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Ma H, Wu X, Du W, Zhao L, Zhong Y, Chen S, Gao P, Yue S, Zhang Q, Liu W, Liu X. Edge Raman enhancement at layered PbI 2platelets induced by laser waveguide effect. NANOTECHNOLOGY 2021; 33:035203. [PMID: 34627132 DOI: 10.1088/1361-6528/ac2e5a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2021] [Accepted: 10/09/2021] [Indexed: 06/13/2023]
Abstract
As a two-dimensional (2D) layered semiconductor, lead iodide (PbI2) has been widely used in optoelectronics owing to its unique crystal structure and distinctive optical and electrical properties. A comprehensive understanding of its optical performance is essential for further application and progress. Here, we synthesized regularly shaped PbI2platelets using the chemical vapor deposition method. Raman scattering spectroscopy of PbI2platelets was predominantly enhanced when the laser radiated at the edge according to Raman mapping spectroscopy. Combining the outcome of polarized Raman scattering spectroscopy and finite-difference time domain simulation analysis, the Raman enhancement was proven to be the consequence of the enhancement effects inherent to the high refractive index contrast waveguide, which is naturally formed in well-defined PbI2platelets. Because of the enlarged excited area determined by the increased propagation length of the laser in the PbI2platelet formed waveguide, the total Raman enhancements are acquired rather than a localized point enhancement. Finally, the Raman enhancement factor is directly related to the thickness of the PbI2platelet, which further confirms the waveguide-enhanced edge Raman. Our investigation of the optical properties of PbI2platelets offers reference for potential 2D layered-related optoelectronic applications.
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Affiliation(s)
- Heyi Ma
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Xianxin Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Wenna Du
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
| | - Liyun Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Yangguang Zhong
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Shulin Chen
- Electron Microscopy Laboratory, International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Peng Gao
- Electron Microscopy Laboratory, International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Shuai Yue
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Wei Liu
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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2
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Ghoshal D, Shang H, Sun X, Wen X, Chen D, Wang T, Lu Z, Gupta T, Efstathiadis H, West D, Koratkar N, Lu TM, Zhang S, Shi SF. Orientation-Controlled Large-Area Epitaxial PbI 2 Thin Films with Tunable Optical Properties. ACS APPLIED MATERIALS & INTERFACES 2021; 13:32450-32460. [PMID: 34196518 DOI: 10.1021/acsami.1c05734] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Lead iodide (PbI2) as a layered material has emerged as an excellent candidate for optoelectronics in the visible and ultraviolet regime. Micrometer-sized flakes synthesized by mechanical exfoliation from bulk crystals or by physical vapor deposition have shown a plethora of applications from low-threshold lasing at room temperature to high-performance photodetectors with large responsivity and faster response. However, large-area centimeter-sized growth of epitaxial thin films of PbI2 with well-controlled orientation has been challenging. Additionally, the nature of grain boundaries in epitaxial thin films of PbI2 remains elusive. Here, we use mica as a model substrate to unravel the growth mechanism of large-area epitaxial PbI2 thin films. The partial growth leading to uncoalesced domains reveals the existence of inversion domain boundaries in epitaxial PbI2 thin films on mica. Combining the experimental results with first-principles calculations, we also develop an understanding of the thermodynamic and kinetic factors that govern the growth mechanism, which paves the way for the synthesis of high-quality large-area PbI2 on other substrates and heterostructures of PbI2 on single-crystalline graphene. The ability to reproducibly synthesize high-quality large-area thin films with precise control over orientation and tunable optical properties could open up unique and hitherto unavailable opportunities for the use of PbI2 and its heterostructures in optoelectronics, twistronics, substrate engineering, and strain engineering.
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Affiliation(s)
- Debjit Ghoshal
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Hanzhi Shang
- Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Xin Sun
- Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Xixing Wen
- Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Dongxue Chen
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Tianmeng Wang
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Zonghuan Lu
- Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Tushar Gupta
- Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Harry Efstathiadis
- Colleges of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, New York 12203, United States
| | - Damien West
- Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Nikhil Koratkar
- Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
- Department of Material Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Toh-Ming Lu
- Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Shengbai Zhang
- Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Su-Fei Shi
- Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
- Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
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3
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Bi W, Cui Q, Jia P, Huang X, Zhong Y, Wu D, Tang Y, Shen S, Hu Y, Lou Z, Teng F, Liu X, Hou Y. Efficient Quasi-Two-Dimensional Perovskite Light-Emitting Diodes with Improved Multiple Quantum Well Structure. ACS APPLIED MATERIALS & INTERFACES 2020; 12:1721-1727. [PMID: 31880424 DOI: 10.1021/acsami.9b10186] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Quasi-two-dimensional (quasi-2D) perovskites with a multiple quantum well structure can enhance the exciton binding energy and controllable quantum confine effect, which are attractive materials for efficient perovskite light-emitting diodes (PeLEDs). However, the multiphase mixtures contained in these materials would cause nonradiative recombination at the perovskite film surface. Here, a facile solution surface treatment is adopted to improve the multiple quantum well structure of the quasi-2D perovskite emitting layer, which can reduce the influence of defectinduced nonradiative recombination and the electric-field-induced dissociation of excitons for the PeLEDs. The improved multiple quantum well structure is verified by UV absorption spectra and temperature-dependent photoluminescence spectra measurements. The photoluminescence quantum yield of the quasi-2D perovskite film with surface treatment has been approximately increased by 200%. Meanwhile, the electroluminescence device achieves a current efficiency of 45.9 cd/A.
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Affiliation(s)
- Wentao Bi
- Key Laboratory of Luminescence and Optical Information, Ministry of Education , Beijing JiaoTong University , Beijing 100044 , China
| | - Qiuhong Cui
- Key Laboratory of Luminescence and Optical Information, Ministry of Education , Beijing JiaoTong University , Beijing 100044 , China
| | - Pengcheng Jia
- Key Laboratory of Luminescence and Optical Information, Ministry of Education , Beijing JiaoTong University , Beijing 100044 , China
| | - Xin Huang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education , Beijing JiaoTong University , Beijing 100044 , China
| | - Yangguang Zhong
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience , National Center for Nanoscience and Technology , Beijing 100190 , China
| | - Dongdong Wu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education , Beijing JiaoTong University , Beijing 100044 , China
| | - Yang Tang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education , Beijing JiaoTong University , Beijing 100044 , China
| | - Shuang Shen
- Key Laboratory of Luminescence and Optical Information, Ministry of Education , Beijing JiaoTong University , Beijing 100044 , China
| | - Yufeng Hu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education , Beijing JiaoTong University , Beijing 100044 , China
| | - Zhidong Lou
- Key Laboratory of Luminescence and Optical Information, Ministry of Education , Beijing JiaoTong University , Beijing 100044 , China
| | - Feng Teng
- Key Laboratory of Luminescence and Optical Information, Ministry of Education , Beijing JiaoTong University , Beijing 100044 , China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience , National Center for Nanoscience and Technology , Beijing 100190 , China
| | - Yanbing Hou
- Key Laboratory of Luminescence and Optical Information, Ministry of Education , Beijing JiaoTong University , Beijing 100044 , China
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Bhorde A, Nair S, Borate H, Pandharkar S, Aher R, Punde A, Waghmare A, Shinde P, Vairale P, Waykar R, Doiphode V, Jadkar V, Hase Y, Rondiya S, Patil N, Prasad M, Jadkar S. Highly stable and Pb-free bismuth-based perovskites for photodetector applications. NEW J CHEM 2020. [DOI: 10.1039/d0nj01806f] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Herein, we report synthesis of highly stable, Pb-free bismuth iodide, stoichiometric methylammonium bismuth iodide and non-stoichiometric methylammonium bismuth iodide perovskite thin films for photodetector applications.
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Fang B, Chu M, Tan L, Li P, Hou Y, Shi Y, Zhao YS, Yin M. Near-Infrared Microlasers from Self-Assembled Spiropyrane-Based Microsphercial Caps. ACS APPLIED MATERIALS & INTERFACES 2019; 11:38226-38231. [PMID: 31529963 DOI: 10.1021/acsami.9b10189] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Near-infrared (NIR) microlasers play a significant role in telecommunication and biomedical tissue imaging. However, it remains a big challenge to realize NIR microlasers because of the difficulty in preparing highly efficient NIR luminescent materials and perfect optical resonators. Here, we propose a molecular design strategy to creatively realize the first spiropyrane (SP)-based NIR microlasers with low threshold from self-assembled microsphercial caps. The tetraphenylethylene (TPE) moiety with a highly twisted conformation provides a large free volume to facilitate the photoisomerization process of SP and enhance NIR emission of merocyanine in the solid state. Moreover, self-assembled TPE-SP microsphercial caps simultaneously serve as gain media and resonant microcavities, providing optical gain and feedback for NIR laser oscillations with a low threshold (3.68 μJ/cm2). These results are beneficial for deeply understanding the SP microstructures-lasing emission characteristic relationship and provide a useful guideline for the rational molecular design of NIR microlasers with special functionalities.
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Affiliation(s)
- Bing Fang
- State Key Laboratory of Chemical Resource Engineering, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing Laboratory of Biomedical Materials, Key Laboratory of Biomedical Materials of Natural Macromolecules, Ministry of Education , Beijing University of Chemical Technology , Beijing 100290 , China
| | - Manman Chu
- Key Laboratory of Photochemistry Institute of Chemistry , Chinese Academy of Sciences , Beijing 100190 , China
| | - Lina Tan
- State Key Laboratory of Chemical Resource Engineering, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing Laboratory of Biomedical Materials, Key Laboratory of Biomedical Materials of Natural Macromolecules, Ministry of Education , Beijing University of Chemical Technology , Beijing 100290 , China
| | - Pengyu Li
- State Key Laboratory of Chemical Resource Engineering, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing Laboratory of Biomedical Materials, Key Laboratory of Biomedical Materials of Natural Macromolecules, Ministry of Education , Beijing University of Chemical Technology , Beijing 100290 , China
| | - Yue Hou
- Key Laboratory of Photochemistry Institute of Chemistry , Chinese Academy of Sciences , Beijing 100190 , China
| | - Yan Shi
- State Key Laboratory of Chemical Resource Engineering, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing Laboratory of Biomedical Materials, Key Laboratory of Biomedical Materials of Natural Macromolecules, Ministry of Education , Beijing University of Chemical Technology , Beijing 100290 , China
| | - Yong Sheng Zhao
- Key Laboratory of Photochemistry Institute of Chemistry , Chinese Academy of Sciences , Beijing 100190 , China
| | - Meizhen Yin
- State Key Laboratory of Chemical Resource Engineering, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing Laboratory of Biomedical Materials, Key Laboratory of Biomedical Materials of Natural Macromolecules, Ministry of Education , Beijing University of Chemical Technology , Beijing 100290 , China
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Huan Y, Shi J, Zou X, Gong Y, Xie C, Yang Z, Zhang Z, Gao Y, Shi Y, Li M, Yang P, Jiang S, Hong M, Gu L, Zhang Q, Yan X, Zhang Y. Scalable Production of Two-Dimensional Metallic Transition Metal Dichalcogenide Nanosheet Powders Using NaCl Templates toward Electrocatalytic Applications. J Am Chem Soc 2019; 141:18694-18703. [DOI: 10.1021/jacs.9b06044] [Citation(s) in RCA: 40] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Affiliation(s)
- Yahuan Huan
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jianping Shi
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Xiaolong Zou
- Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, Guangdong 518055, China
| | - Yue Gong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chunyu Xie
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Zhongjie Yang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Zhepeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Yan Gao
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Yuping Shi
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Minghua Li
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Pengfei Yang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Shaolong Jiang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Min Hong
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Qing Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Xiaoqin Yan
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
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7
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Xu X, Li M, Xie YM, Ma Y, Ma C, Cheng Y, Lee CS, Tsang SW. Porous and Intercrossed PbI 2-CsI Nanorod Scaffold for Inverted Planar FA-Cs Mixed-Cation Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2019; 11:6126-6135. [PMID: 30668090 DOI: 10.1021/acsami.8b20933] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Depth-dependent growth of perovskite crystals remains challenging for high-performance perovskite solar cells made by a two-step spin-coating method. Effective morphology engineering approaches that enable depth-independent perovskite crystals growth and facile characterization technique to monitor subtle yet influential accompanying changes are urgently required. Here, a porous and intercrossed PbI2-(CsI)0.15 nanorods scaffold is prepared by integrating CsI incorporation with toluene dripping in ambient air, and the underlying mechanism is uncovered. With this porous scaffold and moisture-assisted thermal annealing, depth-independent growth of FA0.85Cs0.15PbI3 is achieved, as evidenced in the photoluminescent (PL) spectra acquired by exciting the perovskite film from the top and bottom individually. It is of broad interest that PL spectroscopy is demonstrated as a sensitive technique to monitor the depth-dependent growth of perovskite. Moreover, the resulting inverted planar FA0.85Cs0.15PbI3 perovskite solar cells deliver an efficiency of 16.85%, along with superior thermal and photostability. By incorporating 2% large-sized diammonium cation, propane-1,3-diammonium, the efficiency is further increased to 17.74%. Our work not only proposes a unique porous PbI2-(CsI)0.15 nanorods scaffold to achieve high-quality perovskite films in a two-step method but also highlights the distinctive advantage of PL spectroscopy in monitoring the depth-dependent quality of perovskite films.
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Affiliation(s)
- Xiuwen Xu
- City University of Hong Kong Shenzhen Research Institute , Shenzhen 518057 , P. R. China
| | - Menglin Li
- City University of Hong Kong Shenzhen Research Institute , Shenzhen 518057 , P. R. China
| | - Yue-Min Xie
- City University of Hong Kong Shenzhen Research Institute , Shenzhen 518057 , P. R. China
| | - Yuhui Ma
- City University of Hong Kong Shenzhen Research Institute , Shenzhen 518057 , P. R. China
| | | | - Yuanhang Cheng
- City University of Hong Kong Shenzhen Research Institute , Shenzhen 518057 , P. R. China
| | | | - Sai-Wing Tsang
- City University of Hong Kong Shenzhen Research Institute , Shenzhen 518057 , P. R. China
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