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Zheng Y, Lv H, Wang HQ, Geng C, Xu S. Water-Oil Interfacial Synthesis of Two-Dimensional Colloidal Lead-Iodide Perovskites with Enhanced Efficiency and Stability. J Phys Chem Lett 2024; 15:4040-4046. [PMID: 38578449 DOI: 10.1021/acs.jpclett.4c00339] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/06/2024]
Abstract
Two-dimensional Ruddlesden-Popper perovskites L2PbI4 (L = alkylammonium cation) (RPPs) have attracted significant attention due to their unique excitonic characteristics. However, their ultrafast reaction dynamics exacerbates the structural distortion of the inorganic framework, leading to severe deterioration in photoluminescence. Here, we propose a water-oil interfacial synthesis approach to achieve controlled growth of the RPPs nanosheets. By segregating Pb and I precursors in two immiscible solvents, the nucleation and growth of RPPs are prolonged to the minute level. L2PbI4 nanosheets terminated with various alkylammonium are synthesized, and the factors influencing the growth kinetics of RPPs nanosheets are investigated. The resulting (PEA)2PbI4 nanosheets exhibit a 3.6-time enhancement in quantum efficiency and 3.2-time improvement photostability compared to those synthesized using the classical recrystallization method. A white light-emitting diode based on (HDA)2PbI4 nanosheets is fabricated, achieving a color gamut of 119.7% of the NTSC display standards. This innovative approach offers a new method for the controlled growth of 2D RPPs with improved optical quality and stability.
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Affiliation(s)
- Yuan Zheng
- School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, P. R. China
| | - Hao Lv
- School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, P. R. China
| | - Hai-Qiao Wang
- School of Materials Science and Engineering, Ningbo Tech University, Ningbo 315100, P. R. China
| | - Chong Geng
- School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, P. R. China
| | - Shu Xu
- School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, P. R. China
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Kim D, Yun T, An S, Lee CL. How to improve the structural stabilities of halide perovskite quantum dots: review of various strategies to enhance the structural stabilities of halide perovskite quantum dots. NANO CONVERGENCE 2024; 11:4. [PMID: 38279984 PMCID: PMC10821855 DOI: 10.1186/s40580-024-00412-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2023] [Accepted: 01/08/2024] [Indexed: 01/29/2024]
Abstract
Halide perovskites have emerged as promising materials for various optoelectronic devices because of their excellent optical and electrical properties. In particular, halide perovskite quantum dots (PQDs) have garnered considerable attention as emissive materials for light-emitting diodes (LEDs) because of their higher color purities and photoluminescence quantum yields compared to conventional inorganic quantum dots (CdSe, ZnSe, ZnS, etc.). However, PQDs exhibit poor structural stabilities in response to external stimuli (moisture, heat, etc.) owing to their inherent ionic nature. This review presents recent research trends and insights into improving the structural stabilities of PQDs. In addition, the origins of the poor structural stabilities of PQDs and various methods to overcome this drawback are discussed. The structural degradation of PQDs is mainly caused by two mechanisms: (1) defect formation on the surface of the PQDs by ligand dissociation (i.e., detachment of weakly bound ligands from the surface of PQDs), and (2) vacancy formation by halide migration in the lattices of the PQDs due to the low migration energy of halide ions. The structural stabilities of PQDs can be improved through four methods: (1) ligand modification, (2) core-shell structure, (3) crosslinking, and (4) metal doping, all of which are presented in detail herein. This review provides a comprehensive understanding of the structural stabilities and opto-electrical properties of PQDs and is expected to contribute to future research on improving the device performance of perovskite quantum dot LEDs (PeLEDs).
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Affiliation(s)
- Dokyum Kim
- Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Taesun Yun
- Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
- Department of Physics, Research Institute of Physics and Chemistry, Jeonbuk National University, Jeonju, 54896, Republic of Korea
| | - Sangmin An
- Department of Physics, Research Institute of Physics and Chemistry, Jeonbuk National University, Jeonju, 54896, Republic of Korea
| | - Chang-Lyoul Lee
- Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea.
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Wei Y, Liu X, Miao Y, Liu Y, Wang C, Ying X, Zhang G, Gu H, Zhang M, Chen H. A high-responsivity CsPbBr 3 nanowire photodetector induced by CdS@Cd xZn 1-xS gradient-alloyed quantum dots. NANOSCALE HORIZONS 2022; 7:644-654. [PMID: 35583596 DOI: 10.1039/d2nh00149g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Benefitting from excellent thermal and moisture stability, inorganic halide perovskite materials have established themselves quickly as promising candidates for fabricating photoelectric devices. However, due to their high trap state density and rapid carrier recombination rate, the photoelectric conversion efficiencies of current inorganic halide perovskite materials are still lower than expected. Here, after systematic research on the optoelectronic properties of CsPbBr3 nanowires (NWs) decorated with binary CdS quantum dots (QDs), CdS@ZnS core/shell QDs, and gradient-alloyed CdS@CdxZn1-xS QDs, respectively, we proposed a facile method to improve the quantum efficiency of perovskite-based photodetectors with low cost, in which the aforementioned QDs are firstly integrated with CsPbBr3 NWs, which act as a photosensitive layer. Notably, the responsivity of the CsPbBr3 NW photodetector decorated with CdS@CdxZn1-xS QDs was enhanced about 10-fold compared to that of pristine CsPbBr3 NW devices. This value is far superior to those for hybrids composed of binary CdS QDs and CdS@ZnS core/shell QDs. The high responsivity enhancement phenomena are interpreted based on the unique funnel-shaped energy level of CdS@CdxZn1-xS QDs, which is favorable for light-harvesting and photocarrier separation. This work indicates that our unique QD/NW hybrid nanostructure is a desirable building block for fabricating high-performance photodetectors.
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Affiliation(s)
- Ying Wei
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
| | - Xiao Liu
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
| | - Yu Miao
- Laboratory of Quantum Engineering and Quantum Material, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, P. R. China
| | - Yuxin Liu
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
| | - Chuanglei Wang
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
| | - Xiangjing Ying
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
| | - Gaotian Zhang
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
| | - Huaimin Gu
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
| | - Menglong Zhang
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
| | - Hongyu Chen
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
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