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Zhang Y, Jeong S, Son E, Choi Y, Lee S, Baik JM, Park H. In Situ Phase Separation-Induced Self-Healing Catalyst for Efficient Direct Seawater Electrolysis. ACS NANO 2024; 18:16312-16323. [PMID: 38864411 DOI: 10.1021/acsnano.4c06220] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2024]
Abstract
Direct seawater electrolysis technology for sustainable hydrogen production has garnered significant attention, owing to its abundant resource supply and economic potential. However, the complex composition and high chloride concentration of seawater have hindered its practical implementation. In this study, we report an in situ-synthesized dual-phase electrocatalyst (HPS-NiMo), comprising an amorphous phosphide protective outer phase and a crystalline alloy inner phase with supplementary sulfur active sites, to improve the kinetics of direct seawater electrolysis. The HPS-NiMo exhibits long-term stability, remaining stable for periods exceeding 120 h at 200 mA cm-2; moreover, it lowers the required operating voltage to ∼1.8 V in natural seawater. The chlorine chemistry, corrosion during direct natural seawater electrolysis, and mechanism behind the high-performing catalysts are discussed. We also investigated the possibility of recovering the anode precipitates, which inevitably occurs during seawater electrolysis.
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Affiliation(s)
- Yihan Zhang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Seulgi Jeong
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Eunbin Son
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Yunseong Choi
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Sangjin Lee
- Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea
| | - Jeong Min Baik
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- SKKU Institute of Energy Science and Technology (SIEST), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyesung Park
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
- Department of Integrative Energy Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
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Liu Y, Li HY, Cao HX, Zheng XY, Yin Shi B, Yin HT. Defect and interface/surface engineering synergistically modulated electron transfer and nonlinear absorption properties in MoX 2 (X = Se, S, Te)@ZnO heterojunction. NANOSCALE 2024; 16:1865-1879. [PMID: 38168696 DOI: 10.1039/d3nr05766f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Systematic interface and defect engineering strategies have been demonstrated to be an effective way to modulate the electron transfer and nonlinear absorption properties in semiconductor heterojunctions. However, the role played by defects and interfacial strain in electron transfer at the interface of the MoX2 (X = Se, S, Te)@ZnO heterojunction remains poorly understood. Herein, using the MoX2@ZnO heterojunction, we reveal that vacancies play a critical role in the interfacial electron transfer of heterojunctions. Specifically, we present the defect and interface engineering of the MoX2@ZnO heterojunction for controlled charge transfer and electron excitation-relaxation. The experimental characterization combined with first-principles calculations showed that the presence of defects promoted the transport of photogenerated carriers at the heterojunction interface, thereby inhibiting their rapid recombination. The DFT calculation confirmed that the electron band structure, density of states and charge density distribution in the system changed after the formation of Mo-O bonds. On the basis of defects and interfacial stress and the effective charge transfer, the MoX2@ZnO heterojunction exhibited excellent excitation and emission behaviors. The nonlinear optical regulation behavior of TMDs is expected to be realized with the help of the defects and interface/surface synergistically modulated effect of ZnO nanoparticles. The local strain generation on the MoX2@ZnO heterojunction boundary provides a new method for the design of new heterogeneous materials and will be of great significance to investigate the contact physical behavior and application of metals and two-dimensional (2D) semiconductors. This work provides some inspiration for the construction of heterojunctions with rich defects and surface/interface charge transfer channels to promote tunable electron transfer dynamics, thereby achieving a good nonlinear optical conversion efficiency and efficient charge separation in optoelectronic functional materials.
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Affiliation(s)
- Yu Liu
- Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, Heilongjiang Province, China.
| | - Hong-Yu Li
- Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, Heilongjiang Province, China.
| | - Hong-Xu Cao
- Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, Heilongjiang Province, China.
| | - Xin-Yu Zheng
- Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, Heilongjiang Province, China.
| | - Bing- Yin Shi
- Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, Heilongjiang Province, China.
| | - Hai-Tao Yin
- Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, Heilongjiang Province, China.
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