semiconductors such as tetragonal zinc phosphide (α-Zn3P2) are promising candidates for optoelectronics. To date, syntheses of α-Zn3P2 nanoparticles have been hindered because of the toxicity of zinc and phosphorus precursors, surface oxidation, and defect states leading to carrier trapping and low photoluminescence quantum yield. This work reports a colloidal synthesis of quantum confined α-Zn3P2 nanoparticles from common phosphorus precursor tris(trimethylsilyl)phosphine and environmentally benign zinc carboxylates. Shelling of the nanoparticles with zinc sulfide is shown as a method of preventing oxidation and improving the optical properties of the nanoparticles. These results show a route to stabilizing α-Zn3P2 nanoparticles for optoelectronic device applications.

Probing the Surface Structure of Semiconductor Nanoparticles by DNP SENS with Dielectric Support Materials

Surface characterization is crucial for understanding how the atomic-level structure affects the chemical and photophysical properties of semiconducting nanoparticles (NPs). Solid-state nuclear magnetic resonance spectroscopy (NMR) is potentially a powerful technique for the characterization of the surface of NPs, but it is hindered by poor sensitivity. Dynamic nuclear polarization surface enhanced NMR spectroscopy (DNP SENS) has previously been demonstrated to enhance the sensitivity of surface-selective solid-state NMR experiments by 1-2 orders of magnitude. Established sample preparations for DNP SENS experiments on NPs require the dilution of the NPs on mesoporous silica. Using hexagonal boron nitride (h-BN) to disperse the NPs doubles DNP enhancements and absolute sensitivity in comparison to standard protocols with mesoporous silica. Alternatively, precipitating the NPs as powders, mixing them with h-BN, and then impregnating the powdered mixture with radical solution leads to further 4-fold sensitivity enhancements by increasing the concentration of NPs in the final sample. This modified procedure provides a factor of 9 improvement in NMR sensitivity in comparison to previously established DNP SENS procedures, enabling challenging homonuclear and heteronuclear 2D NMR experiments on CdS, Si, and Cd₃P₂ NPs. These experiments allow NMR signals from the surface, subsurface, and core sites to be observed and assigned. For example, we demonstrate the acquisition of DNP-enhanced 2D ¹¹³Cd-¹¹³Cd correlation NMR experiments on CdS NPs and natural isotropic abundance 2D ¹³C-²⁹Si HETCOR of functionalized Si NPs. These experiments provide a critical understanding of NP surface structures.

Heterobimetallic Single-Source Precursors: A Springboard to the Synthesis of Binary Intermetallics

Intermetallics are atomically ordered crystalline compounds containing two or more main group and transition metals. In addition to their rich crystal chemistry, intermetallics display unique properties of interest for a variety of applications, including superconductivity, hydrogen storage, and catalysis. Because of the presence of metals with a wide range of reduction potentials, the controlled synthesis of intermetallics can be difficult. Recently, soft chemical syntheses such as the modified polyol and ship-in-a-bottle methods have helped advance the preparation of these materials. However, phase-segregated products and complex multistep syntheses remain common. Here, we demonstrate the use of heterobimetallic single-source precursors for the synthesis of 10-15 and 11-15 binary intermetallics. The coordination environment of the precursor, as well as the exact temperature used play a critical role in determining the crystalline intermetallic phase that is produced, highlighting the potential versatility of this approach in the synthesis of a variety of compounds. Furthermore, we show that a recently developed novel plasma-processing technique is successful in removing the surface graphitic carbon observed in some of the prepared compounds. This new single-source precursor approach is a powerful addition to the synthesis of atomically ordered intermetallic compounds and will help facilitate their further study and development for future applications.