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Bach TPA, Cho S, Kim H, Nguyen DA, Im H. 2D van der Waals Heterostructure with Tellurene Floating-Gate for Wide Range and Multi-Bit Optoelectronic Memory. ACS NANO 2024; 18:4131-4139. [PMID: 38206068 DOI: 10.1021/acsnano.3c08567] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
Intensive research on optoelectronic memory (OEM) devices based on two-dimensional (2D) van der Waals heterostructures (vdWhs) is being conducted due to their distinctive advantages for electrical-optical writing and multilevel storage. These features make OEM a promising candidate for the logic of reconfigurable operations. However, the realization of nonvolatile OEM with broadband absorption (from visible to infrared) and a high switching ratio remains challenging. Herein, we report a nonvolatile OEM based on a heterostructure consisting of rhenium disulfide (ReS2), hexagonal boron nitride (hBN) and tellurene (2D Te). The 2D Te-based floating-gate (FG) device exhibits excellent performance metrics, including a high switching on/off ratio (∼106), significant endurance (>1000 cycles) and impressive retention (>104 s). In addition, the narrow band gap of 2D Te endows the device with broadband optical programmability from the visible to near-infrared regions at room temperature. Moreover, by applying different gate voltages, light wavelengths, and laser powers, multiple bits can be successfully generated. Additionally, the device is specifically designed to enable reconfigurable inverter logic circuits (including AND and OR gates) through controlled electrical and optical inputs. These significant findings demonstrate that the 2D vdWhs with a 2D Te FG are a valuable approach in the development of high-performance OEM devices.
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Affiliation(s)
- Thi Phuong Anh Bach
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
| | - Sangeun Cho
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
| | - Hyungsang Kim
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
| | - Duc Anh Nguyen
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
| | - Hyunsik Im
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
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2
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Parappurath A, Ghawri B, Bhowmik S, Singha A, Watanabe K, Taniguchi T, Ghosh A. Band structure sensitive photoresponse in twisted bilayer graphene proximitized with WSe 2. NANOSCALE 2023; 15:18818-18824. [PMID: 37962416 DOI: 10.1039/d3nr04864k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/15/2023]
Abstract
The ability to tune the twist angle between different layers of two-dimensional (2D) materials has enabled the creation of electronic flat bands artificially, leading to exotic quantum phases. When a twisted blilayer of graphene (tBLG) is placed at the van der Waals proximity to a semiconducting layer of transition metal dichalcogenide (TMDC), such as WSe2, the emergent phases in the tBLG can fundamentally modify the functionality of such heterostructures. Here we have performed photoresponse measurements in few-layer-WSe2/tBLG heterostructure, where the mis-orientation angle of the tBLG layer was chosen to lie close to the magic angle of 1.1°. Our experiments show that the photoresponse is extremely sensitive to the band structure of tBLG and gets strongly suppressed when the Fermi energy was placed within the low-energy moiré bands. Photoresponse could however be recovered when Fermi energy exceeded the moiré band edge where it was dominated by the photogating effect due to transfer of charge between the tBLG and the WSe2 layers. Our observations suggest the possibility of the screening effects from moiré flat bands that strongly affect the charge transfer process at the WSe2/tBLG interface, which is further supported by time-resolved photo-resistance measurements.
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Affiliation(s)
- Aparna Parappurath
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India.
| | - Bhaskar Ghawri
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India.
| | - Saisab Bhowmik
- Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Arup Singha
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India.
| | - K Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - T Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Arindam Ghosh
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India.
- Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560 012, India
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3
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Wang C, Wu Q, Ding Y, Zhang X, Wang W, Guo X, Ni Z, Lin L, Cai Z, Gu X, Xiao S, Nan H. High-Responsivity and Broadband MoS 2 Photodetector Using Interfacial Engineering. ACS APPLIED MATERIALS & INTERFACES 2023; 15:46236-46246. [PMID: 37729386 DOI: 10.1021/acsami.3c09322] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/22/2023]
Abstract
Combining MoS2 with mature silicon technology is an effective method for preparing high-performance photodetectors. However, the previously studied MoS2/silicon-based heterojunction photodetectors cannot simultaneously demonstrate high responsivity, a fast response time, and broad spectral detection. We constructed a broad spectral n-type MoS2/p-type silicon-based heterojunction photodetector. The SiO2 dielectric layer on the silicon substrate was pretreated with soft plasma to change its thickness and surface state. The pretreated SiO2 dielectric layer and the silicon substrate constitute a multilayer heterostructure with a high carrier concentration and responsiveness. Taking silicon-based and n-type MoS2 heterojunction photodetectors as examples, its responsivity can reach 4.05 × 104 A W1- at 637 nm wavelength with a power density of 2 μW mm-2, and the detectable spectral range is measured from 447 to 1600 nm. This pretreated substrate was proven applicable to other n-type TMDCs, such as MoTe2, ReS2, etc., with certain versatility.
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Affiliation(s)
- Chenglin Wang
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China
| | - Qianqian Wu
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China
| | - Yang Ding
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China
| | - Xiumei Zhang
- School of Science, Jiangnan University, Wuxi 214122, China
| | - Wenhui Wang
- School of Physics and Key Laboratory of MEMS of the Ministry of Education Southeast University, Nanjing 21189, China
| | - Xitao Guo
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang 330013, China
| | - Zhenhua Ni
- School of Physics and Key Laboratory of MEMS of the Ministry of Education Southeast University, Nanjing 21189, China
| | - Liangliang Lin
- School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, China
| | - Zhengyang Cai
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China
| | - Xiaofeng Gu
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China
| | - Shaoqing Xiao
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China
| | - Haiyan Nan
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China
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Zhang ZW, Yang Y, Wu H, Zhang T. Advances in the two-dimensional layer materials for cancer diagnosis and treatment: unique advantages beyond the microsphere. Front Bioeng Biotechnol 2023; 11:1278871. [PMID: 37840663 PMCID: PMC10576562 DOI: 10.3389/fbioe.2023.1278871] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/17/2023] [Accepted: 09/15/2023] [Indexed: 10/17/2023] Open
Abstract
In recent years, two-dimensional (2D) layer materials have shown great potential in the field of cancer diagnosis and treatment due to their unique structural, electronic, and chemical properties. These non-spherical materials have attracted increasing attention around the world because of its widely used biological characteristics. The application of 2D layer materials like lamellar graphene, transition metal dichalcogenides (TMDs), and black phosphorus (BPs) and so on have been developed for CT/MRI imaging, serum biosensing, drug targeting delivery, photothermal therapy, and photodynamic therapy. These unique applications for tumor are due to the multi-variable synthesis of 2D materials and the structural characteristics of good ductility different from microsphere. Based on the above considerations, the application of 2D materials in cancer is mainly carried out in the following three aspects: 1) In terms of accurate and rapid screening of tumor patients, we will focus on the enrichment of serum markers and sensitive signal transformation of 2D materials; 2) The progress of 2D nanomaterials in tumor MRI and CT imaging was described by comparing the performance of traditional contrast agents; 3) In the most important aspect, we will focus on the progress of 2D materials in the field of precision drug delivery and collaborative therapy, such as photothermal ablation, sonodynamic therapy, chemokinetic therapy, etc. In summary, this review provides a comprehensive overview of the advances in the application of 2D layer materials for tumor diagnosis and treatment, and emphasizes the performance difference between 2D materials and other types of nanoparticles (mainly spherical). With further research and development, these multifunctional layer materials hold great promise in the prospects, and challenges of 2D materials development are discussed.
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Affiliation(s)
- Zheng-Wei Zhang
- Department of Hepatopancreatobiliary Surgery, Xinghua People’s Hospital, Yangzhou University, Xinghua, Jiangsu, China
| | - Yang Yang
- Department of Hepatobiliary Surgery, Eastern Hepatobiliary Surgery Hospital, Naval Medical University, Shanghai, China
- Department of Hepatopancreatobiliary Surgery, The Third Affiliated Hospital of Soochow University, Changzhou, Jiangsu, China
| | - Han Wu
- Department of Hepatobiliary Surgery, Eastern Hepatobiliary Surgery Hospital, Naval Medical University, Shanghai, China
| | - Tong Zhang
- Department of Hepatopancreatobiliary Surgery, Xinghua People’s Hospital, Yangzhou University, Xinghua, Jiangsu, China
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Yu H, Shang Y, Hu Y, Pei L, Zhang G. Transport Property of Wrinkled Graphene Nanoribbon Tuned by Spin-Polarized Gate Made of Vanadium-Benzene Nanowire. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2270. [PMID: 37570586 PMCID: PMC10421401 DOI: 10.3390/nano13152270] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2023] [Revised: 08/01/2023] [Accepted: 08/03/2023] [Indexed: 08/13/2023]
Abstract
A series of four-terminal V7(Bz)8-WGNR devices were established with wrinkled graphene nanoribbon (WGNR) and vanadium-benzene nanowire (V7(Bz)8). The spin-polarized V7(Bz)8 as the gate channel was placed crossing the plane, the concave (endo-positioned) and the convex (endo-positioned) surface of WGNR with different curvatures via Van der Waals interaction. The density functional theory (DFT) and nonequilibrium Green's function (NEGF) methods were adopted to calculate the transport properties of these devices at various bias voltages (VS) and gate voltages (VG), such as the conductance, spin-polarized currents, transmission spectra (TS), local density of states (LDOS), and scattering states. The results indicate that the position of V7(Bz)8 and the bending curvature of WGNR play important roles in tuning the transport properties of these four-terminal devices. A spin-polarized transport property is induced for these four-terminal devices by the spin-polarized nature of V7(Bz)8. Particularly, the down-spin channel disturbs strongly on the source-to-drain conductance of WGNR when V7(Bz)8 is endo-positioned crossing the WGNR. Our findings on the novel property of four-terminal V7(Bz)8-WGNR devices provide useful guidelines for achieving flexible graphene-based electronic nanodevices by attaching other similar multidecker metal-arene nanowires.
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Affiliation(s)
| | - Yan Shang
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, China; (H.Y.); (Y.H.); (L.P.)
| | | | | | - Guiling Zhang
- School of Materials Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150080, China; (H.Y.); (Y.H.); (L.P.)
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Masanta S, Nayak C, Agarwal P, Das K, Singha A. Monolayer Graphene-MoSSe van der Waals Heterostructure for Highly Responsive Gate-Tunable Near-Infrared-Sensitive Broadband Fast Photodetector. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 36880873 DOI: 10.1021/acsami.2c20707] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Transition metal dichalcogenides (TMDCs) are potential two-dimentional materials as natural partners of graphene for highly responsive van der Waals (vdW) heterostructure photodetectors. However, the spectral detection range of the detectors is limited by the optical bandgap of the TMDC, which acts as a light-absorbing medium. Bandgap engineering by making alloy TMDC has evolved as a suitable approach for the development of wide-band photodetectors. Here, broadband (visible to near-infrared) photodetection with high sensitivity in the near-infrared region is demonstrated in a MoSSe/graphene heterostructure. In the ambient environment, the photodetector exhibits high responsivity of 0.6 × 102 A/W and detectivity of 7.9 × 1011 Jones at 800 nm excitation with a power density of 17 fW/μm2 and 10 mV source-drain bias. The photodetector shows appreciable responsivity in self-bias mode due to nonuniform distribution of MoSSe flakes on the graphene layer between the source and drain end and the asymmetry between the two electrodes. Time-dependent photocurrent measurements show fast rise/decay times of ∼38 ms/∼48 ms. A significant gate tunability on the efficiency of the detector has been demonstrated. The device is capable of low power detection and exhibits high operational frequency, gain, and bandwidth. Thus, the MoSSe/graphene heterostructure can be a promising candidate as a high-speed and highly sensitive near-infrared photodetector capable of operating at ambient conditions with low energy consumption.
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Affiliation(s)
- Suvadip Masanta
- Department of Physics, Bose Institute, 93/1 Acharya Prafulla Chandra Road, Kolkata 700009, India
| | - Chumki Nayak
- Department of Physics, Bose Institute, 93/1 Acharya Prafulla Chandra Road, Kolkata 700009, India
| | - Pooja Agarwal
- Saha Institute of Nuclear Physics, HBNI, Kolkata 700064, India
| | - Kaustuv Das
- Department of Physics, Jadavpur University, Kolkata 700032, India
| | - Achintya Singha
- Department of Physics, Bose Institute, 93/1 Acharya Prafulla Chandra Road, Kolkata 700009, India
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Zeng L, Zhang S, Yao L, Bi Z, Zhang Y, Kang P, Yan J, Zhang Z, Yun J. A type-II NGyne/GaSe heterostructure with high carrier mobility and tunable electronic properties for photovoltaic application. NANOTECHNOLOGY 2022; 34:065702. [PMID: 36356303 DOI: 10.1088/1361-6528/aca1cc] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Accepted: 11/10/2022] [Indexed: 06/16/2023]
Abstract
The two-dimensional heterostructures with type-II band alignment and super-high carrier mobility offer an updated perspective for photovoltaic devices. Here, based on the first-principles calculation, a novel vertical NGyne/GaSe heterostructure with an intrinsic type-II band alignment, super-high carrier mobility (104cm2V-1s-1), and strong visible to ultraviolet light absorption (104-105cm-1) is constructed. We investigate the electronic structure and the interfacial properties of the NGyne/GaSe heterostructure under electric field and strain. The band offsets and band gap of the NGyne/GaSe heterostructure can be regulated under applied vertical electric field and strain efficiently. Further study reveals that the photoelectric conversion efficiency of the NGyne/GaSe heterostructure is vastly improved under a negative electric field and reaches up to 25.09%. Meanwhile, near-free electron states are induced under a large applied electric field, leading to the NGyne/GaSe heterostructure transform from semiconductors to metal. Our results indicate that the NGyne/GaSe heterostructure will have extremely potential in optoelectronic devices, especially solar cells.
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Affiliation(s)
- Liru Zeng
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
| | - Siyu Zhang
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
| | - Linwei Yao
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
| | - Zhisong Bi
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
| | - Yanni Zhang
- College of Physics & Electronic Engineering, Xianyang Normal University, Xianyang, 712000, People's Republic of China
| | - Peng Kang
- Department of Physics, McGill University, Montreal, Quebec H3A 2T8, Canada
| | - Junfeng Yan
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
| | - Zhiyong Zhang
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
| | - Jiangni Yun
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
- Department of Physics, McGill University, Montreal, Quebec H3A 2T8, Canada
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