Graphane

Analysis of Carbon Materials with Infrared Photoacoustic Spectroscopy

Measurement of infrared spectroscopy has emerged as a significant challenge for carbon materials due to the sampling problem. To overcome this issue, in this work, we performed measurements of IR spectra for carbon materials including C60, C70, diamond powders, graphene, and carbon nanotubes (CNTs) using the photoacoustic spectroscopy (PAS) technique; for comparison, the vibrational patterns of these materials were also studied with a conventional transmission method, diffuse reflectance infrared Fourier transform (DRIFT) spectroscopy, or Raman spectroscopy. We found that the IR photoacoustic spectroscopy (IR-PAS) scheme worked successfully for these carbon materials, offering advantages in sampling. Interestingly, the profiles of IR-PAS spectra for graphene and CNTs exhibit negative bands using carbon black as the reference; the negative spectral information may provide valuable knowledge about the storage energy, production, structure, defect, or impurity of graphene and CNTs. Thus, this approach may open a new avenue for analyzing carbon materials.

Band Gap Engineering in Two-Dimensional Materials by Functionalization: Methylation of Graphene and Graphene Bilayers

Graphene is well-known for its unique combination of electrical and mechanical properties. However, its vanishing band gap limits the use of graphene in microelectronics. Covalent functionalization of graphene has been a common approach to address this critical issue and introduce a band gap. In this Article, we systematically analyze the functionalization of single-layer graphene (SLG) and bilayer graphene (BLG) with methyl (CH₃) using periodic density functional theory (DFT) at the PBE+D3 level of theory. We also include a comparison of methylated single-layer and bilayer graphene, as well as a discussion of different methylation options (radicalic, cationic, and anionic). For SLG, methyl coverages ranging from 1/8 to 1/1, (i.e., the fully methylated analogue of graphane) are considered. We find that up to a coverage θ of 1/2, graphene readily accepts CH₃, with neighbor CH₃ groups preferring trans positions. Above θ = 1/2, the tendency to accept further CH₃ weakens and the lattice constant increases. The band gap behaves less regularly, but overall it increases with increasing methyl coverage. Thus, methylated graphene shows potential for developing band gap-tuned microelectronics devices and may offer further functionalization options. To guide in the interpretation of methylation experiments, vibrational signatures of various species are characterized by normal-mode analysis (NMA), their vibrational density of states (VDOS), and infrared (IR) spectra, the latter two are obtained from ab initio molecular dynamics (AIMD) in combination with a velocity-velocity autocorrelation function (VVAF) approach.

First-Principles Study of the Optical Dipole Trap for Two-Dimensional Excitons in Graphane

Recent studies on excitons in two-dimensional materials have been widely conducted for their potential usages for novel electronic and optical devices. Especially, sophisticated manipulation techniques of quantum degrees of freedom of excitons are in demand. In this Letter we propose a technique of forming an optical dipole trap for excitons in graphane, a two-dimensional wide gap semiconductor, based on first-principles calculations. We develop a first-principles method to evaluate the transition dipole matrix between excitonic states and combine it with the density functional theory and GW+BSE calculations. We reveal that in graphane the huge exciton binding energy and the large dipole moments of Wannier-like excitons enable us to induce the dipole trap of the order of meV depth and μm width. This Letter opens a new way to control light-exciton interacting systems based on newly developed numerically robust ab initio calculations.

Heat transfer through hydrogenated graphene superlattice nanoribbons: a computational study

Optimization of thermal conductivity of nanomaterials enables the fabrication of tailor-made nanodevices for thermoelectric applications. Superlattice nanostructures are correspondingly introduced to minimize the thermal conductivity of nanomaterials. Herein we computationally estimate the effect of total length and superlattice period ([Formula: see text]) on the thermal conductivity of graphene/graphane superlattice nanoribbons using molecular dynamics simulation. The intrinsic thermal conductivity ([Formula: see text]) is demonstrated to be dependent on [Formula: see text]. The [Formula: see text] of the superlattice, nanoribbons decreased by approximately 96% and 88% compared to that of pristine graphene and graphane, respectively. By modifying the overall length of the developed structure, we identified the ballistic-diffusive transition regime at 120 nm. Further study of the superlattice periods yielded a minimal thermal conductivity value of 144 W m^-1 k^-1 at [Formula: see text] = 3.4 nm. This superlattice characteristic is connected to the phonon coherent length, specifically, the length of the turning point at which the wave-like behavior of phonons starts to dominate the particle-like behavior. Our results highlight a roadmap for thermal conductivity value control via appropriate adjustments of the superlattice period.

Two-dimensional hydrogenated buckled gallium arsenide: an ab initio study

First-principles calculations have been carried out to investigate the stability, structural and electronic properties of two-dimensional (2D) hydrogenated GaAs with three possible geometries: chair, zigzag-line and boat configurations. The effect of van der Waals interactions on 2D H-GaAs systems has also been studied. These configurations were found to be energetic and dynamic stable, as well as having a semiconducting character. Although 2D GaAs adsorbed with H tends to form a zigzag-line configuration, the energy differences between chair, zigzag-line and boat are very small which implies the metastability of the system. Chair and boat configurations display a [Formula: see text]-[Formula: see text] direct bandgap nature, while pristine 2D-GaAs and zigzag-line are indirect semiconductors. The bandgap sizes of all configurations are also hydrogen dependent, and wider than that of pristine 2D-GaAs with both PBE and HSE functionals. Even though DFT-vdW interactions increase the adsorption energies and reduce the equilibrium distances of H-GaAs systems, it presents, qualitatively, the same physical results on the stability and electronic properties of our studied systems with PBE functional. According to our results, 2D buckled gallium arsenide is a good candidate to be synthesized by hydrogen surface passivation as its group III-V partners 2D buckled gallium nitride and boron nitride. The hydrogenation of 2D-GaAs tunes the bandgap of pristine 2D-GaAs, which makes it a potential candidate for optoelectronic applications in the blue and violet ranges of the visible electromagnetic spectrum.

Towards a simplified description of thermoelectric materials: accuracy of approximate density functional theory for phonon dispersions

We calculate the phonon-dispersion relations of several two-dimensional materials and diamond using the density-functional based tight-binding approach (DFTB). Our goal is to verify if this numerically efficient method provides sufficiently accurate phonon frequencies and group velocities to compute reliable thermoelectric properties. To this end, the results are compared to available DFT results and experimental data. To quantify the accuracy for a given band, a descriptor is introduced that summarizes contributions to the lattice conductivity that are available already in the harmonic approximation. We find that the DFTB predictions depend strongly on the employed repulsive pair-potentials, which are an important prerequisite of this method. For carbon-based materials, accurate pair-potentials are identified and lead to errors of the descriptor that are of the same order as differences between different local and semi-local DFT approaches.

Transition metal substitution for H in graphane: a high-throughput study

This systematic study of transition metal (TM) substitution for H on graphane TM _x H_1-x C, (TM  =  Sc, Ti, V, Cr, Mn) combines ab initio calculations and cluster expansion to explore a huge variety of structures in more than 20 supercells over the full concentration range from x  =  0 to 1. We find energetically favorable structures at each concentration in supercells not studied before. At low x the lowest-energy structures contain lines and bands of TM atoms. For the larger atoms (Sc, Ti, V) the ordering becomes complex at higher concentrations, and their increased interaction in graphene causes H atoms to detach from the graphene to positions above the TMs. The smaller atoms (Cr, Mn) have much simpler ordering that favors TM atoms all on one side before filling the other side. At full coverage (x  =  1), the TM atoms remain well bound to the graphene, the structure being more stable than a free monolayer by 0.5 to 0.8 eV. The binding energies of TM atoms are strongly enhanced by the binding of H to graphene, with strengths similar to the bulk cohesive energy of Ti.

Li states on a C–H vacancy in graphane: a first-principles study

The Li ion enhances the V_CH induced magnetism. The −1 charge doping shifts the Fermi level to the CBM further increasing magnetism. The +1 charge doping shifts the Fermi level to the VBM reducing magnetism.