Emerging Phases of Layered Metal Chalcogenides

Target-induced enzymatic cleavage cycle amplification reaction-gated organic photoelectrochemical transistor biosensor for rapid detection of okadaic acid

Okadaic acid (OA), a predominant toxic entity in Diarrhetic Shellfish Poisoning (DSP), carries substantial significance for both marine ecosystems and human well-being. The nascent organic photoelectrochemical transistor (OPECT) biosensor has emerged as a promising biometric methodology, poised to offer a fresh realm for the detection of marine biotoxins. In this work, a biosensor utilizing signal amplification based on Cd0.5Zn0.5S/ZnIn2S4 quantum dots (CZS/ZIS QDs) in OPECT was proposed for OA detection, where ZIS QDs were labeled on aptamer and a substantial quantity of QDs were generated via cyclic shearing facilitated through target-induced Exo I enzyme. Owing to the sensitizing influence of ZIS QDs on CZS, the photoelectric conversion efficiency was augmented, culminating in a notable anodic photocurrent upon exposure to light, thereby inducing a transformation in the channel state of the polymer poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) and consequently producing a remarkable modification in the channel current. The detection limit of the biosensor as low as 12.5 pM and a superior stability and specificity was confirmed, which also showed commendable outcomes in actual samples testing. Consequently, this study not only introduces a novel pathway for swift OA detection, but unveils a novel perspective for future expedited and convenient on-site detection of marine biotoxins.

Superconductivity in a van der Waals layered quasicrystal

Van der Waals layered transition-metal chalcogenides are drawing significant attention owing to their intriguing physical properties. This group of materials consists of abundant members with various elements, having a variety of different structures. However, they are all crystalline materials, and the physical properties of van der Waals layered quasicrystals have never been studied to date. Here, we report on the discovery of superconductivity in a van der Waals layered quasicrystal of Ta1.6Te. The electrical resistivity, magnetic susceptibility, and specific heat of the quasicrystal unambiguously validate the occurrence of bulk superconductivity at a transition temperature of ~1 K. This discovery can promote new research on assessing the physical properties of novel van der Waals layered quasicrystals as well as two-dimensional quasicrystals; moreover, it paves the way toward new frontiers of superconductivity in thermodynamically stable quasicrystals.

A Universal Strategy for Synthesis of 2D Ternary Transition Metal Phosphorous Chalcogenides

The 2D ternary transition metal phosphorous chalcogenides (TMPCs) have attracted extensive research interest due to their widely tunable band gap, rich electronic properties, inherent magnetic and ferroelectric properties. However, the synthesis of TMPCs via chemical vapor deposition (CVD) is still challenging since it is difficult to control reactions among multi-precursors. Here, a subtractive element growth mechanism is proposed to controllably synthesize the TMPCs. Based on the growth mechanism, the TMPCs including FePS3 , FePSe3 , MnPS3 , MnPSe3 , CdPS3 , CdPSe3 , In2 P3 S9 , and SnPS3 are achieved successfully and further confirmed by Raman, second-harmonic generation (SHG), and scanning transmission electron microscopy (STEM). The typical TMPCs-SnPS3 shows a strong SHG signal at 1064 nm, with an effective nonlinear susceptibility χ(2) of 8.41 × 10-11  m V-1 , which is about 8 times of that in MoS2 . And the photodetector based on CdPSe3 exhibits superior detection performances with responsivity of 582 mA W-1 , high detectivity of 3.19 × 1011  Jones, and fast rise time of 611 µs, which is better than most previously reported TMPCs-based photodetectors. These results demonstrate the high quality of TMPCs and promote the exploration of the optical properties of 2D TMPCs for their applications in optoelectronics.

Modelling the structural disorder in trigonal-prismatic coordinated transition metal dichalcogenides

The structural disorder in trigonal-prismatic coordinated transition metal layered dichalcogenides is investigated. The structural model taking into account stacking faults, correlated displacement of atoms and average crystallite size is assessed by fitting to the X-ray diffraction pattern of an exfoliated–restacked MoS₂ sample.

Trigonal-prismatic coordinated transition metal dichalcogenides (TMDCs) are formed from stacked (chalcogen)–(transition metal)–(chalcogen) triple layers, where the chemical bond is covalent within the triple layers and van der Waals (vdW) forces are effective between the layers. Bonding is at the origin of the great interest in these compounds, which are used as 2D materials in applications such as catalysis, electronics, photoelectronics, sensors, batteries and thermoelectricity. This paper addresses the issue of modelling the structural disorder in multilayer TMDCs. The structural model takes into account stacking faults, correlated displacement of atoms and average crystallite size/shape, and is assessed by simulation of the X-ray diffraction pattern and fitting to the experimental data relative to a powdered sample of MoS₂ exfoliated and restacked via lithiation. From fitting, an average crystallite size of about 50 Å, nearly spherical crystallites and a definite probability of deviation from the fully eclipsed atomic arrangement present in the ordered structure are determined. The increased interlayer distance and correlated intralayer and interlayer atomic displacement are attributed to the presence of lithium intercalated in the vdW gap between triple layers (Li/Mo molar ratio of about 0.06). The model holds for the whole class of trigonal-prismatic coordinated TMDCs, and is suitably flexible to take into account different preparation routes.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Atomistic Observation of the Local Phase Transition in MoTe2 for Application in Homojunction Photodetectors

Direct atomic-scale observation of the local phase transition in transition metal dichalcogenides (TMDCs) is critically required to carry out in-depth studies of their atomic structures and electronic features. However, the structural aspects including crystal symmetries tend to be unclear and unintuitive in real-time monitoring of the phase transition process. Herein, by using in situ transmission electron microscopy, information about the phase transition mechanism of MoTe₂ from hexagonal structure (2H phase) to monoclinic structure (1T' phase) driven by sublimation of Te atoms after a spike annealing is obtained directly. Furthermore, with the control of Te atom sublimation by modulating the hexagonal boron nitride (h-BN) coverage in the desired area, the lateral 1T'-enriched MoTe₂ /2H MoTe₂ homojunction can be one-step constructed via an annealing treatment. Owing to the gradient bandgap provided by 1T'-enriched MoTe₂ and 2H MoTe₂ , the photodetector composed of the 1T'-enriched MoTe₂ /2H MoTe₂ homojunction shows fast photoresponse and ten times larger photocurrents than that consisting of a pure 2H MoTe₂ channel. The study reveals a route to improve the performance of optoelectronic and electronic devices based on TMDCs with both semiconducting and semimetallic phases.