Revealing Dynamic Effects of Mobile Ions in Halide Perovskite Solar Cells Using Time-Resolved Microspectroscopy

Synergistic Passivation With Phenylpropylammonium Bromide for Efficient Inverted Perovskite Solar Cells

Inverted perovskite solar cells (PSCs) are a promising technology for commercialization due to their reliable operation and scalable fabrication. However, in inverted PSCs, depositing a high-quality perovskite layer comparable to those realized in normal structures still presents some challenges. Defects at grain boundaries and interfaces between the active layer and carrier extraction layer seriously hinder the power conversion efficiency (PCE) and stability of these cells. In this work, it is shown that synergistic bulk doping and surface treatment of triple-cation mixed-halide perovskites with phenylpropylammonium bromine (PPABr) can improve the efficiency and stability of inverted PSCs. The PPABr ligand is effective in eliminating halide vacancy defects and uncoordinated Pb2+ ions at both grain boundaries and interfaces. In addition, a 2D Ruddlesden-Popper (2D-RP) perovskite capping layer is formed on the surface of 3D perovskite by using PPABr post-treatment. This 2D-RP perovskite capping layer possesses a concentrated phase distribution ≈n = 2. This capping layer not only reduces interfacial non-radiative recombination loss and improves carrier extraction ability but also promotes stability and efficiency. As a result, the inverted PSCs achieve a champion PCE of over 23%, with an open-circuit voltage as high as 1.15 V and a fill factor of over 83%.

A systematic discrepancy between the short circuit current and the integrated quantum efficiency in perovskite solar cells

Halide perovskites solar cells are now approaching commercialisation. In this transition from academic research towards industrialisation, standardized testing protocols and reliable dissemination of performance metrics are crucial. In this study, we analyze data from over 16,000 publications in the Perovskite Database to investigate the assumed equality between the integrated external quantum efficiency and the short circuit current from JV measurements. We find a systematic discrepancy with the JV-values being on average 4% larger. This discrepancy persists across time, perovskite composition, and device architecture, indicating the need to explore new perovskite physics and update reporting protocols and assumptions in the field.

In Situ and Operando Characterization Techniques in Stability Study of Perovskite-Based Devices

Metal halide perovskite materials have demonstrated significant potential in various optoelectronic applications, such as photovoltaics, light emitting diodes, photodetectors, and lasers. However, the stability issues of perovskite materials continue to impede their widespread use. Many studies have attempted to understand the complex degradation mechanism and dynamics of these materials. Among them, in situ and/or operando approaches have provided remarkable insights into the degradation process by enabling precise control of degradation parameters and real-time monitoring. In this review, we focus on these studies utilizing in situ and operando approaches and demonstrate how these techniques have contributed to reveal degradation details, including structural, compositional, morphological, and other changes. We explore why these two approaches are necessary in the study of perovskite degradation and how they can be achieved by upgrading the corresponding ex situ techniques. With recent stability improvements of halide perovskite using various methods (compositional engineering, surface engineering, and structural engineering), the degradation of halide perovskite materials is greatly retarded. However, these improvements may turn into new challenges during the investigation into the retarded degradation process. Therefore, we also highlight the importance of enhancing the sensitivity and probing range of current in situ and operando approaches to address this issue. Finally, we identify the challenges and future directions of in situ and operando approaches in the stability research of halide perovskites. We believe that the advancement of in situ and operando techniques will be crucial in supporting the journey toward enhanced perovskite stability.

Caution! Static Supercell Calculations of Defect Migration in Higher Symmetry ABX3 Perovskite Halides May Be Unreliable: A Case Study of Methylammonium Lead Iodide

Activation energies of defect migration in ABX₃ perovskite halides are widely obtained through static supercell calculations with the nudged-elastic-band method. Taking methylammonium lead iodide (CH₃NH₃PbI₃, MAPbI₃) as an example, we demonstrate that such calculations are unreliable for the higher symmetry structures adopted by the material at temperatures relevant to device operation (tetragonal and cubic MAPbI₃) because, in addition to ion relaxation around the point defects, local structural modifications characteristic of the ground-state (orthorhombic) structure occur. In this way, we offer a simple explanation of why calculated activation energies of defect migration in MAPbI₃ suffer from surprisingly large scatter. We propose a robust test to determine whether static supercell calculations of point-defect processes in ABX₃ perovskite systems are reliable.

Chemical approaches for electronic doping in photovoltaic materials beyond crystalline silicon

Electronic doping is applied to tailor the electrical and optoelectronic properties of semiconductors, which have been widely adopted in information and clean energy technologies, like integrated circuit fabrication and PVs. Though this concept has prevailed in conventional PVs, it has achieved limited success in the new-generation PV materials, particularly in halide perovskites, owing to their soft lattice nature and self-compensation by intrinsic defects. In this review, we summarize the evolution of the theoretical understanding and strategies of electronic doping from Si-based photovoltaics to thin-film technologies, e.g., GaAs, CdTe and Cu(In,Ga)Se₂, and also cover the emerging PVs including halide perovskites and organic solar cells. We focus on the chemical approaches to electronic doping, emphasizing various chemical interactions/bonding throughout materials synthesis/modification to device fabrication/operation. Furthermore, we propose new classifications and models of electronic doping based on the physical and chemical properties of dopants, in the context of solid-state chemistry, which inspires further development of optoelectronics based on perovskites and other hybrid materials. Finally, we outline the effects of electronic doping in semiconducting materials and highlight the challenges that need to be overcome for reliable and controllable doping.

Engineering van der Waals Materials for Advanced Metaphotonics

The outstanding chemical and physical properties of 2D materials, together with their atomically thin nature, make them ideal candidates for metaphotonic device integration and construction, which requires deep subwavelength light-matter interaction to achieve optical functionalities beyond conventional optical phenomena observed in naturally available materials. In addition to their intrinsic properties, the possibility to further manipulate the properties of 2D materials via chemical or physical engineering dramatically enhances their capability, evoking new science on light-matter interaction, leading to leaped performance of existing functional devices and giving birth to new metaphotonic devices that were unattainable previously. Comprehensive understanding of the intrinsic properties of 2D materials, approaches and capabilities for chemical and physical engineering methods, the resulting property modifications and novel functionalities, and applications of metaphotonic devices are provided in this review. Through reviewing the detailed progress in each aspect and the state-of-the-art achievement, insightful analyses of the outstanding challenges and future directions are elucidated in this cross-disciplinary comprehensive review with the aim to provide an overall development picture in the field of 2D material metaphotonics and promote rapid progress in this fast emerging and prosperous field.

Quantum Dot Passivation of Halide Perovskite Films with Reduced Defects, Suppressed Phase Segregation, and Enhanced Stability

Structural defects are ubiquitous for polycrystalline perovskite films, compromising device performance and stability. Herein, a universal method is developed to overcome this issue by incorporating halide perovskite quantum dots (QDs) into perovskite polycrystalline films. CsPbBr3 QDs are deposited on four types of halide perovskite films (CsPbBr3 , CsPbIBr2 , CsPbBrI2 , and MAPbI3 ) and the interactions are triggered by annealing. The ions in the CsPbBr3 QDs are released into the thin films to passivate defects, and concurrently the hydrophobic ligands of QDs self-assemble on the film surfaces and grain boundaries to reduce the defect density and enhance the film stability. For all QD-treated films, PL emission intensity and carrier lifetime are significantly improved, and surface morphology and composition uniformity are also optimized. Furthermore, after the QD treatment, light-induced phase segregation and degradation in mixed-halide perovskite films are suppressed, and the efficiency of mixed-halide CsPbIBr2 solar cells is remarkably improved to over 11% from 8.7%. Overall, this work provides a general approach to achieving high-quality halide perovskite films with suppressed phase segregation, reduced defects, and enhanced stability for optoelectronic applications.

Microsteganography on all inorganic perovskite micro-platelets by direct laser writing

Direct laser writing (DLW) is a mask-free and cost-efficient micro-fabrication technology, which has been explored to pattern structures on perovskites. However, there is still a lack of research on DLW methods for microsteganography. Herein, we developed a sophisticated DLW condition to pattern on CsPbBr₃ perovskite micro-platelets (MPs). In addition to the reversible PL quenching caused by photo-induced ion migration, permanent nonradiative centers are also produced by the DLW treatment. Therefore, the patterned information is retained after long-term storage. Meanwhile, the mild DLW condition only results in a faint trace, which is almost invisible under a regular optical microscope. Thus, the patterned information is hidden unless applying an excitation source, which paves the way for applications in microsteganography and anti-counterfeiting. As a proof-of-concept, different patterns are drawn on the CsPbBr₃ MPs by DLW, which are only observable under a fluorescence microscope.

Review of Interface Passivation of Perovskite Layer

Perovskite solar cells (PSCs) are the most promising substitute for silicon-based solar cells. However, their power conversion efficiency and stability must be improved. The recombination probability of the photogenerated carriers at each interface in a PSC is much greater than that of the bulk phase. The interface of a perovskite polycrystalline film is considered to be a defect-rich area, which is the main factor limiting the efficiency of a PSC. This review introduces and summarizes practical interface engineering techniques for improving the efficiency and stability of organic-inorganic lead halide PSCs. First, the effect of defects at the interface of the PSCs, the energy level alignment, and the chemical reactions on the efficiency of a PSC are summarized. Subsequently, the latest developments pertaining to a modification of the perovskite layers with different materials are discussed. Finally, the prospect of achieving an efficient PSC with long-term stability through the use of interface engineering is presented.

Spectroscopic Insight into Efficient and Stable Hole Transfer at the Perovskite/Spiro-OMeTAD Interface with Alternative Additives

A stable and efficient carrier transfer is a prerequisite for high-performance perovskite solar cells. With optimized additives, a significantly improved charge carrier transfer can be achieved at the interface of perovskite/2,2',7,7'-tetrakis-(N,N-di-4-methoxyphenylamino)-9,90-spirobifluorene (Spiro-OMeTAD) with significantly boosted photostability. Using time-dependent spectroscopic techniques, we investigated charge carrier and mobile-ion dynamics at the perovskite/Spiro-OMeTAD interface, where the Spiro-OMeTAD contains different bis(trifluoromethanesulfonyl)imide (TFSI) salts additives (Li-TFSI, Mg-TFSI₂, Ca-TFSI₂). The pristine response and the dynamic changes under continuous illuminations are presented, which is correlated to the different behaviors of mobile-ion accumulations at the perovskite/Spiro interface and ascribed to the improved hole mobilities in Spiro-OMeTAD, ultimately contributing to the favorable behaviors in solar cells. It is demonstrated that the hole mobility and conductivity of hole transport layers play an important role in suppressing mobile-ion accumulation at the interfaces of solar cells. With the engineering of mixed-cation mixed-halide perovskite, optimal engineering of additives in hole transport materials is an efficient strategy. Therefore, it should be emphasized for accelerating perovskite photovoltaic commercialization.

Deactivation/Activation of Quenching Defects in CH3NH3PbI3 Perovskite by Direct Electron Injection/Extraction

Organometal halide perovskites (OMHPs) have emerged as advisible materials for application in optoelectronic devices over the past decade. However, a variety of complex slow responses in OMHPs under an external electric field have been observed, and the mechanisms for these responses remain a topic of intense debate. In this work, with an external voltage applied to the CH₃NH₃PbI₃ crystal, reversible photoluminescence (PL) enhancement and quenching behaviors respectively near the anode and the cathode were observed under wide-field fluorescence microscopy. Further experiments attribute the reversible PL enhancing responses to the electron injection effect increasing the radiative recombination, while PL quenching was attributed to be due to the electron extraction effect increasing the nonradiative recombination. The control of PL by external applied voltage indicates brilliant carrier mobility in the CH₃NH₃PbI₃ crystal and also reminds us to focus on the effect of hole/electron injection on the materials which may limit the performance of perovskite-based optoelectronic devices.