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Pan Y, Zheng T, Gao F, Qi L, Gao W, Zhang J, Li L, An K, Gu H, Chen H. High-Performance Photoinduced Tunneling Self-Driven Photodetector for Polarized Imaging and Polarization-Coded Optical Communication based on Broken-Gap ReSe 2/SnSe 2 van der Waals Heterojunction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311606. [PMID: 38497093 DOI: 10.1002/smll.202311606] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 02/17/2024] [Indexed: 03/19/2024]
Abstract
Novel 2D materials with low-symmetry structures exhibit great potential applications in developing monolithic polarization-sensitive photodetectors with small volume. However, owing to the fact that at least half of them presented a small anisotropic factor of ≈2, comprehensive performance of present polarization-sensitive photodetectors based on 2D materials is still lower than the practical application requirements. Herein, a self-driven photodetector with high polarization sensitivity using a broken-gap ReSe2/SnSe2 van der Waals heterojunction (vdWH) is demonstrated. Anisotropic ratio of the photocurrent (Imax/Imin) could reach 12.26 (635 nm, 179 mW cm-2). Furthermore, after a facile combination of the ReSe2/SnSe2 device with multilayer graphene (MLG), Imax/Imin of the MLG/ReSe2/SnSe2 can be further increased up to13.27, which is 4 times more than that of pristine ReSe2 photodetector (3.1) and other 2D material photodetectors even at a bias voltage. Additionally, benefitting from the synergistic effect of unilateral depletion and photoinduced tunneling mechanism, the MLG/ReSe2/SnSe2 device exhibits a fast response speed (752/928 µs) and an ultrahigh light on/off ratio (105). More importantly, MLG/ReSe2/SnSe2 device exhibits excellent potential applications in polarized imaging and polarization-coded optical communication with quaternary logic state without any power supply. This work provides a novel feasible avenue for constructing next-generation smart polarization-sensitive photodetector with low energy consumption.
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Affiliation(s)
- Yuan Pan
- Institute of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou, 510631, P. R. China
| | - Tao Zheng
- Institute of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou, 510631, P. R. China
| | - Feng Gao
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, P. R. China
| | - Ligan Qi
- Institute of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou, 510631, P. R. China
| | - Wei Gao
- Institute of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou, 510631, P. R. China
| | - Jielian Zhang
- Institute of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou, 510631, P. R. China
| | - Ling Li
- Institute of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou, 510631, P. R. China
| | - Kang An
- Institute of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou, 510631, P. R. China
| | - Huaimin Gu
- Institute of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou, 510631, P. R. China
| | - Hongyu Chen
- Institute of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou, 510631, P. R. China
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Tang J, He B, Kuang K, Li M, Cao S, Yu Z, He Y, Chen J. Bulk Photovoltaic Effect in Polar 3D Perovskitoid Enables Self-Powered Polarization-Sensitive Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2310591. [PMID: 38409636 DOI: 10.1002/smll.202310591] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Revised: 01/26/2024] [Indexed: 02/28/2024]
Abstract
The family of polar hybrid perovskites, in which bulk photovoltaic effects (BPVEs) drive steady photocurrent without bias voltage, have shown promising potentials in self-powered polarization-sensitive photodetection. However, reports of BPVEs in 3D perovskites remain scare, being mainly hindered by the limited dipole moment or lack of symmetry breaking. Herein, a polar 3D perovskitoid, (BDA)Pb2Br6 (BDA = NH3C4H8NH3), where the spontaneous polarization (Ps)-induced BPVE drives self-powered photodetection of polarized-light is reported. Emphatically, the edge-sharing Pb2Br10 dimer building unit allows the optical anisotropy and polarity in 3D (BDA)Pb2Br6, which triggers distinct optical absorption dichroism ratio of ≈2.80 and BPVE dictated photocurrent of 3.5 µA cm-2. Strikingly, these merits contribute to a polarization-sensitive photodetection with a high polarization ratio (≈4) under self-powered mode, beyond those of 2D hybrid perovskites and inorganic materials. This study highlights the potential of polar 3D perovskitoids toward intelligent optoelectronic applications.
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Affiliation(s)
- Junjie Tang
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Biqi He
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Kuan Kuang
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Mingkai Li
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Sheng Cao
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Zixian Yu
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Yunbin He
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
| | - Junnian Chen
- Ministry-of-Education Key Laboratory of Green Preparation and Application for Functional Materials, and School of Materials Science & Engineering, Hubei University, Wuhan, 430062, China
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Liu C, Zheng T, Shu K, Shu S, Lan Z, Yang M, Zheng Z, Huo N, Gao W, Li J. Polarization-Sensitive Self-Powered Schottky Photodetector with High Photovoltaic Performance Induced by Geometry-Asymmetric Contacts. ACS APPLIED MATERIALS & INTERFACES 2024; 16:13914-13926. [PMID: 38447591 DOI: 10.1021/acsami.3c16047] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/08/2024]
Abstract
Polarization-sensitive photodetectors have attracted considerable attention owing to their potential application prospects in navigation, optical switching, and communication. However, it remains challenging to develop a facile and effective strategy to simultaneously meet the demands of low power consumption, high performance, and excellent polarization sensitivity. Herein, a series of low-symmetry two-dimensional (2D) ReSe2 Schottky photodetectors with geometry-asymmetric contacts are constructed. These devices exhibit excellent photoelectrical performance and impressive polarization sensitivity in the self-powered mode owing to the difference in the Schottky barrier height induced by the asymmetric contact areas, interfacial states, and thickness difference. Particularly, an outstanding responsivity of 379 mA/W, a decent specific detectivity of 6.8 × 1011 Jones, and a high light on/off ratio (Ilight/Idark) of over 105 under 635 nm light illumination are achieved. Scanning photocurrent mapping (SPCM) measurements further confirm that the ReSe2/drain overlapped region (corresponding to the smaller contact area side) with a higher Schottky barrier height plays a dominant role in the generation of photocurrent. Furthermore, the proposed device displays impressive polarization ratios (PRs) of 3.1 and 3.6 at zero bias under 635 and 808 nm irradiation, respectively. The high-resolution single-pixel imaging capability is also demonstrated. This work reveals the great potential of the ReSe2 Schottky photodetector with geometry-asymmetric contacts for high-performance, self-powered, and polarization-sensitive photodetection.
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Affiliation(s)
- Chaoyang Liu
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, 528225 Foshan, P. R. China
| | - Tao Zheng
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, 528225 Foshan, P. R. China
| | - Kaixiang Shu
- Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, Sorbonne Université, 75005 Paris, France
| | - Sheng Shu
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, 528225 Foshan, P. R. China
| | - Zhibin Lan
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, 528225 Foshan, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, 528225 Foshan, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, 510006 Guangzhou, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, 528225 Foshan, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, 528225 Foshan, P. R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, 310027 Hangzhou, P. R. China
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Elahi E, Ahmad M, Dahshan A, Rabeel M, Saleem S, Nguyen VH, Hegazy HH, Aftab S. Contemporary innovations in two-dimensional transition metal dichalcogenide-based P-N junctions for optoelectronics. NANOSCALE 2023; 16:14-43. [PMID: 38018395 DOI: 10.1039/d3nr04547a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
Two-dimensional transition metal dichalcogenides (2D-TMDCs) with various physical characteristics have attracted significant interest from the scientific and industrial worlds in the years following Moore's law. The p-n junction is one of the earliest electrical components to be utilized in electronics and optoelectronics, and modern research on 2D materials has renewed interest in it. In this regard, device preparation and application have evolved substantially in this decade. 2D TMDCs provide unprecedented flexibility in the construction of innovative p-n junction device designs, which is not achievable with traditional bulk semiconductors. It has been investigated using 2D TMDCs for various junctions, including homojunctions, heterojunctions, P-I-N junctions, and broken gap junctions. To achieve high-performance p-n junctions, several issues still need to be resolved, such as developing 2D TMDCs of superior quality, raising the rectification ratio and quantum efficiency, and successfully separating the photogenerated electron-hole pairs, among other things. This review comprehensively details the various 2D-based p-n junction geometries investigated with an emphasis on 2D junctions. We investigated the 2D p-n junctions utilized in current rectifiers and photodetectors. To make a comparison of various devices easier, important optoelectronic and electronic features are presented. We thoroughly assessed the review's prospects and challenges for this emerging field of study. This study will serve as a roadmap for more real-world photodetection technology applications.
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Affiliation(s)
- Ehsan Elahi
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea.
| | - Muneeb Ahmad
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - A Dahshan
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - Muhammad Rabeel
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - Sidra Saleem
- Division of Science Education, Department of Energy Storage/Conversion Engineering for Graduate School, Jeonbuk National University, Jeonju, Jeonbuk 54896, Republic of Korea
| | - Van Huy Nguyen
- Department of Nanotechnology and Advanced Materials Engineering, and H.M.C., Sejong University, Seoul 05006, South Korea
| | - H H Hegazy
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
- Research Centre for Advanced Materials Science (RCAMS), King Khalid University, P. O. Box 9004, Abha 61413, Saudi Arabia
| | - Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul, 05006 South Korea.
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Wang Y, Liu C, Qian H, Liu H, Han L, Wang X, Gao W, Li J. Light-triggered 2D electron gas in a GaN-based HEMT with sandwiched p-GaN layers. OPTICS LETTERS 2023; 48:4376-4379. [PMID: 37582036 DOI: 10.1364/ol.499084] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Accepted: 07/25/2023] [Indexed: 08/17/2023]
Abstract
In this work, a p-n junction-coupled metal-insulator-semiconductor (MIS) normally-off high-electron-mobility transistor (HEMT) UVPD is proposed. A two-dimensional electron gas (2DEG) at the AlN/U-GaN interface is entirely depleted with a dark current of 1.97 × 10-11 A because of the design of the sandwiched p-GaN layers. Under 365 nm illumination, the 2DEG is light triggered at Vds = 1 V with a high light on/off ratio of over 107 at a light power density of 286.39 mW·cm-2. Meanwhile, it exhibits fast rise and decay times of 248.39 and 584.79 µs, respectively. Moreover, a maximum responsivity (R) of 2.33 A/W, a maximum EQE of 793%, and a D* of 1.08 × 1013 Jones are obtained at Vds = 1 V. This can be attributed to the built-in electric fields in the configuration, which accelerate the flow of photogenerated carriers into the AlN/U-GaN channel. Additionally, the device showcases stable durability, repeatability, and a low driving voltage, making it highly suitable for applications in UV communication and space exploration.
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Zheng T, Yang M, Pan Y, Zheng Z, Sun Y, Li L, Huo N, Luo D, Gao W, Li J. Self-Powered Photodetector with High Efficiency and Polarization Sensitivity Enabled by WSe 2/Ta 2NiSe 5/WSe 2 van der Waals Dual Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37294943 DOI: 10.1021/acsami.3c04147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Self-powered photodetectors have triggered widespread attention because of the requirement of Internet of Things (IoT) application and low power consumption. However, it is challenging to simultaneously implement miniaturization, high quantum efficiency, and multifunctionalization. Here, we report a high-efficiency and polarization-sensitive photodetector enabled by two-dimensional (2D) WSe2/Ta2NiSe5/WSe2 van der Waals (vdW) dual heterojunctions (DHJ) along with a sandwich-like electrode pair. On account of enhanced light collection efficiency and two opposite built-in electric fields at the hetero-interfaces, the DHJ device achieves not only a broadband spectral response of 400-1550 nm but outstanding performance under 635 nm light illumination including an ultrahigh external quantum efficiency (EQE) of 85.5%, a pronounced power conversion efficiency (PCE) of 1.9%, and a fast response speed of 420/640 μs, which is much better than that of the WSe2/Ta2NiSe5 single heterojunction (SHJ). Significantly, based on the strong in-plane anisotropy of 2D Ta2NiSe5 nanosheets, the DHJ device shows competitive polarization sensitivities of 13.9 and 14.8 under 635 and 808 nm light, respectively. Furthermore, an excellent self-powered visible imaging capability based on the DHJ device is demonstrated. These results pave a promising platform for realizing self-powered photodetectors with high performance and multifunctionality.
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Affiliation(s)
- Tao Zheng
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Yuan Pan
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Zhaoqiang Zheng
- College of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Yiming Sun
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Ling Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Dongxiang Luo
- Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Jingbo Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
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Yan J, Yang X, Liu X, Du C, Qin F, Yang M, Zheng Z, Li J. Van der Waals Heterostructures With Built-In Mie Resonances For Polarization-Sensitive Photodetection. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2207022. [PMID: 36683160 PMCID: PMC10037953 DOI: 10.1002/advs.202207022] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Revised: 12/28/2022] [Indexed: 06/17/2023]
Abstract
Few-layer transition metal dichalcogenides (TMDs) and their combination as van der Waals heterostructures provide a promising platform for high-performance optoelectronic devices. However, the ultrathin thickness of TMD flakes limits efficient light trapping and absorption, which triggers the hybrid construction with optical resonant cavities for enhanced light absorption. The optical structure enriched photodetectors can also be wavelength- and polarization-sensitive but require complicated fabrication. Herein, a new-type TMD-based photodetector embedded with nanoslits is proposed to enhance light trapping. Taking ReS2 as an example, strong anisotropic Mie-type optical responses arising from the intrinsic in-plane anisotropy and nanoslit-enhanced anisotropy are discovered. Owing to the nanoslit-enhanced optical resonances and band engineering, excellent photodetection performances are demonstrated with high responsivity of 27 A W-1 and short rise/decay times of 3.7/3.7 ms. More importantly, through controlling the angle between the nanoslit orientation and the polarization direction to excite different resonant modes, polarization-sensitive photodetectors with anisotropy ratios from 5.9 to 12.6 can be achieved, representing one of the most polarization-sensitive TMD-based photodetectors. The depth and orientation of nanoslits are demonstrated crucial for optimizing the anisotropy ratio. The findings bring an effective scheme to construct high-performance and polarization-sensitive photodetectors.
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Affiliation(s)
- Jiahao Yan
- Institute of NanophotonicsJinan UniversityGuangzhou511443P. R. China
| | - Xinzhu Yang
- Institute of NanophotonicsJinan UniversityGuangzhou511443P. R. China
| | - Xinyue Liu
- Institute of NanophotonicsJinan UniversityGuangzhou511443P. R. China
| | - Chun Du
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and CommunicationsInstitute of Photonics TechnologyJinan UniversityGuangzhou511443P. R. China
| | - Fei Qin
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and CommunicationsInstitute of Photonics TechnologyJinan UniversityGuangzhou511443P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Information Photonics TechnologySchool of Materials and EnergyGuangdong University of TechnologyGuangzhou510006P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics TechnologySchool of Materials and EnergyGuangdong University of TechnologyGuangzhou510006P. R. China
| | - Jingbo Li
- Institute of SemiconductorsSouth China Normal UniversityGuangzhou510631P. R. China
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