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Dragoman M, Dinescu A, Aldrigo M, Dragoman D. Quantum Graphene Asymmetric Devices for Harvesting Electromagnetic Energy. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1114. [PMID: 38998720 PMCID: PMC11243634 DOI: 10.3390/nano14131114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2024] [Revised: 06/26/2024] [Accepted: 06/27/2024] [Indexed: 07/14/2024]
Abstract
We present here the fabrication at the wafer level and the electrical performance of two types of graphene diodes: ballistic trapezoidal-shaped graphene diodes and lateral tunneling graphene diodes. In the case of the ballistic trapezoidal-shaped graphene diode, we observe a large DC current of 200 µA at a DC bias voltage of ±2 V and a large voltage responsivity of 2000 v/w, while in the case of the lateral tunneling graphene diodes, we obtain a DC current of 1.5 mA at a DC bias voltage of ±2 V, with a voltage responsivity of 3000 v/w. An extended analysis of the defects produced during the fabrication process and their influences on the graphene diode performance is also presented.
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Affiliation(s)
- Mircea Dragoman
- National Institute for Research and Development in Microtechnologies (IMT), Strada Erou Iancu Nicolae 126A, 077190 Voluntari, Romania
| | - Adrian Dinescu
- National Institute for Research and Development in Microtechnologies (IMT), Strada Erou Iancu Nicolae 126A, 077190 Voluntari, Romania
| | - Martino Aldrigo
- National Institute for Research and Development in Microtechnologies (IMT), Strada Erou Iancu Nicolae 126A, 077190 Voluntari, Romania
| | - Daniela Dragoman
- Physics Faculty, University of Bucharest, P.O. Box MG-11, 077125 Bucharest, Romania
- Academy of Romanian Scientists, Strada Ilfov, Nr. 3, 050044 Bucharest, Romania
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Borhade PS, Chen T, Chen DR, Chen YX, Yao YC, Yen ZL, Tsai CH, Hsieh YP, Hofmann M. Self-Expansion Based Multi-Patterning for 2D Materials Fabrication beyond the Lithographical Limit. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311209. [PMID: 38098342 DOI: 10.1002/smll.202311209] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2023] [Revised: 12/04/2023] [Indexed: 05/30/2024]
Abstract
Two-dimensional (2D) materials are promising successors for silicon transistor channels in ultimately scaled devices, necessitating significant research efforts to study their behavior at nanoscopic length scales. Unfortunately, current research has limited itself to direct patterning approaches, which limit the achievable resolution to the diffraction limit and introduce unwanted defects into the 2D material. The potential of multi-patterning to fabricate 2D materials features with unprecedented precision and low complexity at large scale is demonstrated here. By combining lithographic patterning of a mandrel and bottom-up self-expansion, this approach enables pattern resolution one order of magnitude below the lithographical resolution. In-depth characterization of the self-expansion double patterning (SEDP) process reveals the ability to manipulate the critical dimension with nanometer precision through a self-limiting and temperature-controlled oxidation process. These results indicate that the SEDP process can regain the quality and morphology of the 2D material, as shown by high-resolution microscopy and optical spectroscopy. This approach is shown to open up new avenues for research into high-performance, ultra-scaled 2D materials devices for future electronics.
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Affiliation(s)
- Poonam Subhash Borhade
- Department of Physics, National Taiwan University, Taipei, 10617, Taiwan
- Nano Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei, 10617, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan
| | - Tawat Chen
- Department of Physics, National Taiwan University, Taipei, 10617, Taiwan
| | - Ding-Rui Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei, 10617, Taiwan
| | - Yu-Xiang Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei, 10617, Taiwan
| | - Yu-Chi Yao
- Department of Physics, National Taiwan University, Taipei, 10617, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan
| | - Zhi-Long Yen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei, 10617, Taiwan
| | - Chun Hsiung Tsai
- Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, 30092, Taiwan
| | - Ya-Ping Hsieh
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan
| | - Mario Hofmann
- Department of Physics, National Taiwan University, Taipei, 10617, Taiwan
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Wei Z, Li H, Dou L, Xie L, Wang Z, Cheng X. Metasurface-Based Quantum Searcher on a Silicon-On-Insulator Chip. MICROMACHINES 2022; 13:mi13081204. [PMID: 36014126 PMCID: PMC9413265 DOI: 10.3390/mi13081204] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/06/2022] [Revised: 07/26/2022] [Accepted: 07/27/2022] [Indexed: 12/10/2022]
Abstract
Optical analog computing has natural advantages of parallel computation, high speed and low energy consumption over traditional digital computing. To date, research in the field of on-chip optical analog computing has mainly focused on classical mathematical operations. Despite the advantages of quantum computing, on-chip quantum analog devices based on metasurfaces have not been demonstrated so far. In this work, based on a silicon-on-insulator (SOI) platform, we illustrated an on-chip quantum searcher with a characteristic size of 60 × 20 μm2. We applied classical waves to simulate the quantum search algorithm based on the superposition principle and interference effect, while combining it with an on-chip metasurface to realize modulation capability. The marked items are found when the incident waves are focused on the marked positions, which is precisely the same as the efficiency of the quantum search algorithm. The proposed on-chip quantum searcher facilitates the miniaturization and integration of wave-based signal processing systems.
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Affiliation(s)
- Zeyong Wei
- Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China; (Z.W.); (H.L.); (L.D.); (Z.W.); (X.C.)
- MOE Key Laboratory of Advanced Micro-Structured Materials, Tongji University, Shanghai 200092, China
- Shanghai Frontiers Science Research Base of Digital Optics, Tongji University, Shanghai 200092, China
| | - Haoyu Li
- Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China; (Z.W.); (H.L.); (L.D.); (Z.W.); (X.C.)
| | - Linyuan Dou
- Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China; (Z.W.); (H.L.); (L.D.); (Z.W.); (X.C.)
| | - Lingyun Xie
- Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China; (Z.W.); (H.L.); (L.D.); (Z.W.); (X.C.)
- MOE Key Laboratory of Advanced Micro-Structured Materials, Tongji University, Shanghai 200092, China
- Shanghai Frontiers Science Research Base of Digital Optics, Tongji University, Shanghai 200092, China
- Correspondence:
| | - Zhanshan Wang
- Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China; (Z.W.); (H.L.); (L.D.); (Z.W.); (X.C.)
- MOE Key Laboratory of Advanced Micro-Structured Materials, Tongji University, Shanghai 200092, China
- Shanghai Frontiers Science Research Base of Digital Optics, Tongji University, Shanghai 200092, China
| | - Xinbin Cheng
- Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China; (Z.W.); (H.L.); (L.D.); (Z.W.); (X.C.)
- MOE Key Laboratory of Advanced Micro-Structured Materials, Tongji University, Shanghai 200092, China
- Shanghai Frontiers Science Research Base of Digital Optics, Tongji University, Shanghai 200092, China
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