Electron-Beam-Driven III-Nitride Plasmonic Nanolasers in the Deep-UV and Visible Region

Rational design of a ZnO nanowire laser on a surface plasmon polariton

Plasmonic lasers, which use the strong confinement of surface plasmon polaritons, are key parts to realize ultracompact coherent light sources at deep subwavelength scales. We propose a plasmonic laser composed of a silicon substrate, ZnO nanowire, dielectric layer, metal layer, and electrode. In this structure, the superimposed coupling of the surface plasmon mode at the metal interface with the high refractive index gain nanowire mode makes the electric field in the spacer layer significantly enhanced. The ZnO nanowire is used as gain material to provide gain compensation. The optical and electrical properties are simulated with the geometric parameters and dielectric layer material. The results show that the structure has strong confinement of the optical field and can realize a deep subwavelength constraint at a lower threshold level. It provides theoretical support for realizing ultracompact coherent light sources.

The Sign of Exciton-Photon Coupling in GaN-Based Triangular-like Ridge Cavity

In this paper, the behavior of exciton radiative recombination in a GaN-based triangular-like ridge cavity is studied at room-temperature. The triangular-like ridge cavity is fabricated on a standard-blue-LED epitaxial wafer grown on a sapphire substrate. Through the photoluminescence (PL) and time-resolved photoluminescence (TR-PL) measurements, a clear modulation of the original spontaneous emission is found in the microcavity, a new transition channel is observed, and the effect is angle-dependent. Furthermore, by changing the tilt angle during angle-resolution photoluminescence (AR-PL), it is found that the coupling between excitons and photons in the cavity is the strongest when tilted at 10°. By simulation, the strong localization of photons in the top of the cavity can be confirmed. The PL, TR-PL, and AR-PL results showed the sign of the exciton-photon coupling in the triangular-like ridge cavity.

Surface plasmon coupling regulated CsPbBr3 perovskite lasers in a metal-insulator-semiconductor structure

A strong coupling effect often occurs between a metal and semiconductor, so micro/nano-lasers based on surface plasmons can break through the optical diffraction limit and realize unprecedented linear and nonlinear enhancement of optical processes. Hence, metal–insulator–semiconductor (M–I–S) structures based on perovskite materials were explored to design optoelectronic devices. Herein, we constructed an Ag/SiO₂/CsPbBr₃ hybrid structure to generate surface plasmon coupled emission between the metal and CsPbBr₃ perovskite. Combined with experimental characterization and COMSOL Multiphysics software simulations, the best enhancement for CsPbBr₃ radiative recombination efficiencies can be achieved with a 10 nm-thickness of the SiO₂ layer and 80 nm-thickness of the Ag metal film, further verified by optimizing the thickness of the SiO₂ layer above the Ag metal film. In this state, the laser threshold can be as low as 0.138 μW with a quality (Q) factor of up to 3907 under optical pumping, which demonstrate a significant step toward practical applications in biological technology, chemical identification, and optical interconnections of information transmission.

A strong coupling effect often occurs between a metal and semiconductor, so micro/nano-lasers based on surface plasmons can break through the optical diffraction limit and realize unprecedented linear and nonlinear enhancement of optical processes.

Nanostructured Color Filters: A Review of Recent Developments

Color plays an important role in human life: without it life would be dull and monochromatic. Printing color with distinct characteristics, like hue, brightness and saturation, and high resolution, are the main characteristic of image sensing devices. A flexible design of color filter is also desired for angle insensitivity and independence of direction of polarization of incident light. Furthermore, it is important that the designed filter be compatible with the image sensing devices in terms of technology and size. Therefore, color filter requires special care in its design, operation and integration. In this paper, we present a comprehensive review of nanostructured color filter designs described to date and evaluate them in terms of their performance.