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Barraj I, Mestiri H, Masmoudi M. Overview of Memristor-Based Design for Analog Applications. MICROMACHINES 2024; 15:505. [PMID: 38675316 PMCID: PMC11051807 DOI: 10.3390/mi15040505] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2024] [Revised: 03/23/2024] [Accepted: 04/04/2024] [Indexed: 04/28/2024]
Abstract
Memristor-based design has gained significant attention in recent years due to its potential to revolutionize various fields such as artificial intelligence, neuromorphic computing, non-volatile memory, signal processing, filtering, and radio frequency design. These emerging devices offer unique advantages such as non-volatile memory, low power consumption, and a high integration density. Their scalability and compatibility with existing fabrication processes make them an attractive option for industry adoption, paving the way for faster and more efficient architecture design. Researchers are actively exploring ways to optimize memristor technology for practical applications to harness its full potential. This includes developing novel materials and structures as well as improving the reliability and performance of memristors in various applications. This paper provides a comprehensive overview of the current advancements in memristor technology and their potential impact on the design of future electronic systems, focusing on its applications in the analog domain. By exploring the latest research and development in this field, researchers can gain valuable insights into how analog memristors can be integrated into their designs to achieve enhanced performance and efficiency. The paper delves into the fundamental principles of memristor technology, exploring its unique characteristics and advantages over traditional electronic components. It discusses the potential impact of memristors and challenges in the analog field of electronics, and highlights the progress made in their integration with existing circuitry, enabling novel functionalities and improved performance. Furthermore, it highlights ongoing research efforts to improve the performance and reliability of memristors, as well as the potential limitations and challenges that need to be addressed for widespread adoption, including variability in performance and reliability.
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Affiliation(s)
- Imen Barraj
- Department of Computer Engineering, College of Computer Engineering and Sciences, Prince Sattam Bin Abdulaziz University, Al-Kharj 11942, Saudi Arabia
- Systems Integration & Emerging Energies (SI2E), Electrical Engineering Department, National Engineers School of Sfax, University of Sfax, Sfax 3029, Tunisia
- Higher Institute of Computer Science and Multimedia of Gabes (ISIMG), University of Gabes, Gabes 6029, Tunisia
| | - Hassen Mestiri
- Department of Computer Engineering, College of Computer Engineering and Sciences, Prince Sattam Bin Abdulaziz University, Al-Kharj 11942, Saudi Arabia
- Higher Institute of Applied Sciences and Technology of Sousse, University of Sousse, Sousse 4002, Tunisia
- Electronics and Micro-Electronics Laboratory, Faculty of Sciences of Monastir, University of Monastir, Monastir 5000, Tunisia
| | - Mohamed Masmoudi
- Systems Integration & Emerging Energies (SI2E), Electrical Engineering Department, National Engineers School of Sfax, University of Sfax, Sfax 3029, Tunisia
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Luo H, Lu L, Zhang J, Yun Y, Jiang S, Tian Y, Guo Z, Zhao S, Wei W, Li W, Hu B, Wang R, Li S, Chen M, Li C. In Situ Unveiling of the Resistive Switching Mechanism of Halide Perovskite-Based Memristors. J Phys Chem Lett 2024; 15:2453-2461. [PMID: 38407025 DOI: 10.1021/acs.jpclett.3c03558] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/27/2024]
Abstract
The organic-inorganic halide perovskite has become one of the most promising candidates for next-generation memory devices, i.e. memristors, with excellent performance and solution-processable preparation. Yet, the mechanism of resistive switching in perovskite-based memristors remains ambiguous due to a lack of in situ visualized characterization methods. Here, we directly observe the switching process of perovskite memristors with in situ photoluminescence (PL) imaging microscopy under an external electric field. Furthermore, the corresponding element composition of conductive filaments (CFs) is studied, indicating that the metallic CFs with respect to the activity of the top electrode are essential for device performance. Finally, electrochemical impedance spectroscopy (EIS) is conducted to reveal that the transition of ion states is associated with the formation of metallic CFs. This study provides in-depth insights into the switching mechanism of perovskite memristors, paving a pathway to develop and optimize high-performance perovskite memristors for large-scale applications.
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Affiliation(s)
- Hongqiang Luo
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Lihua Lu
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Jing Zhang
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Yikai Yun
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Sijie Jiang
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Yuanyuan Tian
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Zhongli Guo
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Shanshan Zhao
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Wenjie Wei
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Wenfeng Li
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Beier Hu
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Rui Wang
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China
| | | | - Mengyu Chen
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China
- Future Display Institute of Xiamen, Xiamen 361005, P. R. China
| | - Cheng Li
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China
- Future Display Institute of Xiamen, Xiamen 361005, P. R. China
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Xiao Y, Jiang B, Zhang Z, Ke S, Jin Y, Wen X, Ye C. A review of memristor: material and structure design, device performance, applications and prospects. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2023; 24:2162323. [PMID: 36872944 PMCID: PMC9980037 DOI: 10.1080/14686996.2022.2162323] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/16/2022] [Revised: 12/09/2022] [Accepted: 12/21/2022] [Indexed: 06/18/2023]
Abstract
With the booming growth of artificial intelligence (AI), the traditional von Neumann computing architecture based on complementary metal oxide semiconductor devices are facing memory wall and power wall. Memristor based in-memory computing can potentially overcome the current bottleneck of computer and achieve hardware breakthrough. In this review, the recent progress of memory devices in material and structure design, device performance and applications are summarized. Various resistive switching materials, including electrodes, binary oxides, perovskites, organics, and two-dimensional materials, are presented and their role in the memristor are discussed. Subsequently, the construction of shaped electrodes, the design of functional layer and other factors influencing the device performance are analyzed. We focus on the modulation of the resistances and the effective methods to enhance the performance. Furthermore, synaptic plasticity, optical-electrical properties, the fashionable applications in logic operation and analog calculation are introduced. Finally, some critical issues such as the resistive switching mechanism, multi-sensory fusion, system-level optimization are discussed.
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Affiliation(s)
- Yongyue Xiao
- Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
| | - Bei Jiang
- Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
| | - Zihao Zhang
- Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
| | - Shanwu Ke
- Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
| | - Yaoyao Jin
- Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
| | - Xin Wen
- Faculty of Chemical Technology and Engineering, West Pomeranian University of Technology in Szczecin, Szczecin, Poland
| | - Cong Ye
- Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei University, Wuhan, China
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All-Printed Flexible Memristor with Metal–Non-Metal-Doped TiO2 Nanoparticle Thin Films. NANOMATERIALS 2022; 12:nano12132289. [PMID: 35808124 PMCID: PMC9268177 DOI: 10.3390/nano12132289] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/14/2022] [Revised: 06/29/2022] [Accepted: 06/30/2022] [Indexed: 01/17/2023]
Abstract
A memristor is a fundamental electronic device that operates like a biological synapse and is considered as the solution of classical von Neumann computers. Here, a fully printed and flexible memristor is fabricated by depositing a thin film of metal–non-metal (chromium-nitrogen)-doped titanium dioxide (TiO2). The resulting device exhibited enhanced performance with self-rectifying and forming free bipolar switching behavior. Doping was performed to bring stability in the performance of the memristor by controlling the defects and impurity levels. The forming free memristor exhibited characteristic behavior of bipolar resistive switching with a high on/off ratio (2.5 × 103), high endurance (500 cycles), long retention time (5 × 103 s) and low operating voltage (±1 V). Doping the thin film of TiO2 with metal–non-metal had a significant effect on the switching properties and conduction mechanism as it directly affected the energy bandgap by lowering it from 3.2 eV to 2.76 eV. Doping enhanced the mobility of charge carriers and eased the process of filament formation by suppressing its randomness between electrodes under the applied electric field. Furthermore, metal–non-metal-doped TiO2 thin film exhibited less switching current and improved non-linearity by controlling the surface defects.
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Zhong Z, Jiang Z, Huang J, Gao F, Hu W, Zhang Y, Chen X. 'Stateful' threshold switching for neuromorphic learning. NANOSCALE 2022; 14:5010-5021. [PMID: 35285836 DOI: 10.1039/d1nr05502j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Memristors have promising prospects in developing neuromorphic chips that parallel the brain-level power efficiency and brain-like computational functions. However, the limited available ON/OFF states and high switching voltage in conventional resistive switching (RS) constrain its practical and flexible implementations to emulate biological synaptic functions with low power consumption. We present 'stateful' threshold switching (TS) within the millivoltage range depending on the resistive states of RS, which originates from the charging/discharging parasitic elements of a memristive circuit. Fundamental neuromorphic learning can be facilely implemented based on a single memristor by utilizing four resistive states in 'stateful' TS. Besides the metaplasticity of synaptic learning-forgetting behaviors, multifunctional associative learning, involving acquisition, extinction, recovery, generalization and protective inhibition, was realized with nonpolar operation and power consumption of 5.71 pW. The featured 'stateful' TS with flexible tunability, enriched states, and ultralow operating voltage will provide new directions toward a massive storage unit and bio-inspired neuromorphic system.
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Affiliation(s)
- Zhijian Zhong
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou 510631, PR China.
| | - Zhiguo Jiang
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou 510631, PR China.
| | - Jianning Huang
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou 510631, PR China.
| | - Fangliang Gao
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou 510631, PR China.
| | - Wei Hu
- Key Laboratory of Optoelectronic Technology and System of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, PR China
| | - Yong Zhang
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou 510631, PR China.
| | - Xinman Chen
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou 510631, PR China.
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Niu Y, Jiang K, Dong X, Zheng D, Liu B, Wang H. High performance and low power consumption resistive random access memory with Ag/Fe 2O 3/Pt structure. NANOTECHNOLOGY 2021; 32:505715. [PMID: 34525467 DOI: 10.1088/1361-6528/ac26fd] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2021] [Accepted: 09/14/2021] [Indexed: 06/13/2023]
Abstract
Due to magnetic field tunability and the abundance of iron in the Earth's crust, iron oxide-based resistive random access memory (RRAM) is considered to be low cost and potential for multi-level storage. However, the relatively high operation voltage (>1 V) and small storage window (<100) limit its application. In this work, the devices with simple Ag/Fe2O3/Pt structure exhibit typical bipolar resistive switching with ultralow set voltage (Vset) of 0.16 V, ultralow reset voltage (Vreset) of -0.04 V, high OFF/ON resistance ratio of 103, excellent cycling endurance more than 104and good retention time longer than 104s. Each major parameter has about an order of magnitude improvement compared to the previous data. The devices demonstrate outstanding stable low power consumption quality. Based on the analysis of the experimental results, a percolation model of silver ion migration was established and confirmed that low operation voltage is attributed to the amorphous oxide layer with large porosity. During electrical testing, the compliance current (Ic) and maximum reset voltage (Vmax) can also affect the device performance. This discovery suggests Fe2O3memristor has significant potential for application and provides a new idea for the realization of high-performance low-power RRAM.
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Affiliation(s)
- Yiru Niu
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China
- Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China
| | - Kang'an Jiang
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China
- Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China
| | - Xinyuan Dong
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China
- Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China
| | - Diyuan Zheng
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China
- Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China
| | - Binbin Liu
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China
- Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China
| | - Hui Wang
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China
- Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China
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Li L, Dai T, Liu K, Chang KC, Zhang R, Lin X, Liu HJ, Lai YC, Kuo TP. Achieving complementary resistive switching and multi-bit storage goals by modulating the dual-ion reaction through supercritical fluid-assisted ammoniation. NANOSCALE 2021; 13:14035-14040. [PMID: 34477684 DOI: 10.1039/d1nr03356e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Complementary resistive switching (CRS) is a core requirement in memristor crossbar array construction for neuromorphic computing in view of its capability to avoid the sneak path current. However, previous approaches for implementing CRS are generally based on a complex device structure design and fabrication process or a meticulous current-limiting measurement procedure. In this study, a supercritical fluid-assisted ammoniation (SFA) process is reported to achieve CRS in a single device by endowing the original ordinary switching materials with dual-ion operation. In addition to self-compliant CRS behavior, a multi-bit storage function has also been achieved through the SFA process accompanied by superior retention and reliability. These substantial evolved resistive phenomena are elucidated attentively by our chemical reaction model and physical mechanism model corroborated by the material analysis and current conduction fitting analysis results. The findings in this research present the most efficient way to achieve CRS through only one chemical procedure with significantly improved device performance. Moreover, the supercritical fluid approach envisions tremendous possibilities for further development of materials and electric devices by a low-temperature process, with semiconductor fabrication compatibility and environmental friendliness.
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Affiliation(s)
- Lei Li
- School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, 518055, China.
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Yan Y, Li JC, Chen YT, Wang XY, Cai GR, Park HW, Kim JH, Zhao JS, Hwang CS. Area-Type Electronic Bipolar Switching Al/TiO 1.7/TiO 2/Al Memory with Linear Potentiation and Depression Characteristics. ACS APPLIED MATERIALS & INTERFACES 2021; 13:39561-39572. [PMID: 34378371 DOI: 10.1021/acsami.1c09436] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In electronic bipolar resistive switching (eBRS), the electron trapping and detrapping at the defect sites within the switching layer, such as the highly defective TiO1.7 in this study, constitute the switching mechanism. It is an appealing candidate solution to the nonuniformity issue of resistive switching memory. However, TiO1.7-based eBRS has suffered from a lack of endurance and retention. In this study, a 7 nm-thick stoichiometric TiO2 layer is interposed between an Al bottom electrode and a 50 nm-thick TiO1.7 layer, which is in contact with an Al top electrode. Despite the minimal structural modification, improvements in the electrical performance were substantial. The off-to-on state resistance ratio of 20 and the resistance values could be retained up to 30 000 direct current sweep cycles and 106 alternating current pulse switching cycles. Data retention also significantly improves. Moreover, the device is electroforming-free and shows fully area-type switching characteristics. Such notable improvements are attributed to the favorable energy band structure of the Al/TiO1.7/TiO2/Al structure. The device shows almost linear potentiation and depression characteristics after the repeated pulse voltage applications, which significantly improves the accuracy of the neural network, the synapses of which are composed of the Al/TiO1.7/TiO2/Al memory cells.
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Affiliation(s)
- Yu Yan
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, No. 391, Binshuixi Road, Xiqing District, Tianjin 300384, China
| | - Jia Cheng Li
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, No. 391, Binshuixi Road, Xiqing District, Tianjin 300384, China
| | - Yu Ting Chen
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, No. 391, Binshuixi Road, Xiqing District, Tianjin 300384, China
| | - Xiang Yu Wang
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, No. 391, Binshuixi Road, Xiqing District, Tianjin 300384, China
| | - Gang Ri Cai
- Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, No. 391, Binshuixi Road, Xiqing District, Tianjin 300384, China
| | - Hyeon Woo Park
- Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Daehag-dong, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Ji Hun Kim
- Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Daehag-dong, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Jin Shi Zhao
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, No. 391, Binshuixi Road, Xiqing District, Tianjin 300384, China
| | - Cheol Seong Hwang
- Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Daehag-dong, Gwanak-gu, Seoul 08826, Republic of Korea
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Zhang Y, Han F, Fan S, Zhang Y. Low-Power and Tunable-Performance Biomemristor Based on Silk Fibroin. ACS Biomater Sci Eng 2021; 7:3459-3468. [PMID: 34165975 DOI: 10.1021/acsbiomaterials.1c00513] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Biomemristors have attracted significant attention because of their potential applications in logic operations, nonvolatile memory, and synaptic emulators, thus leading to the urgent need to improve memristive performance. In this work, a silk fibroin (SF)-based memristor, integrated with both low power and low operating current simultaneously, has been reported. Doping the SF with Ag and an ethanol-based post-treatment promote microcrystal formation in the bulk of the SF. This induces carrier transport along fixed, short paths and results in a low set voltage, low operating current, and high memristive stability. Such performances can greatly reduce power consumption and heat generation, beneficial for the accuracy and durability of memristor devices. The memristive mechanism of SF-based memristors with different Ag contents is the space-charge-limited conduction (SCLC) mechanism. In addition, the nonlinear transmission property of SF-based memristors suggests useful applications in bioelectronics.
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Affiliation(s)
- Yi Zhang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, P. R. China
| | - Fang Han
- College of Information Science and Technology, Donghua University, Shanghai 201620, P. R. China
| | - Suna Fan
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, P. R. China
| | - Yaopeng Zhang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, P. R. China
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