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Wang H, Li W, Gloginjić M, Petrović S, Krupska TV, Turov VV, Zhao J, Yang W, Du Z, Chen S. High-Sensitivity Photoelectrochemical Ultraviolet Photodetector with Stable pH-Universal Adaptability Based on Whole Single-Crystal Integrated Self-Supporting 4H-SiC Nanoarrays. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2400045. [PMID: 38453678 DOI: 10.1002/smll.202400045] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2024] [Revised: 02/28/2024] [Indexed: 03/09/2024]
Abstract
Emerging photoelectrochemical (PEC) photodetectors (PDs) have notable advantages over conventional PDs and have attracted extensive attention. However, harsh liquid environments, such as those with high corrosivity and attenuation, substantially restrict their widespread application. Moreover, most PEC PDs are constructed by assembling numerous nanostructures on current collector substrates, which inevitably contain abundant interfaces and defects, thus greatly weakening the properties of PDs. To address these challenges, a high-performance pH-universal PEC ultraviolet (UV) PD based on a whole single-crystal integrated self-supporting 4H-SiC nanopore array photoelectrode is constructed, which is fabricated using a two-step anodic oxidation approach. The PD exhibits excellent photodetection behavior, with high responsivity (218.77 mA W-1), detectivity (6.64 × 1013 Jones), external quantum efficiency (72.47%), and rapid rise/decay times (17/48 ms) under 375 nm light illumination with a low intensity of 0.15 mW cm-2 and a bias voltage of 0.6 V, which is fall in the state-of-the-art of the wide-bandgap semiconductor-based PDs reported thus far. Furthermore, the SiC PEC PD exhibits excellent photoresponse and long-term operational stability in pH-universal liquid environments. The improved photodetection performance of the SiC PEC PD is primarily attributed to the synergistic effect of the nanopore array structure, integrated self-supporting configuration, and single-crystal structure of the whole photoelectrode.
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Affiliation(s)
- Hulin Wang
- School of Resources, Environment and Materials, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, P. R. China
- School of Physical Science and Technology, Guangxi University, Nanning, 530004, P. R. China
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
| | - Weijun Li
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
| | - Marko Gloginjić
- Laboratory of Physics, Vinča Institute of Nuclear Sciences-National Institute of the Republic of Serbia, University of Belgrade, Belgrade, 11351, Serbia
| | - Srdjan Petrović
- Laboratory of Physics, Vinča Institute of Nuclear Sciences-National Institute of the Republic of Serbia, University of Belgrade, Belgrade, 11351, Serbia
| | - Tetyana V Krupska
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
- Department of Nanoporous and Nanosized Carbon Materials, O. Chuiko Institute of Surface Chemistry, NASU, Kyiv, 03164, Ukraine
| | - Vladimir V Turov
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
- Department of Nanoporous and Nanosized Carbon Materials, O. Chuiko Institute of Surface Chemistry, NASU, Kyiv, 03164, Ukraine
| | - Jialong Zhao
- School of Physical Science and Technology, Guangxi University, Nanning, 530004, P. R. China
| | - Weiyou Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
| | - Zhentao Du
- School of Resources, Environment and Materials, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, P. R. China
| | - Shanliang Chen
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
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Hong S, Wu L, Xiao Z, Chen Y, Kuklin A, Liu H, Ågren H, Ren X, Zhang Y. Facile Exfoliation of Few-Layer Sn-Based Nanosheets for Self-Powered Photo-Electrochemical and All-Optical Modulation Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2404228. [PMID: 39075930 DOI: 10.1002/smll.202404228] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2024] [Revised: 07/12/2024] [Indexed: 07/31/2024]
Abstract
Few-layer tin (Sn)-based nanosheets (NSs) with a thickness of ≈2.5 nm are successfully prepared using a modified liquid phase exfoliation (LPE) method. Here the first exploration of photo-electrochemical (PEC) and nonlinear properties of Sn NSs is presented. The results demonstrate that the PEC properties are tunable under different experimental conditions. Additionally, Sn NSs are shown to exhibit a unique self-powered PEC performance, maintaining a good long-term stability for up to 1 month. Using electron spin resonance, active species, such as hydroxyl radicals (·OH), superoxide radicals (·O2 -), and holes (h+), are detected during operations, providing a deeper understanding of the working mechanism. Furthermore, measurements of nonlinear response reveal that Sn NSs can be effective for all-optical modulation, as it enables the realization of all-optical switching through excitation spatial cross-phase modulation (SXPM). These findings present new research insights and potential applications of Sn NSs in optoelectronics.
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Affiliation(s)
- Siyi Hong
- Lab of Optoelectronic Technology for Low Dimensional Nanomaterials, School of Chemistry and Chemical Engineering, University of South China, Hengyang, 421001, China
| | - Leiming Wu
- Advanced Institute of Photonics Technology, School of Information Engineering, Guangdong University of Technology, Guangzhou, 510006, China
| | - Zizhen Xiao
- Lab of Optoelectronic Technology for Low Dimensional Nanomaterials, School of Chemistry and Chemical Engineering, University of South China, Hengyang, 421001, China
| | - Yinxiang Chen
- Lab of Optoelectronic Technology for Low Dimensional Nanomaterials, School of Chemistry and Chemical Engineering, University of South China, Hengyang, 421001, China
| | - Artem Kuklin
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala, SE-751 20, Sweden
| | - Huating Liu
- School of Electrical and Electronic Engineering, Wuhan Polytechnic University, Wuhan, 430023, China
| | - Hans Ågren
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala, SE-751 20, Sweden
| | - Xiaohui Ren
- The State Key Laboratory of Refractories and Metallurgy, Key Laboratory for Ferous Metalurgy and Resources Utilization of Ministry of Education & Hubei Provincial Key Laboratory for New Processes of Ironmaking and Steel making, Faculty of Materials, Wuhan University of Science and Technology, Wuhan, 430081, China
| | - Ye Zhang
- Lab of Optoelectronic Technology for Low Dimensional Nanomaterials, School of Chemistry and Chemical Engineering, University of South China, Hengyang, 421001, China
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Zhang X, Li H, Wang G, Wang S, Li J, Song J, Jin M, Zhou J, Chang P, Pan X. Ag-modified enhance the performances of ZnO@CFs based omnidirectional photoelectrochemical ultraviolet detectors. NANOTECHNOLOGY 2024; 35:325204. [PMID: 38701762 DOI: 10.1088/1361-6528/ad4711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2024] [Accepted: 05/03/2024] [Indexed: 05/05/2024]
Abstract
There are several prospective applications for omnidirectional ultraviolet (UV) detectors and underwater detection detectors in optical systems and optical fields. In this work, ZnO nanorods arrays were grown on carbon fibers (CFs). An appropriate amount of Ag nanoparticles (NPs) was deposited on the surface of ZnO nanorods by photochemical deposition. This improved the performance of photoelectrochemical (PEC) based UV detectors. Under 365 nm and 10 mW cm-2UV irradiation, the photocurrent density of the 30s-Ag/ZnO@CFs based PEC UV detector can reach 1.28 mA cm-2, which is about 7 times that of the ZnO@CFs based PEC UV detector, and the rising time is shortened from 0.17 to 0.10 s. The reason is that increased absorption of ultraviolet light induced by the localized surface plasmon resonance. In addition, the detector exhibits a good flexibility and remains flexible after hundreds of bends and twists. Moreover, the detector is responsive in the range of rotation angle from 0° to 360°. It provides an insight to improve the photoelectric performance and underwater omnidirectional detection ability of the PEC UV detector.
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Affiliation(s)
- Xinmiao Zhang
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Hongye Li
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Gang Wang
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Shimin Wang
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Jiang Li
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Jianqiao Song
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Mengjing Jin
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Jinyuan Zhou
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Peng Chang
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Xiaojun Pan
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
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Li L, Fang S, Chen W, Li Y, Vafadar MF, Wang D, Kang Y, Liu X, Luo Y, Liang K, Dang Y, Zhao L, Zhao S, Yin Z, Sun H. Facile Semiconductor p-n Homojunction Nanowires with Strategic p-Type Doping Engineering Combined with Surface Reconstruction for Biosensing Applications. NANO-MICRO LETTERS 2024; 16:192. [PMID: 38743197 PMCID: PMC11093954 DOI: 10.1007/s40820-024-01394-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2024] [Accepted: 03/11/2024] [Indexed: 05/16/2024]
Abstract
Photosensors with versatile functionalities have emerged as a cornerstone for breakthroughs in the future optoelectronic systems across a wide range of applications. In particular, emerging photoelectrochemical (PEC)-type devices have recently attracted extensive interest in liquid-based biosensing applications due to their natural electrolyte-assisted operating characteristics. Herein, a PEC-type photosensor was carefully designed and constructed by employing gallium nitride (GaN) p-n homojunction semiconductor nanowires on silicon, with the p-GaN segment strategically doped and then decorated with cobalt-nickel oxide (CoNiOx). Essentially, the p-n homojunction configuration with facile p-doping engineering improves carrier separation efficiency and facilitates carrier transfer to the nanowire surface, while CoNiOx decoration further boosts PEC reaction activity and carrier dynamics at the nanowire/electrolyte interface. Consequently, the constructed photosensor achieves a high responsivity of 247.8 mA W-1 while simultaneously exhibiting excellent operating stability. Strikingly, based on the remarkable stability and high responsivity of the device, a glucose sensing system was established with a demonstration of glucose level determination in real human serum. This work offers a feasible and universal approach in the pursuit of high-performance bio-related sensing applications via a rational design of PEC devices in the form of nanostructured architecture with strategic doping engineering.
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Affiliation(s)
- Liuan Li
- iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Shi Fang
- iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Wei Chen
- iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Yueyue Li
- Department of Obstetrics and Gynecology, The First Affiliated Hospital of Anhui Medical University, No 218 Jixi Road, Hefei, 230022, People's Republic of China
| | - Mohammad Fazel Vafadar
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC, H3A 0E9, Canada
| | - Danhao Wang
- iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Yang Kang
- iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Xin Liu
- iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Yuanmin Luo
- iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Kun Liang
- iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Yiping Dang
- Union Hospital, Tongji Medical College, Huazhong University of Science and Technology, No 1277 Jiefang Ave., Wuhan, 430022, People's Republic of China
| | - Lei Zhao
- Union Hospital, Tongji Medical College, Huazhong University of Science and Technology, No 1277 Jiefang Ave., Wuhan, 430022, People's Republic of China
| | - Songrui Zhao
- Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC, H3A 0E9, Canada
| | - Zongzhi Yin
- Department of Obstetrics and Gynecology, The First Affiliated Hospital of Anhui Medical University, No 218 Jixi Road, Hefei, 230022, People's Republic of China.
| | - Haiding Sun
- iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, People's Republic of China.
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Zhang N, Cui M, Zhou J, Shao Z, Gao X, Liu J, Sun R, Zhang Y, Li W, Li X, Yao J, Gao F, Feng W. High-Performance Self-Powered Photoelectrochemical Ultraviolet Photodetectors Based on an In 2O 3 Nanocube Film. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19167-19174. [PMID: 38569197 DOI: 10.1021/acsami.4c00801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/05/2024]
Abstract
Ultraviolet photodetectors (UV PDs) have attracted significant attention due to their wide range of applications, such as underwater communication, biological analysis, and early fire warning systems. Indium oxide (In2O3) is a candidate for developing high-performance photoelectrochemical (PEC)-type UV PDs owing to its high UV absorption and good stability. However, the self-powered photoresponse of the previously reported In2O3-based PEC UV PDs is unsatisfactory. In this work, high-performance self-powered PEC UV PDs were constructed by using an In2O3 nanocube film (NCF) as a photoanode. In2O3 NCF photoanodes were synthesized on FTO by using hydrothermal methods with a calcining process. The influence of the electrolyte concentration, bias potential, and irradiation light on the photoresponse properties was systematically studied. In2O3 NCF PEC UV PDs exhibit outstanding self-powered photoresponses to 365 nm UV light with a high responsivity of 44.43 mA/W and fast response speed (20/30 ms) under zero bias potential, these results are superior to those of previously reported In2O3-based PEC UV PDs. The improved self-powered photoresponse is attributed to the higher photogenerated carrier separation efficiency and faster charge transport of the in-situ grown In2O3 NCF. In addition, these PDs exhibit excellent multicycle stability, maintaining the photocurrent at 98.69% of the initial value after 700 optical switching cycles. Therefore, our results prove the great promise of In2O3 in self-powered PEC UV PDs.
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Affiliation(s)
- Nana Zhang
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Mengqi Cui
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Junxin Zhou
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Zhitao Shao
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Xinyu Gao
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Jiaming Liu
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Ruyu Sun
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Yuan Zhang
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Wenhui Li
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Xinghan Li
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Jing Yao
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
| | - Feng Gao
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
| | - Wei Feng
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
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Wang Y, Zhang M, Wu W, Wang Z, Liu M, Yang T, Renqianzhuoma. Wide Response Range Photoelectrochemical UV Detector Based on Anodized TiO 2-Nanotubes@Ti@quartz Structure. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:439. [PMID: 38470770 DOI: 10.3390/nano14050439] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2024] [Revised: 02/21/2024] [Accepted: 02/24/2024] [Indexed: 03/14/2024]
Abstract
Conventional sandwich structure photoelectrochemical UV detectors cannot detect UV light below 300 nm due to UV filtering problems. In this work, we propose to place the electron collector inside the active material, thus avoiding the effect of electrodes on light absorption. We obtained a TiO2-nanotubes@Ti@quartz photoanode structure by precise treatment of a commercial Ti mesh by anodic oxidation. The structure can absorb any light in the near-UV band and has superior stability to other metal electrodes. The final encapsulated photoelectrochemical UV detectors exhibit good switching characteristics with a response time below 100 ms. The mechanism of the oxidation conditions on the photovoltaic performance of the device was investigated by the electrochemical impedance method, and we obtained the optimal synthesis conditions. Response tests under continuous spectroscopy confirm that the response range of the device is extended from 300-400 nm to 240-400 nm. This idea of a built-in collector is an effective way to extend the response range of a photoelectrochemical detector.
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Affiliation(s)
- Youqing Wang
- Research Center for Semiconductor Materials and Devices, Shaanxi University of Science and Technology, Xi'an 710021, China
| | - Miaomiao Zhang
- Research Center for Semiconductor Materials and Devices, Shaanxi University of Science and Technology, Xi'an 710021, China
| | - Wenxuan Wu
- Research Center for Semiconductor Materials and Devices, Shaanxi University of Science and Technology, Xi'an 710021, China
| | - Ze Wang
- Research Center for Semiconductor Materials and Devices, Shaanxi University of Science and Technology, Xi'an 710021, China
| | - Minghui Liu
- Research Center for Semiconductor Materials and Devices, Shaanxi University of Science and Technology, Xi'an 710021, China
- School of Mechatronic Engineering, Xi'an Technological University, Xi'an 710021, China
| | - Tiantian Yang
- Research Center for Semiconductor Materials and Devices, Shaanxi University of Science and Technology, Xi'an 710021, China
| | - Renqianzhuoma
- Research Center for Semiconductor Materials and Devices, Shaanxi University of Science and Technology, Xi'an 710021, China
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Zhao G, Mei B, Chen Y, Sun Z. Mist Chemical Vapor Deposition of Bi 13S 18I 2 for Photoelectrochemical-type Photodetection. Inorg Chem 2024; 63:3460-3466. [PMID: 38324539 DOI: 10.1021/acs.inorgchem.3c04171] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
Bismuth-based ternary compounds have attracted much attention owing to their various merits, such as low toxicity and tunable electrical and optical properties. However, these compounds are yet to be understood due to the lack of suitable targets limited by immature synthesis techniques. In this work, we aimed at the synthesis, properties investigation, and photodetection application of Bi13S18I2. Mist chemical vapor deposition was adopted for the deposition of the Bi13S18I2 thin film for the first time. The deposition mechanism was discussed from the perspective of crystal phase and surface morphology. Based on the Bi13S18I2 thin film synthesized at optimal temperature, we constructed a photoelectrochemical-type photodetector. The photodetection performance was evaluated from the points of electrolyte composition, working temperature, and bias voltage. This study would pave the way for the controllable synthesis and applications of bismuth-based ternary compounds.
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Affiliation(s)
- Guoxiao Zhao
- School of Materials Science and Engineering & State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Bingchu Mei
- School of Materials Science and Engineering & State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Yao Chen
- School of Materials Science and Engineering & State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Zaichun Sun
- School of Materials Science and Engineering & State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
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Zhang Y, Zhou R, Liu X, Bi Z, Ruan S, Ma Y, Li X, Liu C, Chen Y, Zhou J. Sol-Gel Synthesized Amorphous (In xGa 1-x) 2O 3 for UV Photodetection with High Responsivity. SENSORS (BASEL, SWITZERLAND) 2024; 24:787. [PMID: 38339504 PMCID: PMC10857313 DOI: 10.3390/s24030787] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2023] [Revised: 01/13/2024] [Accepted: 01/23/2024] [Indexed: 02/12/2024]
Abstract
β-Ga2O3 photodetectors have the advantages of low dark current and strong radiation resistance in UV detection. However, the limited photocurrent has restricted their applications. Herein, MSM UV photodetectors based on (InxGa1-x)2O3 (x = 0, 0.1, 0.2, 0.3) by a sol-gel method were fabricated and studied. The doping of indium ions in Ga2O3 leads to lattice distortion and promotes the formation of oxygen vacancies. The oxygen vacancies in (InxGa1-x)2O3 can be modulated by various proportions of indium, and the increased oxygen vacancies contribute to the enhancement of electron concentration. The results show that the amorphous In0.4Ga1.6O3 photodetector exhibited improved performances, including a high light-to-dark current ratio (2.8 × 103) and high responsivity (739.2 A/W). This work provides a promising semiconductor material In0.4Ga1.6O3 for high-performance MSM UV photodetectors.
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Affiliation(s)
- Yupeng Zhang
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, China; (Y.Z.); (R.Z.); (X.L.); (Z.B.); (Y.M.); (X.L.); (C.L.); (J.Z.)
| | - Ruiheng Zhou
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, China; (Y.Z.); (R.Z.); (X.L.); (Z.B.); (Y.M.); (X.L.); (C.L.); (J.Z.)
| | - Xinyan Liu
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, China; (Y.Z.); (R.Z.); (X.L.); (Z.B.); (Y.M.); (X.L.); (C.L.); (J.Z.)
| | - Zhengyu Bi
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, China; (Y.Z.); (R.Z.); (X.L.); (Z.B.); (Y.M.); (X.L.); (C.L.); (J.Z.)
| | - Shengping Ruan
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, China; (Y.Z.); (R.Z.); (X.L.); (Z.B.); (Y.M.); (X.L.); (C.L.); (J.Z.)
| | - Yan Ma
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, China; (Y.Z.); (R.Z.); (X.L.); (Z.B.); (Y.M.); (X.L.); (C.L.); (J.Z.)
| | - Xin Li
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, China; (Y.Z.); (R.Z.); (X.L.); (Z.B.); (Y.M.); (X.L.); (C.L.); (J.Z.)
| | - Caixia Liu
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, China; (Y.Z.); (R.Z.); (X.L.); (Z.B.); (Y.M.); (X.L.); (C.L.); (J.Z.)
| | - Yu Chen
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
| | - Jingran Zhou
- College of Electronic Science & Engineering, Jilin University, Changchun 130012, China; (Y.Z.); (R.Z.); (X.L.); (Z.B.); (Y.M.); (X.L.); (C.L.); (J.Z.)
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9
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Zhang J, Wang M, Li P, Sa Z, Liu F, Sun W, Li Y, Mu W, Jia Z, Chen M, Yang ZX. Toward Smart, Flexible, and Omnidirectional Self-Powered Photodetection by an All-Solution-Processed In 2O 3/Pbl 2 Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2024; 16:3685-3693. [PMID: 38226599 DOI: 10.1021/acsami.3c16106] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/17/2024]
Abstract
Amorphous In2O3 film is emerging as a promising oxide semiconductor for next-generation electronics and optoelectronics owing to high mobility and wide band gap. However, the persistent photocurrent phenomenon and high carrier concentration in amorphous In2O3 film are challenging the photodetection performances, resulting in a long response time and low Ilight/Idark ratio. In this work, the In2O3/PbI2 heterojunction is constructed by an all-solution synthesis process to inhibit the persistent photocurrent phenomenon and large dark current. Benefiting from the built-in electric field at the heterojunction interface, the In2O3/PbI2 heterojunction photodetector exhibits excellent self-powered photodetection performances with an ultralow dark current of 10-12 A, a high Ilight/Idark ratio of 104, and fast response times of 0.6/0.6 ms. Furthermore, the entire solution synthesis process and amorphous characteristics enable the fabrication of an In2O3/PbI2 heterojunction photodetector on arbitrary substrates to realize specific functions. When configured onto the polyimide substrate, the In2O3/PbI2 heterojunction photodetector shows excellent mechanical flexibility, bending endurance, and photoresponse stability. When implanted onto the transparent substrate, the In2O3/PbI2 heterojunction photodetector exhibits an outstanding omnidirectional self-powdered photodetection performance and imaging capability. All results pave the way for an all-solution-processed amorphous In2O3 film in advanced high-performance photodetectors.
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Affiliation(s)
- Jie Zhang
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Mingxu Wang
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Pengsheng Li
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Zixu Sa
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Fengjing Liu
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Wenzhang Sun
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Yang Li
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Wenxiang Mu
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
- Shenzhen Research Institute of Shandong University, Shenzhen 518057, China
| | - Zhitai Jia
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
- Shandong Research Institute of Industrial Technology, Jinan 250101, China
| | - Ming Chen
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Zai-Xing Yang
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
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10
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Shao Z, Qu L, Cui M, Yao J, Gao F, Feng W, Lu H. Achieving High-Performance Self-Powered Visible-Blind Ultraviolet Photodetection Using Alloy Engineering. ACS APPLIED MATERIALS & INTERFACES 2023; 15:43994-44000. [PMID: 37672724 DOI: 10.1021/acsami.3c08077] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/08/2023]
Abstract
The exploration and development of self-powered visible-blind ultraviolet photodetectors (VBUV PDs) with high responsivity and wavelength selectivity have far-reaching significance for versatile applications. Although In2O3 shows potential for UV detection due to good UV absorption and electrical transport properties, the poor wavelength selectivity impedes further application in VBUV PDs. Here, a self-powered photoelectrochemical-type (PEC) VBUV PD is demonstrated by using gallium-indium oxide alloys (Ga-In OAs). The self-powered Ga-In OAs-based PEC VBUV PDs exhibit good VBUV photodetection performance, including a high responsivity of 50.04 mA/W and a high detectivity of 6.03 × 1010 Jones under 254 nm light irradiation, a good wavelength selectivity (UV/visible light rejection ratio of 262.45), and a fast response time (0.45/0.38 s). The good self-powered VBUV detection performance of Ga-In OAs is attributed to the larger band gap and smaller charge-transfer resistance induced by alloy engineering, which not only suppresses the absorption of visible light but also accelerates interfacial charge transfer. Moreover, an underwater optical communication system is demonstrated by using the self-powered Ga-In OAs PEC VBUV PDs. This study demonstrates that alloy engineering is a powerful tool to improve the performance of In2O3-based PEC PDs, and Ga-In OAs have great application potential for underwater optoelectronic devices.
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Affiliation(s)
- Zhitao Shao
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Lihang Qu
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Mengqi Cui
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Jing Yao
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
| | - Feng Gao
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
| | - Wei Feng
- College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
| | - Huiqing Lu
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
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11
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Liu W, Li M, Yang C, Wang N, Huang W, Li R, Wang J. Spherulitic Crystallization of CsCu 2I 3 for High Performance Ultraviolet Photodetectors. J Phys Chem Lett 2023; 14:7854-7859. [PMID: 37626306 DOI: 10.1021/acs.jpclett.3c01851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/27/2023]
Abstract
Ternary copper halides have become promising materials for UV photodetection due to their stability and eco-friendliness. However, the uncontrollable crystallization induces high-concentration defects in these films, inherently limiting further improvement in device performance. Herein, we reveal the antisolvent-assisted crystallization kinetics mechanism of CsCu2I3 during the film-forming process. The nucleation rate is manipulated by adjusting precursor supersaturation using different antisolvents, resulting in decreased density and preferential orientation of the nuclei within the wet film. Subsequent annealing leads to a homogeneous and low-defect CsCu2I3 film with 40-μm-scale spherulites. A resulting visible-blind ultraviolet photodetector exhibits a responsivity of 8.73 A W-1, a specific detectivity of 5.28 × 1012 jones, and a response speed of 1.12 ms. The unencapsulated photodetector shows negligible degradation of responsivity in ambient air (∼70% humidity) for one month. Moreover, the flexible device with a responsivity of 420.2 mA W-1 and a detectivity of 1.18 × 1012 jones also shows excellent bending stability.
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Affiliation(s)
- Wenbo Liu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Mingda Li
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Chao Yang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Nana Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Renzhi Li
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
- Changzhou University, Changzhou 213164, China
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