1
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López-García A, Remiro-Buenamañana S, Neagu D, Carrillo AJ, Serra JM. Squeezing Out Nanoparticles from Perovskites: Controlling Exsolution with Pressure. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2403544. [PMID: 39180444 DOI: 10.1002/smll.202403544] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2024] [Revised: 06/25/2024] [Indexed: 08/26/2024]
Abstract
Nanoparticle exsolution has emerged as a versatile method to functionalize oxides with robust metallic nanoparticles for catalytic and energy applications. By modifying certain external parameters during thermal reduction (temperature, time, reducing gas), some morphological and/or compositional properties of the exsolved nanoparticles can be tuned. Here, it is shown how the application of high pressure (<100 bar H2) enables the control of the exsolution of ternary FeCoNi alloyed nanoparticles from a double perovskite. H2 pressure affects the lattice expansion and the nanoparticle characteristics (size, population, and composition). The composition of the alloyed nanoparticles could be controlled, showing a reversal of the expected thermodynamic trend at 10 and 50 bar, where Fe becomes the main component instead of Ni. In addition, pressure drastically lowers the exsolution temperature to 300 °C, resulting in unprecedented highly-dispersed and small-sized nanoparticles with a similar composition to those obtained at 600 °C and 10 bar. The mechanisms behind the effects of pressure on exsolution are discussed, involving kinetic, surface thermodynamics, and lattice-strain factors. A volcano-like trend of the exsolution extent suggests that competing pressure-dependent mechanisms govern the process. Pressure emerges as a new design tool for metallic nanoparticle exsolution enabling novel nanocatalysts and surface-functionalized materials.
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Affiliation(s)
- Andrés López-García
- Instituto de Tecnología Química (Universitat Politècnica de València-Consejo Superior de Investigaciones Científicas), València, 46022, Spain
| | - Sonia Remiro-Buenamañana
- Instituto de Tecnología Química (Universitat Politècnica de València-Consejo Superior de Investigaciones Científicas), València, 46022, Spain
| | - Dragos Neagu
- Department of Chemical and Process Engineering, University of Strathclyde, Glasgow, G1 1XQ, United Kingdom
| | - Alfonso J Carrillo
- Instituto de Tecnología Química (Universitat Politècnica de València-Consejo Superior de Investigaciones Científicas), València, 46022, Spain
| | - José Manuel Serra
- Instituto de Tecnología Química (Universitat Politècnica de València-Consejo Superior de Investigaciones Científicas), València, 46022, Spain
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2
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Carrillo AJ, López-García A, Delgado-Galicia B, Serra JM. New trends in nanoparticle exsolution. Chem Commun (Camb) 2024; 60:7987-8007. [PMID: 38899785 DOI: 10.1039/d4cc01983k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/21/2024]
Abstract
Many relevant high-temperature chemical processes require the use of oxide-supported metallic nanocatalysts. The harsh conditions under which these processes operate can trigger catalyst degradation via nanoparticle sintering, carbon depositions or poisoning, among others. This primarily affects metallic nanoparticles created via deposition methods with low metal-support interaction. In this respect, nanoparticle exsolution has emerged as a promising method for fabricating oxide-supported nanocatalysts with high interaction between the metal and the oxide support. This is due to the mechanism involved in nanoparticle exsolution, which is based on the migration of metal cations in the oxide support to its surface, where they nucleate and grow as metallic nanoparticles partially embedded in the oxide. This anchorage confers high robustness against sintering or coking-related problems. For these reasons, exsolution has attracted great interest in the last few years. Multiple works have been devoted to proving the high catalytic stability of exsolved metallic nanoparticles in several applications for high-temperature energy storage and conversion. Additionally, considerable attention has been directed towards understanding the underlying mechanism of metallic nanoparticle exsolution. However, this growing field has not been limited to these types of studies and recent discoveries at the forefront of materials design have opened new research avenues. In this work, we define six new trends in nanoparticle exsolution, taking a tour through the most important advances that have been recently reported.
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Affiliation(s)
- Alfonso J Carrillo
- Instituto de Tecnología Química, Universitat Politècnica de València, Consejo Superior de Investigaciones Científicas, 46022 Valencia, Spain.
| | - Andrés López-García
- Instituto de Tecnología Química, Universitat Politècnica de València, Consejo Superior de Investigaciones Científicas, 46022 Valencia, Spain.
| | - Blanca Delgado-Galicia
- Instituto de Tecnología Química, Universitat Politècnica de València, Consejo Superior de Investigaciones Científicas, 46022 Valencia, Spain.
| | - Jose M Serra
- Instituto de Tecnología Química, Universitat Politècnica de València, Consejo Superior de Investigaciones Científicas, 46022 Valencia, Spain.
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3
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Li Z, Wang J, Xu L, Wang L, Shang H, Ying H, Zhao Y, Wen L, Guo C, Zheng X. Achieving Reliable and Ultrafast Memristors via Artificial Filaments in Silk Fibroin. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308843. [PMID: 37934889 DOI: 10.1002/adma.202308843] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Revised: 10/28/2023] [Indexed: 11/09/2023]
Abstract
The practical implementation of memristors in neuromorphic computing and biomimetic sensing suffers from unexpected temporal and spatial variations due to the stochastic formation and rupture of conductive filaments (CFs). Here, the biocompatible silk fibroin (SF) is patterned with an on-demand nanocone array by using thermal scanning probe lithography (t-SPL) to guide and confine the growth of CFs in the silver/SF/gold (Ag/SF/Au) memristor. Benefiting from the high fabrication controllability, cycle-to-cycle (temporal) standard deviation of the set voltage for the structured memristor is significantly reduced by ≈95.5% (from 1.535 to 0.0686 V) and the device-to-device (spatial) standard deviation is also reduced to 0.0648 V. Besides, the statistical relationship between the structural nanocone design and the resultant performance is confirmed, optimizing at the small operation voltage (≈0.5 V) and current (100 nA), ultrafast switching speed (sub-100 ns), large on/off ratio (104 ), and the smallest switching slope (SS < 0.01 mV dec-1 ). Finally, the short-term plasticity and leaky integrated-and-fire behavior are emulated, and a reliable thermal nociceptor system is demonstrated for practical neuromorphic applications.
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Affiliation(s)
- Zishun Li
- School of Engineering, Westlake University, Hangzhou, Zhejiang, 310030, China
| | - Jiaqi Wang
- School of Engineering, Westlake University, Hangzhou, Zhejiang, 310030, China
| | - Lanxin Xu
- School of Engineering, Westlake University, Hangzhou, Zhejiang, 310030, China
| | - Li Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Hongpeng Shang
- School of Engineering, Westlake University, Hangzhou, Zhejiang, 310030, China
| | - Haoting Ying
- School of Engineering, Westlake University, Hangzhou, Zhejiang, 310030, China
| | - Yingjie Zhao
- School of Engineering, Westlake University, Hangzhou, Zhejiang, 310030, China
| | - Liaoyong Wen
- School of Engineering, Westlake University, Hangzhou, Zhejiang, 310030, China
- Research Center for Industries of the Future, Westlake University, Hangzhou, Zhejiang, 310030, China
| | - Chengchen Guo
- School of Engineering, Westlake University, Hangzhou, Zhejiang, 310030, China
- Research Center for Industries of the Future, Westlake University, Hangzhou, Zhejiang, 310030, China
- Westlake Laboratory of Life Sciences and Biomedicine, Hangzhou, Zhejiang, 310024, China
| | - Xiaorui Zheng
- School of Engineering, Westlake University, Hangzhou, Zhejiang, 310030, China
- Research Center for Industries of the Future, Westlake University, Hangzhou, Zhejiang, 310030, China
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4
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Dou H, Lin Z, Hu Z, Tsai BK, Zheng D, Song J, Lu J, Zhang X, Jia Q, MacManus-Driscoll JL, Ye PD, Wang H. Self-Assembled Au Nanoelectrodes: Enabling Low-Threshold-Voltage HfO 2-Based Artificial Neurons. NANO LETTERS 2023; 23:9711-9718. [PMID: 37875263 PMCID: PMC10636789 DOI: 10.1021/acs.nanolett.3c02217] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/13/2023] [Revised: 09/20/2023] [Indexed: 10/26/2023]
Abstract
Filamentary-type resistive switching devices, such as conductive bridge random-access memory and valence change memory, have diverse applications in memory and neuromorphic computing. However, the randomness in filament formation poses challenges to device reliability and uniformity. To overcome this issue, various defect engineering methods have been explored, including doping, metal nanoparticle embedding, and extended defect utilization. In this study, we present a simple and effective approach using self-assembled uniform Au nanoelectrodes to controll filament formation in HfO2 resistive switching devices. By concentrating the electric field near the Au nanoelectrodes within the BaTiO3 matrix, we significantly enhanced the device stability and reduced the threshold voltage by up to 45% in HfO2-based artificial neurons compared to the control devices. The threshold voltage reduction is attributed to the uniformly distributed Au nanoelectrodes in the insulating matrix, as confirmed by COMSOL simulation. Our findings highlight the potential of nanostructure design for precise control of filamentary-type resistive switching devices.
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Affiliation(s)
- Hongyi Dou
- School
of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Zehao Lin
- Elmore
School of Electrical Engineering, Purdue
University, West Lafayette, Indiana 47907, United States
| | - Zedong Hu
- Elmore
School of Electrical Engineering, Purdue
University, West Lafayette, Indiana 47907, United States
| | - Benson Kunhung Tsai
- School
of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Dongqi Zheng
- Elmore
School of Electrical Engineering, Purdue
University, West Lafayette, Indiana 47907, United States
| | - Jiawei Song
- School
of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Juanjuan Lu
- School
of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Xinghang Zhang
- School
of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Quanxi Jia
- Department
of Materials Design and Innovation, School of Engineering and Applied
Sciences, University at Buffalo, The State
University of New York, Buffalo, New York 14260, United States
| | | | - Peide D. Ye
- Elmore
School of Electrical Engineering, Purdue
University, West Lafayette, Indiana 47907, United States
| | - Haiyan Wang
- School
of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Elmore
School of Electrical Engineering, Purdue
University, West Lafayette, Indiana 47907, United States
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5
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O'Leary W, Giordano L, Park J, Nonnenmann SS, Shao-Horn Y, Rupp JLM. Influence of Sr-Site Deficiency, Ca/Ba/La Doping on the Exsolution of Ni from SrTiO 3. J Am Chem Soc 2023. [PMID: 37318138 DOI: 10.1021/jacs.2c12011] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Cermet catalysts formed via exsolution of metal nanoparticles from perovskites promise to perform better in electro- and thermochemical applications than those synthesized by conventional wet-chemical approaches. However, a shortage of robust material design principles still stands in the way of widespread commercial adoption of exsolution. Working with Ni-doped SrTiO3 solid solutions, we investigated how the introduction of Sr deficiency as well as Ca, Ba, and La doping on the Sr site changed the size and surface density of exsolved Ni nanoparticles. We carried out exsolution on 11 different compositions under fixed conditions. We elucidated the effect of A-site defect size/valence on nanoparticle density and size as well as the effect of composition on nanoparticle immersion and ceramic microstructure. Based on our experimental results, we developed a model that quantitatively predicted a composition's exsolution properties using density functional theory calculations. The model and calculations provide insights into the exsolution mechanism and can be used to find new compositions with high exsolution nanoparticle density.
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Affiliation(s)
- Willis O'Leary
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Livia Giordano
- Department of Materials Science, University of Milano-Bicocca, Milan 20125, Italy
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jieun Park
- Department of Mechanical and Industrial Engineering, University of Massachusetts─Amherst, Amherst, Massachusetts 01002, United States
| | - Stephen S Nonnenmann
- Department of Mechanical and Industrial Engineering, University of Massachusetts─Amherst, Amherst, Massachusetts 01002, United States
| | - Yang Shao-Horn
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jennifer L M Rupp
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Chemistry, Technical University of Munich, Garching 85748, Germany
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6
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Tsurumaki-Fukuchi A, Katase T, Ohta H, Arita M, Takahashi Y. Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics. ACS APPLIED MATERIALS & INTERFACES 2023; 15:16842-16852. [PMID: 36952672 PMCID: PMC10080533 DOI: 10.1021/acsami.2c21568] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Accepted: 03/13/2023] [Indexed: 06/18/2023]
Abstract
Amorphous metal oxides with analog resistive switching functions (i.e., continuous controllability of the electrical resistance) are gaining emerging interest due to their neuromorphic functionalities promising for energy efficient electronics. The mechanisms are currently attributed to field-driven migration of the constituent ions, but the applications are being hindered by the limited understanding of the physical mechanisms due to the difficulty in analyzing the causal ion migration, which occurs on a nanometer or even atomic scale. Here, the direct electrical transport measurement of analog resistive switching and ångström scale imaging of the causal ion migration is demonstrated in amorphous TaOx (a-TaOx) by conductive atomic force microscopy. Atomically flat thin films of a-TaOx, which is a practical material for commercial resistive random access memory, are fabricated in this study, and the mechanisms of the three known types of analog resistive switching phenomena (current-dependent set, voltage-dependent reset, and time-dependent switching) are directly visualized on the surfaces. The observations indicate that highly analog type of resistive switching can be induced in a-TaOx by inducing the continuous redox reactions for 2.0 < x < 2.5, which are characteristic of a-TaOx. The measurements also demonstrate drastic control of the switching stochasticity, which is attributable to controlled segregation of a metastable a-TaO2 phase. The findings provide direct clues for tuning the analog resistive switching characteristics of amorphous metal oxides and developing new functions for future neuromorphic computing.
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Affiliation(s)
| | - Takayoshi Katase
- Laboratory
for Materials and Structures, Institute
of Innovative Research, Tokyo Institute of Technology, Yokohama 226-8503, Japan
| | - Hiromichi Ohta
- Research
Institute for Electronic Science, Hokkaido
University, Sapporo 001-0020, Japan
| | - Masashi Arita
- Faculty
of Information Science and Technology, Hokkaido
University, Sapporo 060-0814, Japan
| | - Yasuo Takahashi
- Faculty
of Information Science and Technology, Hokkaido
University, Sapporo 060-0814, Japan
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7
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Ruh T, Berkovec D, Schrenk F, Rameshan C. Exsolution on perovskite oxides: morphology and anchorage of nanoparticles. Chem Commun (Camb) 2023; 59:3948-3956. [PMID: 36916176 PMCID: PMC10065136 DOI: 10.1039/d3cc00456b] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/15/2023]
Abstract
Perovskites are very promising materials for a wide range of applications (such as catalysis, solid oxide fuel cells…) due to beneficial general properties (e.g. stability at high temperatures) and tunability - doping both A- and B-site cations opens the path to a materials design approach that allows specific properties to be finely tuned towards applications. A major asset of perovskites is the ability to form nanoparticles on the surface under certain conditions in a process called "exsolution". Exsolution leads to the decoration of the material's surface with finely dispersed nanoparticles (which can be metallic or oxidic - depending on the experimental conditions) made from B-site cations of the perovskite lattice (here, doping comes into play, as B-site doping allows control over the constitution of the nanoparticles). In fact, the ability to undergo exsolution is one of the main reasons that perovskites are currently a hot topic of intensive research in catalysis and related fields. Exsolution on perovskites has been heavily researched in the last couple of years: various potential catalysts have been tested with different reactions, the oxide backbone materials and the exsolved nanoparticles have been investigated with a multitude of different methods, and the effect of different exsolution parameters on the resulting nanoparticles has been studied. Despite all this, to our knowledge no comprehensive effort was made so far to evaluate these studies with respect to the effect that the exsolution conditions have on anchorage and morphology of the nanoparticles. Therefore, this highlight aims to provide an overview of nanoparticles exsolved from oxide-based perovskites with a focus on the conditions leading to nanoparticle exsolution.
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Affiliation(s)
- Thomas Ruh
- Chair of Physical Chemistry, Montanuniversity Leoben, 8700 Leoben, Austria. .,Institute of Materials Chemistry, TU Wien, 1060 Vienna, Austria
| | | | - Florian Schrenk
- Chair of Physical Chemistry, Montanuniversity Leoben, 8700 Leoben, Austria.
| | - Christoph Rameshan
- Chair of Physical Chemistry, Montanuniversity Leoben, 8700 Leoben, Austria. .,Institute of Materials Chemistry, TU Wien, 1060 Vienna, Austria
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8
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Aguilera-Pedregosa C, Maldonado D, González MB, Moreno E, Jiménez-Molinos F, Campabadal F, Roldán JB. Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories. MICROMACHINES 2023; 14:630. [PMID: 36985037 PMCID: PMC10057622 DOI: 10.3390/mi14030630] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/14/2023] [Revised: 02/07/2023] [Accepted: 03/06/2023] [Indexed: 06/18/2023]
Abstract
A methodology to estimate the device temperature in resistive random access memories (RRAMs) is presented. Unipolar devices, which are known to be highly influenced by thermal effects in their resistive switching operation, are employed to develop the technique. A 3D RRAM simulator is used to fit experimental data and obtain the maximum and average temperatures of the conductive filaments (CFs) that are responsible for the switching behavior. It is found that the experimental CFs temperature corresponds to the maximum simulated temperatures obtained at the narrowest sections of the CFs. These temperature values can be used to improve compact models for circuit simulation purposes.
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Affiliation(s)
- Cristina Aguilera-Pedregosa
- Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, 18071 Granada, Spain
| | - David Maldonado
- Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, 18071 Granada, Spain
| | - Mireia B. González
- Institut de Microelectrònica de Barcelona, IMB-CNM (CSIC), Carrer dels Til·lers s/n, Campus UAB, 08193 Bellaterra, Spain
| | - Enrique Moreno
- Departamento de Física y Matemáticas, Facultad de Ciencias, Universidad de Alcalá, Pl. de San Diego s/n, Alcalá de Henares, 28801 Madrid, Spain
| | - Francisco Jiménez-Molinos
- Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, 18071 Granada, Spain
| | - Francesca Campabadal
- Institut de Microelectrònica de Barcelona, IMB-CNM (CSIC), Carrer dels Til·lers s/n, Campus UAB, 08193 Bellaterra, Spain
| | - Juan B. Roldán
- Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, 18071 Granada, Spain
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9
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Kim H, Jan A, Kwon DH, Ji HI, Yoon KJ, Lee JH, Jun Y, Son JW, Yang S. Exsolution of Ru Nanoparticles on BaCe 0.9 Y 0.1 O 3-δ Modifying Geometry and Electronic Structure of Ru for Ammonia Synthesis Reaction Under Mild Conditions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205424. [PMID: 36464649 DOI: 10.1002/smll.202205424] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2022] [Revised: 11/22/2022] [Indexed: 06/17/2023]
Abstract
Green ammonia is an efficient, carbon-free energy carrier and storage medium. The ammonia synthesis using green hydrogen requires an active catalyst that operates under mild conditions. The catalytic activity can be promoted by controlling the geometry and electronic structure of the active species. An exsolution process is implemented to improve catalytic activity by modulating the geometry and electronic structure of Ru. Ru nanoparticles exsolved on a BaCe0.9 Y0.1 O3-δ support exhibit uniform size distribution, 5.03 ± 0.91 nm, and exhibited one of the highest activities, 387.31 mmolNH3 gRu -1 h-1 (0.1 MPa and 450 °C). The role of the exsolution and BaCe0.9 Y0.1 O3-δ support is studied by comparing the catalyst with control samples and in-depth characterizations. The optimal nanoparticle size is maintained during the reaction, as the Ru nanoparticles prepared by exsolution are well-anchored to the support with in-plane epitaxy. The electronic structure of Ru is modified by unexpected in situ Ba promoter accumulation around the base of the Ru nanoparticles.
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Affiliation(s)
- Hayoung Kim
- Energy Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Graduate School of Energy and Environment (KU-KIST Green School), Korea University, Seoul, 02841, Republic of Korea
| | - Asif Jan
- Energy Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Nanomaterials Science and Engineering, Korea University of Science and Technology (UST), KIST Campus, Seoul, 02792, Republic of Korea
| | - Deok-Hwang Kwon
- Energy Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Ho-Il Ji
- Energy Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Nanomaterials Science and Engineering, Korea University of Science and Technology (UST), KIST Campus, Seoul, 02792, Republic of Korea
| | - Kyung Joong Yoon
- Energy Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Yonsei-KIST Convergence Research Institute, Seoul, 02792, Republic of Korea
| | - Jong-Ho Lee
- Energy Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Nanomaterials Science and Engineering, Korea University of Science and Technology (UST), KIST Campus, Seoul, 02792, Republic of Korea
| | - Yongseok Jun
- Graduate School of Energy and Environment (KU-KIST Green School), Korea University, Seoul, 02841, Republic of Korea
| | - Ji-Won Son
- Energy Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Graduate School of Energy and Environment (KU-KIST Green School), Korea University, Seoul, 02841, Republic of Korea
| | - Sungeun Yang
- Energy Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Nanomaterials Science and Engineering, Korea University of Science and Technology (UST), KIST Campus, Seoul, 02792, Republic of Korea
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10
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Zhang X, Wu C, Lv Y, Zhang Y, Liu W. High-Performance Flexible Polymer Memristor Based on Stable Filamentary Switching. NANO LETTERS 2022; 22:7246-7253. [PMID: 35984717 DOI: 10.1021/acs.nanolett.2c02765] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Polymer-based atomic switch memristors via the formation/dissolution of atomic-scale conductive filaments are considered as the leading candidate for next-generation nonvolatile memory. However, the instability of conductive filaments of incomplete bridge makes their switching performances unsatisfied. In this work, we report a flexible polymeric memristor using polyethylenimine incorporated with silver salt. The memristor device exhibited superior performances at room temperature with a favorable endurance, high ON/OFF ratio, good retention, and low operating voltage. These satisfactory performances are attributed to the pre-existing Ag ions in the polymer, guiding the formation of a robust Ag filament. In addition, the device shows stable bipolar switching behavior in bending conditions or after hundreds of bending cycles. In our work, we provide a simple and efficient method to construct robust filament-based memristors for flexible electronics.
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Affiliation(s)
- Xinshui Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Cong Wu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Yinjie Lv
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Yue Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Wei Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
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11
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Barman A, Das D, Deshmukh S, Sarkar PK, Banerjee D, Hübner R, Gupta M, Saini CP, Kumar S, Johari P, Dhar S, Kanjilal A. Aliovalent Ta-Doping-Engineered Oxygen Vacancy Configurations for Ultralow-Voltage Resistive Memory Devices: A DFT-Supported Experimental Study. ACS APPLIED MATERIALS & INTERFACES 2022; 14:34822-34834. [PMID: 35866235 DOI: 10.1021/acsami.2c05089] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Alteration of transport properties of any material, especially metal oxides, by doping suitable impurities is not straightforward as it may introduce multiple defects like oxygen vacancies (Vo) in the system. It plays a decisive role in controlling the resistive switching (RS) performance of metal oxide-based memory devices. Therefore, a judicious choice of dopants and their atomic concentrations is crucial for achieving an optimum Vo configuration. Here, we show that the rational designing of RS memory devices with cationic dopants (Ta), in particular, Au/Ti1-xTaxO2-δ/Pt devices, is promising for the upcoming non-volatile memory technology. Indeed, a current window of ∼104 is realized at an ultralow voltage as low as 0.25 V with significant retention (∼104 s) and endurance (∼105 cycles) of the device by considering 1.11 at % Ta doping. The obtained device parameters are compared with those in the available literature to establish its excellent performance. Furthermore, using detailed experimental analyses and density functional theory (DFT)-based first-principles calculations, we comprehend that the meticulous presence of Vo configurations and the columnar-like dendritic structures is crucial for achieving ultralow-voltage bipolar RS characteristics. In fact, the dopant-mediated Vo interactions are found to be responsible for the enhancement in local current conduction, as evidenced from the DFT-simulated electron localization function plots, and these, in turn, augment the device performance. Overall, the present study on cationic-dopant-controlled defect engineering could pave a neoteric direction for future energy-efficient oxide memristors.
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Affiliation(s)
- Arabinda Barman
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Dadri, Gautam Buddha Nagar, Greater Noida, Uttar Pradesh 201 314, India
- Department of Physics, Dinhata College, Dinhata, West Bengal 736 135, India
| | - Dip Das
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Dadri, Gautam Buddha Nagar, Greater Noida, Uttar Pradesh 201 314, India
| | - Sujit Deshmukh
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Dadri, Gautam Buddha Nagar, Greater Noida, Uttar Pradesh 201 314, India
| | - Pranab Kumar Sarkar
- Department of Applied Sciences and Humanities, Assam University, Silchar, Assam 788 011, India
| | - Debosmita Banerjee
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Dadri, Gautam Buddha Nagar, Greater Noida, Uttar Pradesh 201 314, India
| | - René Hübner
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dersden 01328, Germany
| | - Mukul Gupta
- UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, Madhya Pradesh 452 001, India
| | | | - Shammi Kumar
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Dadri, Gautam Buddha Nagar, Greater Noida, Uttar Pradesh 201 314, India
| | - Priya Johari
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Dadri, Gautam Buddha Nagar, Greater Noida, Uttar Pradesh 201 314, India
| | - Sankar Dhar
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Dadri, Gautam Buddha Nagar, Greater Noida, Uttar Pradesh 201 314, India
| | - Aloke Kanjilal
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Dadri, Gautam Buddha Nagar, Greater Noida, Uttar Pradesh 201 314, India
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12
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Gao F, Cui B, Wang C, Li X, Li B, Zhan S, Shen Y, Zhao X, Sun C, Wang C, Wang Y, Zeng Z, Cui H. Nano-EMB-SP improves the solubility, foliar affinity, photostability and bioactivity of emamectin benzoate. PEST MANAGEMENT SCIENCE 2022; 78:3717-3724. [PMID: 35622946 DOI: 10.1002/ps.7015] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2022] [Revised: 05/24/2022] [Accepted: 05/27/2022] [Indexed: 06/15/2023]
Abstract
BACKGROUND Emamectin benzoate (EMB), a frequently used biopesticide, is poorly soluble in water, making it difficult to wet the leaf surface, is prone to degrade in sunlight and readily loses its bioactivity. Traditional methods such as organic solvent application, pH adjustment and addition of photoprotectants either increase the economic and environmental costs or barely achieve the desired goal. We hypothesized that nanotechnology could improve the solubility, foliar affinity, photostability and bioactivity of EMB. This research set out to prepare a nano-EMB solid powder (nano-EMB-SP) and test this hypothesis. RESULTS Nano-EMB-SP was prepared using a self-emulsifying method combined with carrier solidification. The mean particle size and Polydispersity index (PDI) of nano-EMB-SP were 14.64 nm and 0.24, respectively. A scanning electron microscopy image showed that EMB nanoparticles were mainly spherical or ellipsoidal in shape. Without organic solvent, the aqueous solubility of EMB in nano-EMB-SP was 4500 mg L-1 , at least 14-fold that of the EMB soluble granule (EMB-SG), which is solubilized by pH adjustment. Excellent foliar affinity of EMB was achieved by nano-EMB-SP, which completely wet and penetrated the superhydrophobic surface of cabbage (Brassica oleracea L.) leaf. Without photoprotectants, up to 82% of EMB content can be protected from ultraviolet (UV) damage in nano-EMB-SP. The combined effects of excellent photostability and foliar affinity of nano-EMB-SP led to the bioactivity of EMB being almost unchanged before and after UV radiation. CONCLUSION Nano-EMB-SP is an eco-friendly and efficient way to improve the solubility, foliar affinity, photostability and bioactivity of EMB. This research provides a good approach to improving the efficacy of poorly soluble and UV-sensitive pesticides. © 2022 Society of Chemical Industry.
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Affiliation(s)
- Fei Gao
- Institute of Environment and Sustainable Development in Agriculture, Chinese Academy of Agricultural Sciences, Beijing, People's Republic of China
| | - Bo Cui
- Institute of Environment and Sustainable Development in Agriculture, Chinese Academy of Agricultural Sciences, Beijing, People's Republic of China
| | - Chong Wang
- Institute of Environment and Sustainable Development in Agriculture, Chinese Academy of Agricultural Sciences, Beijing, People's Republic of China
| | - Xingye Li
- Institute of Environment and Sustainable Development in Agriculture, Chinese Academy of Agricultural Sciences, Beijing, People's Republic of China
| | - Bohao Li
- Institute of Environment and Sustainable Development in Agriculture, Chinese Academy of Agricultural Sciences, Beijing, People's Republic of China
| | - Shenshan Zhan
- Institute of Environment and Sustainable Development in Agriculture, Chinese Academy of Agricultural Sciences, Beijing, People's Republic of China
| | - Yue Shen
- Institute of Environment and Sustainable Development in Agriculture, Chinese Academy of Agricultural Sciences, Beijing, People's Republic of China
| | - Xiang Zhao
- Institute of Environment and Sustainable Development in Agriculture, Chinese Academy of Agricultural Sciences, Beijing, People's Republic of China
| | - Changjiao Sun
- Institute of Environment and Sustainable Development in Agriculture, Chinese Academy of Agricultural Sciences, Beijing, People's Republic of China
| | - Chunxin Wang
- Institute of Environment and Sustainable Development in Agriculture, Chinese Academy of Agricultural Sciences, Beijing, People's Republic of China
| | - Yan Wang
- Institute of Environment and Sustainable Development in Agriculture, Chinese Academy of Agricultural Sciences, Beijing, People's Republic of China
| | - Zhanghua Zeng
- Institute of Environment and Sustainable Development in Agriculture, Chinese Academy of Agricultural Sciences, Beijing, People's Republic of China
| | - Haixin Cui
- Institute of Environment and Sustainable Development in Agriculture, Chinese Academy of Agricultural Sciences, Beijing, People's Republic of China
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13
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Xue Q, Peng Y, Cao L, Xia Y, Liang J, Chen CC, Li M, Hang T. Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array. ACS APPLIED MATERIALS & INTERFACES 2022; 14:25710-25721. [PMID: 35604125 DOI: 10.1021/acsami.2c03978] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Resistive random-access memory (RRAM) has been extensively investigated for 20 years due to its excellent advantages, including scalability, switching speed, compatibility with the complementary metal oxide semiconductor process, and neuromorphic computing application. However, the issue of memristor reliability for cycle to cycle and device to device resulting from the random ion drift and diffusion in solid-state thin films is still a great challenge for commercialization. Therefore, controlling the internal ionic process to improve the memristor performance and reliability is a primary and urgent task. Here, a Ni nanocone array prepared by an electrodeposition method is integrated with an Ag/Al2O3/Pt resistive switching device. The nanocone-array-based memristor yields superior switching performance, including an ultralow set voltage (-0.37 V), a concentrated voltage/resistance distribution (CV 14.8%/32.7%), robust endurance (>105 cycles), and multilevel storage capability. A finite element analysis, transmission electron microscope observation, and current mapping test indicate that the local enhancement of the electric field confines the ionic migration process and yields a predictable formation and dissolution process of the conductive filament. The nanocone-array-based RRAM device provides a new and feasible method to control the conductive filament growth reliably, which paves the way for memristor development.
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Affiliation(s)
- Qi Xue
- State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Yan Peng
- State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Liang Cao
- State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Yuanyuan Xia
- State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Jianghu Liang
- State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Chun-Chao Chen
- State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Ming Li
- State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Tao Hang
- State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
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14
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Exploring the Stability of Fe–Ni Alloy Nanoparticles Exsolved from Double-Layered Perovskites for Dry Reforming of Methane. Catalysts 2021. [DOI: 10.3390/catal11060741] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022] Open
Abstract
Exsolution is emerging as a promising route for the creation of nanoparticles that remain anchored to the oxide support, imparting remarkable stability in high temperature chemical processes such as dry reforming of methane. This process takes place at temperatures around 850 °C, which causes sintering-related issues in catalysts prepared using conventional impregnation methods, which could be overcome by using exsolution functionalized oxides. In this work, FeNi3 alloy nanoparticles exsolved from Sr2FexNi1-xMoO6-δ double-layered perovskites were evaluated as a dry reforming catalyst, paying special attention to structure–activity relationships. Our results indicate that increasing the Ni content favors the nanoparticle dispersion, eventually leading to increased CO2 and CH4 conversions. The exsolved nanoparticles presented remarkable nanoparticle size (ca. 30 nm) stability after the 10 h treatment, although the formation of some phase segregations over the course of the reaction caused a minor decrease in the nanoparticle population. Overall, the results presented here serve as materials processing guidelines that could find further potential use in the design of more efficient (electro)catalysts in other fuel production or energy conversion technologies.
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