Controllable Synthesis of [11-2-2] Faceted InN Nanopyramids on ZnO for Photoelectrochemical Water Splitting

Anodic Reconstructed p+-GaAs/a-InAsN for Stable and Efficient Photoelectrochemical Hydrogen Evolution

The extremely poor solution stability and massive carrier recombination have seriously prevented III-V semiconductor nanomaterials from efficient and stable hydrogen production. In this work, an anodic reconstruction strategy based on group III-V active semiconductors is proposed for the first time, resulting in 19-times photo-gain. What matters most is that the device after anodic reconstruction shows very superior stability under the protracted photoelectrochemical (PEC) test over 8100 s, while the final photocurrent density does not decrease but rather increases by 63.15%. Using the experiment and DFT theoretical calculation, the anodic reconstruction mechanism is elucidated: through the oxidation of indium clusters and the migration of arsenic atoms, the reconstruction formed p+-GaAs/a-InAsN. The hole concentration of the former is increased by 10 times (5.64 × 1018 cm-1 increases up to 5.95 × 1019 cm-1) and the band gap of the latter one is reduced to a semi-metallic state, greatly strengthening the driving force of PEC water splitting. This work turns waste into treasure, transferring the solution instability into better efficiency.

Optical and Electrical Modulation Strategies of Photoelectrodes for Photoelectrochemical Water Splitting

When constructing efficient, cost-effective, and stable photoelectrodes for photoelectrochemical (PEC) systems, the solar-driven photo-to-chemical conversion efficiency of semiconductors is limited by several factors, including the surface catalytic activity, light absorption range, carrier separation, and transfer efficiency. Accordingly, various modulation strategies, such as modifying the light propagation behavior and regulating the absorption range of incident light based on optics and constructing and regulating the built-in electric field of semiconductors based on carrier behaviors in semiconductors, are implemented to improve the PEC performance. Herein, the mechanism and research advancements of optical and electrical modulation strategies for photoelectrodes are reviewed. First, parameters and methods for characterizing the performance and mechanism of photoelectrodes are introduced to reveal the principle and significance of modulation strategies. Then, plasmon and photonic crystal structures and mechanisms are summarized from the perspective of controlling the propagation behavior of incident light. Subsequently, the design of an electrical polarization material, polar surface, and heterojunction structure is elaborated to construct an internal electric field, which serves as the driving force to facilitate the separation and transfer of photogenerated electron-hole pairs. Finally, the challenges and opportunities for developing optical and electrical modulation strategies for photoelectrodes are discussed.

Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

Using one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III-V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

ZIF-8 derived ZnO/TiO2 heterostructure with rich oxygen vacancies for promoting photoelectrochemical water splitting

Due to the serious recombination of electron-hole and weak photoresponse ability, achieving highly efficient photoelectrochemical (PEC) water splitting activity for TiO₂ photoelectrode has become a key issue. In this paper, we reported a new method for preparing ZnO/TiO₂ photoelectrodes by electrostatic adsorption from zeolitic imidazolate framework-8 (ZIF-8) as the precursor. ZIF-8 was combined with TiO₂ nanorods (NRs) through electrostatic interaction and then calcined to obtain ZnO/TiO₂ heterojunction photoelectrodes with abundant oxygen vacancies (O_vac). The introduced ZnO with O_vac provides a large number of active sites which enhanced the electrical conductivity and charges separation of ZnO/TiO₂ photoelectrode. The optimal photocurrent density of ZnO/TiO₂ photoelectrodes at 1.23 V versus (vs.) reversible hydrogen electrode (RHE) under illumination (100 mW/cm²) has reached 1.76 mA/cm², almost 2.75 times that of the pure TiO₂. Meanwhile, the incident photon-to-electron conversion efficiency (IPCE) of the best photoelectrode has increased to 58.2% at 390 nm, the charge injection (η_injection) and separation (η_separation) efficiency have reached to 93.53% and 51.62% (1.23 V vs. RHE), respectively.

Crystal Facet Engineering of Photoelectrodes for Photoelectrochemical Water Splitting

Photoelectrochemical (PEC) water splitting is a promising approach for solar-driven hydrogen production with zero emissions, and it has been intensively studied over the past decades. However, the solar-to-hydrogen (STH) efficiencies of the current PEC systems are still far from the 10% target needed for practical application. The development of efficient photoelectrodes in PEC systems holds the key to achieving high STH efficiencies. In recent years, crystal facet engineering has emerged as an important strategy in designing efficient photoelectrodes for PEC water splitting, which has yet to be comprehensively reviewed and is the main focus of this article. After the Introduction, the second section of this review concisely introduces the mechanisms of crystal facet engineering. The subsequent section provides a snapshot of the unique facet-dependent properties of some semiconductor crystals including surface electronic structures, redox reaction sites, surface built-in electric fields, molecular adsorption, photoreaction activity, photocorrosion resistance, and electrical conductivity. Then, the methods for fabricating photoelectrodes with faceted semiconductor crystals are reviewed, with a focus on the preparation processes. In addition, the notable advantages of the crystal facet engineering of photoelectrodes in terms of light harvesting, charge separation and transfer, and surface reactions are critically discussed. This is followed by a systematic overview of the modification strategies of faceted photoelectrodes to further enhance the PEC performance. The last section summarizes the major challenges and some invigorating perspectives for future research on crystal facet engineered photoelectrodes, which are believed to play a vital role in promoting the development of this important research field.

n–n ZnO–Ag2CrO4 heterojunction photoelectrodes with enhanced visible-light photoelectrochemical properties

In this study, ZnO nanorods (NRs) were hydrothermally grown on an Au-coated glass substrate at a relatively low temperature (90 °C), followed by the deposition of Ag₂CrO₄ particles via a successive ionic layer adsorption and reaction (SILAR) route. The content of the Ag₂CrO₄ particles on ZnO NRs was controlled by changing the number of SILAR cycles. The fabricated ZnO–Ag₂CrO₄ heterojunction photoelectrodes were subjected to morphological, structural, compositional, and optical property analyses; their photoelectrochemical (PEC) properties were investigated under simulated solar light illumination. The photocurrent responses confirmed that the ability of the ZnO–Ag₂CrO₄ heterojunction photoelectrodes to separate the photo-generated electron–hole pairs is stronger than that of bare ZnO NRs. Impressively, the maximum photocurrent density of about 2.51 mA cm⁻² at 1.23 V (vs. Ag/AgCl) was measured for the prepared ZnO–Ag₂CrO₄ photoelectrode with 8 SILAR cycles (denoted as ZnO–Ag₂CrO₄-8), which exhibited about 3-fold photo-enhancement in the current density as compared to bare ZnO NRs (0.87 mA cm⁻²) under similar conditions. The improvement in photoactivity was attributed to the ideal band gap and high absorption coefficient of the Ag₂CrO₄ particles, which resulted in improved solar light absorption properties. Furthermore, an appropriate annealing treatment was proven to be an efficient process to increase the crystallinity of Ag₂CrO₄ particles deposited on ZnO NRs, which improved the charge transport characteristics of the ZnO–Ag₂CrO₄-8 photoelectrode annealed at 200 °C and increased the performance of the photoelectrode. The results achieved in the present work present new insights for designing n–n heterojunction photoelectrodes for efficient and cost-effective PEC applications and solar-to-fuel energy conversions.

ZnO NRs hydrothermally grown on Au coated glass substrate, followed by deposition of Ag₂CrO₄ particles via SILAR route. The content of the Ag₂CrO₄ particles on the ZnO NRs were controlled by changing the number of SILAR cycles.