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He Y, Dong H, Chen C, Hao F, Long F, Wang J, Zuo C, Ding L. Synergistic Modification for Efficient Perovskite Solar Cells with Small Voltage Loss. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37882603 DOI: 10.1021/acsami.3c10430] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/27/2023]
Abstract
The power conversion efficiency (PCE) of perovskite solar cells has improved quickly in the past few years, but the PCE is still much lower than the theoretical limit. The relatively high energy loss (Eloss) is one of the critical factors limiting the PCE. To resolve the above issues, a synergistic modification strategy was used herein to minimize Eloss. RbCl and potassium polyacrylate (K-PAM) were used to modify the SnO2 layer. Additionally, Pb(Ac)2 was introduced into PbI2 to further improve the film quality. The synergistic modification strategy reduced the defects in SnO2 and perovskite and improved the energy-level alignment, enabling significantly reduced Eloss and enhanced photovoltaic performance. The best PCE of 24.07% was achieved, which was much higher than that of the control device (20.86%). The Eloss was only 0.349 eV for the target device. Good stability was achieved for the cells made using modified SnO2 and perovskite layers.
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Affiliation(s)
- You He
- Guangxi Key Laboratory of Optical and Electronic Materials and Devices, Guilin University of Technology, Guilin 541004, China
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing 100190, China
| | - Hua Dong
- School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Cong Chen
- School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Feng Hao
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Fei Long
- Guangxi Key Laboratory of Optical and Electronic Materials and Devices, Guilin University of Technology, Guilin 541004, China
| | - Jilin Wang
- Guangxi Key Laboratory of Optical and Electronic Materials and Devices, Guilin University of Technology, Guilin 541004, China
| | - Chuantian Zuo
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing 100190, China
- Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, Jianghan University, Wuhan 430056, China
| | - Liming Ding
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing 100190, China
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Zhang X, Zhou Y, Chen M, Wang D, Chao L, Lv Y, Zhang H, Xia Y, Li M, Hu Z, Chen Y. Novel Bilayer SnO 2 Electron Transport Layers with Atomic Layer Deposition for High-Performance α-FAPbI 3 Perovskite Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303254. [PMID: 37226363 DOI: 10.1002/smll.202303254] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2023] [Indexed: 05/26/2023]
Abstract
Perovskite solar cells (PSCs) based on the SnO2 electron transport layer (ETL) have achieved remarkable photovoltaic efficiency. However, the commercial SnO2 ETLs show various shortcomings. The SnO2 precursor is prone to agglomeration, resulting in poor morphology with numerous interface defects. Additionally, the open circuit voltage (Voc ) would be constrained by the energy level mismatch between the SnO2 and the perovskite. And, few studies designed SnO2 -based ETLs to promote crystal growth of PbI2 , a crucial prerequisite for obtaining high-quality perovskite films via the two-step method. Herein, we proposed a novel bilayer SnO2 structure that combined the atomic layer deposition (ALD) and sol-gel solution to well address the aforementioned issues. Due to the unique conformal effect of ALD-SnO2 , it can effectively modulate the roughness of FTO substrate, enhance the quality of ETL, and induce the growth of PbI2 crystal phase to develop the crystallinity of perovskite layer. Furthermore, a created built-in field of the bilayer SnO2 can help to overcome the electron accumulation at the ETL/perovskite interface, leading to a higher Voc and fill factor. Consequently, the efficiency of PSCs with ionic liquid solvent increases from 22.09% to 23.86%, maintaining 85% initial efficiency in a 20% humidity N2 environment for 1300 h.
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Affiliation(s)
- Xuecong Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
| | - Yan Zhou
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
| | - Muyang Chen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
| | - Dianxi Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
| | - Lingfeng Chao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
| | - Yifan Lv
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
| | - Hui Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
| | - Yingdong Xia
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
| | - Mingjie Li
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, Guangdong, 518057, China
| | - Zhelu Hu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
| | - Yonghua Chen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University, Nanjing, 211816, China
- Optics Valley Laboratory, Wuhan, 430074, China
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MDACl2-Modified SnO2 Film for Efficient Planar Perovskite Solar Cells. Molecules 2023; 28:molecules28062668. [PMID: 36985640 PMCID: PMC10056177 DOI: 10.3390/molecules28062668] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2023] [Revised: 03/13/2023] [Accepted: 03/14/2023] [Indexed: 03/17/2023] Open
Abstract
The electron transport layer (ETL) with excellent charge extraction and transport ability is one of the key components of high-performance perovskite solar cells (PSCs). SnO2 has been considered as a more promising ETL for the future commercialization of PSCs due to its excellent photoelectric properties and easy processing. Herein, we propose a facile and effective ETL modification strategy based on the incorporation of methylenediammonium dichloride (MDACl2) into the SnO2 precursor colloidal solution. The effects of MDACl2 incorporation on charge transport, defect passivation, perovskite crystallization, and PSC performance are systematically investigated. First, the surface defects of the SnO2 film are effectively passivated, resulting in the increased conductivity of the SnO2 film, which is conducive to electron extraction and transport. Second, the MDACl2 modification contributes to the formation of high-quality perovskite films with improved crystallinity and reduced defect density. Furthermore, a more suitable energy level alignment is achieved at the ETL/perovskite interface, which facilitates the charge transport due to the lower energy barrier. Consequently, the MDACl2-modified PSCs exhibit a champion efficiency of 22.30% compared with 19.62% of the control device, and the device stability is also significantly improved.
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