Ultrasensitive Photodetectors Promoted by Interfacial Charge Transfer from Layered Perovskites to Chemical Vapor Deposition-Grown MoS2

Enhanced Photodetection Performance of an In Situ Core/Shell Perovskite-MoS2 Phototransistor

While two-dimensional transition metal dichalcogenides (TMDCs)-based photodetectors offer prospects for high integration density and flexibility, their thinness poses a challenge regarding low light absorption, impacting photodetection sensitivity. Although the integration of TMDCs with metal halide perovskite nanocrystals (PNCs) has been known to be promising for photodetection with a high absorption coefficient of PNCs, the low charge mobility of PNCs delays efficient photocarrier injection into TMDCs. In this study, we integrated MoS2 with in situ formed core/shell PNCs with short ligands that minimize surface defects and enhance photocarrier injection. The PNCs/MoS2 heterostructure efficiently separates electrons and holes by establishing type II band alignment and consequently inducing a photogating effect. The synergistic interplay between photoconductive and photogating effects yields a high responsivity of 2.2 × 106 A/W and a specific detectivity of 9.0 × 1011 Jones. Our findings offer a promising pathway for developing low-cost, high-performance phototransistors leveraging the advantages of two-dimensional (2D) materials.

Zero Dimensional-Two Dimensional Hybrid Photodetectors Using Multilayer MoS2 and Lead Halide Perovskite Quantum Dots with a Tunable Bandgap

We report high-performance 0D-2D hybrid photodetectors integrated with tunable band gap perovskite (CsPbI₃, Cs_XFA_X-1PbI₃, and FAPbI₃) quantum dots and MOCVD-grown bilayer MoS₂. In our hybrid structure, the lead halide PQDs can be utilized as an absorbing layer of light of specific wavelengths and transfer the photogenerated carriers to the MoS₂ transport layer. With tunable wavelength lead halide PQDs, the 0D-2D hybrid photodetector shows a high responsivity up to 10⁷ AW^-1 and high specific detectivity exceeding 10¹³ Jones due to the difference in the built-in potential between PQDs and multilayer MoS₂ layers. This work proposes the possibility of fabricating high-performance photodetectors by hybridizing PQDs of various band gaps with 2D materials.

2D Ruddlesden-Popper perovskite sensitized SnP2S6 ultraviolet photodetector enabling high responsivity and fast speed

As the newly developed wide-bandgap semiconductors, two-dimensional layered metal phosphorus chalcogenides (2D LMPCs) exhibit enormous potential applications in ultraviolet (UV) photodetection due to their superior optoelectronic performance. However, 2D LMPC-based UV photodetectors generally suffer from low responsivity and slow response speed, which hinder their practical applications. Here, we present an effective strategy of sensitizing 2D LMPC UV photodetectors with a 2D Ruddlesden-Popper (RP) perovskite to enable high responsivity and fast response speed. As a demonstration, a hybrid heterojunction composed of RP perovskite (PEA)₂PbI₄ and a 2D SnP₂S₆ flake is fabricated by spin-coating method. Benefitting from the strong optical absorption of (PEA)₂PbI₄ and the efficient interfacial charge transfer caused by the favorable type-II energy band alignment, the as-fabricated 2D SnP₂S₆/(PEA)₂PbI₄ hybrid heterojunction photodetectors show high responsivity (67.1 A W^-1), large detectivity (2.8 × 10¹¹ Jones), fast rise/delay time (30/120 μs) and excellent external quantum efficiency (22825%) at 365 nm. Under field-effect modulation, the responsivity of the heterojunction photodetector can reach up to 239.4 A W^-1, which is attributed to the photogating mechanism and reduced Schottky barriers. Owing to the excellent photodetection performance, the heterojunction device further shows superior imaging capability. This work provides an effective strategy for designing high-performance UV photodetectors toward future applications.

Pattern-Selective Molecular Epitaxial Growth of Single-Crystalline Perovskite Arrays toward Ultrasensitive and Ultrafast Photodetector

The emergence of organic-inorganic perovskite has provided great flexibility for creating optoelectronic devices with unprecedented performance or unique functionality. However, the perovskite films explored so far have been difficult to be patterned to arrays owing to their poor solvent and moisture stability, which usually lead to serious structural damage of perovskites. The successful preparation of perovskite microarrays with uniform shape and size is more challenging. Here we report a straightforward approach to realize single-crystalline perovskite arrays through a relatively simple pattern-selective molecular epitaxial growth. This approach is applied to create diverse shaped perovskite arrays, such as hexagon, triangle, circle, square, and rectangle. A vertically aligned perovskite photodetector displays both an ultrasensitive and ultrafast photoresponse arising from the reduction in carrier diffusion paths and the high optical absorption. This work demonstrates a general approach to creating perovskite arrays with uniform shape, size, and morphology and provides a rich platform for producing high-performance photodetectors and photovoltage devices.

Engineering sensitivity and spectral range of photodetection in van der Waals materials and hybrids

Exploration of van der Waals heterostructures in the field of optoelectronics has produced photodetectors with very high bandwidth as well as ultra-high sensitivity. Appropriate engineering of these heterostructures allows us to exploit multiple light-to-electricity conversion mechanisms, ranging from photovoltaic, photoconductive to photogating processes. These mechanisms manifest in different sensitivity and speed of photoresponse. In addition, integrating graphene-based hybrid structures with photonic platforms provides a high gain-bandwidth product, with bandwidths ≫1 GHz. In this review, we discuss the progression in the field of photodetection in 2D hybrids. We emphasize the physical mechanisms at play in diverse architectures and discuss the origin of enhanced photoresponse in hybrids. Recent developments in 2D photodetectors based on room temperature detection, photon-counting ability, integration with Si and other pressing issues, that need to be addressed for these materials to be integrated with industrial standards have been discussed.

Charge transfer excitons in unfunctionalized graphite-wrapped MAPbBr3 nanocrystal composites with different morphologies

Charge transfer from perovskite nanocrystals to graphite sheets.

Layer-by-Layer Growth of AA-Stacking MoS2 for Tunable Broadband Phototransistors

The stacking configuration has been considered as an important additional degree of freedom to tune the physical property of layered materials, such as superconductivity and interlayer excitons. However, the facile growth of highly uniform stacking configuration is still a challenge. Herein, the AA-stacking MoS₂ domains with a ratio up to 99.5% has been grown by using the modified chemical vapor deposition through introducing NaCl molecules in the confined space. By tuning the growth time, MoS₂ domains would transit from an AA-stacking bilayer to an AAAAA-stacking five-layer. The epitaxial growth mechanism has been insightfully studied, revealing that the critical nucleation size of the AA-stacking bilayer is 5.0 ± 3.0 μm. Through investigation of the photoluminescence, the photoemission, especially the indirect photoexcitation, is dependent on both the stacking fashion and layer number. Furthermore, by studying the gate-tuned MoS₂ phototransistors, we found a significant dependence on the stacking configuration of MoS₂ of the photoexcitation and a different gate tunable photoresponse. The AAA-stacking trilayer MoS₂ phototransistor delivers a photoresponse of 978.14 A W^-1 at 550 nm. By correction of the external quantum efficiency with external field and illumination power density, it has been found that the photoresponse tunability is dependent on the layer number due to the strong photogating effect. This strategy provides a general avenue for the epitaxial growth of van der Waals film which will further facilitate the applications in a tunable photodetector.