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Nath SK, Das SK, Nandi SK, Xi C, Marquez CV, Rúa A, Uenuma M, Wang Z, Zhang S, Zhu RJ, Eshraghian J, Sun X, Lu T, Bian Y, Syed N, Pan W, Wang H, Lei W, Fu L, Faraone L, Liu Y, Elliman RG. Optically Tunable Electrical Oscillations in Oxide-Based Memristors for Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400904. [PMID: 38516720 DOI: 10.1002/adma.202400904] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2024] [Revised: 03/18/2024] [Indexed: 03/23/2024]
Abstract
The application of hardware-based neural networks can be enhanced by integrating sensory neurons and synapses that enable direct input from external stimuli. This work reports direct optical control of an oscillatory neuron based on volatile threshold switching in V3O5. The devices exhibit electroforming-free operation with switching parameters that can be tuned by optical illumination. Using temperature-dependent electrical measurements, conductive atomic force microscopy (C-AFM), in situ thermal imaging, and lumped element modelling, it is shown that the changes in switching parameters, including threshold and hold voltages, arise from overall conductivity increase of the oxide film due to the contribution of both photoconductive and bolometric characteristics of V3O5, which eventually affects the oscillation dynamics. Furthermore, V3O5 is identified as a new bolometric material with a temperature coefficient of resistance (TCR) as high as -4.6% K-1 at 423 K. The utility of these devices is illustrated by demonstrating in-sensor reservoir computing with reduced computational effort and an optical encoding layer for spiking neural network (SNN), respectively, using a simulated array of devices.
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Affiliation(s)
- Shimul Kanti Nath
- Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Perth, WA, 6009, Australia
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales (UNSW Sydney), Kensington, NSW, 2052, Australia
| | - Sujan Kumar Das
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
- Department of Physics, Jahangirnagar Univeristy, Savar, Dhaka, 1342, Bangladesh
| | - Sanjoy Kumar Nandi
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Chen Xi
- Department of Electrical and Electronic Engineering, the University of Hong Kong, Pok Fu Lam Rd, Hong Kong Island, Hong Kong
| | | | - Armando Rúa
- Department of Physics, University of Puerto Rico, Mayaguez, PR, 00681, USA
| | - Mutsunori Uenuma
- Information Device Science Laboratory, Nara Institute of Science and Technology (NAIST), Nara, 630-0192, Japan
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, the University of Hong Kong, Pok Fu Lam Rd, Hong Kong Island, Hong Kong
| | - Songqing Zhang
- Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Perth, WA, 6009, Australia
| | - Rui-Jie Zhu
- Department of Electrical and Computer Engineering, University of California, Santa Cruz, CA, 95064, USA
| | - Jason Eshraghian
- Department of Electrical and Computer Engineering, University of California, Santa Cruz, CA, 95064, USA
| | - Xiao Sun
- John de Laeter Centre, Curtin University, Perth, WA, 6102, Australia
| | - Teng Lu
- Research School of Chemistry, The Australian National University, Canberra, ACT, 2601, Australia
| | - Yue Bian
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Canberra, ACT, 2601, Australia
| | - Nitu Syed
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, School of Physics, University of Melbourne, Melbourne, Victoria, 3010, Australia
| | - Wenwu Pan
- Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Perth, WA, 6009, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Perth, WA, 6009, Australia
| | - Han Wang
- Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Perth, WA, 6009, Australia
| | - Wen Lei
- Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Perth, WA, 6009, Australia
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Canberra, ACT, 2601, Australia
| | - Lorenzo Faraone
- Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Perth, WA, 6009, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Perth, WA, 6009, Australia
| | - Yun Liu
- Research School of Chemistry, The Australian National University, Canberra, ACT, 2601, Australia
| | - Robert G Elliman
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
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2
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Kang Y, Pei Y, He D, Xu H, Ma M, Yan J, Jiang C, Li W, Xiao X. Spatially selective p-type doping for constructing lateral WS 2 p-n homojunction via low-energy nitrogen ion implantation. LIGHT, SCIENCE & APPLICATIONS 2024; 13:127. [PMID: 38821920 PMCID: PMC11143290 DOI: 10.1038/s41377-024-01477-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Revised: 04/13/2024] [Accepted: 05/10/2024] [Indexed: 06/02/2024]
Abstract
The construction of lateral p-n junctions is very important and challenging in two-dimensional (2D) semiconductor manufacturing process. Previous researches have demonstrated that vertical p-n junction can be prepared simply by vertical stacking of 2D materials. However, interface pollution and large area scalability are challenges that are difficult to overcome with vertical stacking technology. Constructing 2D lateral p-n homojunction is an effective strategy to address these issues. Spatially selective p-type doping of 2D semiconductors is expected to construct lateral p-n homojunction. In this work, we have developed a low-energy ion implantation system that reduces the implanted energy to 300 eV. Low-energy implantation can form a shallow implantation depth, which is more suitable for modulating the electrical and optical properties of 2D materials. Hence, we utilize low-energy ion implantation to directly dope nitrogen ions into few-layer WS2 and successfully realize a precise regulation for WS2 with its conductivity type transforming from n-type to bipolar or even p-type conduction. Furthermore, the universality of this method is demonstrated by extending it to other 2D semiconductors, including WSe2, SnS2 and MoS2. Based on this method, a lateral WS2 p-n homojunction is fabricated, which exhibits significant rectification characteristics. A photodetector based on p-n junction with photovoltaic effect is also prepared, and the open circuit voltage can reach to 0.39 V. This work provides an effective way for controllable doping of 2D semiconductors.
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Affiliation(s)
- Yufan Kang
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Yongfeng Pei
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Dong He
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Hang Xu
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Mingjun Ma
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Jialu Yan
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Changzhong Jiang
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Wenqing Li
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China.
| | - Xiangheng Xiao
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China.
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3
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Dang LY, Wei Z, Guo J, Cui TH, Wang Y, Han JC, Wang GG. Efficient Carrier Transport in 2D Bi 2O 2Se/CsBi 3I 10 Perovskite Heterojunction Enables Highly-Sensitive Broadband Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306600. [PMID: 38009782 DOI: 10.1002/smll.202306600] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Revised: 10/20/2023] [Indexed: 11/29/2023]
Abstract
2D Bi2O2Se has recently garnered significant attention in the electronics and optoelectronics fields due to its remarkable photosensitivity, broad spectral absorption, and excellent long-term environmental stability. However, the development of integrated Bi2O2Se photodetector with high performance and low-power consumption is limited by material synthesis method and the inherent high carrier concentration of Bi2O2Se. Here, a type-I heterojunction is presented, comprising 2D Bi2O2Se and lead-free bismuth perovskite CsBi3I10, for fast response and broadband detection. Through effective charge transfer and strong coupling effect at the interfaces of Bi2O2Se and CsBi3I10, the response time is accelerated to 4.1 µs, and the detection range is expanded from ultraviolet to near-infrared spectral regions (365-1500 nm). The as-fabricated photodetector exhibits a responsivity of 48.63 AW-1 and a detectivity of 1.22×1012 Jones at 808 nm. Moreover, efficient modulation of the dominant photocurrent generation mechanism from photoconductive to photogating effect leads to sensitive response exceeding 103 AW-1 for heterojunction-based photo field effect transistor (photo-FETs). Utilizing the large-scale growth of both Bi2O2Se and CsBi3I10, the as-fabricated integrated photodetector array demonstrates outstanding homogeneity and stability of photo-response performance. The proposed 2D Bi2O2Se/CsBi3I10 perovskite heterojunction holds promising prospects for the future-generation photodetector arrays and integrated optoelectronic systems.
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Affiliation(s)
- Le-Yang Dang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, P. R. China
| | - Zhan Wei
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, P. R. China
| | - Jing Guo
- Shenzhen International Graduate School and Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen, 518055, China
| | - Tian-Hao Cui
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, P. R. China
| | - Yongjie Wang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, P. R. China
| | - Jie-Cai Han
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, 150080, P. R. China
| | - Gui-Gen Wang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, P. R. China
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, 150080, P. R. China
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4
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Li H, Nairan A, Niu X, Chen Y, Sun H, Lai L, Qin J, Dang L, Wang G, Khan U, He F. A hidden phase uncovered by ultrafast carrier dynamics in thin Bi 2O 2Se. NANOSCALE 2024; 16:4189-4196. [PMID: 38323830 DOI: 10.1039/d3nr05625b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/08/2024]
Abstract
Bi2O2Se has attracted intensive attention due to its potential in electronics, optoelectronics, and ferroelectric applications. Despite that, there have only been a handful of experimental studies based on ultrafast spectroscopy to elucidate the carrier dynamics in Bi2O2Se thin films. Besides, different groups have reported various ultrafast timescales and associated mechanisms across films of different thicknesses. A comprehensive understanding in relation to thickness and fluence is still lacking. In this work, we have systematically explored the thickness-dependent Raman spectroscopy and ultrafast carrier dynamics in chemical vapor deposition (CVD)-grown Bi2O2Se thin films on a mica substrate with thicknesses varying from 22.44 nm down to 4.62 nm in both low and high pump fluence regions. Combining the thickness dependence and fluence dependence of the slow decay time, we demonstrate a hidden photoinduced ferroelectric transition in the thinner (<8 nm) Bi2O2Se films below the material damage thresholds, influenced by substrate-induced compressive strain and far-from-equilibrium excitation. Moreover, this transition can be manifested at high electronic excitation densities. Our results deepen the understanding of the interplay between the ferroelectric phase and semiconducting characteristics of Bi2O2Se thin films, offering potential applications in optoelectronic devices that benefit from the ferroelectric transition.
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Affiliation(s)
- Hao Li
- State Key Laboratory on Tunable Laser Technology, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China
- Guangdong Provincial Key Laboratory of Aerospace Communication and Networking Technology, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China.
| | - Adeela Nairan
- Institute of Functional Porous Materials, School of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou 310018, P. R. China.
| | - Xiaoran Niu
- State Key Laboratory on Tunable Laser Technology, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China
- Guangdong Provincial Key Laboratory of Aerospace Communication and Networking Technology, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China.
| | - Yuxiang Chen
- School of Science and Ministry of Industry and Information Technology, Key Laboratory of Micro-Nano Opto-electronic Information System, Harbin Institute of Technology (Shenzhen), Shenzhen, Guangdong 518055, P. R. China
| | - Huarui Sun
- School of Science and Ministry of Industry and Information Technology, Key Laboratory of Micro-Nano Opto-electronic Information System, Harbin Institute of Technology (Shenzhen), Shenzhen, Guangdong 518055, P. R. China
| | - Linqing Lai
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China
| | - Jingkai Qin
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China
| | - Leyang Dang
- Shenzhen Key Laboratory for Advanced Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China
| | - Guigen Wang
- Shenzhen Key Laboratory for Advanced Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China
| | - Usman Khan
- Institute of Functional Porous Materials, School of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou 310018, P. R. China.
| | - Feng He
- State Key Laboratory on Tunable Laser Technology, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China
- Guangdong Provincial Key Laboratory of Aerospace Communication and Networking Technology, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China.
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5
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Chen C, Yang Z, Liu R, Xue L, Xu LC. Insights into electron dynamics in two-dimensional bismuth oxyselenide: a monolayer-bilayer perspective. Phys Chem Chem Phys 2024; 26:5438-5446. [PMID: 38275150 DOI: 10.1039/d3cp05357a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2024]
Abstract
Bismuth oxyselenide (Bi2O2Se), an emerging 2D semiconductor material, has garnered substantial attention owing to its remarkable properties, including air stability, elevated carrier mobility, and ultrafast optical response. In this study, we conduct a comparative analysis of electron excitation and relaxation processes in monolayer and bilayer Bi2O2Se. Our findings reveal that monolayer Bi2O2Se exhibits parity-forbidden transitions between the band edges at the Γ point, whereas bilayer Bi2O2Se demonstrates parity activity, providing the bilayer with an advantage in light absorption. Employing nonadiabatic molecular dynamics simulations, we uncover a two-stage hot-electron relaxation process-initially fast followed by slow-in both monolayer and bilayer Bi2O2Se within the conduction band. Despite the presence of weak nonadiabatic coupling between the CBM + 1 and CBM, limiting hot electron relaxation, the monolayer displays a shorter relaxation time due to its higher phonon-coupled frequency and smaller energy difference. Our investigation sheds light on the layer-specific excitation properties of 2D Bi2O2Se layered materials, providing crucial insights for the strategic design of photonic devices utilizing 2D materials.
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Affiliation(s)
- Cuifan Chen
- College of Physics, Taiyuan University of Technology, Jinzhong 030600, China.
| | - Zhi Yang
- College of Physics, Taiyuan University of Technology, Jinzhong 030600, China.
| | - Ruiping Liu
- College of Physics, Taiyuan University of Technology, Jinzhong 030600, China.
| | - Lin Xue
- College of Physics, Taiyuan University of Technology, Jinzhong 030600, China.
| | - Li-Chun Xu
- College of Physics, Taiyuan University of Technology, Jinzhong 030600, China.
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6
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Hong C, Oh S, Dat VK, Pak S, Cha S, Ko KH, Choi GM, Low T, Oh SH, Kim JH. Engineering electrode interfaces for telecom-band photodetection in MoS 2/Au heterostructures via sub-band light absorption. LIGHT, SCIENCE & APPLICATIONS 2023; 12:280. [PMID: 37996413 PMCID: PMC10667329 DOI: 10.1038/s41377-023-01308-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2023] [Revised: 09/27/2023] [Accepted: 10/13/2023] [Indexed: 11/25/2023]
Abstract
Transition metal dichalcogenide (TMD) layered semiconductors possess immense potential in the design of photonic, electronic, optoelectronic, and sensor devices. However, the sub-bandgap light absorption of TMD in the range from near-infrared (NIR) to short-wavelength infrared (SWIR) is insufficient for applications beyond the bandgap limit. Herein, we report that the sub-bandgap photoresponse of MoS2/Au heterostructures can be robustly modulated by the electrode fabrication method employed. We observed up to 60% sub-bandgap absorption in the MoS2/Au heterostructure, which includes the hybridized interface, where the Au layer was applied via sputter deposition. The greatly enhanced absorption of sub-bandgap light is due to the planar cavity formed by MoS2 and Au; as such, the absorption spectrum can be tuned by altering the thickness of the MoS2 layer. Photocurrent in the SWIR wavelength range increases due to increased absorption, which means that broad wavelength detection from visible toward SWIR is possible. We also achieved rapid photoresponse (~150 µs) and high responsivity (17 mA W-1) at an excitation wavelength of 1550 nm. Our findings demonstrate a facile method for optical property modulation using metal electrode engineering and for realizing SWIR photodetection in wide-bandgap 2D materials.
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Affiliation(s)
- Chengyun Hong
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Saejin Oh
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Vu Khac Dat
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Sangyeon Pak
- School of Electronic and Electrical Engineering, Hongik University, Seoul, 04066, Republic of Korea
| | - SeungNam Cha
- Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Kyung-Hun Ko
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Gyung-Min Choi
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Tony Low
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA.
| | - Sang-Hyun Oh
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA.
| | - Ji-Hee Kim
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea.
- Department of Physics, Pusan National University, Busan, 46241, Republic of Korea.
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7
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Wang Z, Wei L, Wang S, Wu T, Sun L, Ma C, Tao X, Wang S. 2D SiP 2/h-BN for a Gate-Controlled Phototransistor with Ultrahigh Sensitivity. ACS APPLIED MATERIALS & INTERFACES 2023; 15:15810-15818. [PMID: 36939047 DOI: 10.1021/acsami.2c19803] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials are extremely attractive for the construction of highly sensitive photodetectors due to their unique electronic and optical properties. However, developing 2D photodetectors with ultrahigh sensitivity for extremely low-light-level detection is still a challenge owing to the limitation of high dark current and low detectivity. Herein, a gate-controlled phototransistor based on 2D SiP2/hexagonal boron nitride (h-BN) was rationally designed and demonstrated ultrahigh sensitivity for the first time. With a back-gate device geometry, the SiP2/h-BN phototransistor exhibits an ultrahigh detectivity of 3.4 × 1013 Jones, which is one of the highest values among 2D material-based photodetectors. In addition, the phototransistor also shows a gate tunable responsivity of ≤43.5 A/W at a gate voltage of 30 V due to the photogating effect. The ultrahigh sensitivity of the SiP2-based phototransistor is attributed to the extremely low dark current suppressed by the phototransistor configuration and the improved photocurrent by using h-BN as a substrate to reduce charge scattering. This work provides a facile strategy for improving the detectivity of photodetectors and validates the great potential of 2D SiP2 phototransistors for ultrasensitive optoelectronic applications.
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Affiliation(s)
- Ziming Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Limei Wei
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Shilei Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Tiange Wu
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Lanjing Sun
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Chao Ma
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Xutang Tao
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Shanpeng Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
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8
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Saha S, Das KS, Pal P, Hazra S, Ghosh A, Bala S, Ghosh A, Das AK, Mondal R. A Silver-Based Integrated System Showing Mutually Inclusive Super Protonic Conductivity and Photoswitching Behavior. Inorg Chem 2023; 62:3485-3497. [PMID: 36780226 DOI: 10.1021/acs.inorgchem.2c03785] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/14/2023]
Abstract
Photoinduced electricity and proton conductivity led fuel cells have emerged, inter alia, as highly promising systems for unconventional energy harvesting. Notwithstanding their individual presence with widely acclaimed results, an integrating system with mutually inclusive manifestation of both features has hitherto not been reported in the literature. To achieve this objective, our approach was to design a ligand system incorporating prerequisite features of both systems, like extended conjugation instigating photophysical activity and functional groups facilitating ionic conduction. As such, we report herein the design, synthesis, and characterization of a pyridyl-pyrazole-based silver compound that exhibits an excellent photocurrent generation and very high proton conductivity. The X-ray single-crystal structure of the Ag complex fully supports our notion, showing extensive π-π conjugated aromatic rings with a protruding free sulfonic group, facing toward solvent-filled channels with numerous supramolecular interactions. The nanoscopic silver metallogel induces semiconductive features in the system which ultimately result in photoresponse behavior in terms of photocurrent generation with an whopping photocurrent gain (Ion/Ioff) of 21.2. To complete the idea of an integrated system, the proton conductivity values were also measured for both gel and crystalline states, while the former state yields a better result. The maximum proton conductivity value turns out to be 1.03 × 10-2 S cm-1 at 70 °C, which is higher than or comparable to those of well-known systems in the literature for proton conductivity.
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Affiliation(s)
- Sayan Saha
- School of Chemical Sciences, Indian Association for the Cultivation of Science, 2A &2B Raja S. C. Mullick Road Jadavpur, Kolkata 700 032, India
| | - Krishna Sundar Das
- School of Chemical Sciences, Indian Association for the Cultivation of Science, 2A &2B Raja S. C. Mullick Road Jadavpur, Kolkata 700 032, India
| | - Pulak Pal
- School of Physical Sciences, Indian Association for the Cultivation of Science, 2A &2B Raja S. C. Mullick Road Jadavpur, Kolkata 700 032, India
| | - Soumyajit Hazra
- School of Biological Sciences, Indian Association for the Cultivation of Science, 2A &2B Raja S. C. Mullick Road Jadavpur, Kolkata 700 032, India
| | - Avik Ghosh
- School of Mathematical & Computational Sciences, Indian Association for the Cultivation of Science, 2A &2B Raja S. C. Mullick Road Jadavpur, Kolkata 700 032, India
| | - Sukhen Bala
- School of Chemical Sciences, Indian Association for the Cultivation of Science, 2A &2B Raja S. C. Mullick Road Jadavpur, Kolkata 700 032, India
| | - Aswini Ghosh
- School of Physical Sciences, Indian Association for the Cultivation of Science, 2A &2B Raja S. C. Mullick Road Jadavpur, Kolkata 700 032, India
| | - Abhijit Kumar Das
- School of Mathematical & Computational Sciences, Indian Association for the Cultivation of Science, 2A &2B Raja S. C. Mullick Road Jadavpur, Kolkata 700 032, India
| | - Raju Mondal
- School of Chemical Sciences, Indian Association for the Cultivation of Science, 2A &2B Raja S. C. Mullick Road Jadavpur, Kolkata 700 032, India
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9
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Li Z, Jia B, Fang S, Li Q, Tian F, Li H, Liu R, Liu Y, Zhang L, Liu S(F, Liu B. Pressure-Tuning Photothermal Synergy to Optimize the Photoelectronic Properties in Amorphous Halide Perovskite Cs 3 Bi 2 I 9. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205837. [PMID: 36581471 PMCID: PMC9951572 DOI: 10.1002/advs.202205837] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/07/2022] [Revised: 11/12/2022] [Indexed: 06/17/2023]
Abstract
Effective modification of the structure and properties of halide perovskites via the pressure engineering strategy has attracted enormous interest in the past decade. However, sufficient effort and insights regarding the potential properties and applications of the high-pressure amorphous phase are still lacking. Here, the superior and tunable photoelectric properties that occur in the pressure-induced amorphization process of the halide perovskite Cs3 Bi2 I9 are demonstrated. With increasing pressure, the photocurrent with xenon lamp illumination exhibits a rapid increase and achieves an almost five orders of magnitude increment compared to its initial value. Impressively, a broadband photoresponse from 520 to 1650 nm with an optimal responsivity of 6.81 mA W-1 and fast response times of 95/96 ms at 1650 nm is achieved upon successive compression. The high-gain, fast, broadband, and dramatically enhanced photoresponse properties of Cs3 Bi2 I9 are the result of comprehensive photoconductive and photothermoelectric mechanisms, which are associated with enhanced orbital coupling caused by an increase in BiI interactions in the [BiI6 ]3- cluster, even in the amorphous state. These findings provide new insights for further exploring the potential properties and applications of amorphous perovskites.
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Affiliation(s)
- Zonglun Li
- State Key Laboratory of Superhard MaterialsJilin UniversityChangchun130012P. R. China
| | - Binxia Jia
- Key Laboratory of Applied Surface and Colloid ChemistryNational Ministry of EducationShaanxi Engineering Lab for Advanced Energy TechnologySchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Sixue Fang
- State Key Laboratory of Superhard MaterialsJilin UniversityChangchun130012P. R. China
| | - Quanjun Li
- State Key Laboratory of Superhard MaterialsJilin UniversityChangchun130012P. R. China
| | - Fuyu Tian
- Key Laboratory of Automobile Materials of MOE and School of Materials Science and EngineeringJilin UniversityChangchun130012P. R. China
| | - Haiyan Li
- State Key Laboratory of Superhard MaterialsJilin UniversityChangchun130012P. R. China
| | - Ran Liu
- State Key Laboratory of Superhard MaterialsJilin UniversityChangchun130012P. R. China
| | - Yucheng Liu
- Key Laboratory of Applied Surface and Colloid ChemistryNational Ministry of EducationShaanxi Engineering Lab for Advanced Energy TechnologySchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Lijun Zhang
- Key Laboratory of Automobile Materials of MOE and School of Materials Science and EngineeringJilin UniversityChangchun130012P. R. China
| | - Shengzhong (Frank) Liu
- Key Laboratory of Applied Surface and Colloid ChemistryNational Ministry of EducationShaanxi Engineering Lab for Advanced Energy TechnologySchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Bingbing Liu
- State Key Laboratory of Superhard MaterialsJilin UniversityChangchun130012P. R. China
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10
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Yang J, Li J, Bahrami A, Nasiri N, Lehmann S, Cichocka MO, Mukherjee S, Nielsch K. Wafer-Scale Growth of Sb 2Te 3 Films via Low-Temperature Atomic Layer Deposition for Self-Powered Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:54034-54043. [PMID: 36383043 DOI: 10.1021/acsami.2c16150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
In this work, we demonstrate the performance of a silicon-compatible, high-performance, and self-powered photodetector. A wide detection range from visible (405 nm) to near-infrared (1550 nm) light was enabled by the vertical p-n heterojunction between the p-type antimony telluride (Sb2Te3) thin film and the n-type silicon (Si) substrates. A Sb2Te3 film with a good crystal quality, low density of extended defects, proper stoichiometry, p-type nature, and excellent uniformity across a 4 in. wafer was achieved by atomic layer deposition at 80 °C using (Et3Si)2Te and SbCl3 as precursors. The processed photodetectors have a low dark current (∼20 pA), a high responsivity of (∼4.3 A/W at 405 nm and ∼150 mA/W at 1550 nm), a peak detectivity of ∼1.65 × 1014 Jones, and a quick rise time of ∼98 μs under zero bias voltage. Density functional theory calculations reveal a narrow, near-direct, type-II band gap at the heterointerface that supports a strong built-in electric field leading to efficient separation of the photogenerated carriers. The devices have long-term air stability and efficient switching behavior even at elevated temperatures. These high-performance and self-powered p-Sb2Te3/n-Si heterojunction photodetectors have immense potential to become reliable technological building blocks for a plethora of innovative applications in next-generation optoelectronics, silicon-photonics, chip-level sensing, and detection.
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Affiliation(s)
- Jun Yang
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
- Institute of Materials Science, Technische Universität Dresden, 01062Dresden, Germany
| | - Jianzhu Li
- School of Materials Science and Engineering, Harbin Institute of Technology (Weihai), West Road 2, Weihai, Shandong264209, China
| | - Amin Bahrami
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
| | - Noushin Nasiri
- School of Engineering, Faculty of Science and Engineering, Macquarie University, Sydney, New South Wales2109, Australia
| | - Sebastian Lehmann
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
| | - Magdalena Ola Cichocka
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
| | - Samik Mukherjee
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
| | - Kornelius Nielsch
- Institute for Metallic Materials, Leibniz Institute of Solid State and Materials Science, 01069Dresden, Germany
- Institute of Materials Science, Technische Universität Dresden, 01062Dresden, Germany
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11
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Li Z, Li Q, Li H, Tian F, Du M, Fang S, Liu R, Zhang L, Liu B. Pressure-Tailored Self-Driven and Broadband Photoresponse in PbI 2. SMALL METHODS 2022; 6:e2201044. [PMID: 36351755 DOI: 10.1002/smtd.202201044] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Revised: 10/02/2022] [Indexed: 06/16/2023]
Abstract
Photoelectric devices based on the photothermoelectric (PTE) effect show promising prospects for broadband detection without an external power supply. However, effective strategies are still required to regulate the conversion efficiency of light to heat and electricity. Herein, significantly enhanced photoresponse properties of PbI2 generated from a PTE mechanism via a high-pressure strategy are reported. PbI2 exhibits a stable, fast, self-driven, and broadband photoresponse at ≈980 nm. Intriguingly, the synergy of the photoconductivity and PTE mechanism is conducive to enhancing the photoelectric properties, and extending the detection bandwidth to the optical communication waveband (1650 nm) with an external bias. The dramatically enhanced photoresponse characteristics are attributed to narrowing of the band gap and a significantly decreased resistance, which originate from the enhancement of atomic orbital overlap owing to pressure-induced Pb-I bond contraction. These findings open up a new avenue toward designing self-driven and broadband photoelectric devices.
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Affiliation(s)
- Zonglun Li
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
| | - Quanjun Li
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
| | - Haiyan Li
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
| | - Fuyu Tian
- Key Laboratory of Automobile Materials of MOE and School of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Mingyang Du
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
| | - Sixue Fang
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
| | - Ran Liu
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
| | - Lijun Zhang
- Key Laboratory of Automobile Materials of MOE and School of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Bingbing Liu
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, P. R. China
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12
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Verma D, Liu B, Chen TC, Li LJ, Lai CS. Bi 2O 2Se-based integrated multifunctional optoelectronics. NANOSCALE ADVANCES 2022; 4:3832-3844. [PMID: 36133346 PMCID: PMC9470018 DOI: 10.1039/d2na00245k] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/21/2022] [Accepted: 07/15/2022] [Indexed: 06/16/2023]
Abstract
The prominent light-matter interaction in 2D materials has become a pivotal research area that involves either an archetypal study of inherent mechanisms to explore such interactions or specific applications to assess the efficacy of such novel phenomena. With scientifically controlled light-matter interactions, various applications have been developed. Here, we report four diverse applications on a single structure utilizing the efficient photoresponse of Bi2O2Se with precisely tuned multiple optical wavelengths. First, the Bi2O2Se-based device performs the function of optoelectronic memory using UV (λ = 365 nm, 1.1 mW cm-2) for the write-in process with SiO2 as the charge trapping medium followed by a +1 V bias for read-out. Second, associative learning is mimicked with wavelengths of 525 nm and 635 nm. Third, using similar optical inputs, functions of logic gates "AND", "OR", "NAND", and "NOR" are realized with response current and resistance as outputs. Fourth is the demonstration of a 4 bit binary to the decimal converter using wavelengths of 740 nm (LSB), 595 nm, 490 nm, and 385 nm (MSB) as binary inputs and output response current regarded as equivalent decimal output. Our demonstration is a paradigm for Bi2O2Se-based devices to be an integral part of future advanced multifunctional electronic systems.
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Affiliation(s)
- Dharmendra Verma
- Department of Electronic Engineering, Chang-Gung University Taoyuan 33302 Taiwan +886-3-2118800 ext. 5786
| | - Bo Liu
- Faculty of Information Technology, College of Microelectronics, Beijing University of Technology Beijing 100124 People's Republic of China
| | - Tsung-Cheng Chen
- Department of Electronic Engineering, Chang-Gung University Taoyuan 33302 Taiwan +886-3-2118800 ext. 5786
| | - Lain-Jong Li
- Department of Mechanical Engineering, University of Hong Kong Pokfulam Road 999077 Hong Kong
| | - Chao-Sung Lai
- Department of Electronic Engineering, Chang-Gung University Taoyuan 33302 Taiwan +886-3-2118800 ext. 5786
- Department of Nephrology, Chang Gung Memorial Hospital Linkou 33302 Taiwan
- Department of Materials Engineering, Ming-Chi University of Technology New Taipei City 24301 Taiwan
- Artificial Intelligence Research Center, Chang Gung University Taoyuan 33302 Taiwan
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13
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Liu Y, Liu Y, Wu Y, Zhao S, Guo F, Li S, Yu W, Liu G, Hao J, Wang Z, Yan K, Hao L. Si/SnSe-Nanorod Heterojunction with Ultrafast Infrared Detection Enabled by Manipulating Photo-Induced Thermoelectric Behavior. ACS APPLIED MATERIALS & INTERFACES 2022; 14:24557-24564. [PMID: 35584303 DOI: 10.1021/acsami.2c02557] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Photothermal detectors have attracted tremendous research interest in uncooled infrared imaging technology but with a relatively slow response. Here, Si/SnSe-nanorod (Si/SnSe-NR) heterojunctions are fabricated as a photothermal detector to realize high-performance infrared response beyond the bandgap limitation. Vertically standing SnSe-NR arrays are deposited on Si by a sputtering method. Through manipulating the photoinduced thermoelectric (PTE) behavior along the c-axis, the Si/SnSe-NRs heterojunction exhibits a unique four-stage photoresponse with a high photoresponsivity of 106.3 V W-1 and high optical detectivity of 1.9 × 1010 cm Hz1/2 W-1 under 1342 nm illumination. Importantly, an ultrafast infrared photothermal response is achieved with the rise/fall time of 11.3/258.7 μs. Moreover, the coupling effect between the PTE behavior and external thermal excitation enables an improved response by 288.4%. The work not only offers a new strategy to develop high-speed photothermal detectors but also performs a deep understanding of the PTE behavior in a heterojunction system.
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Affiliation(s)
- Yingming Liu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Yunjie Liu
- College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610065, P. R. China
| | - Yupeng Wu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Shirong Zhao
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Fuhai Guo
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Siqi Li
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Weizhuo Yu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Guanchu Liu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Jingyi Hao
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610065, P. R. China
| | - Keyou Yan
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510006, P. R. China
| | - Lanzhong Hao
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
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14
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Zhen WL, Miao WT, Zhu WL, Zhang CJ, Zhu WK. Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta 2Ni 3Se 8. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:255303. [PMID: 35366657 DOI: 10.1088/1361-648x/ac638b] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/22/2022] [Accepted: 04/01/2022] [Indexed: 06/14/2023]
Abstract
In this paper, we report the synthesis of high-quality Ta2Ni3Se8crystals free of noble or toxic elements and the fabrication and testing of photodetectors on the wire samples. A broadband photoresponse from 405 nm to 1550 nm is observed, along with performance parameters including relatively high photoresponsivity (10 mA W-1) and specific detectivity (3.5 × 107Jones) and comparably short response time (τrise= 433 ms,τdecay= 372 ms) for 1064 nm, 0.5 V bias and 1.352 mW mm-2. Through extensive measurement and analysis, it is determined that the dominant mechanism for photocurrent generation is the photo-bolometric effect, which is believed to be responsible for the very broad spectral detection capability. More importantly, the pronounced response to 1310 nm and 1550 nm wavelengths manifests its promising applications in optical communications. Considering the quasi-one-dimensional structure with layered texture, the potential to build nanodevices on Ta2Ni3Se8makes it even more important in future electronic and optoelectronic applications.
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Affiliation(s)
- W L Zhen
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
- University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - W T Miao
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - W L Zhu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
| | - C J Zhang
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - W K Zhu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
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15
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Yang S, Luo P, Wang F, Liu T, Zhao Y, Ma Y, Li H, Zhai T. Van der Waals Epitaxy of Bi 2 Te 2 Se/Bi 2 O 2 Se Vertical Heterojunction for High Performance Photodetector. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105211. [PMID: 34850539 DOI: 10.1002/smll.202105211] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2021] [Revised: 10/18/2021] [Indexed: 06/13/2023]
Abstract
Bismuth oxyselenide (Bi2 O2 Se) has emerged as a promising candidate for electronic and optoelectronic applications due to its outstanding electron mobility and ambient stability. However, high dark current and relatively slow photoresponse that originate from high charge carrier concentration as well as bolometric effect in Bi2 O2 Se inhibit further improvement of Bi2 O2 Se based photodetectors. Here, a one-step van der Waals (vdW) epitaxy synthesis of Bi2 Te2 Se/Bi2 O2 Se vertical heterojunction with type-II band alignment and high-quality interface is demonstrated. The crystal quality and uniformity of the heterojunction are supported by Raman, transmission electron microscopy and energy dispersive spectroscopy results. A photodetector based on Bi2 Te2 Se/Bi2 O2 Se heterojunction demonstrates steady photoresponse over a large wavelength range (532-1456 nm), with a high specific responsivity of 2.21 × 103 A W-1 at 532 nm and fast response speed of 50 ms. Moreover, field effect regulation allows for further improvement of the photoresponse performance of the heterojunction field effect transistor device, where the responsivity can be increased to 3.34 × 103 A W-1 with a 60 V gate voltage. Overall, the one-step vdW epitaxy process is a promising and convenient route towards constructing high quality Bi2 O2 Se based heterojunction for improving its photodetection performance.
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Affiliation(s)
- Sijie Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Peng Luo
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Fakun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Teng Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yinghe Zhao
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Ying Ma
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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16
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Zhang Y, Wang X, Zhou Y, Lai H, Liu P, Chen H, Wang X, Xie W. Highly Sensitive and Ultra-Broadband VO 2(B) Photodetector Dominated by Bolometric Effect. NANO LETTERS 2022; 22:485-493. [PMID: 34967644 DOI: 10.1021/acs.nanolett.1c04393] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
In this study, Wadsley B phase vanadium oxide (VO2(B)) with broad-band photoabsorption ability, a large temperature coefficient of resistance (TCR), and low noise was developed for uncooled broad-band detection. By using a freestanding structure and reducing the size of active area, the VO2(B) photodetector shows stable and excellent performances in the visible to the terahertz region (405 nm to 0.88 mm), with a peak TCR of -4.77% K-1 at 40 °C, a peak specific detectivity of 6.02 × 109 Jones, and a photoresponse time of 83 ms. A terahertz imaging ability with 30 × 30 pixels was demonstrated. Scanning photocurrent imaging and real-time temperature-photocurrent measurements confirm that a photothermal-type bolometric effect is the dominating mechanism. The study shows the potential of VO2(B) in applications as a new type of uncooled broad-band photodetection material and the potential to further raise the performance of broad-band photodetectors by structural design.
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Affiliation(s)
- Yujing Zhang
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Ximiao Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, Guangdong 510275, People's Republic of China
| | - Yang Zhou
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Haojie Lai
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Pengyi Liu
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Huanjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, Guangdong 510275, People's Republic of China
| | - Xiaomu Wang
- School of Electronic Science and Technology, Nanjing University, Nanjing, Jiangsu 210093, People's Republic of China
| | - Weiguang Xie
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
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17
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Wu J, Wei M, Mu J, Ma H, Zhong C, Ye Y, Sun C, Tang B, Wang L, Li J, Xu X, Liu B, Li L, Lin H. High-Performance Waveguide-Integrated Bi 2O 2Se Photodetector for Si Photonic Integrated Circuits. ACS NANO 2021; 15:15982-15991. [PMID: 34652907 DOI: 10.1021/acsnano.1c04359] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Due to the excellent electrical and optical properties and their integration capability without lattice matching requirements, low-dimensional materials have received increasing attention in silicon photonic circuits. Bi2O2Se with high carrier mobility, narrow bandgap, and good air stability is very promising for high-performance near-infrared photodetectors. Here, the chemical vapor deposition method is applied to grow Bi2O2Se onto mica, and our developed polycarbonate/polydimethylsiloxane-assisted transfer method enables the clean and intact transfer of Bi2O2Se on top of a silicon waveguide. We demonstrated the Bi2O2Se/Si waveguide integrated photodetector with a small dark current of 72.9 nA, high responsivity of 3.5 A·W-1, fast rise/decay times of 22/78 ns, and low noise-equivalent power of 15.1 pW·Hz-0.5 at an applied voltage of 2 V in the O-band for transverse electric modes. Additionally, a microring resonator is designed for enhancing light-matter interaction, resulting in a wavelength-sensitive photodetector with reduced dark current (15.3 nA at 2 V) and more than a 3-fold enhancement in responsivity at the resonance wavelength, which is suitable for spectrally resolved applications. These results promote the integration of Bi2O2Se with a silicon photonic platform and are expected to accelerate the future use of integrated photodetectors in spectroscopy, sensing, and communication applications.
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Affiliation(s)
- Jianghong Wu
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, 18 Shilongshan Road, Hangzhou 310024, China
| | - Maoliang Wei
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Jianglong Mu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, China
| | - Hui Ma
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Chuyu Zhong
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Yuting Ye
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, 18 Shilongshan Road, Hangzhou 310024, China
| | - Chunlei Sun
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, 18 Shilongshan Road, Hangzhou 310024, China
| | - Bo Tang
- Institute of Microelectronics, Chinese Academic Society, Beijing 100029, China
| | - Lichun Wang
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Junying Li
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Xiaomin Xu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, China
| | - Lan Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, 18 Shilongshan Road, Hangzhou 310024, China
| | - Hongtao Lin
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
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18
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Yang X, Zhang Q, Song Y, Fan Y, He Y, Zhu Z, Bai Z, Luo Q, Wang G, Peng G, Zhu M, Qin S, Novoselov K. High Mobility Two-Dimensional Bismuth Oxyselenide Single Crystals with Large Grain Size Grown by Reverse-Flow Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2021; 13:49153-49162. [PMID: 34632760 DOI: 10.1021/acsami.1c13491] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
2D semiconductors with atomically thin body thickness have attracted tremendous research interest for high-performance nanoelectronics and optoelectronics. Most of the 2D semiconductors grown by chemical vapor deposition (CVD) methods suffer from rather low carrier mobility, small single-crystal size, and instability under ambient conditions. Here, we develop an improved CVD method with controllable reverse-gas flow to realize the direct growth of quality Bi2O2Se 2D single crystals on a mica substrate. The applied reverse flow significantly suppresses the random nucleation and thus promotes the lateral size of 2D Bi2O2Se crystals up to ∼750 μm. The Bi2O2Se field-effect transistors display high-room-temperature electron mobility up to ∼1400 cm2·V-1·s-1 and a well-defined drain current saturation. The on/off ratio of the Bi2O2Se transistor is larger than 107, and the sub-threshold swing is about 90 mV·dec-1. The responsivity, response time, and detectivity of Bi2O2Se photodetectors approach up to 60 A·W-1, 5 ms, and 2.4 × 1010 Jones at room temperature, respectively. Our results demonstrate large-size and high-quality Bi2O2Se grown by reverse-flow CVD as a high-performance channel material for next-generation transistors and photodetectors.
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Affiliation(s)
- Xi Yang
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Qi Zhang
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Yingchao Song
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Yansong Fan
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Yuwen He
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Zhihong Zhu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Zongqi Bai
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Qing Luo
- College of Liberal Arts and Sciences & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Guang Wang
- College of Liberal Arts and Sciences & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Gang Peng
- College of Liberal Arts and Sciences & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Mengjian Zhu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Shiqiao Qin
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Kostya Novoselov
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
- Chongqing 2D Materials Institute, Liangjiang New Area, Chongqing 400714, China
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19
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Hossain MT, Das M, Ghosh J, Ghosh S, Giri PK. Understanding the interfacial charge transfer in the CVD grown Bi 2O 2Se/CsPbBr 3 nanocrystal heterostructure and its exploitation in superior photodetection: experiment vs. theory. NANOSCALE 2021; 13:14945-14959. [PMID: 34533165 DOI: 10.1039/d1nr04470b] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Efficient charge transfer in a 2D semiconductor heterostructure plays a crucial role in high-performance photodetectors and energy harvesting devices. Non-van der Waals 2D Bi2O2Se has enormous potential for high-performance optoelectronics, though very little is known about the interfacial charge transport at the corresponding 2D heterojunction. Herein, we report a combined experimental and theoretical investigation of interfacial charge transfer in the Bi2O2Se/CsPbBr3 heterostructure through various microscopic and spectroscopic tools corroborated with density functional theory calculations. The CVD-grown few-layer Bi2O2Se nanosheet possesses high crystallinity and a high absorption coefficient in the visible-near IR region. We integrated the few-layer Bi2O2Se nanosheet possessing superior electron mobility and CsPbBr3 nanocrystals with high light-harvesting capability for efficient broadband photodetection. The band alignment reveals a type-I heterojunction, and the device under reverse bias reveals a fast response time of 12 μs/24 μs (rise time/fall time) and an improved responsivity in the 390 to 840 nm range due to the effective interfacial charge transfer and efficient interlayer coupling at the Bi2O2Se/CsPbBr3 interface. Notably, a photodetector with a better light on/off ratio and a peak responsivity of ∼103 A W-1 was achieved in the Bi2O2Se/CsPbBr3 heterostructure due to the synergistic effects in the heterostructure under ambient conditions. The DFT analysis of the density of states and charge density plots in the heterostructure revealed a net transfer of electrons/holes from perovskite nanocrystals to Bi2O2Se layers and additional density of states in Bi2O2Se. These results are significant for the development of non-van der Waals heterostructure based high-performance low-powered photodetectors.
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Affiliation(s)
- Md Tarik Hossain
- Department of Physics, Indian Institute of Technology Guwahati, Guwahati - 781039, India.
| | - Mandira Das
- Department of Physics, Indian Institute of Technology Guwahati, Guwahati - 781039, India.
| | - Joydip Ghosh
- Department of Physics, Indian Institute of Technology Guwahati, Guwahati - 781039, India.
| | - Subhradip Ghosh
- Department of Physics, Indian Institute of Technology Guwahati, Guwahati - 781039, India.
| | - P K Giri
- Department of Physics, Indian Institute of Technology Guwahati, Guwahati - 781039, India.
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati - 781039, India
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20
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Xu J, Luo X, Hu S, Zhang X, Mei D, Liu F, Han N, Liu D, Gan X, Cheng Y, Huang W. Tunable Linearity of High-Performance Vertical Dual-Gate vdW Phototransistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008080. [PMID: 33694214 DOI: 10.1002/adma.202008080] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2020] [Revised: 02/02/2021] [Indexed: 06/12/2023]
Abstract
Layered 2D semiconductors have been widely exploited in photodetectors due to their excellent electronic and optoelectronic properties. To improve their performance, photogating, photoconductive, photovoltaic, photothermoelectric, and other effects have been used in phototransistors and photodiodes made with 2D semiconductors or hybrid structures. However, it is difficult to achieve the desired high responsivity and linear photoresponse simultaneously in a monopolar conduction channel or a p-n junction. Here, dual-channel conduction with ambipolar multilayer WSe2 is presented by employing the device concept of dual-gate phototransistor, where p-type and n-type channels are produced in the same semiconductor using opposite dual-gating. It is possible to tune the photoconductive gain using a vertical electric field, so that the gain is constant with respect to the light intensity-a linear photoresponse, with a high responsivity of ≈2.5 × 104 A W-1 . Additionally, the 1/f noise of the device is kept at a low level under the opposite dual-gating due to the reduction of current and carrier fluctuation, resulting in a high detectivity of ≈2 × 1013 Jones in the linear photoresponse regime. The linear photoresponse and high performance of the dual-gate WSe2 phototransistor offer the possibility of achieving high-resolution and quantitative light detection with layered 2D semiconductors.
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Affiliation(s)
- Jinpeng Xu
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Xiaoguang Luo
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Siqi Hu
- MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China
| | - Xi Zhang
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Dong Mei
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Fan Liu
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Nannan Han
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Dan Liu
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
| | - Xuetao Gan
- MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China
| | - Yingchun Cheng
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing, 211816, China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics (FSCFE), Shaanxi Institute of Flexible Electronics (SIFE) & Shaanxi Institute of Biomedical Materials and Engineering (SIBME), Northwestern Polytechnical University, Xi'an, 710129, China
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing, 211816, China
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21
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Liu H, Liu Y, Dong S, Xu H, Wu Y, Hao L, Cao B, Li M, Wang Z, Han Z, Yan K. Photothermoelectric SnTe Photodetector with Broad Spectral Response and High On/Off Ratio. ACS APPLIED MATERIALS & INTERFACES 2020; 12:49830-49839. [PMID: 33095577 DOI: 10.1021/acsami.0c15639] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
A broadband photodetector with high performance is highly desirable for the optoelectric and sensing application. Herein, we report a "photo-thermo-electric" (PTE) detector based on an ultrathin SnTe film. The (001)-oriented SnTe films with the wafer size scale are epitaxially grown on the surface of sodium chloride crystals by a scalable sputtering method. Due to the giant PTE effect under laser spot excitation on the asymmetric position between two terminals, a built-in electrical field is produced to drive bulk carriers for a self-powered photodetector, leading to a broad spectral response in the wavelength range from 404 nm to 10.6 μm far beyond the limitation of the energy band gap. Significantly, the photodetector displays a high on/off photoswitching ratio of over 105 with a suppressed dark current, which is 4-5 orders of magnitude higher than that of other reported SnTe-based detectors. Under zero external bias, the device yields the highest detectivity of ∼1.3 × 1010 cm Hz1/2 W-1 with a corresponding responsivity of ∼3.9 mA W-1 and short rising/falling times of ∼78/84 ms. Furthermore, the photodetector transferred onto the flexible template exhibits excellent mechanical flexibility over 300 bending cycles. These findings offer feasible strategies toward designing and developing low-power-consumption wearable optoelectronics with competitive performance.
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Affiliation(s)
- Hui Liu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, People's Republic of China
| | - Yunjie Liu
- College of Science, China University of Petroleum, Qingdao, Shandong 266580, People's Republic of China
| | - Shichang Dong
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, People's Republic of China
| | - Hanyang Xu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, People's Republic of China
| | - Yupeng Wu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, People's Republic of China
| | - Lanzhong Hao
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, People's Republic of China
| | - Banglin Cao
- College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610065, People's Republic of China
| | - Mingjie Li
- School of Environment and Energy, State Key 426 Laboratory of Luminescent Materials and Devices, South China University of Technology, 429 Guangzhou, Guangdong 510006, People's Republic of China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610065, People's Republic of China
| | - Zhide Han
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, People's Republic of China
| | - Keyou Yan
- School of Environment and Energy, State Key 426 Laboratory of Luminescent Materials and Devices, South China University of Technology, 429 Guangzhou, Guangdong 510006, People's Republic of China
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22
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Chitara B, Limbu TB, Orlando JD, Tang Y, Yan F. Ultrathin Bi 2O 2S nanosheet near-infrared photodetectors. NANOSCALE 2020; 12:16285-16291. [PMID: 32720665 DOI: 10.1039/d0nr02991b] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recently, a zipper two-dimensional (2D) material Bi2O2Se belonging to the layered bismuth oxychalcogenide (Bi2O2X: X = S, Se, Te) family, has emerged as an alternate candidate to van der Waals 2D materials for high-performance electronic and optoelectronic applications. This hints towards exploring the other members of the Bi2O2X family for their true potential and bismuth oxysulfide (Bi2O2S) could be the next member for such applications. Here, we demonstrate for the first time, the scalable room-temperature chemical synthesis and near-infrared (NIR) photodetection of ultrathin Bi2O2S nanosheets. The thickness of the freestanding nanosheets was around 2-3 nm with a lateral dimension of ∼80-100 nm. A solution-processed NIR photodetector was fabricated from ultrathin Bi2O2S nanosheets. The photodetector showed high performance, under 785 nm laser illumination, with a photoresponsivity of 4 A W-1, an external quantum efficiency of 630%, and a normalized photocurrent-to-dark-current ratio of 1.3 × 1010 per watt with a fast response time of 100 ms. Taken together, the findings suggest that Bi2O2S nanosheets could be a promising alternative 2D material for next-generation large-area flexible electronic and optoelectronic devices.
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Affiliation(s)
- Basant Chitara
- Department of Chemistry and Biochemistry, North Carolina Central University, Durham, NC 27707, USA.
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23
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Li Y, Zhang Y, Li T, Li M, Chen Z, Li Q, Zhao H, Sheng Q, Shi W, Yao J. Ultrabroadband, Ultraviolet to Terahertz, and High Sensitivity CH 3NH 3PbI 3 Perovskite Photodetectors. NANO LETTERS 2020; 20:5646-5654. [PMID: 32609527 DOI: 10.1021/acs.nanolett.0c00082] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Owning to the unique optical and electronic properties, organic-inorganic hybrid perovskites have made impressive progress in photodetection applications. However, achieving ultrabroadband detection over the ultraviolet (UV) to terahertz (THz) range remains a major challenge for perovskite photodetectors. Here, we report an ultrabroadband (UV-THz) dual-mechanism photodetector based on CH3NH3PbI3 films. The photoresponse of the PD in the UV-visible (vis) and near-infrared (NIR)-THz bands is mainly caused by the photoconductive (PC) effect and bolometric effect, respectively. High responsivities ranging from 105 to 102 mA W-1 are acquired within UV-THz bands under 1 V bias voltage at room temperature. Moreover, the device also shows fast rise and decay times of 76 and 126 ns under 1064 nm laser illumination, respectively. This work provides insight into the thermoelectric characteristics of perovskite and offers a new way to realize ultrabroadband photodetectors notably for THz detector at room temperature.
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Affiliation(s)
- Yifan Li
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
| | - Yating Zhang
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
| | - Tengteng Li
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
| | - Mengyao Li
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
| | - Zhiliang Chen
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
| | - Qingyan Li
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
| | - Hongliang Zhao
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
| | - Quan Sheng
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
| | - Wei Shi
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
| | - Jianquan Yao
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
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24
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Xu H, Hao L, Liu H, Dong S, Wu Y, Liu Y, Cao B, Wang Z, Ling C, Li S, Xu Z, Xue Q, Yan K. Flexible SnSe Photodetectors with Ultrabroad Spectral Response up to 10.6 μm Enabled by Photobolometric Effect. ACS APPLIED MATERIALS & INTERFACES 2020; 12:35250-35258. [PMID: 32660231 DOI: 10.1021/acsami.0c09561] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
A broad spectral response is highly desirable for radiation detection in modern optoelectronics; however, it still remains a great challenge. Herein, we report a novel ultrabroadband photodetector based on a high-quality tin monoselenide (SnSe) thin film, which is even capable of detecting photons with energies far below its optical band gap. The wafer-size SnSe ultrathin films are epitaxially grown on sodium chloride via the 45° in-plane rotation by employing a sputtering method. The photodetector delivers sensitive detection to ultraviolet-visible-near infrared (UV-Vis-NIR) lights in the photoconductive mode and shows an anomalous response to long-wavelength infrared at room temperature. Under the mid-infrared light of 10.6 μm, the fabricated photodetector exhibits a large photoresponsivity of 0.16 A W-1 with a fast response rate, which is ∼3 orders of magnitude higher than other results. The thermally induced carriers from the photobolometric effect are responsible for the sub-bandgap response. This mechanism is confirmed by a temperature coefficient of resistance of -2.3 to 4.4% K-1 in the film, which is comparable to that of the commercial bolometric detectors. Additionally, the flexible device transferred onto polymer templates further displays high mechanical durability and stability over 200 bending cycles, indicating great potential toward developing wearable optoelectronic devices.
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Affiliation(s)
- Hanyang Xu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Lanzhong Hao
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Hui Liu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Shichang Dong
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Yupeng Wu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Yunjie Liu
- College of Science, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Banglin Cao
- College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610065, P. R. China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu, Sichuan 610065, P. R. China
| | - Cuicui Ling
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Shouxi Li
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Zhijie Xu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Qingzhong Xue
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Keyou Yan
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510006, P. R. China
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25
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Han W, Li C, Yang S, Luo P, Wang F, Feng X, Liu K, Pei K, Li Y, Li H, Li L, Gao Y, Zhai T. Atomically Thin Oxyhalide Solar-Blind Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2000228. [PMID: 32346935 DOI: 10.1002/smll.202000228] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2020] [Revised: 02/23/2020] [Accepted: 04/07/2020] [Indexed: 06/11/2023]
Abstract
2D wide-bandgap semiconductors demonstrate great potential in fabricating solar-blind ultraviolet (SBUV) photodetectors. However, the low responsivity of 2D solar-blind photodetectors still limits their practical applications. Here, high-responsivity solar-blind photodetectors are achieved based on 2D bismuth oxychloride (BiOCl) flakes. The 2D BiOCl photodetectors exhibit a responsivity up to 35.7 A W-1 and a specific detectivity of 2.2 × 1010 Jones under 250 nm illumination with 17.8 µW cm-2 power density. In particular, the enhanced photodetective performances are demonstrated in BiOCl photodetectors with increasing ambient temperature. Surprisingly, their responsivity can reach 2060 A W-1 at 450 K under solar-blind light illumination, maybe owing to the formation of defective BiOCl grains evidenced by in situ transmission electron microscopy. The high responsivity throughout the solar-blind range indicates that 2D BiOCl is a promising candidate for SBUV detection.
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Affiliation(s)
- Wei Han
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Chen Li
- Center for Nanoscale Characterization and Devices, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Sanjun Yang
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Peng Luo
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Fakun Wang
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Xin Feng
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Kailang Liu
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Ke Pei
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Yuan Li
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Luying Li
- Center for Nanoscale Characterization and Devices, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Yihua Gao
- School of Physics, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
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