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Xie J, Lin W, Zheng K, Liang Z. N-Doping Donor-Dilute Semitransparent Organic Solar Cells to Weaken Donor: Acceptor Miscibility and Consolidate Donor-Phase Continuity. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2404135. [PMID: 38884284 DOI: 10.1002/advs.202404135] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2024] [Revised: 05/09/2024] [Indexed: 06/18/2024]
Abstract
Lightweight and semi-transparent organic solar cells (ST-OSCs) offer bright promise for applications such as building integrated photovoltaics. Diluting donor content in bulk-heterojunction active layers to allow greater visible light transmittance (AVT) effectively enhances device transparency, yet the ineluctable compromise of the donor-phase continuity is challenging for efficient charge transport. Herein, a trace amount of n-type N-DMBI dopant is incorporated, which facilitates the donor:acceptor (D:A) de-mixing by strengthening both acceptor polarity and D/A crystallization. With the diminution of component inter-mixing, the limited number of donors increasingly self-aggregate to establish the more continuous phases. For the benchmark PM6:Y6-based ST-OSCs, when the donor content is reduced from regular 45 to optimal 30 wt.%, the device AVT is remarkably raised by more than a quarter, accompanied by a marginal drop in power conversion efficiency from 13.89% to 13.03%. This study reveals that by decreasing the donor content to <30 wt%, acceptor excitons induced by Förster resonance energy transfer are prone to severe radiative recombination. This is nonetheless mitigated by dopant inclusion within the acceptor phase by providing extra energy offset and prolonging charge transfer state lifetime to assist exciton dissociation.
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Affiliation(s)
- Jiaqi Xie
- Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Weihua Lin
- Department of Chemical Physics and NanoLund, Lund University, Box 124, Lund, 22100, Sweden
| | - Kaibo Zheng
- Department of Chemical Physics and NanoLund, Lund University, Box 124, Lund, 22100, Sweden
- Department of Chemistry, Technical University of Denmark, Kongens Lyngby, DK-2800, Denmark
| | - Ziqi Liang
- Department of Materials Science, Fudan University, Shanghai, 200433, China
- Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
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Cui Y, Zhao C, Souza JPA, Benatto L, Koehler M, Ma W, Yan H. Eliminating the Imbalanced Mobility Bottlenecks via Reshaping Internal Potential Distribution in Organic Photovoltaics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2302880. [PMID: 37635171 PMCID: PMC10582413 DOI: 10.1002/advs.202302880] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/13/2023] [Revised: 07/11/2023] [Indexed: 08/29/2023]
Abstract
The imbalanced carrier mobility remains a bottleneck for performance breakthrough in even those organic solar cells (OSCs) with recorded power conversion efficiencies (PCEs). Herein, a counter electrode doping strategy is proposed to reshape the internal potential distribution, which targets to extract the low mobility carriers at far end. Device simulations reveal that the key of this strategy is to partially dope the active layer with a certain depth, therefore it strengthens the electric field for low mobility carriers near counter electrode region while avoids zeroing the electric field near collection electrode region. Taking advantage of these, PCE enhancements are obtained from 15.4% to 16.2% and from 16.9% to 18.0%, respectively, via cathode p-doping and anode n-doping. Extending its application from opaque to semitransparent devices, the PCE of dilute cell rises from 10.5% to 12.1%, with a high light utilization efficiency (LUE) of 3.5%. The findings provide practical solutions to the core device physical problem in OSCs.
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Affiliation(s)
- Yu Cui
- State Key Laboratory for Mechanical Behavior of MaterialsSchool of Materials Science and EngineeringXi'an Jiaotong UniversityXi'an710049P. R. China
| | - Chao Zhao
- State Key Laboratory for Mechanical Behavior of MaterialsSchool of Materials Science and EngineeringXi'an Jiaotong UniversityXi'an710049P. R. China
| | | | - Leandro Benatto
- Department of PhysicsFederal University of ParanáCuritiba81531‐980Brazil
| | - Marlus Koehler
- Department of PhysicsFederal University of ParanáCuritiba81531‐980Brazil
| | - Wei Ma
- State Key Laboratory for Mechanical Behavior of MaterialsSchool of Materials Science and EngineeringXi'an Jiaotong UniversityXi'an710049P. R. China
| | - Han Yan
- State Key Laboratory for Mechanical Behavior of MaterialsSchool of Materials Science and EngineeringXi'an Jiaotong UniversityXi'an710049P. R. China
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Wei H, Cheng Z, Wu T, Liu Y, Guo J, Chen PA, Xia J, Xie H, Qiu X, Liu T, Zhang B, Hui J, Zeng Z, Bai Y, Hu Y. Novel Organic Superbase Dopants for Ultraefficient N-Doping of Organic Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300084. [PMID: 36929089 DOI: 10.1002/adma.202300084] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Revised: 03/13/2023] [Indexed: 06/02/2023]
Abstract
Doping is a powerful technique for engineering the electrical properties of organic semiconductors (OSCs), yet efficient n-doping of OSCs remains a central challenge. Herein, the discovery of two organic superbase dopants, namely P2-t-Bu and P4-t-Bu as ultra-efficient n-dopants for OSCs is reported. Typical n-type semiconductors such as N2200 and PC61 BM are shown to experience a significant increase of conductivity upon doping by the two dopants. In particular, the optimized electrical conductivity of P2-t-Bu-doped PC61 BM reaches a record-high value of 2.64 S cm-1 . The polaron generation efficiency of P2-t-Bu-doped in PC61 BM is found to be over 35%, which is 2-3 times higher than that of benchmark n-dopant N-DMBI. In addition, a deprotonation-initiated, nucleophilic-attack-based n-doping mechanism is proposed for the organic superbases, which involves the deprotonation of OSC molecules, the nucleophilic attack of the resulting carbanions on the OSC's π-bonds, and the subsequent n-doping through single electron transfer process between the anionized and neutral OSCs. This work highlights organic superbases as promising n-dopants for OSCs and opens up opportunities to explore and develop highly efficient n-dopants.
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Affiliation(s)
- Huan Wei
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Zehong Cheng
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Tong Wu
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Yu Liu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Jing Guo
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Ping-An Chen
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Jiangnan Xia
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Haihong Xie
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Xincan Qiu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Tingting Liu
- College of Energy, Soochow University, 688 Moye Road, Suzhou, Jiangsu, 215123, China
| | - Bohan Zhang
- Key Laboratory of Natural Medicine and Immune Engineering, Henan University, 85 Minglun Street, Kaifeng, Henan, 475004, China
| | - Jingshu Hui
- College of Energy, Soochow University, 688 Moye Road, Suzhou, Jiangsu, 215123, China
| | - Zebing Zeng
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Yugang Bai
- State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Yuanyuan Hu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
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