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Yang Y, Yuan H, Cheng Y, Yang F, Liu M, Huang K, Wang K, Cheng S, Liu R, Li W, Liang F, Zheng K, Liu L, Tu C, Wang X, Qi Y, Liu Z. Fluid-Dynamics-Rectified Chemical Vapor Deposition (CVD) Preparing Graphene-Skinned Glass Fiber Fabric and Its Application in Natural Energy Harvest. J Am Chem Soc 2024; 146:25035-25046. [PMID: 39213649 DOI: 10.1021/jacs.4c07609] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/04/2024]
Abstract
Graphene chemical vapor deposition (CVD) growth directly on target using substrates presents a significant route toward graphene applications. However, the substrates are usually catalytic-inert and special-shaped; thus, large-scale, high-uniformity, and high-quality graphene growth is challenging. Herein, graphene-skinned glass fiber fabric (GGFF) was developed through graphene CVD growth on glass fiber fabric, a Widely used engineering material. A fluid dynamics rectification strategy was first proposed to synergistically regulate the distribution of carbon species in 3D space and their collisions with hierarchical-structured substrates, through which highly uniform deposition of high-quality graphene on fibers in large-scale 3D-woven fabric was realized. This strategy is universal and applicable to CVD systems using various carbon precursors. GGFF exhibits high electrical conductivity and photothermal conversion capability, based on which a natural energy harvester was first developed. It can harvest both solar and raindrop energy through solar heating and droplet-based electricity generating, presenting promising potentials to alleviate energy burdens.
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Affiliation(s)
- Yuyao Yang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing 100095, China
| | - Hao Yuan
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing 100095, China
| | - Yi Cheng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing 100095, China
| | - Fan Yang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing 100095, China
| | - Mengxiong Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing 100095, China
| | - Kewen Huang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing 100095, China
| | - Kun Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing 100095, China
| | - Shuting Cheng
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing 100095, China
- State Key Laboratory of Heavy Oil Processing, College of Science, China University of Petroleum, Beijing 102249, China
| | - Ruojuan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing 100095, China
| | - Wenjuan Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing 100095, China
| | - Fushun Liang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing 100095, China
| | - Kangyi Zheng
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing 100095, China
- College of Energy Soochow Institute for Energy and Materials Innovations Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou 215006, P. R. China
| | - Longfei Liu
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing 100095, China
- State Key Laboratory of Dynamic Measurement Technology, North University of China, Taiyuan 030051, China
| | - Ce Tu
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing 100095, China
| | - Xiaobai Wang
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing 100095, China
- Department of Chemistry, College of Chemistry and Materials Engineering, Beijing Technology and Business University, Beijing 100048, China
| | - Yue Qi
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing 100095, China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing 100095, China
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2
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Gong X, Dong R, Wang J, Ma L. Towards the selective growth of two-dimensional ordered C xN y compounds via epitaxial substrate mediation. Sci Bull (Beijing) 2024; 69:2212-2220. [PMID: 38729801 DOI: 10.1016/j.scib.2024.04.057] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Revised: 01/17/2024] [Accepted: 04/22/2024] [Indexed: 05/12/2024]
Abstract
Two-dimensional (2D) ordered carbon-nitrogen binary compounds (CxNy) show great potential in many fields owing to their diverse structures and outstanding properties. However, the scalable and selective synthesis of 2D CxNy compounds remain a challenge due to the variable C/N stoichiometry induced coexistence of graphitic, pyridinic, and pyrrolic N species and the competitive growth of graphene. Here, this work systematically explored the mechanism of selective growth of a series of 2D ordered CxNy compounds, namely, the g-C3N4, C2N, C3N, and C5N, on various epitaxial substrates via first-principles calculations. By establishing the thermodynamic phase diagram, it is revealed that the individualized surface interaction and symmetry match between 2D CxNy compounds and substrates together enable the selective epitaxial growth of single crystal 2D CxNy compounds within distinct chemical potential windows of feedstock. The kinetics behaviors of the diffusion and attachment of the decomposed feedstock C/N atoms to the growing CxNy clusters further confirmed the feasibility of the substrate mediated selective growth of 2D CxNy compounds. Moreover, the optimal experimental conditions, including the temperature and partial pressure of feedstock, are suggested for the selective growth of targeted 2D CxNy compound on individual epitaxial substrates by carefully considering the chemical potential of carbon/nitrogen as the functional of experimental parameters based on the standard thermochemical tables. This work provides an insightful understanding on the mechanism of selective epitaxial growth of 2D ordered CxNy compounds for guiding the future experimental design.
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Affiliation(s)
- Xiaoshu Gong
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
| | - Ruikang Dong
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
| | - Jinlan Wang
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China; Suzhou Laboratory, Suzhou 215004, China
| | - Liang Ma
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China; Suzhou Laboratory, Suzhou 215004, China.
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3
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Alsaati SAA, Abdoon RS, Hussein EH, Abduljalil HM, Mohammad RK, Al-Seady MA, Jasim AN, Saleh NAH, Allan L. Unveiling the potential of graphene and S-doped graphene nanostructures for toxic gas sensing and solar sensitizer cell devices: insights from DFT calculations. J Mol Model 2024; 30:191. [PMID: 38811405 DOI: 10.1007/s00894-024-05994-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/21/2024] [Accepted: 05/24/2024] [Indexed: 05/31/2024]
Abstract
CONTEXT In this work, we explore the potential of 2D materials, particularly graphene and its derivatives, for eco-friendly electricity generation and air pollution reduction. Leveraging the significant surface area of graphene nanomaterials, the susceptibility of these graphene-based nanostructures to hazardous substances and their applicability in clean solar cell (SSC) devices were systematically investigated using density functional theory (DFT), as implemented within Gaussian 5.0 code. Time-dependent DFT (TD-DFT) was employed to characterize the UV-visible spectrum of unstrained nanostructures. Herein, we considered three potentially harmful gases-CO, NH3, and Br2. Adsorption calculations revealed a notable interaction between the pure graphene nanostructure and Br2 gas, while the S-doped counterpart exhibited reduced interaction. Saturated S-doped nanostructures demonstrated an enhanced affinity for NH3 and CO gases compared to their pure S-doped counterparts, attributed to the sulfur (S) atom facilitating gas molecule binding to the nanostructure's surface. Furthermore, simulations of the SSC device architecture indicated the superior performance of the pure graphene nanostructure in terms of light-harvesting efficiency, injection energy, and electron injection into the lower conduction band of CBM titanium dioxide (TiO2). These findings suggest a potential avenue for developing nanostructures tailored for SSC devices and gas sensors, offering a dual solution to address air pollution concerns. METHODS Density function theory was used to compute the ground and excited state properties for pure and sulfur-doped graphene nanostructures. The hybrid function B3LYP with a 6-31G* basis set was utilized to describe the exchange correlation. Gauss Sum 2.2 software is used to estimate the density of state (DOS) for all structures under investigation.
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Affiliation(s)
- S A A Alsaati
- College of Basic Education, University of Babylon, Babylon City, 51002, Iraq
| | - Rabab Saadoon Abdoon
- Physics Department, College of Science, University of Babylon, Babylon City, 51002, Iraq
| | - Eman Hamid Hussein
- Physics Department, College of Education for Pure Science, University of Babylon, Babylon City, 51002, Iraq
| | - Hayder M Abduljalil
- Physics Department, College of Science, University of Babylon, Babylon City, 51002, Iraq
| | - Rajaa K Mohammad
- Department of Physics, College of Science, University of Kerbala, Kerbala City, 56001, Iraq
| | - Mohammed A Al-Seady
- Department of Theoretical Physics, University of Szeged, Tisza Lajos krt. 84-86, Szeged City, 6720, Hungary.
- Environmental Centre and Research Studies, University of Babylon, Babylon City, 51002, Iraq.
| | - Ansaf N Jasim
- Environmental Centre and Research Studies, University of Babylon, Babylon City, 51002, Iraq
| | - Noor Al-Huda Saleh
- Physics Department, College of Science, University of Babylon, Babylon City, 51002, Iraq
| | - Lynet Allan
- Department of Physics, Faculty of Science and Technology, University of Nairobi, P.O.Box 30197-00100, Nairobi, Kenya
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4
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Li C, Pan Z, Hao W, Li X, Miao R, Wang A. Graphene-Based ESD Protection for Future ICs. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1426. [PMID: 37111011 PMCID: PMC10145349 DOI: 10.3390/nano13081426] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Revised: 04/16/2023] [Accepted: 04/18/2023] [Indexed: 06/19/2023]
Abstract
On-chip electrostatic discharge (ESD) protection is required for all integrated circuits (ICs). Conventional on-chip ESD protection relies on in-Si PN junction-based device structures for ESD. However, such in-Si PN-based ESD protection solutions pose significant challenges related to ESD protection design overhead, including parasitic capacitance, leakage current, and noises, as well as large chip area consumption and difficulty in IC layout floor planning. The design overhead effects of ESD protection devices are becoming unacceptable to modern ICs as IC technologies continuously advance, which is an emerging design-for-reliability challenge for advanced ICs. In this paper, we review the concept development of disruptive graphene-based on-chip ESD protection comprising a novel graphene nanoelectromechanical system (gNEMS) ESD switch and graphene ESD interconnects. This review discusses the simulation, design, and measurements of the gNEMS ESD protection structures and graphene ESD protection interconnects. The review aims to inspire non-traditional thinking for future on-chip ESD protection.
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5
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Zhang ZC, Chen XD, Lu TB. Recent progress in neuromorphic and memory devices based on graphdiyne. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2023; 24:2196240. [PMID: 37090847 PMCID: PMC10116926 DOI: 10.1080/14686996.2023.2196240] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Revised: 03/20/2023] [Accepted: 03/24/2023] [Indexed: 05/03/2023]
Abstract
Graphdiyne (GDY) is an emerging two-dimensional carbon allotrope featuring a direct bandgap and fascinating physical and chemical properties, and it has demonstrated its promising potential in applications of catalysis, energy conversion and storage, electrical/optoelectronic devices, etc. In particular, the recent breakthrough in the synthesis of large-area, high-quality and ultrathin GDY films provides a feasible approach to developing high-performance electrical devices based on GDY. Recently, various GDY-based electrical and optoelectronic devices including multibit optoelectronic memories, ultrafast nonvolatile memories, artificial synapses and memristors have been proposed, in which GDY plays a crucial role. It is essential to summarize the recent breakthrough of GDY in device applications as a guidance, especially considering that the existing GDY-related reviews mainly focus on the applications in catalysis and energy-related fields. Herein, we review GDY-based novel memory and neuromorphic devices and their applications in neuromorphic computing and artificial visual systems. This review will provide an insight into the design and preparation of GDY-based devices and broaden the application fields of GDY.
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Affiliation(s)
- Zhi-Cheng Zhang
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics, Nankai University, Tianjin, China
| | - Xu-Dong Chen
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics, Nankai University, Tianjin, China
- MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Material Science and Engineering, Tianjin University of Technology, Tianjin, China
| | - Tong-Bu Lu
- MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Material Science and Engineering, Tianjin University of Technology, Tianjin, China
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6
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Wu Z, Liu P, Lin M, Zha S, Ni X. A Microwave Field-Induced Nonlinear Metamaterial with Wafer Integration Level. ACS APPLIED MATERIALS & INTERFACES 2023; 15:16189-16197. [PMID: 36921290 DOI: 10.1021/acsami.2c21964] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Field-induced nonlinear materials, with extended abilities of manipulating electromagnetic waves, have been widely employed in electromagnetic protection, absorption, and detection. Until now, it was found that the field-induced nonlinearity mainly shows in the optical and terahertz frequency bands. Applying the microwave band into such technical activities is hampered due to a lack of investigations on the nonlinearity caused by microwave electric fields, especially in the ultrawideband and microwave high-frequency bands. In this paper, a nonlinear metamaterial (NLMM) concept based on the integration of metamaterial structures and a semiconductor on the same wafer is proposed, which shows nonlinear behavior to the electromagnetics' field energy in the microwave band. The designed NLMM is transparent to low-density electromagnetic radiation fields, while it adaptively becomes opaque to high-density electromagnetic radiation fields. Two types of NLMM are designed to verify the nonlinear characteristics of ultrawide and narrow bands in the microwave band, respectively. The concept of NLMM can be used for the application of the microwave frequency band in electromagnetic protection and detection.
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Affiliation(s)
- Zhaofeng Wu
- College of Electronic Science, National University of Defense Technology, Changsha 410073, China
| | - Peiguo Liu
- College of Electronic Science, National University of Defense Technology, Changsha 410073, China
| | - Mingtuan Lin
- College of Electronic Science, National University of Defense Technology, Changsha 410073, China
| | - Song Zha
- College of Electronic Science, National University of Defense Technology, Changsha 410073, China
| | - Xiaocheng Ni
- College of Electronic Science, National University of Defense Technology, Changsha 410073, China
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7
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Zhao T, Guo J, Li T, Wang Z, Peng M, Zhong F, Chen Y, Yu Y, Xu T, Xie R, Gao P, Wang X, Hu W. Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives. Chem Soc Rev 2023; 52:1650-1671. [PMID: 36744507 DOI: 10.1039/d2cs00657j] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The fabrication of wafer-scale two-dimensional (2D) materials is a prerequisite and important step for their industrial applications. Chemical vapor deposition (CVD) is the most promising approach to produce high-quality films in a scalable way. Recent breakthroughs in the epitaxy of wafer-scale single-crystalline graphene, hexagonal boron nitride, and transition-metal dichalcogenides highlight the pivotal roles of substrate engineering by lattice orientation, surface steps, and energy considerations. This review focuses on the existing strategies and underlying mechanisms, and discusses future directions in epitaxial substrate engineering to deliver wafer-scale 2D materials for integrated electronics and photonics.
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Affiliation(s)
- Tiange Zhao
- School of Materials, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China. .,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Taotao Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Meng Peng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Fang Zhong
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Yiye Yu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Pingqi Gao
- School of Materials, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China.
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China. .,School of Integrated Circuits, Nanjing University, Suzhou, China.,Suzhou Laboratory, Suzhou, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
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8
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Wang J, Park JH, Lu AY, Kong J. Electrical Control of Chemical Vapor Deposition of Graphene. J Am Chem Soc 2022; 144:22925-22932. [DOI: 10.1021/jacs.2c08001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Affiliation(s)
- Jiangtao Wang
- Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Ji-Hoon Park
- Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Ang-Yu Lu
- Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Jing Kong
- Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
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9
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Ci H, Chen J, Ma H, Sun X, Jiang X, Liu K, Shan J, Lian X, Jiang B, Liu R, Liu B, Yang G, Yin W, Zhao W, Huang L, Gao T, Sun J, Liu Z. Transfer-Free Quasi-Suspended Graphene Grown on a Si Wafer. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206389. [PMID: 36208081 DOI: 10.1002/adma.202206389] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2022] [Revised: 09/27/2022] [Indexed: 06/16/2023]
Abstract
The direct growth of graphene affording wafer-scale uniformity on insulators is paramount to electronic and optoelectronic applications; however, it remains a challenge to date, because it entails an entirely different growth mode than that over metals. Herein, the metal-catalyst-free growth of quasi-suspended graphene on a Si wafer is demonstrated using an interface-decoupling chemical vapor deposition strategy. The employment of lower-than-conventional H2 dosage and concurrent introduction of methanol during growth can effectively weaken the interaction between the synthesized graphene and the underlying substrate. The growth mode can be thus fine-tuned, producing a predominantly monolayer graphene film with wafer-level homogeneity. Graphene thus grown on a 4 inch Si wafer enables the transfer-free fabrication of high-performance graphene-based field-effect transistor arrays that exhibit almost no shift in the charge neutral point, indicating a quasi-suspended feature of the graphene. Moreover, a carrier mobility up to 15 000 cm2 V-1 s-1 can be attained. This study is anticipated to offer meaningful insights into the synthesis of wafer-scale high-quality graphene on dielectrics for practical graphene devices.
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Affiliation(s)
- Haina Ci
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao, 266061, P. R. China
| | - Jingtao Chen
- National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Hao Ma
- School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao, 266580, P. R. China
| | - Xiaoli Sun
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Xingyu Jiang
- Institute of Functional Nano & Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Kaicong Liu
- National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jingyuan Shan
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Xueyu Lian
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
| | - Bei Jiang
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Ruojuan Liu
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Bingzhi Liu
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Guiqi Yang
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Wanjian Yin
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Wen Zhao
- School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao, 266580, P. R. China
| | - Lizhen Huang
- Institute of Functional Nano & Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Teng Gao
- National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jingyu Sun
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Zhongfan Liu
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
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10
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Dimitropoulos M, Trakakis G, Androulidakis C, Kotsidi M, Galiotis C. Wrinkle-mediated CVD synthesis of wafer scale Graphene/h-BN heterostructures. NANOTECHNOLOGY 2022; 34:025601. [PMID: 36215949 DOI: 10.1088/1361-6528/ac98d0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2022] [Accepted: 10/10/2022] [Indexed: 06/16/2023]
Abstract
The combination of two-dimensional materials (2D) into heterostructures enables their integration in tunable ultrathin devices. For applications in electronics and optoelectronics, direct growth of wafer-scale and vertically stacked graphene/hexagonal boron nitride (h-BN) heterostructures is vital. The fundamental problem, however, is the catalytically inert nature of h-BN substrates, which typically provide a low rate of carbon precursor breakdown and consequently a poor rate of graphene synthesis. Furthermore, out-of-plane deformations such as wrinkles are commonly seen in 2D materials grown by chemical vapor deposition (CVD). Herein, a wrinkle-facilitated route is developed for the fast growth of graphene/h-BN vertical heterostructures on Cu foils. The key advantage of this synthetic pathway is the exploitation of the increased reactivity from inevitable line defects arising from the CVD process, which can act as active sites for graphene nucleation. The resulted heterostructures are found to exhibit superlubric properties with increased bending stiffness, as well as directional electronic properties, as revealed from atomic force microscopy measurements. This work offers a brand-new route for the fast growth of Gr/h-BN heterostructures with practical scalability, thus propelling applications in electronics and nanomechanical systems.
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Affiliation(s)
- Marinos Dimitropoulos
- Department of Chemical Engineering, University of Patras, GR-26500 Patras, Greece
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - George Trakakis
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - Charalampos Androulidakis
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - Maria Kotsidi
- Department of Chemical Engineering, University of Patras, GR-26500 Patras, Greece
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - Costas Galiotis
- Department of Chemical Engineering, University of Patras, GR-26500 Patras, Greece
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
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11
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Shi Z, Ci H, Yang X, Liu Z, Sun J. Direct-Chemical Vapor Deposition-Enabled Graphene for Emerging Energy Storage: Versatility, Essentiality, and Possibility. ACS NANO 2022; 16:11646-11675. [PMID: 35926221 DOI: 10.1021/acsnano.2c05745] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The direct chemical vapor deposition (CVD) technique has stimulated an enormous scientific and industrial interest to enable the conformal growth of graphene over multifarious substrates, which readily bypasses tedious transfer procedure and empowers innovative materials paradigm. Compared to the prevailing graphene materials (i.e., reduced graphene oxide and liquid-phase exfoliated graphene), the direct-CVD-enabled graphene harnesses appealing structural advantages and physicochemical properties, accordingly playing a pivotal role in the realm of electrochemical energy storage. Despite conspicuous progress achieved in this frontier, a comprehensive overview is still lacking by far and the synthesis-structure-property-application nexus of direct-CVD-enabled graphene remains elusive. In this topical review, rather than simply compiling the state-of-the-art advancements, the versatile roles of direct-CVD-enabled graphene are itemized as (i) modificator, (ii) cultivator, (iii) defender, and (iv) decider. Furthermore, essential effects on the performance optimization are elucidated, with an emphasis on fundamental properties and underlying mechanisms. At the end, perspectives with respect to the material production and device fabrication are sketched, aiming to navigate the future development of direct-CVD-enabled graphene en-route toward pragmatic energy applications and beyond.
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Affiliation(s)
- Zixiong Shi
- College of Energy, Soochow Institute for Energy and Materials InnovationS, Light Industry Institute of Electrochemical Power Sources, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, P. R. China
| | - Haina Ci
- College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061, P. R. China
| | - Xianzhong Yang
- College of Energy, Soochow Institute for Energy and Materials InnovationS, Light Industry Institute of Electrochemical Power Sources, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, P. R. China
| | - Zhongfan Liu
- College of Energy, Soochow Institute for Energy and Materials InnovationS, Light Industry Institute of Electrochemical Power Sources, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
- Center for Nanochemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Jingyu Sun
- College of Energy, Soochow Institute for Energy and Materials InnovationS, Light Industry Institute of Electrochemical Power Sources, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, P. R. China
- Beijing Graphene Institute, Beijing 100095, P. R. China
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12
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Lu M, Ge Y, Wang J, Chen Z, Song Z, Xu J, Zhao Y. Ultrafast Growth of Highly Conductive Graphene Films by a Single Subsecond Pulse of Microwave. ACS NANO 2022; 16:6676-6686. [PMID: 35293217 DOI: 10.1021/acsnano.2c01183] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Currently, graphene films are expected to achieve real applications in various fields. However, the conventional synthesis methods still have intrinsic limitations, especially not being applicable on a surface with high curvature. Herein, an ultrafast synthesis method was developed for graphene and turbostratic graphite growth by a single subsecond pulse of microwaves generated by a household magnetron. We succeeded in growing high-quality around 10-layered turbostratic graphite in 0.16 s directly on the surface of an atomic force microscope probe and maintaining a tip curvature radius of less than 30 nm. The thus-produced probes showed high conductivity and tip durability. Moreover, turbostratic graphite film was also demonstrated to grow on the surface of dielectric Si flat substrates in a full coverage. Graphene can also grow on metallic Ni tips by this method. Our microwave ultrafast method can be used to grow high-quality graphene in a facile, efficient, and economical way.
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Affiliation(s)
- Mingming Lu
- CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Yifei Ge
- CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- School of Future Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiahao Wang
- CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Zixuan Chen
- The GBA National Institute for Nanotechnology Innovation, Guangzhou 510535, China
| | - Zhiwei Song
- CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Jianxun Xu
- CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- The GBA National Institute for Nanotechnology Innovation, Guangzhou 510535, China
| | - Yuliang Zhao
- CAS Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- The GBA National Institute for Nanotechnology Innovation, Guangzhou 510535, China
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13
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Han Q, Pang J, Li Y, Sun B, Ibarlucea B, Liu X, Gemming T, Cheng Q, Zhang S, Liu H, Wang J, Zhou W, Cuniberti G, Rümmeli MH. Graphene Biodevices for Early Disease Diagnosis Based on Biomarker Detection. ACS Sens 2021; 6:3841-3881. [PMID: 34696585 DOI: 10.1021/acssensors.1c01172] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The early diagnosis of diseases plays a vital role in healthcare and the extension of human life. Graphene-based biosensors have boosted the early diagnosis of diseases by detecting and monitoring related biomarkers, providing a better understanding of various physiological and pathological processes. They have generated tremendous interest, made significant advances, and offered promising application prospects. In this paper, we discuss the background of graphene and biosensors, including the properties and functionalization of graphene and biosensors. Second, the significant technologies adopted by biosensors are discussed, such as field-effect transistors and electrochemical and optical methods. Subsequently, we highlight biosensors for detecting various biomarkers, including ions, small molecules, macromolecules, viruses, bacteria, and living human cells. Finally, the opportunities and challenges of graphene-based biosensors and related broad research interests are discussed.
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Affiliation(s)
- Qingfang Han
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
- School of Biological Science and Technology, University of Jinan, 336 West Road of Nan Xinzhuang, Jinan 250022, Shandong, China
| | - Jinbo Pang
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
| | - Yufen Li
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
| | - Baojun Sun
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
- School of Biological Science and Technology, University of Jinan, 336 West Road of Nan Xinzhuang, Jinan 250022, Shandong, China
| | - Bergoi Ibarlucea
- Dresden Center for Computational Materials Science, Technische Universität Dresden, Dresden 01062, Germany
- Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, Dresden 01062, Germany
| | - Xiaoyan Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
| | - Thomas Gemming
- Leibniz Institute for Solid State and Materials Research Dresden, Dresden D-01171, Germany
| | - Qilin Cheng
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
| | - Shu Zhang
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
| | - Hong Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
- State Key Laboratory of Crystal Materials, Center of Bio & Micro/Nano Functional Materials, Shandong University, 27 Shandanan Road, Jinan 250100, China
| | - Jingang Wang
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
| | - Weijia Zhou
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, Shandong, China
| | - Gianaurelio Cuniberti
- Dresden Center for Computational Materials Science, Technische Universität Dresden, Dresden 01062, Germany
- Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, Dresden 01062, Germany
- Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, Dresden 01069, Germany
- Center for Advancing Electronics Dresden, Technische Universität Dresden, Dresden 01069, Germany
| | - Mark H. Rümmeli
- Leibniz Institute for Solid State and Materials Research Dresden, Dresden D-01171, Germany
- College of Energy, Soochow, Institute for Energy and Materials Innovations, Soochow University, Suzhou 215006, China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie Sklodowskiej 34, Zabrze 41-819, Poland
- Institute of Environmental Technology (CEET), VŠB-Technical University of Ostrava, 17. Listopadu 15, Ostrava 708 33, Czech Republic
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14
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Basak S, Packirisamy G. Graphene‐Based Nanomaterials for Biomedical, Catalytic, and Energy Applications. ChemistrySelect 2021. [DOI: 10.1002/slct.202101975] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Affiliation(s)
- Soumyadeep Basak
- Department of Biosciences and Bioengineering Indian Institute of Technology Roorkee Roorkee 247667 Uttarakhand India
| | - Gopinath Packirisamy
- Nanobiotechnology Laboratory Centre for Nanotechnology Indian Institute of Technology Roorkee Roorkee 247667 Uttarakhand India
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