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Du Z, Ma Z, Yu T, Huang Z, You W, Chen Y, Yang J, Du H, Zhang Q, Li Y, Bai L, Li Y, Li G, Hou S, Xiang Y, Yu J, Huang C, Sun K, Long W. Regulation of Lead Iodide Crystallization and Distribution for Efficient Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2024; 16:49584-49593. [PMID: 39229717 DOI: 10.1021/acsami.4c10862] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/05/2024]
Abstract
At present, the power conversion efficiency (PCE) of perovskite solar cells (PSCs) has reached 26.1%. Polycrystalline perovskite films prepared by sequential deposition are often accompanied by excess PbI2. Although excess PbI2 can reduce the internal defects of the perovskites and promote charge transfer, excess PbI2 is unevenly distributed in the perovskites and easily decomposed into the composite center of charge. Therefore, the growth and distribution of PbI2 crystals can be regulated by introducing 4-fluoroaniline (4-FLA) as an additive into the precursor of PbI2. We observe that the presence of an amino group in 4-FLA leads to a reduction in the strength of van der Waals forces between PbI2 layer structures, thereby facilitating the uniform dispersion of excess PbI2 within the perovskites. Additionally, 4-FLA is restricted from being embedded in the PbI2 layer due to the steric hindrance of 4-FLA and the hydrogen bond interaction between nitrogen atoms and PbI2. Therefore, it leads to better dispersion of PbI2, resulting in better passivation and device efficiency. Based on the hydrophobicity of the benzene ring, the modified perovskite film shows excellent hydrophobicity. Ultimately, we achieved 21.63% PCE and 1.16V VOC. This provides an effective strategy for regulating excess PbI2 to achieve efficient and stable PSCs.
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Affiliation(s)
- Zhuowei Du
- School of New Energy and Materials, Southwest Petroleum University (SWPU), Chengdu 610500, China
| | - Zhu Ma
- School of New Energy and Materials, Southwest Petroleum University (SWPU), Chengdu 610500, China
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
| | - Tangjie Yu
- School of New Energy and Materials, Southwest Petroleum University (SWPU), Chengdu 610500, China
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
| | - Zhangfeng Huang
- School of New Energy and Materials, Southwest Petroleum University (SWPU), Chengdu 610500, China
| | - Wei You
- School of New Energy and Materials, Southwest Petroleum University (SWPU), Chengdu 610500, China
| | - Yi Chen
- School of New Energy and Materials, Southwest Petroleum University (SWPU), Chengdu 610500, China
| | - Junbo Yang
- School of New Energy and Materials, Southwest Petroleum University (SWPU), Chengdu 610500, China
| | - Hao Du
- School of New Energy and Materials, Southwest Petroleum University (SWPU), Chengdu 610500, China
| | - Qian Zhang
- School of New Energy and Materials, Southwest Petroleum University (SWPU), Chengdu 610500, China
| | - Yixian Li
- School of New Energy and Materials, Southwest Petroleum University (SWPU), Chengdu 610500, China
| | - Lihong Bai
- School of New Energy and Materials, Southwest Petroleum University (SWPU), Chengdu 610500, China
| | - Yanlin Li
- School of New Energy and Materials, Southwest Petroleum University (SWPU), Chengdu 610500, China
| | - Guoming Li
- School of New Energy and Materials, Southwest Petroleum University (SWPU), Chengdu 610500, China
| | - Shanyue Hou
- School of New Energy and Materials, Southwest Petroleum University (SWPU), Chengdu 610500, China
| | - Yan Xiang
- School of New Energy and Materials, Southwest Petroleum University (SWPU), Chengdu 610500, China
| | - Jian Yu
- School of New Energy and Materials, Southwest Petroleum University (SWPU), Chengdu 610500, China
- Institute of Photovoltaic, Southwest Petroleum University, Chengdu 610500, China
| | - Cheng Huang
- School of New Energy and Materials, Southwest Petroleum University (SWPU), Chengdu 610500, China
| | - Kuan Sun
- Key Laboratory of Low-grade Energy Utilization Technologies and Systems (MoE), School of Energy and Power Engineering, Chongqing University, Chongqing 400044, China
| | - Wei Long
- Tongwei Solar Co, Ltd., Chengdu 610200, China
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Wang J, Liu S, Guan X, Wang K, Shen S, Cong C, Chen CC, Xie F. Enhancing the Efficiency and Stability of Inverted Formamidinium-Cesium Lead-Triiodide Perovskite Solar Cells through Lewis Base Pretreatment of Buried Interfaces. ACS APPLIED MATERIALS & INTERFACES 2024; 16:35732-35739. [PMID: 38924757 DOI: 10.1021/acsami.4c04901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/28/2024]
Abstract
Mixed components of formamidinium(FA) and cesium (Cs)-based perovskite solar cells are the most hopeful for commercialization owing to their excellent operational and phase stabilities, especially for devices with inverted structure. The nonradiative recombination of carriers can be effectively suppressed through interface optimization, therefore, the performance of devices can be improved. Notably, the buried interface emerges as critical aspects such as charge transport, charge recombination kinetics, and morphology of perovskite films. This study focuses on a straightforward yet effective approach to overcome buried interface challenges between organic polymers (poly(-triarylamine) (PTAA) and FACs-based perovskite films. The PTAA substrate is pretreated with a Lewis base known as 2-butynoic acid (BA) with a C═O functional group. First, it can be an interfacial buffering layer, harmonizing stress mismatch between the perovskite and PTAA layers, consequently optimizing crystallization and improving perovskite film quality. Second, Pb2+ defect can be passivated at the buried interface of the perovskite film through binding with the C═O group of the BA molecule. This dual-function strategy leads to a substantial enhancement in both photoelectric conversion efficiency (PCE) and stability of devices. Finally, the PCE of the device-modified buried interface with BA reaches an impressive 23.33%. Furthermore, unencapsulated devices with BA treatment maintain approximately 94% of their initial efficiency after aging at maximum power point tracking for 1000 h.
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Affiliation(s)
- Jing Wang
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
- Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, Fudan University, Shanghai 200433, China
| | - Siyu Liu
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Xiang Guan
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
- Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, Fudan University, Shanghai 200433, China
| | - Kongxiang Wang
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
- Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, Fudan University, Shanghai 200433, China
| | - Shuwen Shen
- State Key Laboratory ASIC&System, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Chunxiao Cong
- State Key Laboratory ASIC&System, School of Information Science and Technology, Fudan University, Shanghai 200433, China
- Yiwu Research Institute of Fudan University, Yiwu City, Zhejiang 322000, China
| | - Chun-Chao Chen
- School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 20024, China
| | - Fengxian Xie
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
- Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, Fudan University, Shanghai 200433, China
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Bai Y, He J, Ran R, Zhou W, Wang W, Shao Z. Complex Metal Oxides as Emerging Inorganic Hole-Transporting Materials for Perovskite Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2310227. [PMID: 38196154 DOI: 10.1002/smll.202310227] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2023] [Revised: 12/25/2023] [Indexed: 01/11/2024]
Abstract
Perovskite solar cells (PSCs) have achieved revolutionary progress during the past decades with a rapidly boosting rate in power conversion efficiencies from 3.8% to 26.1%. However, high-efficiency PSCs with organic hole-transporting materials (HTMs) suffer from inferior long-term stability and high costs. The replacement of organic HTMs with inorganic counterparts such as metal oxides can solve the above-mentioned problems to realize highly robust and cost-effective PSCs. Nevertheless, the widely used simple metal oxide-based HTMs are limited by the low conductivity and poor light transmittance due to the fixed atomic environment. As an emerging family of inorganic HTMs, complex metal oxides with superior structural/compositional flexibility have attracted rapidly increasing interest recently, showing superior carrier conductivity/mobility and superb light transmittance. Herein, the recent advancements in the design and development of complex metal oxide-based HTMs for high-performance PSCs are summarized by emphasizing the superiority of complex metal oxides as HTMs over simple metal oxide-based counterparts. Consequently, several distinct strategies for the design of complex metal oxide-based HTMs are proposed. Last, the future directions and remaining challenges of inorganic complex metal oxide-based HTMs for PSCs are also presented. This review aims to provide valuable guidelines for the further advancements of robust, high-efficiency, and low-cost PSCs.
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Affiliation(s)
- Yu Bai
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, 210009, China
| | - Jingsheng He
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, 210009, China
| | - Ran Ran
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, 210009, China
| | - Wei Zhou
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, 210009, China
| | - Wei Wang
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, 210009, China
| | - Zongping Shao
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, 210009, China
- WA School of Mines: Minerals, Energy and Chemical Engineering, Curtin University, Perth, Western Australia, 6845, Australia
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Li Y, Wang Y, Xu Z, Peng B, Li X. Key Roles of Interfaces in Inverted Metal-Halide Perovskite Solar Cells. ACS NANO 2024; 18:10688-10725. [PMID: 38600721 DOI: 10.1021/acsnano.3c11642] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2024]
Abstract
Metal-halide perovskite solar cells (PSCs), an emerging technology for transforming solar energy into a clean source of electricity, have reached efficiency levels comparable to those of commercial silicon cells. Compared with other types of PSCs, inverted perovskite solar cells (IPSCs) have shown promise with regard to commercialization due to their facile fabrication and excellent optoelectronic properties. The interlayer interfaces play an important role in the performance of perovskite cells, not only affecting charge transfer and transport, but also acting as a barrier against oxygen and moisture permeation. Herein, we describe and summarize the last three years of studies that summarize the advantages of interface engineering-based advances for the commercialization of IPSCs. This review includes a brief introduction of the structure and working principle of IPSCs, and analyzes how interfaces affect the performance of IPSC devices from the perspective of photovoltaic performance and device lifetime. In addition, a comprehensive summary of various interface engineering approaches to solving these problems and challenges in IPSCs, including the use of interlayers, interface modification, defect passivation, and others, is summarized. Moreover, based upon current developments and breakthroughs, fundamental and engineering perspectives on future commercialization pathways are provided for the innovation and design of next-generation IPSCs.
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Affiliation(s)
- Yue Li
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081, China
| | - Yuhua Wang
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081, China
| | - Zichao Xu
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081, China
| | - Bo Peng
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081, China
| | - Xifei Li
- Key Materials & Components of Electrical Vehicles for Overseas Expertise Introduction Center for Discipline Innovation, Institute of Advanced Electrochemical Energy & School of Materials Science and Engineering, Xi'an University of Technology, Xi'an 710048, China
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
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Wang C, Guo Y, Liu S, Huang J, Liu X, Zhang J, Hu Z, Zhu Y, Huang L. Multifunctional dual-interface layer enables efficient and stable inverted perovskite solar cells. Phys Chem Chem Phys 2024; 26:8299-8307. [PMID: 38389432 DOI: 10.1039/d3cp05794a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/24/2024]
Abstract
Considering that the hydrophobicity of PTAA as the surface of an inverted perovskite solar cell (PSC) substrate directly influences the crystallization and top surface properties of perovskite films, dual-interface engineering is a significant strategy to obtain excellent PSCs. PFN-Br was inserted into the PTAA/perovskite interface to ensure close interfacial contact and achieve exceptional crystallization, and then the perovskite top surface was covered with 3-PyAI to further improve its interface property. The mechanism of interaction of PFN-Br and 3-PyAI with perovskites was analyzed through various characterization methods. The results showed that the introduction of a hydrophilic interface layer reduces voids and defects at the bottom of the film. Additionally, the existence of 3-PyAI reduces surface defects, optimizes energy level alignment, and decreases non-radiative recombination, which is beneficial for charge transfer. Consequently, the open circuit voltage (VOC) and fill factor (FF) of the optimized device were greatly enhanced, and the champion device showed a power conversion efficiency (PCE) of 22.07%. The unencapsulated device with PFN-Br&3-PyAI can retain 80% of its initial performance after aging in the air atmosphere (25 °C at a relative humidity (RH) of 25%) for 27 days. Moreover, the reverse bias stability of the device was improved, with the reverse breakdown voltage (VRB) reaching -2 V. This work recommends a dual-interface strategy for efficient and reliable PTAA-based PSCs.
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Affiliation(s)
- Chaofeng Wang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Fenghua Road 818, Ningbo 315211, China.
| | - Yi Guo
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Fenghua Road 818, Ningbo 315211, China.
| | - Shuang Liu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Fenghua Road 818, Ningbo 315211, China.
| | - Jiajia Huang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Fenghua Road 818, Ningbo 315211, China.
| | - Xiaohui Liu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Fenghua Road 818, Ningbo 315211, China.
| | - Jing Zhang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Fenghua Road 818, Ningbo 315211, China.
| | - Ziyang Hu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Fenghua Road 818, Ningbo 315211, China.
| | - Yuejin Zhu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Fenghua Road 818, Ningbo 315211, China.
- College of Science and Technology, Ningbo University, Fenghua Road 818, Ningbo 315211, China
| | - Like Huang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Fenghua Road 818, Ningbo 315211, China.
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
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