Defect Engineering Strategies Toward Controlled Functionalization of Solution‐Processed Transition Metal Dichalcogenides

Defect Engineering of MoTe2 via Thiol Treatment for Type III van der Waals Heterojunction Phototransistor

Molybdenum ditelluride (MoTe2) nanosheets have displayed intriguing physicochemical properties and opto-electric characteristics as a result of their tunable and small band gap (Eg ∼ 1 eV), facilitating concurrent electron and hole transport. Despite the numerous efforts devoted to the development of p-type MoTe2 field-effect transistors (FETs), the presence of tellurium (Te) point vacancies has caused serious reliability issues. Here, we overcome this major limitation by treating the MoTe2 surface with thiolated molecules to heal Te vacancies. Comprehensive materials and electrical characterizations provided unambiguous evidence for the efficient chemisorption of butanethiol. Our thiol-treated MoTe2 FET exhibited a 10-fold increase in hole current and a positive threshold voltage shift of 25 V, indicative of efficient hole carrier doping. We demonstrated that our powerful molecular engineering strategy can be extended to the controlled formation of van der Waals heterostructures by developing an n-SnS2/thiol-MoTe2 junction FET (thiol-JFET). Notably, the thiol-JFET exhibited a significant negative photoresponse with a responsivity of 50 A W-1 and a fast response time of 80 ms based on band-to-band tunneling. More interestingly, the thiol-JFET displayed a gate tunable trimodal photodetection comprising two photoactive modes (positive and negative photoresponse) and one photoinactive mode. These findings underscore the potential of molecular engineering approaches in enhancing the performance and functionality of MoTe2-based nanodevices as key components in advanced 2D-based optoelectronics.

Electrochemical exfoliation of 2D materials beyond graphene

After the discovery of graphene in 2004, the field of atomically thin crystals has exploded with the discovery of thousands of 2-dimensional materials (2DMs) with unique electronic and optical properties, by making them very attractive for a broad range of applications, from electronics to energy storage and harvesting, and from sensing to biomedical applications. In order to integrate 2DMs into practical applications, it is crucial to develop mass scalable techniques providing crystals of high quality and in large yield. Electrochemical exfoliation is one of the most promising methods for producing 2DMs, as it enables quick and large-scale production of solution processable nanosheets with a thickness well below 10 layers and lateral size above 1 μm. Originally, this technique was developed for the production of graphene; however, in the last few years, this approach has been successfully extended to other 2DMs, such as transition metal dichalcogenides, black phosphorous, hexagonal boron nitride, MXenes and many other emerging 2D materials. This review first provides an introduction to the fundamentals of electrochemical exfoliation and then it discusses the production of each class of 2DMs, by introducing their properties and giving examples of applications. Finally, a summary and perspective are given to address some of the challenges in this research area.

The Case for a Defect Genome Initiative

The Materials Genome Initiative (MGI) has streamlined the materials discovery effort by leveraging generic traits of materials, with focus largely on perfect solids. Defects such as impurities and perturbations, however, drive many attractive functional properties of materials. The rich tapestry of charge, spin, and bonding states hosted by defects are not accessible to elements and perfect crystals, and defects can thus be viewed as another class of "elements" that lie beyond the periodic table. Accordingly, a Defect Genome Initiative (DGI) to accelerate functional defect discovery for energy, quantum information, and other applications is proposed. First, major advances made under the MGI are highlighted, followed by a delineation of pathways for accelerating the discovery and design of functional defects under the DGI. Near-term goals for the DGI are suggested. The construction of open defect platforms and design of data-driven functional defects, along with approaches for fabrication and characterization of defects, are discussed. The associated challenges and opportunities are considered and recent advances towards controlled introduction of functional defects at the atomic scale are reviewed. It is hoped this perspective will spur a community-wide interest in undertaking a DGI effort in recognition of the importance of defects in enabling unique functionalities in materials.

Defect engineering of 1T'MX2(M= Mo, W andX= S, Se) transition metal dichalcogenide-based electrocatalyst for alkaline hydrogen evolution reaction

The alkaline electrolyzer (AEL) is a promising device for green hydrogen production. However, their energy conversion efficiency is currently limited by the low performance of the electrocatalysts for the hydrogen evolution reaction (HER). As such, the electrocatalyst design for the high-performance HER becomes essential for the advancement of AELs. In this work, we used both hydrogen (H) and hydroxyl (OH) adsorption Gibbs free energy changes as the descriptors to investigate the catalytic HER performance of 1T' transition metal dichalcogenides (TMDs) in an alkaline solution. Our results reveal that the pristine sulfides showed better alkaline HER performance than their selenide counterparts. However, the activities of all pristine 1T' TMDs are too low to dissociate water. To improve the performance of these materials, defect engineering techniques were used to design TMD-based electrocatalysts for effective HER activity. Our density functional theory results demonstrate that introducing single S/Se vacancy defects can improve the reactivities of TMD materials. Yet, the desorption of OH becomes the rate-determining step. Doping defective MoS2with late 3d transition metal (TM) atoms, especially Cu, Ni, and Co, can regulate the reactivity of active sites for optimal OH desorption. As a result, the TM-doped defective 1T' MoS2can significantly enhance the alkaline HER performance. These findings highlight the potential of defect engineering technologies for the design of TMD-based alkaline HER electrocatalysts.

Engineering Vacancies for the Creation of Antisite Defects in Chemical Vapor Deposition Grown Monolayer MoS2 and WS2 via Proton Irradiation

It is critical to understand the laws of quantum mechanics in transformative technologies for computation and quantum information science applications to enable the ongoing second quantum revolution calls. Recently, spin qubits based on point defects have gained great attention, since these qubits can be initiated, selectively controlled, and read out with high precision at ambient temperature. The major challenge in these systems is controllably generating multiqubit systems while properly coupling the defects. To address this issue, we began by tackling the engineering challenges these systems present and understanding the fundamentals of defects. In this regard, we controllably generate defects in MoS2 and WS2 monolayers and tune their physicochemical properties via proton irradiation. We quantitatively discovered that the proton energy could modulate the defects' density and nature; higher defect densities were seen with lower proton irradiation energies. Three distinct defect types were observed: vacancies, antisites, and adatoms. In particular, the creation and manipulation of antisite defects provides an alternative way to create and pattern spin qubits based on point defects. Our results demonstrate that altering the particle irradiation energy can regulate the formation of defects, which can be utilized to modify the properties of 2D materials and create reliable electronic devices.

High Selectivity and Sensitivity in Chemiresistive Sensing of Co(II) Ions with Liquid-Phase Exfoliated Functionalized MoS2 : A Supramolecular Approach

Chemical sensing of water contamination by heavy metal ions is key as it represents a most severe environmental problem. Liquid-phase exfoliated two-dimensional (2D) transition metal dichalcogenides (TMDs) are suitable candidates for chemical sensing thanks to their high surface-to-volume ratio, sensitivity, unique electrical characteristics, and scalability. However, TMDs lack selectivity due to nonspecific analyte-nanosheet interactions. To overcome this drawback, defect engineering enables controlled functionalization of 2D TMDs. Here, ultrasensitive and selective sensors of cobalt(II) ions via the covalent functionalization of defect-rich MoS2 flakes with a specific receptor, 2,2':6',2″-terpyridine-4'-thiol is developed. A continuous network is assembled by healing of MoS2 sulfur vacancies in a tailored microfluidic approach, enabling high control over the assembly of thin and large hybrid films. The Co2+ cations complexation represents a powerful gauge for low concentrations of cationic species which can be best monitored in a chemiresisitive ion sensor, featuring a 1 pm limit of detection, sensing in a broad concentration range (1 pm - 1 µm) and sensitivity as high as 0.308 ± 0.010 lg([Co2+ ])-1 combined with a high selectivity towards Co2+ over K+ , Ca2+ , Mn2+ , Cu2+ , Cr3+ , and Fe3+ cations. This supramolecular approach based on highly specific recognition can be adapted for sensing other analytes through specific ad-hoc receptors.

Deciphering Vacancy Defect Evolution of 2D MoS2 for Reliable Transistors

Two-dimensional (2D) MoS2 is an excellent candidate channel material for next-generation integrated circuit (IC) transistors. However, the reliability of MoS2 is of great concern due to the serious threat of vacancy defects, such as sulfur vacancies (VS). Evaluating the impact of vacancy defects on the service reliability of MoS2 transistors is crucial, but it has always been limited by the difficulty in systematically tracking and analyzing the changes and effects of vacancy defects in the service environment. Here, a simulated initiator is established for deciphering the evolution of vacancy defects in MoS2 and their influence on the reliability of transistors. The results indicate that VS below 1.3% are isolated by slow enrichment during initiation. Over 1.3% of VS tend to enrich in pairs and over 3.5% of the enriched VS easily evolve into nanopores. The enriched VS with electron doping in the channel cause the threshold voltage (Vth) negative drift approaching 6 V, while the expanded nanopores initiate the Vth roll-off and punch-through of transistors. Finally, sulfur steam deposition has been proposed to constrain VS enrichment, and reliable MoS2 transistors are constructed. Our research provides a new method for deciphering and identifying the impact of defects.

Unveiling Charge-Transport Mechanisms in Electronic Devices Based on Defect-Engineered MoS2 Covalent Networks

Device performance of solution-processed 2D semiconductors in printed electronics has been limited so far by structural defects and high interflake junction resistance. Covalently interconnected networks of transition metal dichalcogenides potentially represent an efficient strategy to overcome both limitations simultaneously. Yet, the charge-transport properties in such systems have not been systematically researched. Here, the charge-transport mechanisms of printed devices based on covalent MoS₂ networks are unveiled via multiscale analysis, comparing the effects of aromatic versus aliphatic dithiolated linkers. Temperature-dependent electrical measurements reveal hopping as the dominant transport mechanism: aliphatic systems lead to 3D variable range hopping, unlike the nearest neighbor hopping observed for aromatic linkers. The novel analysis based on percolation theory attributes the superior performance of devices functionalized with π-conjugated molecules to the improved interflake electronic connectivity and formation of additional percolation paths, as further corroborated by density functional calculations. Valuable guidelines for harnessing the charge-transport properties in MoS₂ devices based on covalent networks are provided.

Reversible Electrical Control of Interfacial Charge Flow across van der Waals Interfaces

Bond-free integration of two-dimensional (2D) materials yields van der Waals (vdW) heterostructures with exotic optical and electronic properties. Manipulating the splitting and recombination of photogenerated electron-hole pairs across the vdW interface is essential for optoelectronic applications. Previous studies have unveiled the critical role of defects in trapping photogenerated charge carriers to modulate the photoconductive gain for photodetection. However, the nature and role of defects in tuning interfacial charge carrier dynamics have remained elusive. Here, we investigate the nonequilibrium charge dynamics at the graphene-WS₂ vdW interface under electrochemical gating by operando optical-pump terahertz-probe spectroscopy. We report full control over charge separation states and thus photogating field direction by electrically tuning the defect occupancy. Our results show that electron occupancy of the two in-gap states, presumably originating from sulfur vacancies, can account for the observed rich interfacial charge transfer dynamics and electrically tunable photogating fields, providing microscopic insights for optimizing optoelectronic devices.

MoS2 Defect Healing for High-Performance Chemical Sensing of Polycyclic Aromatic Hydrocarbons

The increasing population and industrial development are responsible for environmental pollution. Among toxic chemicals, polycyclic aromatic hydrocarbons (PAHs) are highly carcinogenic contaminants resulting from the incomplete combustion of organic materials. Two-dimensional materials, such as transition metal dichalcogenides (TMDCs), are ideal sensory scaffolds, combining high surface-to-volume ratio with physical and chemical properties that are strongly susceptible to environmental changes. TMDCs can be integrated in field-effect transistors (FETs), which can operate as high-performance chemical detectors of (non)covalent interaction with small molecules. Here, we have developed MoS₂-based FETs as platforms for PAHs sensing, relying on the affinity of the planar polyaromatic molecules for the basal plane of MoS₂ and the structural defects in its lattice. X-ray photoelectron spectroscopy analysis, photoluminescence measurements, and transfer characteristics showed a notable reduction in the defectiveness of MoS₂ and a p-type doping upon exposure to PAHs solutions, with a magnitude determined by the correlation between the ionization energies (E_I) of the PAH and that of MoS₂. Naphthalene, endowed with the higher E_I among the studied PAHs, exhibited the highest output. We observed a log-log correlation between MoS₂ doping and naphthalene concentration in water in a wide range (10^-9-10^-6 M), as well as a reversible response to the analyte. Naphthalene concentrations as low as 0.128 ppb were detected, being below the limits imposed by health regulations for drinking water. Furthermore, our MoS₂ devices can reversibly detect vapors of naphthalene with both an electrical and optical readout, confirming that our architecture could operate as a dual sensing platform.

Vanadium Tetrasulfide for Next-Generation Rechargeable Batteries: Advances and Challenges

Alkali metal-ion batteries (SIBs and PIBs) and multivalent metal-ion batteries (ZIBs, MIBs, and AIBs), among the next-generation rechargeable batteries, are deemed appealing alternatives to lithium-ion batteries (LIBs) because of their cost competitiveness. Improving the electrochemical properties of electrode materials can greatly accelerate the pace of development in battery systems to cover the increasing demands of realistic applications. Vanadium tetrasulfide (VS₄ ) is known as a prospective electrode material due to its unique one-dimensional atomic chain structure with a large chain spacing, weak interactions between adjacent chains, and high sulfur content. This review summarizes the synthetic strategies and recent advances of VS₄ as cathodes/anodes for rechargeable batteries. Meanwhile, we describe the structural characteristics and electrochemical properties of VS₄ . And we describe in detail its specific applications in batteries such as SIBs, PIBs, ZIBs, MIBs, and AIBs as well as modification strategies. Finally, the opportunities and challenges of VS₄ in the domain of energy research are described.