1
|
Liu P, Sivakov V. Tin/Tin Oxide Nanostructures: Formation, Application, and Atomic and Electronic Structure Peculiarities. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2391. [PMID: 37686899 PMCID: PMC10490065 DOI: 10.3390/nano13172391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Revised: 08/18/2023] [Accepted: 08/19/2023] [Indexed: 09/10/2023]
Abstract
For a very long period, tin was considered one of the most important metals for humans due to its easy access in nature and abundance of sources. In the past, tin was mainly used to make various utensils and weapons. Today, nanostructured tin and especially its oxide materials have been found to possess many characteristic physical and chemical properties that allow their use as functional materials in various fields such as energy storage, photocatalytic process, gas sensors, and solar cells. This review discusses current methods for the synthesis of Sn/SnO2 composite materials in form of powder or thin film, as well as the application of the most advanced characterization tools based on large-scale synchrotron radiation facilities to study their chemical composition and electronic features. In addition, the applications of Sn/SnO2 composites in various fields are presented in detail.
Collapse
Affiliation(s)
- Poting Liu
- Department Functional Interfaces, Leibniz Institute of Photonic Technology, Albert-Einstein Str. 9, 07745 Jena, Germany;
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Helmholtzweg 4, 07743 Jena, Germany
| | - Vladimir Sivakov
- Department Functional Interfaces, Leibniz Institute of Photonic Technology, Albert-Einstein Str. 9, 07745 Jena, Germany;
| |
Collapse
|
2
|
Liu P, Schleusener A, Zieger G, Bochmann A, van Spronsen MA, Sivakov V. Nanostructured Silicon Matrix for Materials Engineering. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206318. [PMID: 36642786 DOI: 10.1002/smll.202206318] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2022] [Revised: 12/20/2022] [Indexed: 06/17/2023]
Abstract
Tin-containing layers with different degrees of oxidation are uniformly distributed along the length of silicon nanowires formed by a top-down method by applying metalorganic chemical vapor deposition. The electronic and atomic structure of the obtained layers is investigated by applying nondestructive surface-sensitive X-ray absorption near edge spectroscopy using synchrotron radiation. The results demonstrated, for the first time, a distribution effect of the tin-containing phases in the nanostructured silicon matrix compared to the results obtained for planar structures at the same deposition temperatures. The amount and distribution of tin-containing phases can be effectively varied and controlled by adjusting the geometric parameters (pore diameter and length) of the initial matrix of nanostructured silicon. Due to the occurrence of intense interactions between precursor molecules and decomposition by-products in the nanocapillary, as a consequence of random thermal motion of molecules in the nanocapillary, which leads to additional kinetic energy and formation of reducing agents, resulting in effective reduction of tin-based compounds to a metallic tin state for molecules with the highest penetration depth in the nanostructured silicon matrix. This effect will enable clear control of the phase distributions of functional materials in 3D matrices for a wide range of applications.
Collapse
Affiliation(s)
- Poting Liu
- Leibniz Institute of Photonic Technology, Albert-Einstein Str. 9, 07745, Jena, Germany
- Friedrich Schiller University Jena, Helmholtzweg 4, 07743, Jena, Germany
| | - Alexander Schleusener
- Leibniz Institute of Photonic Technology, Albert-Einstein Str. 9, 07745, Jena, Germany
- Friedrich Schiller University Jena, Helmholtzweg 4, 07743, Jena, Germany
- Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
| | - Gabriel Zieger
- Leibniz Institute of Photonic Technology, Albert-Einstein Str. 9, 07745, Jena, Germany
| | - Arne Bochmann
- Ernst Abbe University of Applied Science, Carl-Zeiss-Promenade 2, 07745, Jena, Germany
| | | | - Vladimir Sivakov
- Leibniz Institute of Photonic Technology, Albert-Einstein Str. 9, 07745, Jena, Germany
| |
Collapse
|