Piezo-Phototronic Matrix via a Nanowire Array

Low-Temperature Induced Enhancement of Photoelectric Performance in Semiconducting Nanomaterials

The development of light-electricity conversion in nanomaterials has drawn intensive attention to the topic of achieving high efficiency and environmentally adaptive photoelectric technologies. Besides traditional improving methods, we noted that low-temperature cooling possesses advantages in applicability, stability and nondamaging characteristics. Because of the temperature-related physical properties of nanoscale materials, the working mechanism of cooling originates from intrinsic characteristics, such as crystal structure, carrier motion and carrier or trap density. Here, emerging advances in cooling-enhanced photoelectric performance are reviewed, including aspects of materials, performance and mechanisms. Finally, potential applications and existing issues are also summarized. These investigations on low-temperature cooling unveil it as an innovative strategy to further realize improvement to photoelectric conversion without damaging intrinsic components and foresee high-performance applications in extreme conditions.

Piezotronics and Piezo-phototronics of Third Generation Semiconductor Nanowires

With the fast development of nanoscience and nanotechnology in the last 30 years, semiconductor nanowires have been widely investigated in the areas of both electronics and optoelectronics. Among them, representatives of third generation semiconductors, such as ZnO and GaN, have relatively large spontaneous polarization along their longitudinal direction of the nanowires due to the asymmetric structure in their c-axis direction. Two-way or multiway couplings of piezoelectric, photoexcitation, and semiconductor properties have generated new research areas, such as piezotronics and piezo-phototronics. In this review, an in-depth discussion of the mechanisms and applications of nanowire-based piezotronics and piezo-phototronics is presented. Research on piezotronics and piezo-phototronics has drawn much attention since the effective manipulation of carrier transport, photoelectric properties, etc. through the application of simple mechanical stimuli and, conversely, since the design of new strain sensors based on the strain-induced change in semiconductor properties.

Piezo-phototronic effect-modulated carrier transport behavior in different regions of a Si/CdS heterojunction photodetector under a Vis-NIR waveband

The piezo-phototronic effect, as a three-way coupling effect of piezoelectricity, semiconductor and optical excitation in piezoelectric semiconductors to improve the performance of optoelectronic devices, has a wide range of applications in various fields. However, under different light illumination conditions, the piezo-phototronic effect would have different effects on the optoelectronic performance due to the different photo-generated carrier excitation regions. Here, the piezo-phototronic effect is utilized to modulate the carrier transport behavior of a p-Si/n-CdS heterojunction PD during the optoelectronic process in a broadband range from visible to near-infrared light. The strain-induced piezo-charges significantly improve the photoresponse performance of the heterojunction PD. The photoresponsivity increases by 1867% under -0.35‰ strain under 808 nm light illumination, with a remarkable reduction in the rise and fall times to ∼2.1 ms (reduced by 83.3% and 50.0%, respectively). However, since the photo-generated carriers are produced only at the n-CdS side under 442 nm light illumination, the photoresponse performance is greatly weakened by the piezo-phototronic effect. The corresponding working mechanism of the piezo-phototronic effect on the heterojunction photodiode under different light illumination conditions is proposed in detail. These results provide an in-depth understanding about the piezo-phototronic effect, which would enable more efficient utilization of the piezo-phototronic effect in optoelectronic devices.

Self-Powered Well-Aligned P(VDF-TrFE) Piezoelectric Nanofiber Nanogenerator for Modulating an Exact Electrical Stimulation and Enhancing the Proliferation of Preosteoblasts

Electric potential plays an indispensable role in tissue engineering and wound healing. Piezoelectric nanogenerators based on direct piezoelectric effects can be self-powered energy sources for electrical stimulation and have attracted extensive attention. However, the accuracy of piezoelectric stimuli on piezoelectric polymers membranes in vitro during the dynamic condition is rarely studied. Here, a self-powered tunable electrical stimulation system for assisting the proliferation of preosteoblasts was achieved by well-aligned P(VDF-TrFE) piezoelectric nanofiber membrane (NFM) both as a nanogenerator (NG) and as a scaffold. The effects of electrospinning and different post-treatments (annealing and poling) on the surface wettability, piezoelectric β phase, ferroelectric properties, and sensing performance of NFMs were evaluated here. The polarized P(VDF-TrFE) NFM offered an enhanced piezoelectric value (d31 of 22.88 pC/N) versus pristine P(VDF-TrFE) NFM (d31 of 0.03 pC/N) and exhibited good sensing performance. The maximum voltage and current output of the P(VDF-TrFE) piezoelectric nanofiber NGs reached -1.7 V and 41.5 nA, respectively. An accurate electrical response was obtained in real time under dynamic mechanical stimulation by immobilizing the NGs on the flexible bottom of the culture plate, thereby restoring the real scene of providing electrical stimulation to the cells in vitro. In addition, we simulated the interaction between the piezoelectric nanofiber NG and cells through an equivalent circuit model. To verify the feasibility of P(VDF-TrFE) nanofiber NGs as an exact electrical stimulation, the effects of different outputs of P(VDF-TrFE) nanofiber NGs on cell proliferation in vitro were compared. The study realized a significant enhancement of preosteoblasts proliferation. This work demonstrated the customizability of P(VDF-TrFE) piezoelectric nanofiber NG for self-powered electrical stimulation system application and suggested its significant potential application for tissue repair and regeneration.

Tunable WSe2-CdS mixed-dimensional van der Waals heterojunction with a piezo-phototronic effect for an enhanced flexible photodetector

Due to the absence of bond fracture and atomic reconstruction under strain, vdWs structures hold great promise in flexible electronic/optoelectronic applications. Besides all-2D heterojunctions, the dangling-bond-free surfaces of 2D materials also enable vdWs interaction with other materials of different dimensionalities, forming mixed-dimensional vdWs heterostructures. Such structures allow a much broader selection of materials and may provide a promising approach to compensate for the intrinsic weakness of 2D crystals before realizing their full potential. In this study, we present the fabrication of a WSe2-CdS mixed-dimensional vdWs p-n heterojunction for flexible photodetection. A strain-tunable vdWs interface was demonstrated and the photoresponse was dramatically enhanced with the piezo-phototronic effect. The photocurrent can be increased by ∼110% under a compressive strain of -0.73% and the corresponding photoresponsivity reaches up to 33.4 A W-1. The enhancement originates from realigned local energy-band tilting at the WSe2-CdS interface by strain-induced piezopolarization, which promotes the transport process of photoexcited carriers. Our work provides a new route to a tunable vdWs interface other than with electrostatic gating, which may inspire the development of novel flexible vdWs optoelectronics.