Improving the Performance and High-Field Stability of FAPbBr3 Single Crystals in X-Ray Detection with Chenodeoxycholic Acid Additive

PEAI Surface Treatment for Low Ion Migration and High-Performance FAPbBr3 Single-Crystal X-ray Detectors

Organometal halide perovskite single crystals (SCs) are the most promising candidates for the next generation of radiation detection materials. However, surface defects severely affect their detection performance and limit further applications. Here, we identified the surface defect types of FAPbBr3 SCs and employed phenethylammonium iodide (PEAI) solution to treat the crystal surface and to investigate their effects on ion migration, photoelectric performance, and X-ray detection performance. Our experimental results demonstrated that the surface defects, such as the metallic Pb and Br vacancies, can be effectively passivated by both the PEAI and the two-dimensional (2D) PEA2PbI4 layers. The PEAI layer can elongate the carrier lifetime, lower the trap density, and suppress ion migration in FAPbBr3 SCs. The 2D PEA2PbI4 layer can form a dense and full surface coverage, suppress ion migration, and lower the dark current of the SCs. The X-ray sensitivity of the PEAI-passivated FAPbBr3 SC detectors is 227.93 μCGyair-1 cm-2, which is an order of magnitude higher than that of the pristine FAPbBr3 SC detectors. This work demonstrates that surface treatment plays a critical role in the crystal quality and the X-ray detection performance of SCs.

Crystal Growth, Structural and Electronic Characterizations of Zero-Dimensional Metal Halide (TEP)InBr4 Single Crystals for X-Ray Detection

Recently, metal halides have shown great potential for applications such as solar energy harvesting, light emission, and ionizing radiation detection. In this work, we report the preparation, structural, thermal, and electronic properties of a new zero-dimensional (0D) halide (TEP)InBr4 (where TEP is tetraethylphosphonium organic cation, C8H20P+). (TEP)InBr4 single crystals are obtained within a few days of continuous crystal growth time via a solution growth methodology. (TEP)InBr4 shows a relatively large optical bandgap energy of 4.32 eV and a low thermal conductivity between 0.33±0.05 and 0.45±0.07 W/m-K. Based on the density functional theory (DFT) calculations, the highest occupied molecular orbitals (HOMOs) of (TEP)InBr4 are dominated by the Br states, while the lowest unoccupied molecular orbitals (LUMOs) are constituted by both In and Br states. (TEP)InBr4 single crystals exhibit a semiconductor resistivity of 1.73×1013 Ω·cm and a mobility-lifetime (mu-tau) product of 2.07×10-5 cm2/V. Finally, a prototype (TEP)InBr4 single crystal-based X-ray detector with a detection sensitivity of 569.85 uCGy-1cm-2 (at electrical field E=100 V/mm) was fabricated, indicating the potential use of (TEP)InBr4 for radiation detection applications.

Regulating 3D Phase in Quasi-2D Perovskite Films for High-Performance and Stable Photodetectors

The charge transport in quasi-2D perovskites limits their applications despite the superior stability and optoelectronic properties. Herein, a novel strategy is proposed to enhance the charge transport by regulating 3D perovskite phase in quasi-2D perovskite films. The carbohydrazide (CBH) as an additive is introduced into (PEA)2 MA3 Pb4 I13 precursors, which slows down the crystallization process and improves the phase ratio and crystal quality of the 3D phase. This structure change results in a significant improvement in charge transport and extraction, leading to the device demonstrating an almost 100% internal quantum efficiency, a peak responsivity of 0.41 A W-1 , and a detectivity of 1.31 × 1012 Jones at 570 nm under 0 V bias. Furthermore, the air and moisture stability of (PEA)2 MA3 Pb4 I13 films is not deteriorated but gets significantly improved due to the better crystal quality and the passivation of defects by the residual CBH molecule. This work demonstrates a strategy for improving the charge transport properties of quasi-2D perovskites and also sheds light on solving the stability issue of 3D perovskite films via the proper passivation or additives, which will inspire the fast development of the perovskite community.

X-Site Substituted 2D Cs2 Pb(SCN)2 Br2 Perovskites for X-Ray Detection

2D Ruddlesden-Popper (RP) perovskites have been intensively investigated due to their superior stability and outstanding optoelectrical properties. However, investigations on 2D RP perovskites are mainly focused on A-site substituted perovskites and few reports are on X-site substituted perovskites especially in X-ray detection field. Here, X-site substituted 2D RP perovskite Cs2 Pb(SCN)2 Br2 polycrystalline wafers are prepared and systematically studied for X-ray detection. The obtained wafers show a large resistivity of 2.0 × 1010 Ω cm, a high ion activation energy of 0.75 eV, a small current drift of 2.39 × 10-6 nA cm-1 s-1 V-1 , and charge carrier mobility-lifetime product under X-ray as high as 1.29 × 10-4 cm2 V-1 . These merits enable Cs2 Pb(SCN)2 Br2 wafer detectors with a sensitivity of 216.3 µC Gyair -1 cm-2 , a limit of detection of 42.4 nGyair s-1 , and good imaging ability with high spatial resolution of 1.08 lp mm-1 . In addition, Cs2 Pb(SCN)2 Br2 wafer detectors demonstrate excellent operational stability under high working field up to 2100 V cm-1 after continuous X-ray irradiation with a total dose of 45.2 Gyair . The promising features such as short octahedral spacing and weak ion migration will open up a new perspective and opportunity for SCN-based 2D perovskites in X-ray detection.