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Diroll BT, Guzelturk B, Po H, Dabard C, Fu N, Makke L, Lhuillier E, Ithurria S. 2D II-VI Semiconductor Nanoplatelets: From Material Synthesis to Optoelectronic Integration. Chem Rev 2023; 123:3543-3624. [PMID: 36724544 DOI: 10.1021/acs.chemrev.2c00436] [Citation(s) in RCA: 27] [Impact Index Per Article: 27.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2023]
Abstract
The field of colloidal synthesis of semiconductors emerged 40 years ago and has reached a certain level of maturity thanks to the use of nanocrystals as phosphors in commercial displays. In particular, II-VI semiconductors based on cadmium, zinc, or mercury chalcogenides can now be synthesized with tailored shapes, composition by alloying, and even as nanocrystal heterostructures. Fifteen years ago, II-VI semiconductor nanoplatelets injected new ideas into this field. Indeed, despite the emergence of other promising semiconductors such as halide perovskites or 2D transition metal dichalcogenides, colloidal II-VI semiconductor nanoplatelets remain among the narrowest room-temperature emitters that can be synthesized over a wide spectral range, and they exhibit good material stability over time. Such nanoplatelets are scientifically and technologically interesting because they exhibit optical features and production advantages at the intersection of those expected from colloidal quantum dots and epitaxial quantum wells. In organic solvents, gram-scale syntheses can produce nanoparticles with the same thicknesses and optical properties without inhomogeneous broadening. In such nanoplatelets, quantum confinement is limited to one dimension, defined at the atomic scale, which allows them to be treated as quantum wells. In this review, we discuss the synthetic developments, spectroscopic properties, and applications of such nanoplatelets. Covering growth mechanisms, we explain how a thorough understanding of nanoplatelet growth has enabled the development of nanoplatelets and heterostructured nanoplatelets with multiple emission colors, spatially localized excitations, narrow emission, and high quantum yields over a wide spectral range. Moreover, nanoplatelets, with their large lateral extension and their thin short axis and low dielectric surroundings, can support one or several electron-hole pairs with large exciton binding energies. Thus, we also discuss how the relaxation processes and lifetime of the carriers and excitons are modified in nanoplatelets compared to both spherical quantum dots and epitaxial quantum wells. Finally, we explore how nanoplatelets, with their strong and narrow emission, can be considered as ideal candidates for pure-color light emitting diodes (LEDs), strong gain media for lasers, or for use in luminescent light concentrators.
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Affiliation(s)
- Benjamin T Diroll
- Center for Nanoscale Materials, Argonne National Laboratory, 9700 S. Cass Avenue, Lemont, Illinois 60439, United States
| | - Burak Guzelturk
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, 9700 S. Cass Avenue, Lemont, Illinois 60439, United States
| | - Hong Po
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Corentin Dabard
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Ningyuan Fu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Lina Makke
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
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2
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Bai B, Zhang C, Dou Y, Kong L, Wang L, Wang S, Li J, Zhou Y, Liu L, Liu B, Zhang X, Hadar I, Bekenstein Y, Wang A, Yin Z, Turyanska L, Feldmann J, Yang X, Jia G. Atomically flat semiconductor nanoplatelets for light-emitting applications. Chem Soc Rev 2023; 52:318-360. [PMID: 36533300 DOI: 10.1039/d2cs00130f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
The last decade has witnessed extensive breakthroughs and significant progress in atomically flat two-dimensional (2D) semiconductor nanoplatelets (NPLs) in terms of synthesis, growth mechanisms, optical and electronic properties and practical applications. Such NPLs have electronic structures similar to those of quantum wells in which excitons are predominantly confined along the vertical direction, while electrons are free to move in the lateral directions, resulting in unique optical properties, such as extremely narrow emission line width, short photoluminescence (PL) lifetime, high gain coefficient, and giant oscillator strength transition (GOST). These unique optical properties make NPLs favorable for high color purity light-emitting applications, in particular in light-emitting diodes (LEDs), backlights for liquid crystal displays (LCDs) and lasers. This review article first introduces the intrinsic characteristics of 2D semiconductor NPLs with atomic flatness. Subsequently, the approaches and mechanisms for the controlled synthesis of atomically flat NPLs are summarized followed by an insight on recent progress in the mediation of core/shell, core/crown and core/crown@shell structures by selective epitaxial growth of passivation layers on different planes of NPLs. Moreover, an overview of the unique optical properties and the associated light-emitting applications is elaborated. Despite great progress in this research field, there are some issues relating to heavy metal elements such as Cd2+ in NPLs, and the ambiguous gain mechanisms of NPLs and others are the main obstacles that prevent NPLs from widespread applications. Therefore, a perspective is included at the end of this review article, in which the current challenges in this stimulating research field are discussed and possible solutions to tackle these challenges are proposed.
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Affiliation(s)
- Bing Bai
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henaon University, Kaifeng 475004, China
| | - Chengxi Zhang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China.
| | - Yongjiang Dou
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China.
| | - Lingmei Kong
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China.
| | - Lin Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China.
| | - Sheng Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China.
| | - Jun Li
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henaon University, Kaifeng 475004, China
| | - Yi Zhou
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henaon University, Kaifeng 475004, China
| | - Long Liu
- Key Lab for Special Functional Materials, Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henaon University, Kaifeng 475004, China
| | - Baiquan Liu
- School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Xiaoyu Zhang
- Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Electron Microscopy Center, Jilin University, Changchun 130012, China
| | - Ido Hadar
- Institute of Chemistry, and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Yehonadav Bekenstein
- Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel
| | - Aixiang Wang
- School of Chemistry and Chemical Engineering, Linyi University, Linyi 276005, P. R. China
| | - Zongyou Yin
- Research School of Chemistry, The Australian National University, ACT 2601, Australia
| | - Lyudmila Turyanska
- Faculty of Engineering, The University of Nottingham, Additive Manufacturing Building, Jubilee Campus, University Park, Nottingham NG7 2RD, UK
| | - Jochen Feldmann
- Chair for Photonics and Optoelectronics, Nano-Institute Munich and Department of Physics, Ludwig-Maximilians-Universität (LMU), Königinstr. 10, Munich 80539, Germany
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China.
| | - Guohua Jia
- School of Molecular and Life Sciences, Curtin University, Perth, WA 6102, Australia.
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Luo X, Zhou X, Wei S. Ionic liquid-assisted green solution approach for high-performance full-color emission quantum dot films of Ag-doped ZnxCd1-xS. INORG CHEM COMMUN 2023. [DOI: 10.1016/j.inoche.2023.110421] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2023]
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Yu J, Hu S, Gao H, Delikanli S, Liu B, Jasieniak JJ, Sharma M, Demir HV. Observation of Phonon Cascades in Cu-Doped Colloidal Quantum Wells. NANO LETTERS 2022; 22:10224-10231. [PMID: 36326236 DOI: 10.1021/acs.nanolett.2c03427] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Electronic doping has endowed colloidal quantum wells (CQWs) with unique optical and electronic properties, holding great potential for future optoelectronic device concepts. Unfortunately, how photogenerated hot carriers interact with phonons in these doped CQWs still remains an open question. Here, through investigating the emission properties, we have observed an efficient phonon cascade process (i.e., up to 27 longitudinal optical phonon replicas are revealed in the broad Cu emission band at room temperature) and identified a giant Huang-Rhys factor (S ≈ 12.4, more than 1 order of magnitude larger than reported values of other inorganic semiconductor nanomaterials) in Cu-doped CQWs. We argue that such an ultrastrong electron-phonon coupling in Cu-doped CQWs is due to the dopant-induced lattice distortion and the dopant-enhanced density of states. These findings break the widely accepted consensus that electron-phonon coupling is typically weak in quantum-confined systems, which are crucial for optoelectronic applications of doped electronic nanomaterials.
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Affiliation(s)
- Junhong Yu
- Laboratory for Shock Wave and Detonation Physics, Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang621900, People's Republic of China
- LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore639798, Singapore
| | - Sujuan Hu
- School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou510275, People's Republic of China
| | - Huayu Gao
- School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou510275, People's Republic of China
| | - Savas Delikanli
- Department of Electrical and Electronics Engineering and Department of Physics, UNAM-Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, Ankara06800, Turkey
| | - Baiquan Liu
- School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou510275, People's Republic of China
| | - Jacek J Jasieniak
- ARC Centre of Excellence in Exciton Science, Department of Materials Science and Engineering, Monash University, Clayton Campus, Melbourne, Victoria3800, Australia
| | - Manoj Sharma
- LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore639798, Singapore
- ARC Centre of Excellence in Exciton Science, Department of Materials Science and Engineering, Monash University, Clayton Campus, Melbourne, Victoria3800, Australia
| | - Hilmi Volkan Demir
- LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore639798, Singapore
- Department of Electrical and Electronics Engineering and Department of Physics, UNAM-Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, Ankara06800, Turkey
- School of Physical and Mathematical Sciences, Division of Physics and Applied Physics, Nanyang Technological University, Singapore639798, Singapore
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Sun J, Jiang J, Deng Y, Wang Y, Li L, Lou Z, Hou Y, Teng F, Hu Y. Ionic Liquid-Gated Near-Infrared Polymer Phototransistors and Their Persistent Photoconductivity Application in Optical Memory. ACS APPLIED MATERIALS & INTERFACES 2022; 14:57082-57091. [PMID: 36523155 DOI: 10.1021/acsami.2c17737] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Organic phototransistors (OPTs) based on polymers have attracted substantial attention due to their excellent signal amplification, significant noise reduction, and solution process. Recently, the near-infrared (NIR) detection becomes urgent for OPTs with the increased demand for biomedicine, medical diagnostics, and health monitoring. To achieve this goal, a low working voltage of the OPTs is highly desirable. Therefore, the traditional dielectric gate can be replaced by an electrolyte gate to form electrolyte-gated organic phototransistors (EGOPTs), which are not only able to work at voltages below 1.0 V but also are biocompatible. PCDTPT, one of the most popular narrow band gap donor-acceptor copolymer, has been rarely studied in EGOPTs. In this work, an organic NIR-sensitive EGOPT based on PCDTPT is demonstrated with the detectivity of 7.08 × 1011 Jones and the photoresponsivity of 3.56 A/W at a low operating voltage. In addition, an existing persistent photoconductivity (PPC) phenomenon was also observed when the device was exposed to air. The PPC characteristic of the EGOPT in air has been used to achieve a phototransistor memory, and the gate bias can directly eliminate the PPC as an erasing operation. This work reveals the underlying mechanism of the electrolyte-gated organic phototransistor memories and broadens the application of the EGOPTs.
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Affiliation(s)
- Jun Sun
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing100044, P.R. China
| | - Jingzan Jiang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing100044, P.R. China
| | - Yadan Deng
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing100044, P.R. China
| | - Yunuan Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing100044, P.R. China
| | - Ling Li
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing100044, P.R. China
| | - Zhidong Lou
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing100044, P.R. China
| | - Yanbing Hou
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing100044, P.R. China
| | - Feng Teng
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing100044, P.R. China
| | - Yufeng Hu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing100044, P.R. China
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Han H, Hu S, Zhang S, Li X, Sun H, Chen J, Liu B, Liu C, Chen W, Zhang Q. Achieving Solution‐Processed Non‐Doped Single‐Emitting‐Layer White Organic Light‐Emitting Diodes through Adjusting Pyrene‐Based Polyaromatic Hydrocarbon. Chemistry 2022; 28:e202201741. [DOI: 10.1002/chem.202201741] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/06/2022] [Indexed: 11/07/2022]
Affiliation(s)
- Hongjing Han
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 P. R. China
| | - Sujuan Hu
- School of Electronics and Information Technology Sun Yat-sen University Guangzhou 510275 P. R. China
| | - Shilong Zhang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 P. R. China
| | - Xiaojun Li
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 P. R. China
| | - Hailing Sun
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 P. R. China
| | - Jiawen Chen
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 P. R. China
| | - Baiquan Liu
- School of Electronics and Information Technology Sun Yat-sen University Guangzhou 510275 P. R. China
| | - Chuan Liu
- School of Electronics and Information Technology Sun Yat-sen University Guangzhou 510275 P. R. China
| | - Wangqiao Chen
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 P. R. China
| | - Qichun Zhang
- Department of Materials Science and Engineering City University of Hong Kong Hong Kong 999077 P. R. China
- Center of Super-Diamond and Advanced Films (COSDAF) City University of Hong Kong Hong Kong SAR 999077 P. R. China
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Hu S, Shabani F, Liu B, Zhang L, Guo M, Lu G, Zhou Z, Wang J, Huang JC, Min Y, Xue Q, Demir HV, Liu C. High-Performance Deep Red Colloidal Quantum Well Light-Emitting Diodes Enabled by the Understanding of Charge Dynamics. ACS NANO 2022; 16:10840-10851. [PMID: 35816171 DOI: 10.1021/acsnano.2c02967] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Colloidal quantum wells (CQWs) have emerged as a promising family of two-dimensional (2D) optoelectronic materials with outstanding properties, including ultranarrow luminescence emission, nearly unity quantum yield, and large extinction coefficient. However, the performance of CQWs-based light-emitting diodes (CQW-LEDs) is far from satisfactory, particularly for deep red emissions (≥660 nm). Herein, high efficiency, ultra-low-efficiency roll-off, high luminance, and extremely saturated deep red CQW-LEDs are reported. A key feature for the high performance is the understanding of charge dynamics achieved by introducing an efficient electron transport layer, ZnMgO, which enables balanced charge injection, reduced nonradiative channels, and smooth films. The CQW-LEDs based on (CdSe/CdS)@(CdS/CdZnS) ((core/crown)@(colloidal atomic layer deposition shell/hot injection shell)) show an external quantum efficiency of 9.89%, which is a record value for 2D nanocrystal LEDs with deep red emissions. The device also exhibits an ultra-low-efficiency roll-off and a high luminance of 3853 cd m-2. Additionally, an exceptional color purity with the CIE coordinates of (0.719, 0.278) is obtained, indicating that the color gamut covers 102% of the International Telecommunication Union Recommendation BT 2020 (Rec. 2020) standard in the CIE 1931 color space, which is the best for CQW-LEDs. Furthermore, an active-matrix CQW-LED pixel circuit is demonstrated. The findings imply that the understanding of charge dynamics not only enables high-performance CQW-LEDs and can be further applied to other kinds of nanocrystal LEDs but also is beneficial to the development of CQW-LEDs-based display technology and related integrated optoelectronics.
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Affiliation(s)
- Sujuan Hu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Farzan Shabani
- UNAM-Institute of Materials Science and Nanotechnology, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey
| | - Baiquan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Lingjiao Zhang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Min Guo
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Guanhua Lu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Zhisheng Zhou
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, School of Materials Science and Engineering, South China University of Technology, 381 Wushan Road, Guangzhou 510640, China
| | - Jing Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Jacob C Huang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
- Hong Kong Institute for Advanced Study, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yonggang Min
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
| | - Qifan Xue
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, School of Materials Science and Engineering, South China University of Technology, 381 Wushan Road, Guangzhou 510640, China
| | - Hilmi Volkan Demir
- UNAM-Institute of Materials Science and Nanotechnology, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Materials Sciences, School of Materials Science and Nanotechnology, Nanyang Technological University, Singapore 639798
| | - Chuan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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Band Structure Near the Dirac Point in HgTe Quantum Wells with Critical Thickness. NANOMATERIALS 2022; 12:nano12142492. [PMID: 35889716 PMCID: PMC9324450 DOI: 10.3390/nano12142492] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/07/2022] [Revised: 07/03/2022] [Accepted: 07/12/2022] [Indexed: 02/04/2023]
Abstract
Mercury telluride (HgTe) thin films with a critical thickness of 6.5 nm are predicted to possess a gapless Dirac-like band structure. We report a comprehensive study on gated and optically doped samples by magnetooptical spectroscopy in the THz range. The quasi-classical analysis of the cyclotron resonance allowed the mapping of the band dispersion of Dirac charge carriers in a broad range of electron and hole doping. A smooth transition through the charge neutrality point between Dirac holes and electrons was observed. An additional peak coming from a second type of holes with an almost density-independent mass of around 0.04m0 was detected in the hole-doping range and attributed to an asymmetric spin splitting of the Dirac cone. Spectroscopic evidence for disorder-induced band energy fluctuations could not be detected in present cyclotron resonance experiments.
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Abstract
Due to the untiring efforts of scientists and researchers on oxide semiconductor materials, processes, and devices, the applications for oxide-based thin film transistors (TFTs) have been researched and promoted on a large scale. With the advantages of relatively high carrier mobility, low off-current, good process compatibility, optical transparency, low cost, and especially flexibility, oxide-based TFTs have already been adapted for not only displays (e.g., liquid crystal display (LCD), organic light emitting diode (OLED), micro-light-emitting diode (Micro-LED), virtual reality/augmented reality (VR/AR) and electronic paper displays (EPD)) but also large-area electronics, analog circuits, and digital circuits. Furthermore, as the requirement of TFT technology increases, low temperature poly-silicon and oxide (LTPO) TFTs, which combine p-type LTPS and n-type oxide TFT on the same substrate, have drawn further interest for realizing the hybrid complementary metal oxide semiconductor (CMOS) circuit. This invited review provides the current progress on applications of oxide-based TFTs. Typical device configurations of TFTs are first described. Then, the strategies to apply oxide-based TFTs for improving the display quality with different compensation technologies and obtaining higher performance integrated circuits are highlighted. Finally, an outlook for the future development of oxide-based TFTs is given.
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Shabani F, Dehghanpour Baruj H, Yurdakul I, Delikanli S, Gheshlaghi N, Isik F, Liu B, Altintas Y, Canımkurbey B, Demir HV. Deep-Red-Emitting Colloidal Quantum Well Light-Emitting Diodes Enabled through a Complex Design of Core/Crown/Double Shell Heterostructure. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2106115. [PMID: 34894078 DOI: 10.1002/smll.202106115] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2021] [Revised: 11/13/2021] [Indexed: 06/14/2023]
Abstract
Extending the emission peak wavelength of quasi-2D colloidal quantum wells has been an important quest to fully exploit the potential of these materials, which has not been possible due to the complications arising from the partial dissolution and recrystallization during growth to date. Here, the synthetic pathway of (CdSe/CdS)@(1-4 CdS/CdZnS) (core/crown)@(colloidal atomic layer deposition shell/hot injection shell) hetero-nanoplatelets (NPLs) using multiple techniques, which together enable highly efficient emission beyond 700 nm in the deep-red region, is proposed and demonstrated. Given the challenges of using conventional hot injection procedure, a method that allows to obtain sufficiently thick and passivated NPLs as the seeds is developed. Consequently, through the final hot injection shell coating, thick NPLs with superior optical properties including a high photoluminescence quantum yield of 88% are achieved. These NPLs emitting at 701 nm exhibit a full-width-at-half-maximum of 26 nm, enabled by the successfully maintained quasi-2D shape and minimum defects of the resulting heterostructure. The deep-red light-emitting diode (LED) device fabricated with these NPLs has shown to yield a high external quantum efficiency of 6.8% at 701 nm, which is on par with other types of LEDs in this spectral range.
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Affiliation(s)
- Farzan Shabani
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Hamed Dehghanpour Baruj
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Iklim Yurdakul
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Savas Delikanli
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Negar Gheshlaghi
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Furkan Isik
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Baiquan Liu
- School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Yemliha Altintas
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- Department of Materials Science and Nanotechnology, Abdullah Gül University, Kayseri, TR-38080, Turkey
| | - Betül Canımkurbey
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- Central Research Laboratory, Amasya University, Amasya, 05100, Turkey
| | - Hilmi Volkan Demir
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
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Zhang L, Wang C, Jin Y, Xu T. Wide color gamut white light-emitting diodes based on two-dimensional semiconductor nanoplatelets. OPTICS EXPRESS 2022; 30:3719-3728. [PMID: 35209624 DOI: 10.1364/oe.444858] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2021] [Accepted: 01/09/2022] [Indexed: 06/14/2023]
Abstract
II-VI colloidal semiconductor nanoplatelets (NPLs) are a kind of two-dimensional nanomaterial with uniform thickness at the atomic scale, thus leading to the characteristics of tunable emission wavelength and narrow bandwidth. Here, we report wide color gamut white light-emitting diodes (WLEDs) based on high-performance CdSe-based heterostructure NPLs. The narrow-band CdSe/CdS core/crown and CdSe/ZnCdS core/shell NPLs are chosen as green (∼521 nm) and red (∼653 nm) luminescent materials, respectively. They represent excellent PL properties, such as narrow linewidth, high quantum yields, and high photostability. Importantly, the further fabricated NPL-WLEDs exhibits an ultrawide color gamut covering up ∼141.7% of the NTSC standard in the CIE 1931 color space and excellent stability towards driving currents. These outstanding device performances indicate that the colloidal semiconductor NPLs possess huge potentiality to achieve higher color saturation and wide color gamut for applications in new-generation lightings and displays.
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12
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Najafi A, Sharma M, Delikanli S, Bhattacharya A, Murphy JR, Pientka J, Sharma A, Quinn AP, Erdem O, Kattel S, Kelestemur Y, Kovalenko MV, Rice WD, Demir HV, Petrou A. Light-Induced Paramagnetism in Colloidal Ag +-Doped CdSe Nanoplatelets. J Phys Chem Lett 2021; 12:2892-2899. [PMID: 33724845 DOI: 10.1021/acs.jpclett.1c00398] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We describe a study of the magneto-optical properties of Ag+-doped CdSe colloidal nanoplatelets (NPLs) that were grown using a novel doping technique. In this work, we used magnetic circularly polarized luminescence and magnetic circular dichroism spectroscopy to study light-induced magnetism for the first time in 2D solution-processed structures doped with nominally nonmagnetic Ag+ impurities. The excitonic circular polarization (PX) and the exciton Zeeman splitting (ΔEZ) were recorded as a function of the magnetic field (B) and temperature (T). Both ΔEZ and PX have a Brillouin-function-like dependence on B and T, verifying the presence of paramagnetism in Ag+-doped CdSe NPLs. The observed light-induced magnetism is attributed to the transformation of nonmagnetic Ag+ ions into Ag2+, which have a nonzero magnetic moment. This work points to the possibility of incorporating these nanoplatelets into spintronic devices, in which light can be used to control the spin injection.
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Affiliation(s)
- Arman Najafi
- Department of Physics, University at Buffalo SUNY, Buffalo, New York 14260, United States
| | - Manoj Sharma
- Luminous! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering and Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 639798
- Department of Electrical and Electronics Engineering and Department of Physics, UNAM-Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey
| | - Savas Delikanli
- Luminous! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering and Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 639798
- Department of Electrical and Electronics Engineering and Department of Physics, UNAM-Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey
| | - Arinjoy Bhattacharya
- Department of Physics, University at Buffalo SUNY, Buffalo, New York 14260, United States
| | - Joseph R Murphy
- Department of Chemistry and Physics, Southeast Missouri State University, Cape Girardeau, Missouri 63701, United States
- Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States
| | - James Pientka
- Department of Physics, St. Bonaventure University, St. Bonaventure, New York 14778, United States
| | - Ashma Sharma
- Luminous! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering and Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 639798
| | - Alexander P Quinn
- Department of Physics, University at Buffalo SUNY, Buffalo, New York 14260, United States
| | - Onur Erdem
- Department of Electrical and Electronics Engineering and Department of Physics, UNAM-Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey
| | - Subash Kattel
- Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States
| | - Yusuf Kelestemur
- Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg 1, CH-8093 Zürich, Switzerland
- Department of Metallurgical and Materials Engineering, Atilim University, Ankara 06830, Turkey
| | - Maksym V Kovalenko
- Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg 1, CH-8093 Zürich, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - William D Rice
- Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States
| | - Hilmi Volkan Demir
- Luminous! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering and Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 639798
- Department of Electrical and Electronics Engineering and Department of Physics, UNAM-Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey
| | - Athos Petrou
- Department of Physics, University at Buffalo SUNY, Buffalo, New York 14260, United States
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Xiao P, Yu Y, Cheng J, Chen Y, Yuan S, Chen J, Yuan J, Liu B. Advances in Perovskite Light-Emitting Diodes Possessing Improved Lifetime. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:E103. [PMID: 33406749 PMCID: PMC7823701 DOI: 10.3390/nano11010103] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/07/2020] [Revised: 12/23/2020] [Accepted: 12/26/2020] [Indexed: 12/14/2022]
Abstract
Recently, perovskite light-emitting diodes (PeLEDs) are seeing an increasing academic and industrial interest with a potential for a broad range of technologies including display, lighting, and signaling. The maximum external quantum efficiency of PeLEDs can overtake 20% nowadays, however, the lifetime of PeLEDs is still far from the demand of practical applications. In this review, state-of-the-art concepts to improve the lifetime of PeLEDs are comprehensively summarized from the perspective of the design of perovskite emitting materials, the innovation of device engineering, the manipulation of optical effects, and the introduction of advanced encapsulations. First, the fundamental concepts determining the lifetime of PeLEDs are presented. Then, the strategies to improve the lifetime of both organic-inorganic hybrid and all-inorganic PeLEDs are highlighted. Particularly, the approaches to manage optical effects and encapsulations for the improved lifetime, which are negligibly studied in PeLEDs, are discussed based on the related concepts of organic LEDs and Cd-based quantum-dot LEDs, which is beneficial to insightfully understand the lifetime of PeLEDs. At last, the challenges and opportunities to further enhance the lifetime of PeLEDs are introduced.
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Affiliation(s)
- Peng Xiao
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Yicong Yu
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Junyang Cheng
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Yonglong Chen
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Shengjin Yuan
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Jianwen Chen
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Jian Yuan
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Baiquan Liu
- School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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15
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Luo D, Wang L, Qiu Y, Huang R, Liu B. Emergence of Impurity-Doped Nanocrystal Light-Emitting Diodes. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:E1226. [PMID: 32599722 PMCID: PMC7353084 DOI: 10.3390/nano10061226] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/26/2020] [Revised: 06/17/2020] [Accepted: 06/17/2020] [Indexed: 11/16/2022]
Abstract
In recent years, impurity-doped nanocrystal light-emitting diodes (LEDs) have aroused both academic and industrial interest since they are highly promising to satisfy the increasing demand of display, lighting, and signaling technologies. Compared with undoped counterparts, impurity-doped nanocrystal LEDs have been demonstrated to possess many extraordinary characteristics including enhanced efficiency, increased luminance, reduced voltage, and prolonged stability. In this review, recent state-of-the-art concepts to achieve high-performance impurity-doped nanocrystal LEDs are summarized. Firstly, the fundamental concepts of impurity-doped nanocrystal LEDs are presented. Then, the strategies to enhance the performance of impurity-doped nanocrystal LEDs via both material design and device engineering are introduced. In particular, the emergence of three types of impurity-doped nanocrystal LEDs is comprehensively highlighted, namely impurity-doped colloidal quantum dot LEDs, impurity-doped perovskite LEDs, and impurity-doped colloidal quantum well LEDs. At last, the challenges and the opportunities to further improve the performance of impurity-doped nanocrystal LEDs are described.
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Affiliation(s)
- Dongxiang Luo
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, China;
| | - Lin Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore;
| | - Ying Qiu
- Guangdong R&D Center for Technological Economy, Guangzhou 510000, China
| | - Runda Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China;
| | - Baiquan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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Qu J, Rastogi P, Gréboval C, Livache C, Dufour M, Chu A, Chee SS, Ramade J, Xu XZ, Ithurria S, Lhuillier E. Nanoplatelet-Based Light-Emitting Diode and Its Use in All-Nanocrystal LiFi-like Communication. ACS APPLIED MATERIALS & INTERFACES 2020; 12:22058-22065. [PMID: 32292032 DOI: 10.1021/acsami.0c05264] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Now that colloidal nanocrystals (NCs) have been integrated as green and red sources for liquid crystal displays, the next challenge for quantum dots is their use in electrically driven light-emitting diodes (LEDs). Among various colloidal NCs, nanoplatelets (NPLs) have appeared as promising candidates for light-emitting devices because their two-dimensional shape allows a narrow luminescence spectrum, directional emission, and high light extraction. To reach high quantum efficiency, it is critical to grow core/shell structures. High temperature growth of the shells seems to be a better strategy than previously reported low-temperature approaches to obtain bright NPLs. Here, we synthesize CdSe/CdZnS core/shell NPLs whose shell alloy content is tuned to optimize the charge injection in the LED structure. The obtained LED has exceptionally low turn-on voltage, long-term stability (>3100 h at 100 cd m-2), external quantum efficiency above 5%, and luminance up to 35,000 cd m-2. We study the low-temperature performance of the LED and find that there is a delay of droop in terms of current density as temperature decreases. In the last part of the paper, we design a large LED (56 mm2 emitting area) and test its potential for LiFi-like communication. In such an approach, the LED is not only a lightning source but also used to transmit a communication signal to a PbS quantum dot solar cell used as a broadband photodetector. Operating conditions compatible with both lighting and information transfer have been identified. This work paves the way toward an all NC-based communication setup.
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Affiliation(s)
- Junling Qu
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Prachi Rastogi
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Charlie Gréboval
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Clément Livache
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Marion Dufour
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Audrey Chu
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Sang-Soo Chee
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Julien Ramade
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Xiang Zhen Xu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
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Liu B, Altintas Y, Wang L, Shendre S, Sharma M, Sun H, Mutlugun E, Demir HV. Record High External Quantum Efficiency of 19.2% Achieved in Light-Emitting Diodes of Colloidal Quantum Wells Enabled by Hot-Injection Shell Growth. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1905824. [PMID: 31867764 DOI: 10.1002/adma.201905824] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2019] [Revised: 11/13/2019] [Indexed: 06/10/2023]
Abstract
Colloidal quantum wells (CQWs) are regarded as a highly promising class of optoelectronic materials, thanks to their unique excitonic characteristics of high extinction coefficients and ultranarrow emission bandwidths. Although the exploration of CQWs in light-emitting diodes (LEDs) is impressive, the performance of CQW-LEDs lags far behind other types of soft-material LEDs (e.g., organic LEDs, colloidal-quantum-dot LEDs, and perovskite LEDs). Herein, high-efficiency CQW-LEDs reaching close to the theoretical limit are reported. A key factor for this high performance is the exploitation of hot-injection shell (HIS) growth of CQWs, which enables a near-unity photoluminescence quantum yield (PLQY), reduces nonradiative channels, ensures smooth films, and enhances the stability. Remarkably, the PLQY remains 95% in solution and 87% in film despite rigorous cleaning. Through systematically understanding their shape-, composition-, and device-engineering, the CQW-LEDs using CdSe/Cd0.25 Zn0.75 S core/HIS CQWs exhibit a maximum external quantum efficiency of 19.2%. Additionally, a high luminance of 23 490 cd m-2 , extremely saturated red color with the Commission Internationale de L'Eclairage (CIE) coordinates of (0.715, 0.283), and stable emission are obtained. The findings indicate that HIS-grown CQWs enable high-performance solution-processed LEDs, which may pave the path for future CQW-based display and lighting technologies.
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Affiliation(s)
- Baiquan Liu
- Luminous! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering and School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yemliha Altintas
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM-Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- Department of Materials Science and Nanotechnology and Department of Electrical-Electronics Engineering, Abdullah Gül University, Kayseri, TR-38080, Turkey
| | - Lin Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Sushant Shendre
- Luminous! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering and School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 639798, Singapore
| | - Manoj Sharma
- Luminous! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering and School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 639798, Singapore
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM-Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Handong Sun
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Evren Mutlugun
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM-Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- Department of Materials Science and Nanotechnology and Department of Electrical-Electronics Engineering, Abdullah Gül University, Kayseri, TR-38080, Turkey
| | - Hilmi Volkan Demir
- Luminous! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering and School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 639798, Singapore
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM-Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
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