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Arora R, Waghmare U, Rao CNR. Metavalent Bonding in 2D Chalcogenides: Structural Origin and Chemical Mechanisms. Angew Chem Int Ed Engl 2024; 63:e202313852. [PMID: 37984926 DOI: 10.1002/anie.202313852] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 11/15/2023] [Accepted: 11/16/2023] [Indexed: 11/22/2023]
Abstract
An unusual set of anomalous functional properties of rocksalt crystals of Group IV chalcogenides were recently linked to a kind of bonding termed as metavalent bonding (MVB) which involves violation of the 8-N rule. Precise mechanisms of MVB and the relevance of lone pair of Group IV cations are still debated. With restrictions of low dimensionality on the possible atomic coordination, 2D materials provide a rich platform for exploration of MVB. Here, we present first-principles theoretical analysis of the nature of bonding in five distinct 2D lattices of Group IV chalcogenides MX (M: Sn, Pb, Ge and X: S, Se, Te), in which the natural out-of-plane expression of the lone pair versus in-plane bonding can be systematically explored. While their honeycomb lattices respecting the 8-N rule are shown to exhibit covalent bonding, their square and orthorhombic structures exhibit MVB only in-plane, with cationic lone pair activating the out-of-plane structural puckering that controls their relative stability. Anomalies in Born-effective charges, dielectric constants, Grüneisen parameters occur only in their in-plane behaviour, confirming MVB is confined strictly to 2D and originates from p-p orbital interactions. Our work opens up directions for chemical design of MVB based 2D materials and their heterostructures.
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Affiliation(s)
- Raagya Arora
- Theoretical Sciences Unit, School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur, Bangalore, 560 064, India
| | - Umesh Waghmare
- Sheikh Saqr Laboratory, JNCASR Jakkur, Bangalore, 560 064, India
- Theoretical Sciences Unit, School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur, Bangalore, 560 064, India
- New Chemistry Unit, School of Advanced Materials, JNCASR Jakkur, Bangalore, 560 064, India
| | - C N R Rao
- Sheikh Saqr Laboratory, JNCASR Jakkur, Bangalore, 560 064, India
- New Chemistry Unit, School of Advanced Materials, JNCASR Jakkur, Bangalore, 560 064, India
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3
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Prabhathan P, Sreekanth KV, Teng J, Ko JH, Yoo YJ, Jeong HH, Lee Y, Zhang S, Cao T, Popescu CC, Mills B, Gu T, Fang Z, Chen R, Tong H, Wang Y, He Q, Lu Y, Liu Z, Yu H, Mandal A, Cui Y, Ansari AS, Bhingardive V, Kang M, Lai CK, Merklein M, Müller MJ, Song YM, Tian Z, Hu J, Losurdo M, Majumdar A, Miao X, Chen X, Gholipour B, Richardson KA, Eggleton BJ, Sharda K, Wuttig M, Singh R. Roadmap for phase change materials in photonics and beyond. iScience 2023; 26:107946. [PMID: 37854690 PMCID: PMC10579438 DOI: 10.1016/j.isci.2023.107946] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2023] Open
Abstract
Phase Change Materials (PCMs) have demonstrated tremendous potential as a platform for achieving diverse functionalities in active and reconfigurable micro-nanophotonic devices across the electromagnetic spectrum, ranging from terahertz to visible frequencies. This comprehensive roadmap reviews the material and device aspects of PCMs, and their diverse applications in active and reconfigurable micro-nanophotonic devices across the electromagnetic spectrum. It discusses various device configurations and optimization techniques, including deep learning-based metasurface design. The integration of PCMs with Photonic Integrated Circuits and advanced electric-driven PCMs are explored. PCMs hold great promise for multifunctional device development, including applications in non-volatile memory, optical data storage, photonics, energy harvesting, biomedical technology, neuromorphic computing, thermal management, and flexible electronics.
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Affiliation(s)
- Patinharekandy Prabhathan
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Centre for Disruptive Photonic Technologies, The Photonic Institute, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Kandammathe Valiyaveedu Sreekanth
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A∗STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Jinghua Teng
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A∗STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Joo Hwan Ko
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Young Jin Yoo
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Hyeon-Ho Jeong
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Yubin Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Shoujun Zhang
- DELL, Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Key Laboratory of Optoelectronic Information Technology (Ministry of Education of China), Tianjin University, Tianjin 300072, China
| | - Tun Cao
- DELL, School of Optoelectronic Engineering and Instrumentation Science, Dalian University of Technology, Dalian 116024, China
| | - Cosmin-Constantin Popescu
- Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Brian Mills
- Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Tian Gu
- Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Materials Research Laboratory, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Zhuoran Fang
- Department of Electrical & Computer Engineering, University of Washington, Washington, Seattle, USA
| | - Rui Chen
- Department of Electrical & Computer Engineering, University of Washington, Washington, Seattle, USA
| | - Hao Tong
- Wuhan National Research Center for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
| | - Yi Wang
- Wuhan National Research Center for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
| | - Qiang He
- Wuhan National Research Center for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
| | - Yitao Lu
- Wuhan National Research Center for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
| | - Zhiyuan Liu
- Wuhan National Research Center for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
| | - Han Yu
- Institute of Advanced Materials, Beijing Normal University, Beijing 100875, China
| | - Avik Mandal
- Nanoscale Optics Lab, ECE Department, University of Alberta, Edmonton, Canada
| | - Yihao Cui
- Nanoscale Optics Lab, ECE Department, University of Alberta, Edmonton, Canada
| | - Abbas Sheikh Ansari
- Nanoscale Optics Lab, ECE Department, University of Alberta, Edmonton, Canada
| | - Viraj Bhingardive
- Nanoscale Optics Lab, ECE Department, University of Alberta, Edmonton, Canada
| | - Myungkoo Kang
- CREOL, College of Optics and Photonics, University of Central Florida, Orlando, FL, USA
| | - Choon Kong Lai
- Institute of Photonics and Optical Science (IPOS), School of Physics, The University of Sydney, New South Wales, NSW 2006, Australia
- The University of Sydney Nano Institute (Sydney Nano), The University of Sydney, New South Wales, NSW 2006, Australia
| | - Moritz Merklein
- Institute of Photonics and Optical Science (IPOS), School of Physics, The University of Sydney, New South Wales, NSW 2006, Australia
- The University of Sydney Nano Institute (Sydney Nano), The University of Sydney, New South Wales, NSW 2006, Australia
| | | | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
- Anti-Viral Research Center, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
- AI Graduate School, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Zhen Tian
- DELL, Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Key Laboratory of Optoelectronic Information Technology (Ministry of Education of China), Tianjin University, Tianjin 300072, China
| | - Juejun Hu
- Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Materials Research Laboratory, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Maria Losurdo
- Istituto di Chimica della Materia Condensata e di Tecnologie per l'Energia, CNR-ICMATE, Corso Stati Uniti 4, 35127 Padova, Italy
| | - Arka Majumdar
- Department of Electrical & Computer Engineering, University of Washington, Washington, Seattle, USA
| | - Xiangshui Miao
- Wuhan National Research Center for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China
| | - Xiao Chen
- Institute of Advanced Materials, Beijing Normal University, Beijing 100875, China
| | - Behrad Gholipour
- Nanoscale Optics Lab, ECE Department, University of Alberta, Edmonton, Canada
| | - Kathleen A. Richardson
- CREOL, College of Optics and Photonics, University of Central Florida, Orlando, FL, USA
- Department of Materials Science and Engineering, University of Central Florida, Orlando, FL, USA
| | - Benjamin J. Eggleton
- Institute of Photonics and Optical Science (IPOS), School of Physics, The University of Sydney, New South Wales, NSW 2006, Australia
- The University of Sydney Nano Institute (Sydney Nano), The University of Sydney, New South Wales, NSW 2006, Australia
| | - Kanudha Sharda
- iScience, Cell Press, 125 London Wall, Barbican, London EC2Y 5AJ, UK
- iScience, Cell Press, RELX India Pvt Ltd., 14th Floor, Building No. 10B, DLF Cyber City, Phase II, Gurugram, Haryana 122002, India
| | - Matthias Wuttig
- Institute of Physics IA, RWTH Aachen University, 52074 Aachen, Germany
- Peter Grünberg Institute (PGI 10), Forschungszentrum Jülich, 52428 Jülich, Germany
| | - Ranjan Singh
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Centre for Disruptive Photonic Technologies, The Photonic Institute, 50 Nanyang Avenue, Singapore 639798, Singapore
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Jalil AR, Hou X, Schüffelgen P, Bae JH, Neumann E, Mussler G, Plucinski L, Grützmacher D. Phase-Selective Epitaxy of Trigonal and Orthorhombic Bismuth Thin Films on Si (111). NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2143. [PMID: 37513154 PMCID: PMC10386495 DOI: 10.3390/nano13142143] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2023] [Revised: 07/16/2023] [Accepted: 07/20/2023] [Indexed: 07/30/2023]
Abstract
Over the past three decades, the growth of Bi thin films has been extensively explored due to their potential applications in various fields such as thermoelectrics, ferroelectrics, and recently for topological and neuromorphic applications, too. Despite significant research efforts in these areas, achieving reliable and controllable growth of high-quality Bi thin-film allotropes has remained a challenge. Previous studies have reported the growth of trigonal and orthorhombic phases on various substrates yielding low-quality epilayers characterized by surface morphology. In this study, we present a systematic growth investigation, enabling the high-quality growth of Bi epilayers on Bi-terminated Si (111) 1 × 1 surfaces using molecular beam epitaxy. Our work yields a phase map that demonstrates the realization of trigonal, orthorhombic, and pseudocubic thin-film allotropes of Bi. In-depth characterization through X-ray diffraction (XRD) techniques and scanning transmission electron microscopy (STEM) analysis provides a comprehensive understanding of phase segregation, phase stability, phase transformation, and phase-dependent thickness limitations in various Bi thin-film allotropes. Our study provides recipes for the realization of high-quality Bi thin films with desired phases, offering opportunities for the scalable refinement of Bi into quantum and neuromorphic devices and for revisiting technological proposals for this versatile material platform from the past 30 years.
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Affiliation(s)
- Abdur Rehman Jalil
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
- JARA-FIT (Fundamentals of Future Information Technology), Jülich-Aachen Research Alliance, Forschungszentrum Jülich and RWTH Aachen University, 52425 Jülich, Germany
- Peter Grünberg Institute (PGI-10), JARA-Green IT, Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Xiao Hou
- JARA-FIT (Fundamentals of Future Information Technology), Jülich-Aachen Research Alliance, Forschungszentrum Jülich and RWTH Aachen University, 52425 Jülich, Germany
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Peter Schüffelgen
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
- JARA-FIT (Fundamentals of Future Information Technology), Jülich-Aachen Research Alliance, Forschungszentrum Jülich and RWTH Aachen University, 52425 Jülich, Germany
| | - Jin Hee Bae
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Elmar Neumann
- Helmholtz Nano Facility (HNF), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Gregor Mussler
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Lukasz Plucinski
- Peter Grünberg Institute (PGI-6), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Detlev Grützmacher
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
- JARA-FIT (Fundamentals of Future Information Technology), Jülich-Aachen Research Alliance, Forschungszentrum Jülich and RWTH Aachen University, 52425 Jülich, Germany
- Peter Grünberg Institute (PGI-10), JARA-Green IT, Forschungszentrum Jülich, 52425 Jülich, Germany
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Zhang W, Zhang H, Sun S, Wang X, Lu Z, Wang X, Wang JJ, Jia C, Schön CF, Mazzarello R, Ma E, Wuttig M. Metavalent Bonding in Layered Phase-Change Memory Materials. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2300901. [PMID: 36995041 DOI: 10.1002/advs.202300901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/14/2023] [Revised: 03/04/2023] [Indexed: 05/27/2023]
Abstract
Metavalent bonding (MVB) is characterized by the competition between electron delocalization as in metallic bonding and electron localization as in covalent or ionic bonding, serving as an essential ingredient in phase-change materials for advanced memory applications. The crystalline phase-change materials exhibits MVB, which stems from the highly aligned p orbitals and results in large dielectric constants. Breaking the alignment of these chemical bonds leads to a drastic reduction in dielectric constants. In this work, it is clarified how MVB develops across the so-called van der Waals-like gaps in layered Sb2 Te3 and Ge-Sb-Te alloys, where coupling of p orbitals is significantly reduced. A type of extended defect involving such gaps in thin films of trigonal Sb2 Te3 is identified by atomic imaging experiments and ab initio simulations. It is shown that this defect has an impact on the structural and optical properties, which is consistent with the presence of non-negligible electron sharing in the gaps. Furthermore, the degree of MVB across the gaps is tailored by applying uniaxial strain, which results in a large variation of dielectric function and reflectivity in the trigonal phase. At last, design strategies are provided for applications utilizing the trigonal phase.
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Affiliation(s)
- Wei Zhang
- Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Hangming Zhang
- Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Suyang Sun
- Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Xiaozhe Wang
- Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zhewen Lu
- Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Xudong Wang
- Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jiang-Jing Wang
- Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Chunlin Jia
- School of Microelectronics, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Carl-Friedrich Schön
- Institute of Physics IA, JARA-FIT, RWTH Aachen University, 52074, Aachen, Germany
| | | | - En Ma
- Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Matthias Wuttig
- Institute of Physics IA, JARA-FIT, RWTH Aachen University, 52074, Aachen, Germany
- Peter Grünberg Institute (PGI 10), Forschungszentrum Jülich GmbH, 52425, Jülich, Germany
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Yang L, Tiwari SC, Fukushima S, Shimojo F, Kalia RK, Nakano A, Vashishta P, Branicio PS. Photoexcitation-Induced Nonthermal Ultrafast Loss of Long-Range Order in GeTe. J Phys Chem Lett 2022; 13:10230-10236. [PMID: 36300798 DOI: 10.1021/acs.jpclett.2c02448] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Nonadiabatic quantum molecular dynamics is used to investigate the evolution of GeTe photoexcited states. Results reveal a photoexcitation-induced picosecond nonthermal path for the loss of long-range order. A valence electron excitation threshold of 4% is found to trigger local disorder by switching Ge atoms from octahedral to tetrahedral sites and promoting Ge-Ge bonding. The resulting loss of long-range order for a higher valence electron excitation fraction is achieved without fulfilling the Lindemann criterion for melting, therefore utilizing a nonthermal path. The photoexcitation-induced structural disorder is accompanied by charge transfer from Te to Ge, Ge-Te bonding-to-antibonding, and Ge-Ge antibonding-to-bonding change, triggering Ge-Te bond breaking and promoting the formation of Ge-Ge wrong bonds. These results provide an electronic-structure basis to understand the photoexcitation-induced ultrafast changes in the structure and properties of GeTe and other phase-change materials.
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Affiliation(s)
- Liqiu Yang
- Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089, United States
| | - Subodh C Tiwari
- Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089, United States
| | - Shogo Fukushima
- Department of Physics, Kumamoto University, Kumamoto 860-8555, Japan
| | - Fuyuki Shimojo
- Department of Physics, Kumamoto University, Kumamoto 860-8555, Japan
| | - Rajiv K Kalia
- Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089, United States
| | - Aiichiro Nakano
- Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089, United States
| | - Priya Vashishta
- Collaboratory for Advanced Computing and Simulation, University of Southern California, Los Angeles, California 90089, United States
| | - Paulo S Branicio
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, United States
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