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Yue Y, Chai N, Li M, Zeng Z, Li S, Chen X, Zhou J, Wang H, Wang X. Ultrafast Photoexcitation Induced Passivation for Quasi-2D Perovskite Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2407347. [PMID: 38857569 DOI: 10.1002/adma.202407347] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2024] [Indexed: 06/12/2024]
Abstract
Quasi-2D perovskites exhibit great potential in photodetectors due to their exceptional optoelectronic responsivity and stability, compared to their 3D counterparts. However, the defects are detrimental to the responsivity, response speed, and stability of perovskite photodetectors. Herein, an ultrafast photoexcitation-induced passivation technique is proposed to synergistically reduce the dimensionality at the surface and induce oxygen doping in the bulk, via tuning the photoexcitation intensity. At the optimal photoexcitation level, the excited electrons and holes generate stretching force on the Pb─I bonds at the interlayered [PbI6]-, resulting in low dimensional perovskite formation, and the absorptive oxygen is combined with I vacancies at the same time. These two induced processes synergistically boost the carrier transport and interface contact performance. The most outstanding device exhibits a fast response speed with rise/decay time of 201/627 ns, with a peak responsivity/detectivity of 163 mA W-1/4.52 × 1010 Jones at 325 nm and the enhanced cycling stability. This work suggests the possibility of a new passivation technique for high performance 2D perovskite optoelectronics.
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Affiliation(s)
- Yunfan Yue
- Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China
- Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory, Foshan, 528216, P. R. China
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - NianYao Chai
- Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Mingyu Li
- School of Science, Wuhan University of Technology, Wuhan, Hubei, 430070, China
| | - Zhongle Zeng
- Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Sheng Li
- Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Xiangyu Chen
- Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Jiakang Zhou
- Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Huan Wang
- Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Xuewen Wang
- Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China
- Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory, Foshan, 528216, P. R. China
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
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2
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Cao F, Liu Y, Liu M, Han Z, Xu X, Fan Q, Sun B. Wide Bandgap Semiconductors for Ultraviolet Photodetectors: Approaches, Applications, and Prospects. RESEARCH (WASHINGTON, D.C.) 2024; 7:0385. [PMID: 38803505 PMCID: PMC11128649 DOI: 10.34133/research.0385] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/20/2024] [Accepted: 04/21/2024] [Indexed: 05/29/2024]
Abstract
Ultraviolet (UV) light, invisible to the human eye, possesses both benefits and risks. To harness its potential, UV photodetectors (PDs) have been engineered. These devices can convert UV photons into detectable signals, such as electrical impulses or visible light, enabling their application in diverse fields like environmental monitoring, healthcare, and aerospace. Wide bandgap semiconductors, with their high-efficiency UV light absorption and stable opto-electronic properties, stand out as ideal materials for UV PDs. This review comprehensively summarizes recent advancements in both traditional and emerging wide bandgap-based UV PDs, highlighting their roles in UV imaging, communication, and alarming. Moreover, it examines methods employed to enhance UV PD performance, delving into the advantages, challenges, and future research prospects in this area. By doing so, this review aims to spark innovation and guide the future development and application of UV PDs.
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Affiliation(s)
- Fa Cao
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Ying Liu
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Mei Liu
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Zeyao Han
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Xiaobao Xu
- School of Electronic Science and Engineering,
Southeast University, Nanjing 210000, P. R. China
| | - Quli Fan
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Bin Sun
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
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3
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Chen M, Zhang T, Elsukova A, Hu Z, Zhang R, Wang Y, Liu X, Liu X, Gao F. Kinetically Controlled Synthesis of Quasi-Square CsPbI 3 Nanoplatelets with Excellent Stability. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306360. [PMID: 38010121 DOI: 10.1002/smll.202306360] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2023] [Revised: 10/17/2023] [Indexed: 11/29/2023]
Abstract
Nanoplatelets (NPLs) share excellent luminescent properties with their symmetric quantum dots counterparts and entail special characters benefiting from the shape, like the thickness-dependent bandgap and anisotropic luminescence. However, perovskite NPLs, especially those based on iodide, suffer from poor spectral and phase stability. Here, stable CsPbI3 NPLs obtained by accelerating the crystallization process in ambient-condition synthesis are reported. By this kinetic control, the rectangular NPLs into quasi-square NPLs are tuned, where enlarged width endows the NPLs with a lower surface-area-to-volume ratio (S/V ratio), leading to lower surficial energy and thus improved endurance against NPL fusion (cause for spectral shift or phase transformation). The accelerated crystallization, denoting the fast nucleation and short period of growth in this report, is enabled by preparing a precursor with complete transformation of PbI2 into intermediates (PbI3 -), through an additional iodide supplier (e.g., zinc iodide). The excellent color stability of the materials remains in the light-emitting diodes under various bias stresses.
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Affiliation(s)
- Mengyun Chen
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, 58183, Sweden
| | - Tiankai Zhang
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, 58183, Sweden
| | - Anna Elsukova
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, 58183, Sweden
| | - Zhangjun Hu
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, 58183, Sweden
| | - Rui Zhang
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, 58183, Sweden
| | - Yonghong Wang
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, 58183, Sweden
| | - Xianjie Liu
- Laboratory of Organic Electronics (LOE), Department of Science and Technology, Linköping University, Norrköping, 60174, Sweden
| | - Xiaoke Liu
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, 58183, Sweden
| | - Feng Gao
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, 58183, Sweden
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4
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Sun X, Wu M, Yu X, Li Q, Xiao G, Wang K, Zou B. Intense Broadband Emission in the Unconventional 3D Hybrid Metal Halide via High-Pressure Engineering. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2306937. [PMID: 38143277 PMCID: PMC10933603 DOI: 10.1002/advs.202306937] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2023] [Revised: 11/15/2023] [Indexed: 12/26/2023]
Abstract
Developing hybrid metal halides with self-trapped exciton (STE) emission is a powerful and promising approach to achieve single-component phosphors for wide-color-gamut display and illumination. Nevertheless, it is difficult to generate STEs and broadband emission in the classical and widely used 3D systems, owing to the great structural connectivity of metal-halogen networks. Here, high pressure is implemented to achieve dual emission and dramatical emission enhancement in 3D metal halide of [Pb3 Br4 ][O2 C(CH2 )2 CO2 ]. The pressure-induced new emission is ascribed to the radiation recombination of STEs from the Pb2 Br2 O2 tetrahedra with the promoted distortion through the isostructural phase transition. Furthermore, the wide range of emission chromaticity can be regulated by controlling the distortion order of different polyhedral units upon compression. This work not only constructs the relationship between structure and optical behavior of [Pb3 Br4 ][O2 C(CH2 )2 CO2 ], but also provides new strategies for optimizing broadband emission toward potential applications in solid-state lighting.
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Affiliation(s)
- Xuening Sun
- State Key Laboratory of Superhard MaterialsCollege of PhysicsJilin UniversityChangchun130012China
| | - Min Wu
- Shandong Key Laboratory of Optical Communication Science and TechnologySchool of Physics Science and Information TechnologyLiaocheng UniversityLiaocheng252000China
| | - Xihan Yu
- State Key Laboratory of Superhard MaterialsCollege of PhysicsJilin UniversityChangchun130012China
| | - Qian Li
- Shandong Key Laboratory of Optical Communication Science and TechnologySchool of Physics Science and Information TechnologyLiaocheng UniversityLiaocheng252000China
| | - Guanjun Xiao
- State Key Laboratory of Superhard MaterialsCollege of PhysicsJilin UniversityChangchun130012China
| | - Kai Wang
- Shandong Key Laboratory of Optical Communication Science and TechnologySchool of Physics Science and Information TechnologyLiaocheng UniversityLiaocheng252000China
| | - Bo Zou
- State Key Laboratory of Superhard MaterialsCollege of PhysicsJilin UniversityChangchun130012China
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5
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Kim J, Lee J, Lee JM, Facchetti A, Marks TJ, Park SK. Recent Advances in Low-Dimensional Nanomaterials for Photodetectors. SMALL METHODS 2024; 8:e2300246. [PMID: 37203281 DOI: 10.1002/smtd.202300246] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2023] [Revised: 04/21/2023] [Indexed: 05/20/2023]
Abstract
New emerging low-dimensional such as 0D, 1D, and 2D nanomaterials have attracted tremendous research interests in various fields of state-of-the-art electronics, optoelectronics, and photonic applications due to their unique structural features and associated electronic, mechanical, and optical properties as well as high-throughput fabrication for large-area and low-cost production and integration. Particularly, photodetectors which transform light to electrical signals are one of the key components in modern optical communication and developed imaging technologies for whole application spectrum in the daily lives, including X-rays and ultraviolet biomedical imaging, visible light camera, and infrared night vision and spectroscopy. Today, diverse photodetector technologies are growing in terms of functionality and performance beyond the conventional silicon semiconductor, and low-dimensional nanomaterials have been demonstrated as promising potential platforms. In this review, the current states of progress on the development of these nanomaterials and their applications in the field of photodetectors are summarized. From the elemental combination for material design and lattice structure to the essential investigations of hybrid device architectures, various devices and recent developments including wearable photodetectors and neuromorphic applications are fully introduced. Finally, the future perspectives and challenges of the low-dimensional nanomaterials based photodetectors are also discussed.
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Affiliation(s)
- Jaehyun Kim
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Junho Lee
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
| | - Jong-Min Lee
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
| | - Antonio Facchetti
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Tobin J Marks
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Sung Kyu Park
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
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Hu L, Li X, Guo X, Xu M, Shi Y, Herve NB, Xiang R, Zhang Q. Electret Modulation Strategy to Enhance the Photosensitivity Performance of Two-Dimensional Molybdenum Sulfide. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59704-59713. [PMID: 38087993 DOI: 10.1021/acsami.3c14836] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Due to the limited light absorption efficiency of atomic thickness layers and the existence of quenching effects, photodetectors solely made of transition metal dichalcogenides (TMDs) have exhibited an unsatisfactory detection performance. In this article, electret/TMD hybridized devices were proposed by vertically coupling a MoS2 channel and the PTFE film, which reveals an optimized photodetection behavior. Negative charges were generated in the PTFE layer through the corona charging method, akin to applying a negative bias on the MoS2 channel in lieu of a traditional voltage-driven back gate. Under a charging voltage of -6 kV, PTFE/MoS2 devices reveal improved photodetection performance (Rhybrid = 67.95A/W versus Ronly = 3.37 A/W, at 470 nm, 1.20 mW cm-2) and faster recovery speed (τd(hybrid) = 2000 ms versus τd(only) = 2900 ms) compared to those bare MoS2 counterparts. The optimal detection performance (2 orders of magnitude) was obtained when the charging voltage was -2 kV, limited by the minimum of the carrier density in MoS2 channels. This study provides an alternative strategy to optimize optoelectronic devices based on the 2D components through non-voltage-driven gating.
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Affiliation(s)
- Lian Hu
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Xin Li
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Xinyu Guo
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Minxuan Xu
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Yueqin Shi
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Nduwarugira B Herve
- School of Mechanical Engineering, Zhejiang University, Hangzhou 310003, China
| | - Rong Xiang
- School of Mechanical Engineering, Zhejiang University, Hangzhou 310003, China
| | - Qi Zhang
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
- School of Mechanical Engineering, Zhejiang University, Hangzhou 310003, China
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7
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Ou K, Wang Y, Zhang W, Tang Y, Ni Y, Xia Y, Wang H. Highly Sensitive H 2S Gas Sensor Based on a Lead-Free CsCu 2I 3 Perovskite Film at Room Temperature. ACS OMEGA 2023; 8:48326-48335. [PMID: 38144075 PMCID: PMC10733916 DOI: 10.1021/acsomega.3c07694] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Revised: 11/21/2023] [Accepted: 11/28/2023] [Indexed: 12/26/2023]
Abstract
Recently, there have been reports of lead halide perovskite-based sensors demonstrating their potential for gas sensing applications. However, the toxicity of lead and the instability of lead-based perovskites have limited their applications. This study addressed this issue by developing a H2S gas sensor based on a lead-free CsCu2I3 film prepared using a one-step CVD method. The sensor demonstrated excellent sensing properties, including a high response and selectivity toward H2S, even at low concentrations (0.2 ppm) at room temperature. Furthermore, a reasonable sensing mechanism was proposed. It is suggested that the sensing mechanism sheds light on the role of defects in perovskite materials, the impact of H2S as an electron donor, and the occurrence of reversible chemical reactions. These findings suggest that lead-free CsCu2I3 has great potential in the field of H2S gas sensing.
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Affiliation(s)
- Kai Ou
- School of Physical Science
and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Yue Wang
- School of Physical Science
and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Wenting Zhang
- School of Physical Science
and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Yongliang Tang
- School of Physical Science
and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Yuxiang Ni
- School of Physical Science
and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Yudong Xia
- School of Physical Science
and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Hongyan Wang
- School of Physical Science
and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
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Ma Z, Ji X, Lin S, Chen X, Wu D, Li X, Zhang Y, Shan C, Shi Z, Fang X. Recent Advances and Opportunities of Eco-Friendly Ternary Copper Halides: A New Superstar in Optoelectronic Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300731. [PMID: 36854310 DOI: 10.1002/adma.202300731] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/24/2023] [Revised: 02/19/2023] [Indexed: 06/18/2023]
Abstract
Recently, the newly-emerging lead-free metal-halide materials with less toxicity and superior optoelectronic properties have received wide attention as the safer and potentially more robust alternatives to lead-based perovskite counterparts. Among them, ternary copper halides (TCHs) have become a vital group due to their unique features, including abundant structural diversity, ease of synthesis, unprecedented optoelectronic properties, high abundance, and low cost. Although the recent efforts in this field have made certain progresses, some scientific and technological issues still remain unresolved. Herein, a comprehensive and up-to-date overview of recent progress on the fundamental characteristics of TCH materials and their versatile applications is presented, which contains topics such as: i) crystal and electronic structure features and synthesis strategies; ii) mechanisms of self-trapped excitons, luminescence regulation, and environmental stability; and iii) their burgeoning optoelectronic devices of phosphor-converted white light-emitting diodes (WLEDs), electroluminescent LEDs, anti-counterfeiting, X-ray scintillators, photodetectors, sensors, and memristors. Finally, the current challenges together with future perspectives on the development of TCH materials and applications are also critically described, which is considered to be critical for accelerating the commercialization of these rapidly evolving technologies.
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Affiliation(s)
- Zhuangzhuang Ma
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xinzhen Ji
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Shuailing Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xu Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Yu Zhang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Chongxin Shan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Institute of Optoelectronics, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, P. R. China
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Ghosh S, Patel M, Lee J, Kim J. All-Oxide Transparent Photodetector Array for Ultrafast Response through Self-Powered Excitonic Photovoltage Operation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301702. [PMID: 37096932 DOI: 10.1002/smll.202301702] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2023] [Revised: 03/26/2023] [Indexed: 05/03/2023]
Abstract
Can photodetectors be transparent and operate in self-powered mode? Is it possible to achieve invisible electronics, independent of the external power supply system, for on-site applications? Here, a ZnO/NiO heterojunction-based high-functional transparent ultraviolet (UV) photodetector operating in the self-powered photovoltaic mode with outstanding responsivity and detectivity values of 6.9 A W-1 and 8.0 × 1012 Jones, respectively, is reported. The highest IUV /Idark value of 8.9 × 104 is attained at a wavelength of 385 nm, together with a very small dark current value of 9.15 × 10-12 A. A large-scale sputtering method is adopted to deposit the heterostructure of n-ZnO and p-NiO sequentially. This deposition instinctively forms an abrupt junction, resulting in a high-quality heterojunction device. Moreover, developing a ZnO/NiO-heterojunction-based 4 × 5 matrix array with an output photovoltage of 4.5 V is preferred for integrating photodetectors into sensing and imaging systems. This transparent UV photodetector exhibits the fastest photo-response time (83 ns) reported for array configurations, which is achieved using an exciton-induced photovoltage based on a neutral donor-bound exciton. Overall, this study provides a simple method for achieving a high-performance large-scale transparent UV photodetector with a self-powered array configuration.
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Affiliation(s)
- Shuvaraj Ghosh
- Photoelectric and Energy Device Application Lab (PEDAL) and Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, Incheon, 22012, South Korea
- Department of Electrical Engineering, Incheon National University, Incheon, 22012, South Korea
| | - Malkeshkumar Patel
- Photoelectric and Energy Device Application Lab (PEDAL) and Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, Incheon, 22012, South Korea
- Department of Electrical Engineering, Incheon National University, Incheon, 22012, South Korea
| | - Junsik Lee
- Photoelectric and Energy Device Application Lab (PEDAL) and Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, Incheon, 22012, South Korea
- Department of Electrical Engineering, Incheon National University, Incheon, 22012, South Korea
| | - Joondong Kim
- Photoelectric and Energy Device Application Lab (PEDAL) and Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon National University, Incheon, 22012, South Korea
- Department of Electrical Engineering, Incheon National University, Incheon, 22012, South Korea
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10
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Lu H, Wu W, He Z, Han X, Pan C. Recent progress in construction methods and applications of perovskite photodetector arrays. NANOSCALE HORIZONS 2023; 8:1014-1033. [PMID: 37337833 DOI: 10.1039/d3nh00119a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2023]
Abstract
Metal halide perovskites are considered promising materials for next-generation optoelectronic devices due to their excellent optoelectronic performances and simple solution preparation process. Precise micro/nano-scale patterning techniques enable perovskite materials to be used for array integration of photodetectors. In this review, the device types of perovskite-based photodetectors are introduced and the structural characteristics and corresponding device performances are analyzed. Then, the typical construction methods suitable for the fabrication of perovskite photodetector arrays are highlighted, including surface treatment technology, template-assisted construction, inkjet printing technology, and modified photolithography. Furthermore, the current development trends and their applications in image sensing of perovskite photodetector arrays are summarized. Finally, major challenges are presented to guide the development of perovskite photodetector arrays.
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Affiliation(s)
- Hui Lu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, P. R. China.
| | - Wenqiang Wu
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Zeping He
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, P. R. China.
| | - Xun Han
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 311200, China.
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, P. R. China.
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11
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Tsuji M, Sasase M, Iimura S, Kim J, Hosono H. Room-Temperature Solid-State Synthesis of Cs 3Cu 2I 5 Thin Films and Formation Mechanism for Its Unique Local Structure. J Am Chem Soc 2023; 145:11650-11658. [PMID: 37192284 DOI: 10.1021/jacs.3c01713] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/18/2023]
Abstract
Blue-emitting Cs3Cu2I5 has attracted attention owing to its near-unity PL quantum yield and applications in DUV photodetectors and scintillators. Its PL properties originate from the unique local structure around the luminescent center, the [Cu2I5]3- polyhedron iodocuprate anion consisting of the edge-shared CuI3 triangle and the CuI4 tetrahedron dimer, which is isolated by Cs+ ions. We found that solid-state reactions between CsI and CuI occur near room temperature (RT) to form Cs3Cu2I5 and/or CsCu2I3 phases. High-quality thin films of these phases were obtained by the sequential deposition of CuI and CsI by thermal evaporation. We elucidated that the formation of interstitial Cu+ and the antisite of I- at the Cs+ site in the CsI crystal through Cu+ and I- diffusion results in the RT synthesis of Cs3Cu2I5. The unique structure formation of the luminescent center was revealed using a model based on the low packing density of the CsCl-type crystal structure, similar sizes of Cs+ and I- ions, and the high diffusivity of Cu+. The self-aligned patterning of the luminous regions on thin films was demonstrated.
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Affiliation(s)
- Masatake Tsuji
- MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, Yokohama 226-8503, Japan
| | - Masato Sasase
- MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, Yokohama 226-8503, Japan
| | - Soshi Iimura
- MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, Yokohama 226-8503, Japan
- National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
- Precursory Research for Embryonic Science and Technology (PRESTO), Kawaguchi, Saitama 332-0012, Japan
| | - Junghwan Kim
- MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, Yokohama 226-8503, Japan
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
- Precursory Research for Embryonic Science and Technology (PRESTO), Kawaguchi, Saitama 332-0012, Japan
| | - Hideo Hosono
- MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, Yokohama 226-8503, Japan
- National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
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12
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Shi Y, Fu Y, Ma Z, Zhao D, Wang K, Xiao G, Zou B. Pressure Regulating Self-Trapped States toward Remarkable Emission Enhancement of Zero-Dimensional Lead-Free Halides Nanocrystals. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300455. [PMID: 36808884 DOI: 10.1002/smll.202300455] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2023] [Revised: 02/04/2023] [Indexed: 05/25/2023]
Abstract
Copper(I)-based halides have recently attracted increasing attention as a substitute for lead halides, owing to their nontoxicity, abundance, unique structure, and optoelectric properties. However, exploring an effective strategy to further improve their optical activities and revealing structure-optical property relationships still remain a great concern. Here, by using high pressure technique, a remarkable enhancement of self-trapped exciton (STE) emission associated with the energy exchange between multiple self-trapped states in zero-dimensional lead-free halide Cs3 Cu2 I5 NCs is successfully achieved. Furthermore, high-pressure processing endows the piezochromism of Cs3 Cu2 I5 NCs by experiencing a white light and a strong purple light emission, which is able to be stabilized at near-ambient pressure. The distortion of [Cu2 I5 ] clusters composing of tetrahedral [CuI4 ] and trigonal planar [CuI3 ] and the decreased Cu-Cu distance between the adjacent Cu-I tetrahedron and triangle are responsible for the significant STEs emission enhancement under high pressure. The experiments combined with first-principles calculations not only shed light on the structure-optical property relationships of [Cu2 I5 ] clusters halide, but also provide guidance for improving emission intensity that is highly desirable in solid-state lighting applications.
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Affiliation(s)
- Yue Shi
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, P. R. China
| | - Yuan Fu
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, P. R. China
| | - Zhiwei Ma
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, P. R. China
| | - Dianlong Zhao
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, P. R. China
| | - Kai Wang
- Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information Technology, Liaocheng University, Liaocheng, 252000, P. R. China
| | - Guanjun Xiao
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, P. R. China
| | - Bo Zou
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, 130012, P. R. China
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13
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Lu Q, Zhang Y, Yang G, Xiong M, Wu W, Xu Z, Lu H, Liang Y, He Z, Yu Y, Mo X, Han X, Pan C. Large-Scale, Uniform-Patterned CsCu 2 I 3 Films for Flexible Solar-Blind Photodetectors Array with Ultraweak Light Sensing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2300364. [PMID: 36987976 DOI: 10.1002/smll.202300364] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/12/2023] [Revised: 02/27/2023] [Indexed: 06/19/2023]
Abstract
Cesium copper halide perovskite is one of the promising materials for solar-blind light detection. However, most of the cesium copper halide perovskite-based photodetectors (PDs) are focused on ultraviolet A detection and realized on the rigid substrate in the single device configuration. Here, a flexible solar-blind PDs array (10 × 10 pixels) based on the CsCu2 I3 film patterns for ultraweak light sensing and light distribution imaging is reported. Large-scale CsCu2 I3 film arrays are synthesized with various shapes and uniform dimensions through a simple vacuum-heating-assisted solution method. Benefiting from excellent air stability and superior resistance to the photodegrading of the CsCu2 I3 film, the array device exhibits long-term stable photoswitching behavior for 8 h and ultralow light detection capability to resolve the light intensity of 6.1 nW cm-2 with a high responsivity of 62 A W-1 , and the array device can acquire clear images of "G", "X", and "U" showing the input light distribution. Moreover, the flame detection and warning system based on a curved solar-blind PDs array is demonstrated, which can be used for multi-flame monitoring and locating. These results can encourage potential applications of the CsCu2 I3 film-based PDs array in the field of optical communication and environment monitoring.
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Affiliation(s)
- Qiuchun Lu
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, 530004, P. R. China
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
| | - Yufei Zhang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Guanlin Yang
- College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Meiling Xiong
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, 530004, P. R. China
| | - Wenqiang Wu
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Zhangsheng Xu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Hui Lu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yegang Liang
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, 530004, P. R. China
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
| | - Zeping He
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yang Yu
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, 530004, P. R. China
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
| | - Xiaoming Mo
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, 530004, P. R. China
| | - Xun Han
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311200, P. R. China
| | - Caofeng Pan
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, 530004, P. R. China
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
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14
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An HX, Qiao BS, Zhang ZH, Lian ZD, Wei Z, Li XS, Zeng QG, Wang B, Ng KW, Wang SP. Ultraviolet photodetector based on RbCu 2I 3microwire. NANOTECHNOLOGY 2023; 34:145402. [PMID: 36621847 DOI: 10.1088/1361-6528/acb0d4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/03/2022] [Accepted: 01/06/2023] [Indexed: 06/17/2023]
Abstract
Copper-based halide perovskites have shown great potential in lighting and photodetection due to their excellent photoelectric properties, good stability and lead-free nature. However, as an important piece of copper-based perovskites, the synthesis and application of RbCu2I3have never been reported. Here, we demonstrate the synthesis of high-quality RbCu2I3microwires (MWs) by a fast-cooling hot saturated solution method. The prepared MWs exhibit an orthorhombic structure with a smooth surface. Optical measurements show the RbCu2I3MWs have a sharp ultraviolet absorption edge with 3.63 eV optical band gap and ultra-large stokes shift (300 nm) in photoluminescence. The subsequent photodetector based on a single RbCu2I3MW shows excellent ultraviolet detection performance. Under the 340 nm illumination, the device shows a specific detectivity of 5.0 × 109Jones and a responsivity of 380 mA·W-1. The synthesis method and physical properties of RbCu2I3could be a guide to the future optoelectronic application of the new material.
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Affiliation(s)
- Hong-Xiang An
- School of Applied Physics and Materials, Wuyi University, Jiangmen, Guangdong 529020, People's Republic of China
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao, Macao SAR 999078, People's Republic of China
| | - Bao-Shi Qiao
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao, Macao SAR 999078, People's Republic of China
| | - Zhi-Hong Zhang
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao, Macao SAR 999078, People's Republic of China
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin 130022, People's Republic of China
| | - Zhen-Dong Lian
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao, Macao SAR 999078, People's Republic of China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin 130022, People's Republic of China
| | - Xiao-Shuang Li
- School of Applied Physics and Materials, Wuyi University, Jiangmen, Guangdong 529020, People's Republic of China
| | - Qing-Guang Zeng
- School of Applied Physics and Materials, Wuyi University, Jiangmen, Guangdong 529020, People's Republic of China
| | - Bo Wang
- School of Applied Physics and Materials, Wuyi University, Jiangmen, Guangdong 529020, People's Republic of China
| | - Kar Wei Ng
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao, Macao SAR 999078, People's Republic of China
| | - Shuang-Peng Wang
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao, Macao SAR 999078, People's Republic of China
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15
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Su J, Li X, Xu M, Zhang J, Liu X, Zheng X, Shi Y, Zhang Q. Enhancing Photodetection Ability of MoS 2 Nanoscrolls via Interface Engineering. ACS APPLIED MATERIALS & INTERFACES 2023; 15:3307-3316. [PMID: 36596237 DOI: 10.1021/acsami.2c18537] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Van der Waals semiconductors have been really confirmed in two-dimensional (2D) layered systems beyond the traditional limits of lattice-matching requirements. The extension of this concept to the 1D atomic level may generate intriguing physical functionalities due to its non-covalent bonding surface. However, whether the curvature of the lattice in such rolled-up structures affects their optoelectronic features or the performance of devices established on them remains an open question. Here, MoS2-based nanoscrolls were obtained by virtue of an alkaline solution-assisted method and the 0D/1D (BaTiO3/MoS2) strategy to tune their optoelectronic properties and improve the light sensing performance was explored. The capillary force generated by a drop of NaHCO3 solution could drive the delamination of nanosheets from the underlying substrate and a spontaneous rolling-up process. The package of BaTiO3 particles in MoS2 nanoscrolls has been evident by TEM image, and the optical characterizations were mirrored via micro-Raman spectroscopy and photoluminescence. These bare MoS2 nanoscrolls reveal a reduced photoresponse compared to the plane structures due to the curvature of the lattice. However, such BaTiO3/MoS2 nanoscrolls exhibit a significantly improved photodetection (Rhybrid = 73.9 A/W vs Ronly = 1.1 A/W and R2D = 1.5 A/W at 470 nm, 0.58 mW·cm-2), potentially due to the carrier extraction/injection occurring between BaTiO3 and MoS2. This study thereby provides an insight into 1D van der Waals material community and demonstrates a general approach to fabricate high-performance 1D van der Waals optoelectronic devices.
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Affiliation(s)
- Jun Su
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Xin Li
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Minxuan Xu
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Jian Zhang
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Xiaolian Liu
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Xin Zheng
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Yueqin Shi
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Qi Zhang
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
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16
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Hu Y, Yan X, Zhou L, Chen P, Pang Q, Chen Y. Improved Energy Transfer in Mn-Doped Cs 3Cu 2I 5 Microcrystals Induced by Localized Lattice Distortion. J Phys Chem Lett 2022; 13:10786-10792. [PMID: 36374550 DOI: 10.1021/acs.jpclett.2c03039] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
With nontoxicity and high emission efficiency, luminescent copper(I)-based halides have attracted much attention as alternatives for lead-based perovskites in photoelectric domains. However, extending the emission wavelength by doping with Mn2+ in a facile way is still a challenge. In this work, Mn2+-doped Cs3Cu2I5 microcrystals were synthesized by a mild solution method, and double emission bands from self-trapped excitons (STEs) and Mn2+ peaking at 445 and 560 nm, respectively, were observed. More importantly, further introduction of alkali metal ions (Rb+, K+, Na+) considerably promoted the luminescence performance of the Cs3Cu2I5-Mn microcrystals. The STE → Mn2+ energy transfer efficiency of the typical sample doped with Na+ increased from ∼0 to 21.30%, and the photoluminescence quantum yield (PLQY) increased from 47.32% to 62.06%. The detailed structural and optical characterizations combined with DFT calculations proved that the doping with alkali metal ions causes lattice distortion and enhances the coupling between [MnI4] and [CuI4] tetrahedra, thus promoting the energy transfer efficiency and the PLQY.
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Affiliation(s)
- Yangxiang Hu
- School of Chemistry and Chemical Engineering/Guangxi Key Laboratory of Electrochemical Energy Materials, Guangxi University, Nanning, Guangxi530004, P. R. China
| | - Xinxin Yan
- School of Chemistry and Chemical Engineering/Guangxi Key Laboratory of Electrochemical Energy Materials, Guangxi University, Nanning, Guangxi530004, P. R. China
- School of Chemistry and Chemical Engineering/Institute of Clean Energy and Materials, Guangzhou University, Guangzhou510006, P. R. China
| | - Liya Zhou
- School of Chemistry and Chemical Engineering/Guangxi Key Laboratory of Electrochemical Energy Materials, Guangxi University, Nanning, Guangxi530004, P. R. China
| | - Peican Chen
- School of Chemistry and Chemical Engineering/Guangxi Key Laboratory of Electrochemical Energy Materials, Guangxi University, Nanning, Guangxi530004, P. R. China
| | - Qi Pang
- School of Chemistry and Chemical Engineering/Guangxi Key Laboratory of Electrochemical Energy Materials, Guangxi University, Nanning, Guangxi530004, P. R. China
| | - Yibo Chen
- School of Chemistry and Chemical Engineering/Institute of Clean Energy and Materials, Guangzhou University, Guangzhou510006, P. R. China
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