1
|
Wang Z, Yang G, Yin Y, Li K, Guan H, Yu X, Xu B, Yin S, Hao Y. Synergistic Effect of Defects Passivation and Energy Level Alignment Realizing P3HT-Based High-Efficiency CsPbI 3 Perovskite Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402910. [PMID: 39263771 DOI: 10.1002/smll.202402910] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2024] [Revised: 08/16/2024] [Indexed: 09/13/2024]
Abstract
Poly (3-hexylthiophene) (P3HT) is one of the most efficient hole transport layers (HTLs) in perovskite solar cells (PSCs). However, surface and boundary defects in CsPbI3, and energy level mismatch between CsPbI3 and P3HT lead to a low power conversion efficiency (PCE) in P3HT-based CsPbI3 PSCs. Here, a synergistic strategy with anti-solvent (sec-pentyl alcohol, 2-PA) and passivators (LiX, X = F, Cl, Br, I) is developed to promote the photovoltaic performance of P3HT-based CsPbI3 PSCs. It is proved that the 2-PA washes away the residual DMF and DMAPbI3, and assists the secondary growth of CsPbI3 crystal. LiX not only can passivate iodine (I) vacancies, but also can reduce energy offset at CsPbI3/P3HT interface, accelerating hole extraction process. Finally, an impressive efficiency of 19.26% is obtained due to the synergistic effect of defects passivation and energy alignment, which is 34.4% higher than the 14.32% achieved in Control cell. These findings prove that synergistic strategy of defects passivation and energy alignment is an effective way for realizing high-efficiency in P3HT-based CsPbI3 PSCs.
Collapse
Affiliation(s)
- Zhongqiang Wang
- College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan, 030024, China
| | - Gen Yang
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, 030024, China
| | - Yabo Yin
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, 030024, China
| | - Kangning Li
- College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan, 030024, China
| | - Haowei Guan
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, 030024, China
| | - Xueliang Yu
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, 030024, China
| | - Bingshe Xu
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, 030024, China
| | - Shougen Yin
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), School of Materials Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China
| | - Yuying Hao
- College of Electronic Information and Optical Engineering, Taiyuan University of Technology, Taiyuan, 030024, China
| |
Collapse
|
2
|
Guan T, Chen W, Tang H, Li D, Wang X, Weindl CL, Wang Y, Liang Z, Liang S, Xiao T, Tu S, Roth SV, Jiang L, Müller-Buschbaum P. Decoding the Self-Assembly Plasmonic Interface Structure in a PbS Colloidal Quantum Dot Solid for a Photodetector. ACS NANO 2023; 17:23010-23019. [PMID: 37948332 DOI: 10.1021/acsnano.3c08526] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2023]
Abstract
Hybrid plasmonic nanostructures have gained enormous attention in a variety of optoelectronic devices due to their surface plasmon resonance properties. Self-assembled hybrid metal/quantum dot (QD) architectures offer a means of coupling the properties of plasmonics and QDs to photodetectors, thereby modifying their functionality. The arrangement and localization of hybrid nanostructures have an impact on exciton trapping and light harvesting. Here, we present a hybrid structure consisting of self-assembled gold nanospheres (Au NSs) embedded in a solid matrix of PbS QDs for mapping the interface structures and the motion of charge carriers. Grazing-incidence small-angle X-ray scattering is utilized to analyze the localization and spacing of the Au NSs within the hybrid structure. Furthermore, by correlating the morphology of the Au NSs in the hybrid structure with the corresponding differences observed in the performance of photodetectors, we are able to determine the impact of interface charge carrier dynamics in the coupling structure. From the perspective of architecture, our study provides insights into the performance improvement of optoelectronic devices.
Collapse
Affiliation(s)
- Tianfu Guan
- Technical University of Munich, TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, James-Franck-Str. 1, 85748 Garching, Germany
| | - Wei Chen
- Technical University of Munich, TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, James-Franck-Str. 1, 85748 Garching, Germany
- Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Advanced Material Diagnostic Technology, and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, People's Republic of China
| | - Haodong Tang
- College of Integrated Circuit and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, People's Republic of China
| | - Dong Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, People's Republic of China
| | - Xiao Wang
- Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Advanced Material Diagnostic Technology, and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, People's Republic of China
| | - Christian L Weindl
- Technical University of Munich, TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, James-Franck-Str. 1, 85748 Garching, Germany
| | - Yawen Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, People's Republic of China
| | - Zhiqiang Liang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, People's Republic of China
| | - Suzhe Liang
- Technical University of Munich, TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, James-Franck-Str. 1, 85748 Garching, Germany
| | - Tianxiao Xiao
- Technical University of Munich, TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, James-Franck-Str. 1, 85748 Garching, Germany
| | - Suo Tu
- Technical University of Munich, TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, James-Franck-Str. 1, 85748 Garching, Germany
| | - Stephan V Roth
- Deutsches Elektronen-Synchrotron (DESY), Notkestr. 85, 22607 Hamburg, Germany
- KTH Royal Institute of Technology, Department of Fibre and Polymer Technology, Teknikringen 56-58, SE-100 44 Stockholm, Sweden
| | - Lin Jiang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, People's Republic of China
| | - Peter Müller-Buschbaum
- Technical University of Munich, TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, James-Franck-Str. 1, 85748 Garching, Germany
- Heinz Maier-Leibniz Zentrum (MLZ), Technical University of Munich, Lichtenbergstraße 1, 85748 Garching, Germany
| |
Collapse
|
3
|
Scarabelli L, Sun M, Zhuo X, Yoo S, Millstone JE, Jones MR, Liz-Marzán LM. Plate-Like Colloidal Metal Nanoparticles. Chem Rev 2023; 123:3493-3542. [PMID: 36948214 PMCID: PMC10103137 DOI: 10.1021/acs.chemrev.3c00033] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/24/2023]
Abstract
The pseudo-two-dimensional (2D) morphology of plate-like metal nanoparticles makes them one of the most anisotropic, mechanistically understood, and tunable structures available. Although well-known for their superior plasmonic properties, recent progress in the 2D growth of various other materials has led to an increasingly diverse family of plate-like metal nanoparticles, giving rise to numerous appealing properties and applications. In this review, we summarize recent progress on the solution-phase growth of colloidal plate-like metal nanoparticles, including plasmonic and other metals, with an emphasis on mechanistic insights for different synthetic strategies, the crystallographic habits of different metals, and the use of nanoplates as scaffolds for the synthesis of other derivative structures. We additionally highlight representative self-assembly techniques and provide a brief overview on the attractive properties and unique versatility benefiting from the 2D morphology. Finally, we share our opinions on the existing challenges and future perspectives for plate-like metal nanomaterials.
Collapse
Affiliation(s)
- Leonardo Scarabelli
- NANOPTO Group, Institue of Materials Science of Barcelona, Bellaterra, 08193, Spain
| | - Muhua Sun
- National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Xiaolu Zhuo
- Guangdong Provincial Key Lab of Optoelectronic Materials and Chips, School of Science and Engineering, The Chinese University of Hong Kong (Shenzhen), Shenzhen 518172, China
| | - Sungjae Yoo
- Research Institute for Nano Bio Convergence, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Chemistry Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Jill E Millstone
- Department of Chemistry, Department of Chemical and Petroleum Engineering, Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Matthew R Jones
- Department of Chemistry, Rice University, Houston, Texas 77005, United States
- Department of Materials Science & Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - Luis M Liz-Marzán
- CIC biomaGUNE, Basque Research and Technology Alliance (BRTA), 20014 Donostia-San Sebastián, Spain
- Ikerbasque, 43009 Bilbao, Spain
- Networking Research Center on Bioengineering, Biomaterials and Nanomedicine (CIBER-BBN), 20014 Donostia-San Sebastián, Spain
- Cinbio, Universidade de Vigo, 36310 Vigo, Spain
| |
Collapse
|
4
|
Tonkaev P, Sinev IS, Rybin MV, Makarov SV, Kivshar Y. Multifunctional and Transformative Metaphotonics with Emerging Materials. Chem Rev 2022; 122:15414-15449. [PMID: 35549165 DOI: 10.1021/acs.chemrev.1c01029] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
Future technologies underpinning multifunctional physical and chemical systems and compact biological sensors will rely on densely packed transformative and tunable circuitry employing nanophotonics. For many years, plasmonics was considered as the only available platform for subwavelength optics, but the recently emerged field of resonant metaphotonics may provide a versatile practical platform for nanoscale science by employing resonances in high-index dielectric nanoparticles and metasurfaces. Here, we discuss the recently emerged field of metaphotonics and describe its connection to material science and chemistry. For tunabilty, metaphotonics employs a variety of the recently highlighted materials such as polymers, perovskites, transition metal dichalcogenides, and phase change materials. This allows to achieve diverse functionalities of metasystems and metasurfaces for efficient spatial and temporal control of light by employing multipolar resonances and the physics of bound states in the continuum. We anticipate expanding applications of these concepts in nanolasers, tunable metadevices, metachemistry, as well as a design of a new generation of chemical and biological ultracompact sensing devices.
Collapse
Affiliation(s)
- Pavel Tonkaev
- Nonlinear Physics Center, Research School of Physics, Australian National University, Canberra, Australian Capital Territory 2601, Australia.,School of Physics and Engineering, ITMO University, St. Petersburg 197101, Russia
| | - Ivan S Sinev
- School of Physics and Engineering, ITMO University, St. Petersburg 197101, Russia
| | - Mikhail V Rybin
- School of Physics and Engineering, ITMO University, St. Petersburg 197101, Russia.,Ioffe Institute, Russian Academy of Science, St. Petersburg 194021, Russia
| | - Sergey V Makarov
- School of Physics and Engineering, ITMO University, St. Petersburg 197101, Russia
| | - Yuri Kivshar
- Nonlinear Physics Center, Research School of Physics, Australian National University, Canberra, Australian Capital Territory 2601, Australia.,School of Physics and Engineering, ITMO University, St. Petersburg 197101, Russia
| |
Collapse
|
5
|
Ma X, Xu Y, Li S, Lo TW, Zhang B, Rogach AL, Lei D. A Flexible Plasmonic-Membrane-Enhanced Broadband Tin-Based Perovskite Photodetector. NANO LETTERS 2021; 21:9195-9202. [PMID: 34672605 DOI: 10.1021/acs.nanolett.1c03050] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Lead-free perovskite quantum dots (QDs) have been widely investigated for optoelectronic devices because of their excellent electrical and optical properties. However, optoelectronic devices based on such lead-free perovskites still have much lower performance than those made of Pb-based counterparts. Herein, we developed a lead-free photodetector with an enhanced broadband spectral response ranging from 300 to 630 nm. By balancing plasmonic near-field enhancement and surface energy quenching through precisely controlling the thickness of Al2O3 spacer between the CsSnBr3 QDs and silver nanoparticle membrane, the photodetector with 5 nm thick Al2O3 experiences a maximum photocurrent enhancement of 6.5-fold at 410 nm, with a responsivity of 62.3 mA/W and detectivity of 4.27 × 1011 Jones. Moreover, its photocurrent shows a negligible decrease after 100 cycles of bending, which is ascribed to the tension-offset induced by the self-assembled nanoparticle membrane. The proposed plasmonic membrane enhancement provides a great potential for high-performance perovskite optoelectronic devices.
Collapse
Affiliation(s)
- Xue Ma
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R. 999077, People's Republic of China
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, People's Republic of China
| | - Yunkun Xu
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R. 999077, People's Republic of China
| | - Siqi Li
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R. 999077, People's Republic of China
| | - Tsz Wing Lo
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R. 999077, People's Republic of China
| | - Baolin Zhang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, People's Republic of China
| | - Andrey L Rogach
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R. 999077, People's Republic of China
- Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R. 999077, People's Republic of China
| | - Dangyuan Lei
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R. 999077, People's Republic of China
- Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R. 999077, People's Republic of China
| |
Collapse
|
6
|
Li T, Luo S, Wang X, Zhang L. Alternative Lone-Pair ns 2 -Cation-Based Semiconductors beyond Lead Halide Perovskites for Optoelectronic Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008574. [PMID: 34060151 DOI: 10.1002/adma.202008574] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2020] [Revised: 03/22/2021] [Indexed: 06/12/2023]
Abstract
Lead halide perovskites have emerged in the last decade as advantageous high-performance optoelectronic semiconductors, and have undergone rapid development for diverse applications such as solar cells, light-emitting diodes , and photodetectors. While material instability and lead toxicity are still major concerns hindering their commercialization, they offer promising prospects and design principles for developing promising optoelectronic materials. The distinguished optoelectronic properties of lead halide perovskites stem from the Pb2+ cation with a lone-pair 6s2 electronic configuration embedded in a mixed covalent-ionic bonding lattice. Herein, we summarize alternative Pb-free semiconductors containing lone-pair ns2 cations, intending to offer insights for developing potential optoelectronic materials other than lead halide perovskites. We start with the physical underpinning of how the ns2 cations within the material lattice allow for superior optoelectronic properties. We then review the emerging Pb-free semiconductors containing ns2 cations in terms of structural dimensionality, which is crucial for optoelectronic performance. For each category of materials, the research progresses on crystal structures, electronic/optical properties, device applications, and recent efforts for performance enhancements are overviewed. Finally, the issues hindering the further developments of studied materials are surveyed along with possible strategies to overcome them, which also provides an outlook on the future research in this field.
Collapse
Affiliation(s)
- Tianshu Li
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, 130012, China
| | - Shulin Luo
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, 130012, China
| | - Xinjiang Wang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, 130012, China
| | - Lijun Zhang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun, 130012, China
| |
Collapse
|
7
|
Wang F, Zou X, Xu M, Wang H, Wang H, Guo H, Guo J, Wang P, Peng M, Wang Z, Wang Y, Miao J, Chen F, Wang J, Chen X, Pan A, Shan C, Liao L, Hu W. Recent Progress on Electrical and Optical Manipulations of Perovskite Photodetectors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2100569. [PMID: 34032025 PMCID: PMC8292906 DOI: 10.1002/advs.202100569] [Citation(s) in RCA: 49] [Impact Index Per Article: 16.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2021] [Revised: 03/18/2021] [Indexed: 06/01/2023]
Abstract
Photodetectors built from conventional bulk materials such as silicon, III-V or II-VI compound semiconductors are one of the most ubiquitous types of technology in use today. The past decade has witnessed a dramatic increase in interest in emerging photodetectors based on perovskite materials driven by the growing demands for uncooled, low-cost, lightweight, and even flexible photodetection technology. Though perovskite has good electrical and optical properties, perovskite-based photodetectors always suffer from nonideal quantum efficiency and high-power consumption. Joint manipulation of electrons and photons in perovskite photodetectors is a promising strategy to improve detection efficiency. In this review, electrical and optical characteristics of typical types of perovskite photodetectors are first summarized. Electrical manipulations of electrons in perovskite photodetectors are discussed. Then, artificial photonic nanostructures for photon manipulations are detailed to improve light absorption efficiency. By reviewing the manipulation of electrons and photons in perovskite photodetectors, this review aims to provide strategies to achieve high-performance photodetectors.
Collapse
Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Xuming Zou
- Key Laboratory for Micro‐Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and DevicesSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Mengjian Xu
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
- Terahertz Technology Innovation Research InstituteTerahertz Spectrum and Imaging Technology Cooperative Innovation CenterShanghai Key Lab of Modern Optical SystemUniversity of Shanghai for Science and TechnologyShanghai200093China
| | - Hao Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Hailu Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Huijun Guo
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Peng Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Meng Peng
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Zhen Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
| | - Yang Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
| | - Jinshui Miao
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
- Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou310024China
| | - Fansheng Chen
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
| | - Jianlu Wang
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
| | - Anlian Pan
- Key Laboratory for Micro‐Nano Physics and Technology of Hunan ProvinceCollege of Materials Science and EngineeringHunan UniversityChangsha410082China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesSchool of Physics and EngineeringZhengzhou UniversityZhengzhou45000China
| | - Lei Liao
- Key Laboratory for Micro‐Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and DevicesSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Weida Hu
- State Key Laboratory of Infrared PhysicsKey Laboratory of Intelligent Infrared PerceptionShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China
- University of Chinese Academy of SciencesChinese Academy of SciencesBeijing100049China
- Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou310024China
| |
Collapse
|
8
|
Ma J, Xia X, Yan S, Li Y, Liang W, Yan J, Chen X, Wu D, Li X, Shi Z. Stable and Self-Powered Solar-Blind Ultraviolet Photodetectors Based on a Cs 3Cu 2I 5/β-Ga 2O 3 Heterojunction Prepared by Dual-Source Vapor Codeposition. ACS APPLIED MATERIALS & INTERFACES 2021; 13:15409-15419. [PMID: 33779137 DOI: 10.1021/acsami.1c00387] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Self-powered solar-blind ultraviolet (UV) photodetectors have drawn worldwide attention in recent years because of their important applications in military and civilian areas. In this study, a dual-source vapor codeposition technique was employed, for the first time, to prepare a nontoxic copper halide Cs3Cu2I5, which was integrated with the β-Ga2O3 wafer to construct a type-II heterojunction for photodetection applications. By optimizing the annealing conditions, high-quality Cs3Cu2I5 films with dense morphology, high crystallinity, and a long carrier lifetime of 1.02 μs were acquired. Because of the high material integrity of Cs3Cu2I5 films and effective interfacial carrier transfer from Cs3Cu2I5 to β-Ga2O3, a heterojunction device demonstrates a good solar-blind UV response property and operates at zero bias. Typically, the photodetector presents a low dark current (∼1.2 pA), a high solar-blind/UVA rejection ratio (∼1.0 × 103), a relatively fast photoresponse speed (37/45 ms), and a high photo-to-dark current ratio (∼5.1 × 104) at zero bias. Moreover, even after 12-h continuous working and 2-month storage without encapsulation in ambient air, the photodetection ability of the device can almost be maintained, demonstrating outstanding air stability. Our results suggest that nontoxic Cs3Cu2I5 is able to serve as a prospective candidate for stable solar-blind UV photodetection.
Collapse
Affiliation(s)
- Jingli Ma
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, 75 Daxue Road, Zhengzhou 450052, China
| | - Xiaochuan Xia
- School of Microelectronics, Dalian University of Technology, Dalian 116023, China
| | - Su Yan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, 75 Daxue Road, Zhengzhou 450052, China
| | - Ying Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, 75 Daxue Road, Zhengzhou 450052, China
| | - Wenqing Liang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, 75 Daxue Road, Zhengzhou 450052, China
| | - Jingjing Yan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, 75 Daxue Road, Zhengzhou 450052, China
| | - Xu Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, 75 Daxue Road, Zhengzhou 450052, China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, 75 Daxue Road, Zhengzhou 450052, China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, 75 Daxue Road, Zhengzhou 450052, China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, 75 Daxue Road, Zhengzhou 450052, China
| |
Collapse
|
9
|
Chamoli SK, Verma G, Singh SC, Guo C. Phase change material based hot electron photodetection. NANOSCALE 2021; 13:1311-1317. [PMID: 33410442 DOI: 10.1039/d0nr06456d] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We introduce a phase change material (PCM) based metal-dielectric-metal (MDM) cavity of gold (Au)-antimony trisulfide (Sb2S3)-Au as a hot electron photodetector (HEPD). Sb2S3 shows significant contrast in the bandgap (Eg) upon phase transition from the crystalline (Cry) (Eg = 2.01 eV) to the amorphous (Amp) (Eg = 1.72 eV) phase and forms the lowest Schottky barrier with Au in its Amp phase compared to conventional semiconductors such as Si, MoS2, and TiO2. The proposed HEPD is tunable for absorption and responsivity in the spectral range of 720 nm < λ < 1250 nm for the Cry phase and 604 nm < λ < 3542 nm for the Amp phase. The single resonance cavity and thus the sensitivity of the designed HEPD device can be changed to the double resonance cavity via the Cry to Amp phase transition. The maximum predicted responsivities for the single and double cavities are 20 and 24 mA W-1, respectively, at 950 nm and 1050 nm wavelengths which is the highest among all previously proposed planar HEPD devices. An anti-symmetric resonance mode at a higher wavelength is observed in the double cavity with 100% absorption. Owing to a high index of Sb2S3, an ultrathin ∼40 nm (∼λ/15) MDM cavity supports a critical light coupling to achieve high-efficiency HEPDs. Furthermore, a reversible and ultrafast (∼70 ns) Cry to Amp phase transition of Sb2S3 makes it suitable for many tunable photonics applications ranging from the visible to near-infrared region. Finally, we have introduced a novel scheme to switch between the single and double cavity by exploiting a semiconductor to metal phase transition in a PCM called VO2. The integration of VO2 as a coupling medium in the double cavity has increased the responsivity up to 50% upon phase transition to the metal phase. The proposed design can be used in optical filters, optical switches, ultrathin broad or narrow band solar absorbers, and other energy applications such as water splitting.
Collapse
Affiliation(s)
- Sandeep Kumar Chamoli
- The Guo Photonics Laboratory, State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China. and University of Chinese Academy of Science, Beijing 100039, China. and The Institute of Optics, University of Rochester, Rochester, New York 14627, USA.
| | - Gopal Verma
- The Guo Photonics Laboratory, State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
| | - Subhash C Singh
- The Guo Photonics Laboratory, State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China. and The Institute of Optics, University of Rochester, Rochester, New York 14627, USA.
| | - Chunlei Guo
- The Institute of Optics, University of Rochester, Rochester, New York 14627, USA.
| |
Collapse
|
10
|
Chen C, Zheng S, Song H. Photon management to reduce energy loss in perovskite solar cells. Chem Soc Rev 2021; 50:7250-7329. [PMID: 33977928 DOI: 10.1039/d0cs01488e] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
Despite the rapid development of perovskite solar cells (PSCs) over the past few years, the conversion of solar energy into electricity is not efficient enough or cost-competitive yet. The principal energy loss in the conversion of solar energy to electricity fundamentally originates from the non-absorption of low-energy photons ascribed to Shockley-Queisser limits and thermalization losses of high-energy photons. Enhancing the light-harvesting efficiency of the perovskite photoactive layer by developing efficient photo management strategies with functional materials and arrays remains a long-standing challenge. Here, we briefly review the historical research trials and future research trends to overcome the fundamental loss mechanisms in PSCs, including upconversion, downconversion, scattering, tandem/graded structures, texturing, anti-reflection, and luminescent solar concentrators. We will deeply emphasize the availability and analyze the importance of a fine device structure, fluorescence efficiency, material proportion, and integration position for performance improvement. The unique energy level structure arising from the 4fn inner shell configuration of the trivalent rare-earth ions gives multifarious options for efficient light-harvesting by upconversion and downconversion. Tandem or graded PSCs by combining a series of subcells with varying bandgaps seek to rectify the spectral mismatch. Plasmonic nanostructures function as a secondary light source to augment the light-trapping within the perovskite layer and carrier transporting layer, enabling enhanced carrier generation. Texturing the interior using controllable micro/nanoarrays can realize light-matter interactions. Anti-reflective coatings on the top glass cover of the PSCs bring about better transmission and glare reduction. Photon concentration through perovskite-based luminescent solar concentrators offers a path to increase efficiency at reduced cost and plays a role in building-integrated photovoltaics. Distinct from other published reviews, we here systematically and hierarchically present all of the photon management strategies in PSCs by presenting the theoretical possibilities and summarizing the experimental results, expecting to inspire future research in the field of photovoltaics, phototransistors, photoelectrochemical sensors, photocatalysis, and especially light-emitting diodes. We further assess the overall possibilities of the strategies based on ultimate efficiency prospects, material requirements, and developmental outlook.
Collapse
Affiliation(s)
- Cong Chen
- School of Material Science and Engineering, State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Dingzigu Road 1, Tianjin 300130, People's Republic of China. and State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, People's Republic of China.
| | - Shijian Zheng
- School of Material Science and Engineering, State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Dingzigu Road 1, Tianjin 300130, People's Republic of China.
| | - Hongwei Song
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, People's Republic of China.
| |
Collapse
|